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IRFZ40PBF Vishay Siliconix Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB visit Digikey Buy

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Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 929 Best Price : $0.8439 Price Each : $1.7304
Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.5869 Price Each : €1.1922
Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 423 Best Price : $0.8940 Price Each : $1.27
Part : IRFZ40 Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 169 Best Price : $0.4922 Price Each : $1.3125
Part : IRFZ40 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 14,070 Best Price : $0.3412 Price Each : $1.3125
Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 215 Best Price : £0.7760 Price Each : £1.3440
Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 190 Best Price : £0.7760 Price Each : £0.8720
Part : IRFZ40 Supplier : International Rectifier Manufacturer : basicEparts Stock : 142 Best Price : - Price Each : -
Part : IRFZ40PBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.8670 Price Each : £1.31
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IRFZ40 Datasheet

Part Manufacturer Description PDF Type
IRFZ40 Cypress Semiconductor 256K x 32 Static RAM Module Original
IRFZ40 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
IRFZ40 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
IRFZ40 Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ40 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO220AB Original
IRFZ40 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRFZ40 Motorola Switchmode Datasheet Scan
IRFZ40 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFZ40 N/A Shortform Datasheet & Cross References Data Scan
IRFZ40 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRFZ40 N/A FET Data Book Scan
IRFZ40 STMicroelectronics Shortform Data Book 1988 Scan
IRFZ40FI STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original
IRFZ40FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
IRFZ40FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original
IRFZ40FI Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ40FI N/A Shortform Datasheet & Cross References Data Scan
IRFZ40PBF Vishay Semiconductors MOSFET N-CH 50V 35A TO-220AB Original
IRFZ40PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO220AB Original

IRFZ40

Catalog Datasheet MFG & Type PDF Document Tags

IRFZ40

Abstract: irfz42 temperature June 1988 1/5 367 IRFZ40- IRFZ42 THERMAL DATA Thermal resistance junction-case Thermal , IRFZ40- IRFZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ. Max. Unit , SCS-THOMSON [ * ® ( Q m i ( M ( 0M (g s IRFZ40 IRFZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS , RATINGS V DS * V DGR V GS 'd Id Id m O ·d l m * IRFZ40 50 50 ±20 35 32 160 160 125 1.2 - 5 5 to 150 , ) V DS > *D (o n ) x R D S (o n ) m a x VGS = 10 V ^ D S (o n ) VGS= 1 0 V for IRFZ40 for
-
OCR Scan
IRFZ42N IRF240 IRF242

C5027

Abstract: C3519 IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s , MAXIMUM RATINGS Symbol Parameter Value Unit IRFZ40 V DS V DGR V GS IRFZ40FI , operating area July 1993 1/9 IRFZ40/FI THERMAL DATA TO-220 R thj-case R thj-amb R thc-s Tl , . 17 22 1700 630 200 Max. Unit S 2200 850 260 pF pF pF IRFZ40/FI ELECTRICAL , operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/9 IRFZ40/FI
STMicroelectronics
Original
C5027 C3519 IRFZ40/FI P011G

8 pin ic 9435A

Abstract: 9435a R I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 , RECTIFIER IRFZ40, IRFZ42 Series " " Ï Ï T T " ! 4Û55455 Qfibc ì3 S | ~ INTERNATIONAL R E C TIFIE R , Temperature IRFZ40 50 50 35 32 160 ±2 0 125 (See Rg. 14) 1.0 (See Rg. 14) (See Fig. 15 and 16) L = lOOjiH 160 , Orain Current ® Type IRFZ40 IRFZ42 ALL ALL ALL ALL IRFZ40 IRFZ42 IRFZ40 IRFZ42 ALL ALL ALL ALL ALL , ` i4 ? IRFZ40, IRFZ42 Series INTERN A TI ON AL R E C T I F I E R Source-Drain Diode Ratings and
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OCR Scan
8 pin ic 9435A 9435a 9435A transistor c442 diode c446 transistor RFZ4 T-39-13 T0-220AB C-445 C-446

C3519

Abstract: IRFZ40 IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s , MAXIMUM RATINGS Symbol Parameter Value Unit IRFZ40 VD S V DG R V GS IRFZ40FI , operating area July 1993 1/9 IRFZ40/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl , . 17 22 1700 630 200 Max. Unit S 2200 850 260 pF pF pF IRFZ40/FI ELECTRICAL , Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/9 IRFZ40/FI Thermal Impedance
STMicroelectronics
Original

1rfz42

Abstract: ^ O IRFZ40 1RFZ42 N 7 Ib a 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VD ss ^D (on) S IRFZ40 50 V 0.028 à 35 A IRFZ42 50 V 0.035 fi , factor Storage temperature Max. operating junction temperature IRFZ42 IRFZ40 50 50 ±20 35 , ON b V DS > Id = 2 5 0 //A (on) x R DS(on) VGS= 10 V for IRFZ40 for IRFZ42 max VGS , ELECTRICAL CHARACTERISTICS (Continued) Parameters IRFZ40 - IRFZ42 G S-TH0MS0N Test C onditions
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OCR Scan

