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IRFIZ24N Datasheet

Part Manufacturer Description PDF Type
IRFIZ24N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24N with Standard Packaging Original
IRFIZ24N International Rectifier HEXFET Power MOSFET Original
IRFIZ24N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original
IRFIZ24N Toshiba Power MOSFETs Cross Reference Guide Original
IRFIZ24N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 13A, Pkg Iso TO-220 Fullpak Scan
IRFIZ24NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24NPBF with Standard Packaging Original
IRFIZ24NPBF International Rectifier 55V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package Original

IRFIZ24N

Catalog Datasheet MFG & Type PDF Document Tags

DIODE MARKING 1M

Abstract: IOR 451 single screw fixing. PD - 9.1501 A IRFIZ24N HEXFET® Power MOSFET A bsolute M axim um Ratings , Typ. - - Max. 5.2 65 Units °C /W 8/25/97 IRFIZ24N Electrical Characteristics @ T j , and test conditions T j < 175°C International IOR Rectifier 100 IRFIZ24N L , D rain , . Typical Transter Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ24N / GS = , Voltage Fig 8. Maximum Safe Operating Area International IOR Rectifier IRFIZ24N 25 50
-
OCR Scan
DIODE MARKING 1M IOR 451 T0-220

1501a

Abstract: irf 480 PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l , °C/W 8/25/97 IRFIZ24N Electrical Characteristics @ TJ = 25°C (unless otherwise specified , °C Uses IRFZ24N data and test conditions IRFIZ24N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V , . Temperature IRFIZ24N V GS C is s C rs s C os s C , C a p a c ita n c e (p F ) 600 500 20 , IRFIZ24N 15 RD VDS ID , Drain Current (A) VGS D.U.T. RG + - VDD 10 10V
International Rectifier
Original
1501a irf 480 I840G

IRFZ24N equivalent

Abstract: diode c329 Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated PD - 9.1501A IRFIZ24N , Junction-to-Ambient Typ. - - Max. 5.2 65 Units °C/W C-325 IRFIZ24N Electrical Characteristics @ Tj , International H&R Rectifier 100 IRFIZ24N < D 3 o o < /} as Q 20ns PULSE WIDTH Tj= 175°C 0.1 1 10 100 , On-Resistance Vs. Temperature C -3 2 7 IRFIZ24N Internationa Ì IQR Rectifier 1 10 1 00 0 , International IQ S R Rectifier IRFIZ24N Fig 9. Maximum Drain Current Vs. Case Temperature Fig 12c
-
OCR Scan
IRFZ24N equivalent diode c329 c328 equivalent c328 diode 12014A C-328 C-329
Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C Texas Instruments
Original
SLES045E TAS50XX

IRFIZ24N

Abstract: IRFZ24N PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l , °C/W 8/25/97 IRFIZ24N Electrical Characteristics @ TJ = 25°C (unless otherwise specified , °C Uses IRFZ24N data and test conditions IRFIZ24N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V , . Temperature IRFIZ24N V GS C is s C rs s C os s C , C a p a c ita n c e (p F ) 600 500 20 , IRFIZ24N 15 RD VDS ID , Drain Current (A) VGS D.U.T. RG + - VDD 10 10V
International Rectifier
Original
irf 044 mosfet
Abstract: PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l , . Max. Units â'"â'"â'" â'"â'"â'" 5.2 65 °C/W 8/25/97 IRFIZ24N Electrical , (BR)DSS, TJ ≤ 175°C  Uses IRFZ24N data and test conditions IRFIZ24N 100 100 VGS , 4. Normalized On-Resistance Vs. Temperature IRFIZ24N V GS C is s C rs s C os s C , C a p , Operating Area A 100 IRFIZ24N 15 RD VDS ID , Drain Current (A) VGS D.U.T. RG + International Rectifier
Original

d480 NPN

Abstract: A715 transistor R236 2.70R GND 2 Q228 IRFIZ24N 1 3 2 1 R234 1.00R D263 10MQ060 2 , 4.70k C285 680pF 2 GND C280 470nF 10nF 1 3 1 2 C224 Q227 IRFIZ24N 1 1 , R217 10k 1 MMBT2369A 2 DVDD 2 16k Q201 2 1 1 1 2 2 Q226 IRFIZ24N 1 , 10nF R231 2.70R R229 34 GHS_D Q225 IRFIZ24N 2 22k R211 V-HBRIDGE C223 1 , 1 1 2 2 2 1 20 GLS_C Q224 IRFIZ24N 1 1 AP 2 1.00R 1 10
Texas Instruments
Original
d480 NPN A715 transistor TRANSISTOR NPN D362 transistor a715 kemet capacitor 100nF 0603 d480 mosfet SLEA026 TAS5076-5182C6EVM TAS5076PFC TAS5182DCA TAS5076

