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IRFZ34NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRFZ34NSPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRFZ34NPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 visit Digikey Buy
IRFZ34NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
AUIRFZ34N Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy

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Part : IRFZ34NSTRLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,400 Best Price : $0.5870 Price Each : $0.5870
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Part : IRFZ34NSTRLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 865 Best Price : £0.4980 Price Each : £1.03
Part : IRFZ34N Supplier : International Rectifier Manufacturer : New Advantage Stock : 35 Best Price : - Price Each : -
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Part : IRFZ34NSTRLPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 4,800 Best Price : $0.5941 Price Each : $0.6312
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IRFZ34N Datasheet

Part Manufacturer Description PDF Type
IRFZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ34N with Standard Packaging Original
IRFZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original
IRFZ34N International Rectifier Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) Original
IRFZ34N International Rectifier HEXFET Power MOSFET Original
IRFZ34N Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ34N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 26A, Pkg Style TO-220AB Scan
IRFZ34N International Rectifier HEXFET Power MOSFET Scan
IRFZ34NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ34NL with Standard Packaging Original
IRFZ34NL International Rectifier HEXFET Power Mosfet Original
IRFZ34NL Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ34NLPBF International Rectifier HEXFET Power MOSFET Original
IRFZ34NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ34NL with Lead Free Packaging Original
IRFZ34NPBF International Rectifier 55V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package Original
IRFZ34NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ34NPBF with Standard Packaging Original
IRFZ34NS International Rectifier HEXFET Power MOSFET Original
IRFZ34NS International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ34NS with Standard Packaging Original
IRFZ34NS Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ34NSPBF International Rectifier HEXFET Power MOSFET Original
IRFZ34NSPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34NS with Lead Free Packaging Original
IRFZ34NSTRL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ34NS with Tape and Reel Left Packaging Original
Showing first 20 results.

IRFZ34N

Catalog Datasheet MFG & Type PDF Document Tags

f1010

Abstract: D0247 -9.1276B IRFZ34N D / \ Voss = 55V I ¡V Fbs(on) = 0.040Q \ / lD = 26A S Parameter Max , , Inc. This Material Copyrighted By Its Respective Manufacturer IRFZ34N International IGR Rectifier , International IGR Rectifier IRFZ34N 1000 1000 0.1 1 10 100 Vpg, Drain-to-Source Voltage (V) 100 VDg , www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer IRFZ34N , Material Copyrighted By Its Respective Manufacturer International IGR Rectifier IRFZ34N 25 50 75 100
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OCR Scan
f1010 D0247 2D 1002 diode for irfz34n T6A marking M6SS T0-220 00E473

IRFZ34N

Abstract: for irfz34n Previous Datasheet Index Next Data Sheet PD - _ IRFZ34N PRELIMINARY HEXFET , °C/W 8/29/95 Previous Datasheet Index Next Data Sheet IRFZ34N Electrical , ) Previous Datasheet Index Next Data Sheet IRFZ34N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , . Temperature Previous Datasheet Index Next Data Sheet IRFZ34N 1200 VGS , Gate-to-Source , 100 Previous Datasheet Index Next Data Sheet IRFZ34N RD VDS VGS 30 D.U.T
International Rectifier
Original
IRF1010

irf1010 applications

Abstract: IRF1010 power MOSFETs with new devices from IR. Tables 1 & 2 compare some parameters of the new IRFZ34N and , variations in device thermal behavior. Figures 1 & 2 show the IRFZ34N and IRF1010N with their respective , , replacing an IRFZ34 with the IRFZ34N will cause same or lower operating temperatures when the case to , IRFZ34N to IRFZ34 (25°C ratings) Parameter IRFZ34N IRFZ34 Net Effect Reason Chip Size 85x104 mils , Fig 1 - Replacing IRFZ34 with IRFZ34N Thermal Resistance, case to ambient °C/W Design Tips 3
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OCR Scan
irf1010 applications replacement guide irfz34 mosfets

mosfet IRFZ34N

Abstract: IRFZ34N PD - _ IRFZ34N PRELIMINARY HEXFET ® Power MOSFET Advanced Process Technology Dynamic , ­­­­ ­­­­ ­­­­ 0.50 ­­­­ 2.7 ­­­­ 62 °C/W 8/29/95 IRFZ34N Electrical , 25, IAS = 16A. (See Figure 12) Pulse width 300µs; duty cycle 2%. S+LD) IRFZ34N 1000 , (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N 1200 VGS , Gate-to-Source , VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFZ34N RD VDS
International Rectifier
Original
mosfet IRFZ34N IRFZ34N MOSFET irfz34n equivalent INTERNATIONAL RECTIFIER lt 200 diode driver irfz34n mosfets

