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IRFZ10PBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy

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Part : IRFZ10PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.6740 Price Each : $1.57
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Part : IRFZ10PBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 408 Best Price : £0.8270 Price Each : £1.31
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IRFZ10 Datasheet

Part Manufacturer Description PDF Type
IRFZ10 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original
IRFZ10 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRFZ10 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFZ10 N/A FET Data Book Scan
IRFZ10PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original

IRFZ10

Catalog Datasheet MFG & Type PDF Document Tags

n 332 ab

Abstract: INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM , IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix Fig. 5 - Typical
Vishay Siliconix
Original
n 332 ab HFZ10 2002/95/EC IRFZ10P HFZ10-E3 2011/65/EU

IRFZ10

Abstract: PD - 90440A IRFZ10 D G D S TO-220AB G Document Number: 90363 D S Gate Drain Source 06/24/05 www.vishay.com 1 IRFZ10 Document Number: 90363 www.vishay.com 2 IRFZ10 Document Number: 90363 www.vishay.com 3 IRFZ10 Document Number: 90363 www.vishay.com 4 IRFZ10 Document Number: 90363 www.vishay.com 5 IRFZ10 Document Number: 90363 www.vishay.com 6 IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations · Low
International Rectifier
Original
Abstract: SnPb TO-220 IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless , IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , : 90363 S-81393-Rev. A, 07-Jul-08 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , On-Resistance vs. Temperature Document Number: 90363 S-81393-Rev. A, 07-Jul-08 www.vishay.com 3 IRFZ10 Vishay Siliconix
Original
Abstract: PD - 90440A IRFZ10 D G D S TO-220AB G Document Number: 90363 D S Gate Drain Source 06/24/05 www.vishay.com 1 IRFZ10 Document Number: 90363 www.vishay.com 2 IRFZ10 Document Number: 90363 www.vishay.com 3 IRFZ10 Document Number: 90363 www.vishay.com 4 IRFZ10 Document Number: 90363 www.vishay.com 5 IRFZ10 Document Number: 90363 www.vishay.com 6 IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations â'¢ Low International Rectifier
Original
Abstract: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , Directive 2002/95/EC S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix , ?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Siliconix
Original
JS709A

IRFZ10

Abstract: PD - 90440A IRFZ10 D G D S TO-220AB G www.irf.com D S Gate Drain Source 1 06/24/05 IRFZ10 2 www.irf.com IRFZ10 www.irf.com 3 IRFZ10 4 www.irf.com IRFZ10 www.irf.com 5 IRFZ10 6 www.irf.com IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low , HEXFETS www.irf.com 7 IRFZ10 TO-220AB Package Outline (Dimensions are shown in millimeters
International Rectifier
Original

IRFZ12

Abstract: c409 diode - o f INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFZ10 IRFZ1S l\l-Channel 5 0 Volt , le T 0 - 2 2 0 A B D im e n s io n s in M illim e te r s a n d (in c h e s ) C-407 IRFZ10 and , INTERNATIONAL IRFZ10 50 50 7.2 4.6 29 RECTIFIER IRFZ12 50 50 5.9 3.7 24 ±20 20 0.16 T -3 9 -0 9 Units V , © Type IRFZ10 IRFZ12 ALL ALL A LL ALL IRFZ10 IRFZ12 RDS(onl Static Drain-Source On-State Resistance , ") Charge internal Drain Inductance A LL IRFZ10 IRFZ12 ALL ALL A LL A LL . ALL A LL A LL ALL A LL ALL ALL
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OCR Scan
c409 diode LG 72A diode C407 C408 diode C409 MAS5452 T0-220AB C-410 T-39-09 C-411 C-412

irfz12

Abstract: MOSFETS IRFZ14/15 IRFZ10/12 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ TO -220 Lower R d s (ON , â  o MAXIMUM RATINGS Symbol IRFZ10 IRFZ14 IRFZ12 IRFZ15 Unit Drain-Source , » ELECTRICAL CHARACTERISTICS Symbol Characteristic BVdss Drain-Source Breakdown Voltage IRFZ10/12 , (2) IRFZ10 IRFZ14 10 - - A VD s»3V, VG 10V s= IRFZ1 2/IRFZ1 5 8.3 â'" - A VGS(th) Igss Static Drain-Source On-State Resistance RDS(on) IRFZ10 IRFZ14 â
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OCR Scan
IRFZ10/12
Abstract: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , /95/EC S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix , ?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Siliconix
Original

