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Part : IRFR3504ZPBF Supplier : Infineon Technologies Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.76 Price Each : $1.80
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IRFR3504ZPBF Datasheet

Part Manufacturer Description PDF Type
IRFR3504ZPBF International Rectifier Original
IRFR3504ZPBF International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3504Z with Lead Free Packaging Original

IRFR3504ZPBF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0mâ"¦ G ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve , applications. D-Pak IRFR3504ZPbF I-Pak IRFU3504ZPbF Absolute Maximum Ratings Max. Parameter ID International Rectifier
Original
IRFR3504ZP IRFU3504ZP EIA-481 EIA-541 AN-994
Abstract: PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0m G ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low , IRFR3504ZPbF I-Pak IRFU3504ZPbF Absolute Maximum Ratings Parameter Max. ID @ TC = 25°C Continuous International Rectifier
Original

DH110

Abstract: AN-994 PD - 95521A IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0m G ID = 42A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per
International Rectifier
Original
IRFR3504Z IRFU3504Z DH110 IRFR120 IRFU120 823 d-pak IRFR/U3504ZP

IRLML0030

Abstract: IRLB3034 IRFR3504ZPBF IRF3805S-7PPBF IRF3205ZSPBF IRF3205ZPBF IRFZ48ZSPBF IRFZ48ZPBF IRFR1010ZPBF , IRF6616TRPBF MX IRFR4104PBF IRF4104SPBF IRF6614TRPBF IRFR3504ZPBF IRF3805S-7PPBF IRF3205ZSPBF , IRF4104SPBF IRF6614TRPBF IRFR3504ZPBF IRF3805S-7PPBF IRF3205ZSPBF IRF3205ZPBF IRFZ48ZSPBF
International Rectifier
Original
IRLML0030 IRLB3034 irfp4004 IRFB4110 irls4030 IRFB4020PBF

IRLML2502TRPBF

Abstract: IRLML2803TRPBF IRF7469PBF IRF7471TRPBF IRF7471PBF IRF7842PBF IRFR3504ZPBF IRF4104PBF IRF1404ZPBF IRF2804PBF IRF2804LPBF
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Original
IRLML2402TRPBF IRLML2502TRPBF IRLML2803TRPBF IRF7821TRPBF IRFR3709ZTRPBF IRF7413ZTR IRL3302PBF IRL3202PBF IRL3502SPBF IRLMS1902TRPBF IRF7101PBF

IRFR3504Z

Abstract: IRFU3504Z PD - 95521A IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0m G ID = 42A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per
International Rectifier
Original
Abstract: PD - 95521 IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0mâ"¦ G ID = 42A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per International Rectifier
Original

IRFR3504ZPBF

Abstract: IRFR3504Z PD - 95521A IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 9.0m G ID = 42A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per
International Rectifier
Original