NTC 47k

Abstract: NTC 4.7K 28 NTC TEMP NOTE: Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For , calculation: Given a TAS5182 system with 8 external IRFIZ24N MOSFETs and GVDD = 12 V. The power dissipation is , DE-MODULATION FILTER CHANNEL 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 , R245 4.70k 1 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 , 35 34 33 32 31 30 1 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260
Texas Instruments
Original
NTC 47k NTC 4.7K NTC 4,7k q221 SLES045C TAS50

ntc-47

Abstract: NTC 4,7 : Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete reference schematics , ) Example power dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and , GVDD Q226 IRFIZ24N 1 1R C211 1uF D262 10BQ060 R232 2.70R B GND R265 1 , D263 10BQ060 R236 2.70R 1 Q228 IRFIZ24N 1 1 R234 1.00R R284 4.70k V-HBRIDGE , 1 C224 Q227 IRFIZ24N 1 2 2 1 2 GND 1 R280 4.7R PVDD-D 1 1
Texas Instruments
Original
ntc-47 NTC 4,7 ntc 4.7 h-bridge gate drive schematics circuit q226 dvd supply with mosfet dm 100

R221

Abstract: NTC 4.7K TEMP NOTE: Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete , ) Example power dissipation calculation: Given a TAS5182 system with 8 external IRFIZ24N MOSFETs and GVDD = , Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 2 1 R244 4.70k R123 VR-FILT 1 22k OC-HIGH 2 2 , R243 4.70k R241 4.7R 2 2 2 R245 4.70k 1 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 , 43 42 41 40 39 38 37 36 35 34 33 32 31 30 1 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3
Texas Instruments
Original
R221 SLES045B
Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C Texas Instruments
Original
Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C Texas Instruments
Original

h-bridge gate drive schematics circuit

Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C
Texas Instruments
Original

h-bridge pwm schematics circuit

Abstract: NTC-47 : Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete reference schematics , ) Example power dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and , GVDD Q226 IRFIZ24N 1 1R C211 1uF D262 10BQ060 R232 2.70R B GND R265 1 , D263 10BQ060 R236 2.70R 1 Q228 IRFIZ24N 1 1 R234 1.00R R284 4.70k V-HBRIDGE , 1 C224 Q227 IRFIZ24N 1 2 2 1 2 GND 1 R280 4.7R PVDD-D 1 1
Texas Instruments
Original
h-bridge pwm schematics circuit 122nF l263 2AP10 SLMA002 TAS5000
Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C Texas Instruments
Original

NTC 4,7

Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C
Texas Instruments
Original
Abstract: Rectifier IRFIZ24N (8 places) For complete reference schematics contact Texas Instruments. 8 TAS5182 , dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and GVDD = 12 V. The , 1 L240 1 7uH 1 R240 4.7R 2 CH1-OUT+ D D 1 Q221 IRFIZ24N 1 R242 4.70k C245 680pF 2 , 1 R124 10k OC-LOW 1 Q222 IRFIZ24N D260 10BQ060 R224 2.70R 1 R263 1 2.70R C266 100nF 2 , 29 2 2 2 2 GND C205 PVDD-B 1 C222 Q223 IRFIZ24N 3 21 10nF R227 2.70R 2 L260 PVDD-A 1 75nH 2 C Texas Instruments
Original
ISO/TS16949

ntc-47

Abstract: NTC 22K : Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete reference schematics , ) Example power dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and , GVDD Q226 IRFIZ24N 1 1R C211 1uF D262 10BQ060 R232 2.70R B GND R265 1 , D263 10BQ060 R236 2.70R 1 Q228 IRFIZ24N 1 1 R234 1.00R R284 4.70k V-HBRIDGE , 1 C224 Q227 IRFIZ24N 1 2 2 1 2 GND 1 R280 4.7R PVDD-D 1 1
Texas Instruments
Original
NTC 22K Schematic active subwoofer circuit diagram subwoofer ic type amplifier circuit diagram TAS5182IDCA active subwoofer 2.1 BTL audio 100w

smd diode marking BM 46

Abstract: : Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete reference schematics , ) Example power dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and , GVDD Q226 IRFIZ24N 1 1R C211 1uF D262 10BQ060 R232 2.70R B GND R265 1 , D263 10BQ060 R236 2.70R 1 Q228 IRFIZ24N 1 1 R234 1.00R R284 4.70k V-HBRIDGE , 1 C224 Q227 IRFIZ24N 1 2 2 1 2 GND 1 R280 4.7R PVDD-D 1 1
Texas Instruments
Original
smd diode marking BM 46
Abstract: : Recommended power MOSFETs International Rectifier IRFIZ24N (8 places) For complete reference schematics , ) Example power dissipation calculation: Given a TAS5182 system with eight external IRFIZ24N MOSFETs and , 53 GLS_B 48 AP SLS_B Q224 IRFIZ24N 47 45 44 BP DHS_B PWM-AP-CH2 15 , 2 1 1 1 1 2 2 2 2 1.00R GVDD Q226 IRFIZ24N 1 D262 10BQ060 1 , 7uH R280 4.7R 2 C224 Q227 IRFIZ24N 3 C280 470nF 10nF R282 4.70k C285 680pF Texas Instruments
Original
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