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IRFS634/635

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Abstract: SAMSUNG ELECTRONICS INC b?E J> â  7^4142 â¡017354 B4b «SflGK N-CHANNEL IRFS634/635 POWER , '¢ Improved high temperature reliability TO-220F IRFS634/635 PRODUCT SUMMARY Part Number Vos RDs(on) Id , INC b?E D â  7^1142 Ã0173SS 1Ã2 «¡SflGK N-CHANNEL IRFS634/635 POWER MOSFETS ELECTRICAL , Electronics SAHSUNÃ" ELECTRONICS INC b?E D â  7^142 001735b DM «SflöK N-CHANNEL IRFS634/635 POWER , N-CHANNEL IRFS634/635 POWER MOSFETS Maximum Effective Transient Thermal Impedance Junction-to-Case Vs -
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IRFS635 sg 81a Z012I samsung 019 DD173S7 GD173S
Abstract: IRFS634/635 FEATURES · · · · · · · Low er R ds (ON) Im proved in d u c tive ru g g e d n e s s F , , V dd = 5 0 V , FtG= 2 5 n , Starting T j = 2 5 ° C 350 ELECTRONICS IRFS634/635 ELECTRICAL , IRFS634/635 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol , M axim um Sale O perating Area 352 ELECTRONICS IRFS634/635 N-CHANNEL POWER MOSFETS , IRFS634/635 N-CHANNEL POWER MOSFETS ' V Gc.=OV. f= 1 M H z p Ciss = Cgs + Cgd, Cds SHORTED ! -
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Abstract: IRFS634 N-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rds(on) â  Improved inductive , Number BVdss RDS(on) Id IRFS634 250V 0.45 n 5.5A TO-220 f I.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFS634 Unit Drain-Source Voltage (1) Voss 250 Vdc Drain-Gate Voltage , =5.5mH, Vdd=50V, Fta=25il, Starting Tj=25°C 382 ^^â â electronics â  7^4142 â¡â¡2ô2cib bGT IRFS634 , Gate-Drain ("Miller") Charge - 16.3 - nC THERMAL RESISTANCE Symbol Characteristics IRFS634 Units Remark -
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OS125
Abstract: 0.28 1.80 1.00 0.55 3.00 1.50 1.10 2.50 IRFS634 IRFS644 IRFS730 250 250 400 5.5 Taitron Components
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2N7000 2N7000A IRF510 IRF610 IRF620 IRF624
Abstract: IRFS624 IRFS634 IRFS644 IRFS730 IRFS740 RAGE 108 111 116 122 128 134 139 145 150 156 162 167 172 178 184 -
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KSP44 IRFR9120-TF SSP3055L Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 2n3904 2n3906 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088
Abstract: IRFS530 IRFS542 IRFS540 IRFS622 IRFS620 IRFS632 IRFS630 IRFS642 IRFS640 IRFS625 IRFS624 IRFS635 IRFS634 -
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IRFS541 IRFS522 irfsz22 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40
Abstract: MOSFETs TO-220 FULL PACKAGE N-CHANNEL Part Number IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 IRFSZ44 SSS50N06 SSS60N 06 IRFS521 IRFS531 IRFS541 IRFS520 IRFS530 IRFS540 IRFS621 IRFS631 IRFS641 IRFS620 IRFS630 IRFS640 IRFS624 IRFS634 1RFS644 IRFS721 IRFS731 IRFS741 IRFS720 IRFS730 IRFS740 IRFS821 IRFS831 IRFS841 IRFS820 ¡RFS830 IRFS840 SSS4N 55 SSS6N 55 SSS7N 55 SSS4N 60 SSS6N 60 SSS7N 60 BV d ss (V) lo(on)(A) RDS(on)(Q) FUNCTION GUIDE FWjc(KTW) 4.16 4.00 3.57 -
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sss6n60 SSS7N60 FS721
Abstract: (Max. in mm) 12.00 0.450 8.5 ID(ON)(A) 1.000 IRFSZ34 IRFS634 60 250 Taitron Components
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SSH20N50 SSH15N60 SSH40N20 IRFP254 IRFU010 SSH10N70 IRF9540 application IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 SSH60N10 SSH6N60 IRFP250 IRFP150
Abstract: IRFS624 IRFS625 IRFS634 IRFS635 IRFS644 IRFS645 IRFS730 IRFS731 IRFS732 IRFS733 IRFS740 IRFS741 IRFS742 , IRFS624 FET, 250V, 0.45R, 5.5A, 35W, N-CH, TO-220F USE IRFS634 FET, 250V, 0.28R, 8.5A, 40W, N-CH, TO -
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KSH117-1 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A
Abstract: INVESTORS | Sitema MY FA Home >> Find products >> 250V N-Channel B-FET / Substitute of IRFS634 & Fairchild Semiconductor
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IRFS634A irf 634b IRF634B/IRFS634B IRF634B IRFS634B IRFS634BT FP001