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IRLI520NPBF Infineon Technologies AG Power Field-Effect Transistor, 8.1A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN visit Digikey Buy

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Part : IRLI520NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 800 Best Price : $0.2989 Price Each : $0.3399
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IRLI520N Datasheet

Part Manufacturer Description PDF Type
IRLI520N International Rectifier HEXFET Power MOSFET Original
IRLI520N International Rectifier HEXFET Power Mosfet Original
IRLI520N International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLI520N with Standard Packaging Original
IRLI520N Toshiba Power MOSFETs Cross Reference Guide Original
IRLI520NPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8.1A TO220FP Original
IRLI520NPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original
IRLI520NPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRLI520N with Lead Free Packaging Original

IRLI520N

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD - 9.1496A International I©R Rectifier IRLI520N PRELIMINARY HEXFET® Power MOSFET , Junction-to-Case â'" 5.0 RejA Junction-to-Am bient â'" 65 Units °c/w 3/16/98 IRLI520N , OSFET symbol © Uses IRL520N data and test conditions IRLI520N In te rn a tio n a l IÃR R , . Temperature 1 80 IRLI520N C, Capaci t ance (pF) In te rn a tio n a l IQR R ectifier V DS , - S o u r c e V o l t a g e (V) Fig 8. Maximum Safe Operating Area 100 0 IRLI520N In te -
OCR Scan
TP-220 IRFI840G

IRL520N

Abstract: IRLI520N PD - 9.1496 IRLI520N PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive Advanced , ­­­ ­­­ 5.5 65 °C/W 11/11/96 IRLI520N Electrical Characteristics @ TJ = 25°C (unless , conditions D S IRLI520N 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V , , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature IRLI520N V GS C is s , . Maximum Safe Operating Area 1000 IRLI520N 8 RD VDS ID , D ra in C u rre n t (A m p s
International Rectifier
Original
mosfet 60v 60a I840G

IR 60A, 100V Mosfet

Abstract: IRL520N PD - 9.1496A IRLI520N PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive Advanced , ­­­ ­­­ 5.0 65 °C/W 3/16/98 IRLI520N Electrical Characteristics @ TJ = 25°C (unless , IRLI520N 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V , . Temperature IRLI520N V GS C iss C rss C oss = = = = 15 0V , f = 1M H z C gs + C gd , C , (V ) Fig 8. Maximum Safe Operating Area 1000 IRLI520N 10.0 RD VDS VGS I D
International Rectifier
Original
IR 60A, 100V Mosfet

IRL520N

Abstract: IRLI520N PD - 9.1496A IRLI520N PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive Advanced , ­­­ ­­­ 5.0 65 °C/W 3/16/98 IRLI520N Electrical Characteristics @ TJ = 25°C (unless , IRLI520N 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V , . Temperature IRLI520N V GS C iss C rss C oss = = = = 15 0V , f = 1M H z C gs + C gd , C , (V ) Fig 8. Maximum Safe Operating Area 1000 IRLI520N 10.0 RD VDS VGS I D
International Rectifier
Original
30V 60A power p MOSFET

diode a37

Abstract: irf 540 mosfet Previous Datasheet Index Next Data Sheet PD - 9.1496 IRLI520N PRELIMINARY HEXFET , Index Next Data Sheet IRLI520N Electrical Characteristics @ TJ = 25°C (unless otherwise specified , conditions To Order D S Previous Datasheet Index Next Data Sheet IRLI520N 100 100 , IRLI520N V GS C is s C rs s C o ss 15 = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd , Next Data Sheet IRLI520N 8 RD VDS ID , D ra in C u rre n t (A m p s ) VGS 6 D.U.T
International Rectifier
Original
diode a37 irf 540 mosfet IRF 260 N

ir9245

Abstract: m e te r Min . Typ. M a x. U nit s C o n d it io n s IRLI520N V(BR)DSS AV(BR)D33*Tj RDS(on , tifie r IRLI520N 12V 10V 8 .0V 0 1 1 10 100 VDS , D ra in -to -S o u rce V o lta g , . N orm alized O n-R esistance Vs. Tem perature IRLI520N International IG R Rectifier C , IRLI520N T q , C a se T e m p e ra tu re ( °C) Fig 9. M axim um Drain C urrent Vs. Case Tem , ) Fig 11. M axim um Effective T ransient Therm al Im pedance, Junction-to-C ase IRLI520N
-
OCR Scan
ir9245 TQ-220

IRL520N

Abstract: IRLI520N PD - 9.1496A IRLI520N PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS(on) = 0.18 G ID =8.1A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing , ­­­ ­­­ 5.0 65 °C/W 3/16/98 IRLI520N Electrical Characteristics @ TJ = 25°C (unless
International Rectifier
Original
100V 60A Mosfet

IRL1540N

Abstract: IRL1540 International IöR Rectifier HEXFET® Power MOSFETs d d V(BR)DSS Continuous R0 Drain-to-Source RDS(on) Continuous Drain Current On-State Drain Current Max. mainai Max. Power Breakdown 100° Part Resistance Resistance Dissipation Voltage 25°C (°C/W) Number (A) (V) (A) w 5© NJTÏNA" O-' -* *r '~
-
OCR Scan
IRL1Z24N IRL1540N RF19630G IRL1540 IRL15 irliz34 RLI2203N IRLI3803 IRLIZ34N IRLI3705N IRLI2505

IRF4905 equivalent

Abstract: 800v irf IRLI520N 91496 IRFI530N 91353 IRL530N 91348 IRF540N 91341 IRL540N 91495 IRF1310N 91504
International Rectifier
Original
IRFZ48N IRF3205 IRFP064N IRFP448 IRFPS473LC IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 IRL2703