IRF34N

Abstract: 1RFZ34N International ^Rectifier PRELIMINARY PD -9.1276A IRFZ34N HEXFET® Power MOSFET â'¢ Advanced Process , IRFZ34N IM» Electrical Characteristics @ Tj = 25° C (unless otherwise specified) Parameter Min. Typ , , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N I«R 1200 1000 VGS = 0 V , I©R IRFZ34N 30 25 u> CL E e , Thermal Impedance, Junction-to-Case IRFZ34N Fig 12a. Undamped Inductive Test Circuit / VDS- / »AS / '
-
OCR Scan
VIQR9246 IRF34N 1RFZ34N 1RFZ34 dioda rectifier V145M 100MS

IRFZ34N MOSFET

Abstract: IOR 438 IRFZ34N HEXFET® Power MOSFET Voss = 55 V R üS (o n ) = 0.0400 29A Id = Description Fifth , Surface Junction-to-Ambient Min. - - - Typ. - 0.50 - M ax. 2.2 - 62 Units °C/W C -435 IRFZ34N , -436 www.irf.com International IOR Rectifier IRFZ34N V D g , D r a in -to -S o u rce V oltage , On-Resistance Vs. Temperature C -437 IRFZ34N International lOR Rectifier Vpg , Drain-to-Source , IRFZ34N a > 3 o c '5 c Q 25 50 75 100 125 150 175 Tg , Case Temperature
-
OCR Scan
IOR 438 mosfet LT 438 1276C

IRFZ34N

Abstract: irf 405 PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , IRFZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(ON) VGS(th) gfs , 420A/µs, VDD V(BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2%. IRFZ34N 1000 1000 , (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N V GS C is s C rs s C is s C o , V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFZ34N 30
International Rectifier
Original
irf 405 O-220-AB

irfz34n

Abstract: PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , â'"â'"â'"â'" 2.2 â'"â'"â'"â'" 62 °C/W 8/25/97 IRFZ34N Electrical Characteristics @ TJ = 25 , /µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Â" Pulse width ≤ 300µs; duty cycle ≤ 2%. IRFZ34N , , Junction T emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N V GS C is s C , Operating Area 100 IRFZ34N 30 RD VDS VGS I D , Drain Current (A) 25 D.U.T. RG +
International Rectifier
Original

IRFZ34N

Abstract: IRF 250 PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , IRFZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(ON) VGS(th) gfs , 420A/µs, VDD V(BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2%. IRFZ34N 1000 1000 , (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N V GS C is s C rs s C is s C o , V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFZ34N 30
International Rectifier
Original
IRF 250
Abstract: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET® Power MOSFET â , *1 11b IRFZ34N International IQR , diode. D â'"^ IRFZ34N International IÃR Rectifier 1000 o o CO Q Cl 1 V , . Temperature 100 IRFZ34N C, Capacitance (pF) International IGR Rectifier V DS , Drain-to-Source , IRFZ34N Drain Current (Amps) International IG R Rectifier - Vqd ,D| Fig 10a. Switching -
OCR Scan
IOR9246

irfz34n equivalent

Abstract: IRFZ34N PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , IRFZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(ON) VGS(th) gfs , 420A/µs, VDD V(BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2%. IRFZ34N 1000 1000 , (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ34N V GS C is s C rs s C is s C o , V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRFZ34N 30
International Rectifier
Original