IRFZ14

Abstract: IRFZ12 IRFZ14/15 IRFZ10/12 FEATURES · · · · · · · Lower R ds (ON) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS TO-220 IRFZ10/12 IRFZ14/1 5 PRODUCT SUMMARY Pari Number IRFZ10 IRFZ12 IRFZ14 IRFZ15 V ds 50V 50V 60V 60V Ros(on) 0 .2 0 n 0 .3 0 Id , seconds Notes: (1) (2) (3) (4) Symbol V dss V dqr Vgs Id Id Idm Igm Eas Ia s IRFZ10 50 50 IRFZ14 60 , IRFZ10/12 IRFZ14/15 ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source Breakdown Voltage
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OCR Scan

IRFZ10

Abstract: SiHFZ10 IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · · , N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , -Jul-08 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 -
Vishay Siliconix
Original
rating-175
Abstract: (Pb)-free SnPb TO-220 IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -2325-Rev. B, 11-Oct-10 www.vishay.com 1 IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS , %. www.vishay.com 2 Document Number: 90363 S10-2325-Rev. B, 11-Oct-10 IRFZ10, SiHFZ10 , -2325-Rev. B, 11-Oct-10 www.vishay.com 3 IRFZ10, SiHFZ10 Vishay Siliconix Fig. 5 - Typical Vishay Siliconix
Original
Abstract: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , Directive 2002/95/EC S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix , ?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Siliconix
Original

IRFZ10

Abstract: INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM , IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix Fig. 5 - Typical
Vishay Siliconix
Original

IRFZ10

Abstract: 20/IRFZ14 PRODUCT SUMMARY Part Number Vds RDS , Characteristic Min | Typ Max Units Test Conditions BVoss Drain-Source Breakdown Voltage IRFZ14 IRFZ10 60 50 - V
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OCR Scan
20/IRFZ14 IRFZ14/10
Abstract: INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM , IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix Fig. 5 - Typical Vishay Siliconix
Original
Abstract: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , Directive 2002/95/EC S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ10, SiHFZ10 Vishay Siliconix , ?91000 IRFZ10, SiHFZ10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Intertechnology
Original
Abstract: One. «_/ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFZ10 HEXFET* Power MOSFET Dynamic dv.'dt Rating 175-C Operating Ternp«ralijr« Fasl Switching Fn=,e rl Pa'alleing Simple Drive Requirements = 0.2012 The TO-220 package is universally tirt»furr«d luf all rommercial-industnal appkaliors at oower dissipation levete 10 , IRFZ10 Electrical Characteristics @ Tj = 25 C (unless otherwise specified) Parameter Drain-to-Sourcc New Jersey Semiconductor
Original
RG-24

SSP60N06

Abstract: irf630 irf640 MOSFETs TO-220 N-CHANNEL Part Number IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 IRF521 IRF531 IRF541 IRF510 IRF520 IRF530 IRF540 IRF611 IRF621 IRF631 IRF641 IRF610 IRF620 IRF630 IRF640 IRF614 1RF624 IRF634 IRF644 IRF711 IRF721 ÍRF731 IRF741 IRF710 IRF720 IRF730 IRF740 IRF821 IRF831 IRF841 IRF820 IRF830 IRF840 500 450 350 250 200 150 100 80 60 FUNCTION GUIDE BVdss^V) 50 lD(on)(A) 10.00 15.00 16.00 30.00 50.00 50.00
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OCR Scan
irf630 irf640

IRFZ25

Abstract: IRF51 n c A r c I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ15 IRFZ14 IRFZ25 IRFZ24 IRFZ35 IRFZ34 IRFZ45 IRFZ44 IRF513 IRF511 IRF523 IRF521 IRF533 IRF531 IRF543 IRF541 IRF512 IRF510 IRF522 IRF520 IRF532 IRF530 IRF542 IRF540 IRF613 IRF611 IRF623 IRF621 IRF633 IRF631 IRF643 IRF641 IRF612 IRF610 IRF622 IRF620 IRF632 IRF630 IRF642 IRF640 IRF615 IRF614 IRF625 IRF624 1RF635 IRF634 IRF645 IRF644 IRF713 IRF711 IRF723 IRF721 IRF733
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OCR Scan
IRF51 IRF731 IRF743 TQ-220AB

IRFZ30

Abstract: IRFZ45 THOMSON/ DISTRIBUTOR SflE D â  1D2fc,fl73 OOOSaDl m TCSK HEXFET power mosfets intsemieraonal Plastic Insertable Package [^Rectifier T0-220 N-Channel Vps Drain RDS(on) Iq Continuous â DM PU'» Pq Max Case Source On-State Drain Current Drain Power Outline Part Voltage Resistance 25°C Can Currant Dissipation Number Number (Volts) (Ohms) (Amps) (Amps) (Watts) (2) Notes Case Style IRFZ12 50 0.30 5.9 24 20 H5 (1) TO-220AB IRFZ10 0.20 7.2 29 20 IRFZ22 0.12 14 56 40 IRFZ20
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OCR Scan
irfz THOMSON DISTRIBUTOR 58e d THOMSON 58E THOMSON 58E CASE OUTLINE IRF635
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