IRFZ44G

Abstract: IRF840G IRLI520N IRLI530G IRFI530N IRLI620G IRFI620G IRFI634G IRLI640G IRFI644G IRFI730G IRFI740G IRFIBC30G 9550 , 2.46E+05 3722 2.47E+05 3707 2.46E+05 3722 2.71E+06 338 IRLI520N IRLI530G IRFI510G IRLI620G IRFI620G , 0 0 0 0 MODE (note b) IRLI520N IRLI530G IRFI620G IRFI634G IRFI644G IRLI640G IRFIBC30G 9721 , IRFIZ44N IRFIZ48G IRFI510G IRLI520N IRLI530G IRFI530N IRLI620G IRFI620G IRFI634G IRFI644G IRLI640G IRFI730G , N and P Channel FAILURES DEVICE TYPE IRLIZ24G IRLIZ34G IRLIZ44G IRLIZ44N IRFIZ48G IRLI520N IRLI530G
International Rectifier
Original
IRFZ44G IRF840G IRFZ34G IRFBC30G IRF640G IRF9540G IRFI740GLC IRFI840GLC IRFIBC40GLC IRLIZ14G IRLI510G IRLI520G

irf510 switch

Abstract: IRFBA40N60C IRFI520N 91362 IRLI520N 91496 IRFI530N 91353 IRLI530N 91350 IRFI540N 91361 IRLI540N 91497 IRFI1310N 91611
International Rectifier
Original
IRFBA40N60C irf510 switch IRL2505 IRF540NL IRF634L IRFU9024N 220TM 247TM IRLU2703 IRFU3303 IRLU3303 IRFU3103

irf 064

Abstract: irf 480 -30CLTR 0.69 IRF 814 IRFPC60 11.44 IRF 815 IRG4PC40F 4.35 IRF — IRLI520N 1.13 IRF — IRU1205-33CLTR 0.69 IRF 814
-
Original
irf 064 irf 480 irf 814 IRF 544 irf 2248 IRF 534 IRFP044N IRFZ14S IRL2910S IRU1015-33CT IRFP048N IRFZ24N

IRFP460Z

Abstract: IRF3205 application IRLI520N IRLI3615 Total 215 144 175 175 80 1000 40 80 120 1000 1000 0 0 0 , 59.9 31.7 31.7 12.5 TO-220 Fullpack: Standard Gate IRLI520N IRLI520N IRLI3615 Total 203
International Rectifier
Original
IRFP460Z IRF3205 application IRF3205 equivalent irfp4004 power MOSFET IRFP460z IRF3808 equivalent HFA16TB120 C/15PSIG 20ETS12S 15ETS16 20ETS16 10TTS08

IRFIBC44LC

Abstract: MOSFET IRF 3710 Type Date Code (°C) IRLI520N 9920 175 IRFIB7N50A 9847 150 IRFIB7N50A 9911 150 IRFIBC44GLC , IRFIBF30G IRFIZ24G IRLI520N Date Code 9818 9920 9921 9802 9920 Temp (°C) 150 150 150 175 , Code IRLI520N 9920 IRLI3705N 9920 IRFIB7N50A 9847 IRFIB7N50A 9911 IRFIBC44GLC 9818 , : Vg = 0V; Vd = as specified Device Type Date Code IRLI3705N 9920 IRFIZ24G 9802 IRLI520N 9920 , AUTOCLAVE T= 121°C, P = 2 atmospheres, RH = 100%; Bias: none applied Device Type Date Code IRLI520N
International Rectifier
Original
IRFIBC44LC MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615

IRF1010E

Abstract: irf 4110 IRLI3803 IRLIZ24N IRLIZ34N IRLIZ44N IRLI3705N IRLI2505 IRLI520N IRLI530N IRLI540N IRLI2910 TO
International Rectifier
Original
IRF1010E irf 4110 irfbf30 irf7333 IRFPF50 Irf520N IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLMS1902 IRF5305L

9137

Abstract: surface mount IRFZ44N IRLI3803 30 0.006 67 47 3.1 48 91320 IRLI520N 100 0.18 7.7 5.4 5.5
International Rectifier
Original
IRFK3D450 9137 surface mount IRFZ44N IRFBg30 equivalent IRFK4H054 hexfet power mosfets international rectifier IRLMS1503 IRLMS5703 IRLMS6702 IRFK2DC50 IRFK2DE50 IRFK2F054

IRGKI165F06

Abstract: IRGDDN600M06 IRLI3803 30 0.006 67 47 3.1 48 91320 IRLI520N 100 0.18 7.7 5.4 5.5
International Rectifier
Original
IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRGNIN075 IRF7311 IRFK6H054 IRKHF180-12H IRKHF180-04H IRKHF180-08H IRKHF200-12H IRKHF200-04H IRKHF200-08H

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE -220 IRLI3803 V FP TO-220 u IRLI520G III FP TO-220 IRLI520N V FP TO-220 u IRLI530G III FP TO
International Rectifier
Original
irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 GA600GD25S FA38SA50LC FA57SA IRG4CC20UB

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRLI3803 IRLI520G IRLI520N IRLI530G IRLI530N IRLI540G IRLI540N IRLI620G IRLI630G IRLI640G IRLIZ14G IRLIZ24G
International Rectifier
Original
IRF734 IRGTI165F06 irg4pc50fd IRGTI200F06 IRGKI115U06 FA57SA50LC FB180SA10 IRC530 IRC540 IRC630 IRC634

YTA630

Abstract: MTW14P20 IRF3710S 91310 IRL2910S 91376 IRFI9Z14G* 90840 IRFI510G 90829 IRFI520N 91362 IRLI520N 91496 IRFI530N 91353
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401
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