1RFPC50

Abstract: 1RFPC50LC ) (Ampa) Casa StyW,(C*m Outfna) (1) Oberate N-Channel IRFZ34N IRFZ46N IRF1010N 55 55 55 0.040 , 90325 90313 91351 T 0 220AB (H12) IRF3205 IRFZ14 IRFZ24N IRFZ34N IRFZ44N IRFZ48 IRF510 IRF520
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OCR Scan
IRF840LC 1RFPC50LC 1RFPC50 IRlz24n 1RFPc IRFz44n IRF540n T0-220AB IRF740LC IRFBC40LC IRF530N IRF540N
Abstract: IRFZ34N Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)26# I(DM) Max. (A) Pulsed I(D)18 @Temp (øC)100# IDM Max (@25øC Amb)100# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)56# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)175õ Thermal Resistance Junc-Case2.7 Thermal Resistance Junc-Amb.62 V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max American Microsemiconductor
Original

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO
Harris Semiconductor
Original
HRF3205 HUF75329P3 NBP6060 LC-98045 IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application IRF3205 TO-220 philips 435-2 HUF75337P3 HUF75321P3 HUF75309P3 HUF75339P3

AN-994

Abstract: IRFR4105 die contact Uses IRFZ34N data and test conditions * When mounted on 1" square PCB (FR-4 or G
International Rectifier
Original
IRFR4105 IRFU4105 AN-994 IRFU120 U120 IRF Power MOSFET code marking IRFR4105P IRFU4105P IRFR/U4105P

IRF4905 equivalent

Abstract: 800v irf 91354 IRLZ24N 91357 IRFZ34N 91276 IRLZ34N 91307 IRFZ44N 91303 IRFIZ24N 91501 IRLIZ24N
International Rectifier
Original
IRFP064N IRFP448 IRFPS473LC IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent irf510 switch IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 IRL2703

Diode LT 442

Abstract: Diode LT 443 International IGR Rectifier · Advanced Process Technology · Surface Mount (IRFZ34NS) · Low-profile through-hole (IRFZ34NL) · 175°C Operating Temperature · Fast Switching · Fully Avalanche Rated P D - 9.1311 A IRFZ34NS/L HEXFET® Power M O SFET Vdss = 55 V Ros(on) = 0.040Q I d = 29A Description , can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL , Capacitance Output Capacitance Reverse Transfer Capacitance IRFZ34NS/L Min. Typ. Max. Units 55 - - -
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OCR Scan
Diode LT 442 Diode LT 443 IRFZ34NS/L C-444

irfz34n 2430

Abstract: AN-994 PD - 95571 l l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRFZ34NSPbF IRFZ34NLPbF HEXFET® Power MOSFET D RDS(on) = 0.040 G ID = 29A , can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL , /04 IRFZ34NS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
International Rectifier
Original
IRF530S irfz34n 2430 IRFZ34NSP IRFZ34NLP IRFZ34NS/LP EIA-418

irf510 switch

Abstract: IRFBA40N60C IRLU2705 91317 IRFU1205 91318 L IRLU2905 91334 IRFZ24NL 91355 IRLZ24NL 91358 IRFZ34NL 91311 IRLZ34NL 91308 , 91354 IRLZ24N 91357 IRFZ34N 91276 IRLZ34N 91307 IRFZ44N 91303 IRLZ44N 91346 IRFZ46N 91277 IRFZ48N 91406
International Rectifier
Original
IRFBA40N60C IRL2505 IRF540NL IRF634L IRFU9024N IRF9520NL 220TM 247TM IRLU2703 IRFU3303 IRLU3303 IRFU3103

irfz34n equivalent

Abstract: diode c335 < 300ps; duty cycle < 2%. @t = 60s, / = 60Hz g, uses IRFZ34N data and test conditions C
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OCR Scan
IRFIZ34N diode c335 diode C339 C337 W DIODE c336 C337 W 61 C-336 C-337 C-338 C-339

ZENER DIODE 814

Abstract: zener 814 ) 232­3332 International Rectifier IRFZ34N (310) 322­2331 (310) 232­3332 1 L1 10 µH/5.0 , . Demonstration Board Schematic C9 330 TP5 U3 TL431 Q3 IRFZ34N C8 68 R36 1.0 k D6
ON Semiconductor
Original
CS5101 CS3843 ZENER DIODE 814 zener 814 panasonic ECU-S2A331JCB ECU-S1J104MEA UPR2A470MPH d616a CS5101DEMO/D
Showing first 20 results.