IRFZ40PBF

Abstract: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE , SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay
Vishay Siliconix
Original
HFZ40 2002/95/EC IRFZ40P HFZ40-E3 2011/65/EU

IRFZ40

Abstract: IRFZ40FI IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID IRFZ40 50 V < 0.028 50 A , Codes Part Number Marking Package Packaging IRFZ40 IRFZ40 TO-220 TUBE IRFZ40FI IRFZ40FI ISOWATT220 TUBE REV. 2 April 2004 1/11 IRFZ40/FI Table 3. Absolute Maximum Ratings Value Symbol Parameter Unit IRFZ40 VDS VDGR VGS IRFZ40FI Drain-source Voltage
STMicroelectronics
Original

IRFZ42

Abstract: Z 4 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ42 V DSS ^DS(on , ers and uninterruptible power supplies ABSOLUTE MAXIMUM RATINGS V ds IRFZ40 50 50 ±20 35 32 , °C (*) Repetitive Rating: Pulse width limited by max junction temperature June 1988 1/5 367 IRFZ40 - IRFZ42 , ) VQS= 10 V for IRFZ40 for IRFZ42 lD= 29 A 0.028 0.035 n « DYNAMIC 9fS * Qss c ^ rs s Forward , IRFZ40 - IRFZ42 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ. Max. Unit
-
OCR Scan

schematic diagram motor control

Abstract: C5027 IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID IRFZ40 50 V < 0.028 50 A IRFZ40FI 50 V < 0.028 27 A FEATURES SUMMARY TYPICAL RDS(on) = 0.022 AVALANCHE RUGGED , IRFZ40FI IRFZ40FI ISOWATT220 TUBE REV. 2 April 2004 1/11 IRFZ40/FI Table 3. Absolute Maximum Ratings Value Symbol Parameter Unit IRFZ40 VDS VDGR VGS IRFZ40FI Drain-source
STMicroelectronics
Original
schematic diagram motor control 5027A schematic diagram motor
Abstract: 7^2^537 Q045752 4^0 â  S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S (o ii) Id 50 V 50 V , AXIM UM RATINGS Sym bol Param eter Value Unit IRFZ40 V ds V dgr Vgs IRFZ40FI , Lily 1993 1/6 249 I IRFZ40/FI 7751537 0045753 357 â  S 6 T H THERM AL DATA ISOW , MæMIlÃ'BÃ'lOÃ"i Unit pF pF pF T'ÌE'IEB? 0Q4S7S4 2b3 â  S G T H IRFZ40/FI ELECTRICAL C HA -
OCR Scan
ATT220 ISOWATT22Q G45757
Abstract: SAMSUNG ELECTRONICS INC b4E D â  7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES â  SIIGK , * Current limited by wire & pm diameter MAXIMUM RATINGS Characteristic Symbol IRFZ44 IRFZ40 , > SAMSUNG ELECTRONICS INC â  IRFZ44/45 IRFZ40/42 ELECTRICAL CHARACTERISTICS Characteristic , Dram-Source Breakdown Voltage IR FZ44/45 IRFZ40/42 60 50 Gate Threshold Voltage - - V 2.0 , 2 4 S 2 fiTfi I SUGK N-CHANNEL POWER MOSFETS IRFZ40/42 SOURCE-DRAIN DIODE RATINGS AND -
OCR Scan
IRFZ40/42 IRFZ45 GQ12454

IRFZ44

Abstract: IRFZ44 mosfet IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES â'¢ Lower R0s (ON) â'¢ Improved , Part Number Vds RDs(on) Id IRFZ44 60V 0.028Û 35A IRFZ45 60V 0.035 Ã1 35A IRFZ40 50V 0 028Ã1 35A , Symbol IRFZ44 IRFZ45 IRFZ40 IRFZ42 Unit Drain-Source Voltage (1) Vdss 60 50 Vdc Drain-Gate Voltage , ELECTRONICS IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25°C unless , Voltage IRFZ44/45 IRFZ40/42 60 50 - - V VGS=0V, Id=250mA VGS(th) Gate Threshold Voltage 2.0 - 4.0 V
-
OCR Scan
IRFZ44 mosfet IRFZ44 MOSFETs IRFz44 n-channel MOSFET

IRFZ40PBF

Abstract: IRFZ40 INFORMATION Package TO-220 IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 Lead (Pb)-free SnPb ABSOLUTE , IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , may apply Document Number: 91385 S09-0936-Rev. A, 01-Jun-09 www.vishay.com 1 IRFZ40, SiHFZ40 , www.vishay.com 2 Document Number: 91385 S09-0936-Rev. A, 01-Jun-09 IRFZ40, SiHFZ40 Vishay Siliconix , . Temperature www.vishay.com 3 IRFZ40, SiHFZ40 Vishay Siliconix Fig. 5 - Typical Capacitance vs
Vishay Siliconix
Original
marking 0936

50N05E

Abstract: TP50N05E Cycle s 2%. (1) Add 0.3 V for IRFZ40. (iS = Rated Id , V q s = 0) VSD ton trr 1.3 (Typ) [ 2.2 , MOTOROLA TECHNICAL DATA SEM ICONDUCTOR IRFZ40 IRFZ42 TM O S POWER FETs 46 and 51 AMPERES rDS , 'C Derate above 25 C Operating and Storage Tem perature Range S ym bol IRFZ40 VDSS V DGR VGS ]D 'DM pd U , these devices. RtfJC R(UA 1 62.5 300 MOTOROLA TMOS POWER MOSFET DATA IRFZ40,42 , A) IRFZ40 IRFZ42 IRFZ40 IRFZ42 gFS IRFZ40 IRFZ42 17 17 - - VGS(th) rDS(on) *D(on) 2 -
-
OCR Scan
50N05E TP50N05E POWER MOSFET
Abstract: MOSFET ORDERING INFORMATION Package TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 Lead (Pb , IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL , ?91000 IRFZ40, SiHFZ40 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix Fig. 3 - Typical Capacitance vs Vishay Siliconix
Original
JS709A

ra 220 diode

Abstract: SGS-THOMSON !M OE » IO T ( q )K S IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS , ABSOLUTE MAXIMUM RATINGS Sym bol P aram eter IRFZ40 V V ds Value IR FZ40FI 50 50 ± 20 50 37 2 00 150 , ra ting a rea (#) T c * 5 0 Q C fo r T O -2 20 June 1992 1/7 295 IRFZ40/FI THERMAL DATA , # ftacnam uE C irR iB oaics SGS-ÏHOMSON IRFZ40/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING , sgs -th o m so n " 7# M C m M U K lIM M IIC S 298 IRFZ40/FI Transfer Characteristics
-
OCR Scan
ra 220 diode T0-220 GC3670D GC37000
Abstract: MOSFET ORDERING INFORMATION Package TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 Lead (Pb , IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ40 , AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix Fig. 3 - Typical Capacitance vs Vishay Siliconix
Original

IRFZ 150 circuit diagram

Abstract: irfz 44 ir ) Pulse width limited by safe operating area July 1993 1/9 IRFZ40/FI THERMAL DATA TO -220 , 1000 L L L L LL Q_ Q_ Q_ IRFZ40/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE , ISOWATT220 GC5 I 7 3 0 * 7 # BSIieR®BLIlTfMiaieS T SGS-THOMSON IRFZ40/FI Thermal Impedance for , IRFZ40/FI T ransconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage , Temperature * 7 # BSIieR®BLIlTfMiaieS T SGS-THOMSON 5/9 IRFZ40/FI Source-drain Diode Forward
-
OCR Scan
IRFZ 150 circuit diagram irfz 44 ir irfz
Abstract: MOSFET ORDERING INFORMATION Package TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 Lead (Pb , IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL , ?91000 IRFZ40, SiHFZ40 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix Fig. 3 - Typical Capacitance vs Vishay Siliconix
Original

IRFZ40

Abstract: SiHFZ40 INFORMATION Package TO-220AB IRFZ40PbF SiHFZ40-E3 IRFZ40 SiHFZ40 Lead (Pb)-free SnPb ABSOLUTE , IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix THERMAL RESISTANCE , ?91000 IRFZ40, SiHFZ40 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , AT www.vishay.com/doc?91000 IRFZ40, SiHFZ40 Vishay Siliconix Fig. 3 - Typical Capacitance vs
Vishay Siliconix
Original

OSRAM hlx 64623

Abstract: cd4013 application early demise of the power FET. Chosen for this design was the IRFZ40,which has an RDS(on) of 28 m, a , current specification of 28 A maximum. Although it does have a higher RDS(on) than the IRFZ40, it is a , more rigorous heat sinking than the IRFZ40. FETs with higher RDS (on) that the IRF540 are not , MIC5011 8 C1 3 C2 5 Gate 4 IRFZ40 V+ Input Source Gnd C1 COM 8 7 6 C2 Gate 5 IRFZ40 OSRAM HLX 64623 OSRAM HLX 64623 12V 12V 10µF 10µF
Micrel Semiconductor
Original
CD4013 OSRAM hlx 64623 cd4013 application police flasher OSRAM 12V halogen lamp CD4013 alternative IN5875 75X/M 120X/M
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