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IRF9Z10PBF Vishay Siliconix Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
IRF9Z10 Vishay Siliconix Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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Part : IRF9Z10 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.2208 Price Each : €0.4375
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.6013 Price Each : $0.7363
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 946 Best Price : $0.6540 Price Each : $1.64
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.70 Price Each : $0.9350
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 1,110 Best Price : £0.1760 Price Each : £0.19
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 921 Best Price : $0.77 Price Each : $2.12
Part : IRF9Z10PBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 921 Best Price : £0.5710 Price Each : £0.9640
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IRF9Z10 Datasheet

Part Manufacturer Description PDF Type
IRF9Z10 International Rectifier HEXFET Power MOSFET Original
IRF9Z10 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original
IRF9Z10 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRF9Z10 N/A Shortform Datasheet & Cross References Data Scan
IRF9Z10 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9Z10 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF9Z10 N/A FET Data Book Scan
IRF9Z10PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 6.7A TO220AB Original
IRF9Z10S N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9Z10STRL N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF9Z10STRR N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

IRF9Z10

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Stability Product Sum m ary Part Number IRF9Z10 IRF9Z12 V DS RDS(on) !d -50V -50V o , e s ) C-373 IRF9Z10, IRF9Z12 Devices Absolute Maximum Ratings Parameter V os V DGR lD @ TC , D I 4055452 OOOfl bfi S 0 | I I NTE RNA TIONAL IRF9Z10 -5 0 -5 0 - 4 .7 -3 .0 -1 9 ± 20 , Specified) Parameter BV d s S Drain · Source Breakdown \foltage Type IRF9Z10 1RF9Z12 VGS(th) rGSS Ig s s , Voltage Drain Current On-State Drain Current © ALL A LL ALL A LL IRF9Z10 IRF9Z12 RoS(on) Static -
OCR Scan
T-39-19 K 3919 MOSFET k 3919 LM 3919 3919 C-376 T-39- C-378
Abstract: INFORMATION Package TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 Lead (Pb)-free SnPb , IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL RESISTANCE RATINGS , ?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS - 15 , AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 600 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd Vishay Siliconix
Original
HF9Z10 2002/95/EC IRF9Z10P HF9Z10-E3 2011/65/EU JS709A
Abstract: PD - 90459A IRF9Z10 D G D S TO-220AB G Document Number: 90118 D S Gate Drain Source 06/24/05 www.vishay.com 1 IRF9Z10 Document Number: 90118 www.vishay.com 2 IRF9Z10 Document Number: 90118 www.vishay.com 3 IRF9Z10 Document Number: 90118 www.vishay.com 4 IRF9Z10 Document Number: 90118 www.vishay.com 5 IRF9Z10 Document Number: 90118 www.vishay.com 6 IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations â'¢ Low International Rectifier
Original
Abstract: Number V DS RDS(on) !d IRF9Z10 -50V -50V o.5on -4.7A -4.0A IRF9Z12 o , IRF9Z10, IRF9Z12 Devices D I 4055452 OOOfl bfi S 0 | I NTERNATIONAL R E C T I F I E R Absolute Maximum Ratings T-39-19 IRF9Z10 IRF9Z12 Units V os Dratn - Source Vtoltage , Otherwise Specified) Parameter Type Min. Typ. Max. Units IRF9Z10 -5 0 - _ V , = 125°C - _ IRF9Z10 - 4 .7 - -4 .0 IRF9Z10 â'" 1RF9Z12 On-State Drain -
OCR Scan
Abstract: PD - 90459A IRF9Z10 D G D S TO-220AB G www.irf.com D S Gate Drain Source 1 06/24/05 IRF9Z10 2 www.irf.com IRF9Z10 www.irf.com 3 IRF9Z10 4 www.irf.com IRF9Z10 www.irf.com 5 IRF9Z10 6 www.irf.com IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low , HEXFETS www.irf.com 7 IRF9Z10 TO-220AB Package Outline (Dimensions are shown in millimeters International Rectifier
Original
DIODE NU
Abstract: PD - 90459A IRF9Z10 D G D S TO-220AB G Document Number: 90118 D S Gate Drain Source 06/24/05 www.vishay.com 1 IRF9Z10 Document Number: 90118 www.vishay.com 2 IRF9Z10 Document Number: 90118 www.vishay.com 3 IRF9Z10 Document Number: 90118 www.vishay.com 4 IRF9Z10 Document Number: 90118 www.vishay.com 5 IRF9Z10 Document Number: 90118 www.vishay.com 6 IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + International Rectifier
Original
Abstract: IRF9Z10/Z12 FEATURES · · · · · · · Lower R d s (ON) Improved inductive ruggedness Fast switching , Improved high temperature reliability P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9Z10 , gs Id Id Id m Ig m IRF9Z10/Z12 -5 0 -5 0 ±20 -4 .7 -3 .0 Unit Vdc Vdc Vdc -4 .0 -2 .5 -1 6 , ° C :£ SAMSUNG Electronics 217 IRF9Z10/Z12 ELECTRICAL CHARACTERISTICS Symbol BV dss VGS , Drain-Source Breakdown Voltage IRF9Z10/Z12 - 5 0 Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source -
OCR Scan
z12 diode diode sg 64 z-12 diode z12 IRF9Z10/Z12
Abstract: INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM , IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Number: 90118 S-81393-Rev. A, 07-Jul-08 www.vishay.com 1 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL , www.vishay.com 2 Document Number: 90118 S-81393-Rev. A, 07-Jul-08 IRF9Z10, SiHF9Z10 Vishay Siliconix , , 07-Jul-08 www.vishay.com 3 IRF9Z10, SiHF9Z10 Vishay Siliconix Fig. 5 - Typical Capacitance Vishay Siliconix
Original
Abstract: '¢ QGISSÃ"R 02Ã" « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s , Characteristic Symbol IRF9Z10 IRF9Z12 IRF9Z14 IRF9Z15 Unit Drain-Source Voltage (1) Vdss , ELECTRONICS ELECTRONICS INC b4E D 7Tb4142 00152*11 7flb â  SPIGK â  IRF9Z14/Z15 IRF9Z10/Z12 , ELECTRONICS SAMSUNG ELECTRONICS INC IR P 9 ?1 4/Z1 5 IRF9Z10/Z12 n b4E J > â  7 ^ 4 1 4 2 , ELECTRONICS INC b4E T > IRF9Z14/Z15 IRF9Z10/Z12 m 7Tb4142 00122C SST I SMGK I3 P-CHANNEL -
OCR Scan
Abstract: INFORMATION Package TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 Lead (Pb)-free SnPb , IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â'¢ â , FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL RESISTANCE RATINGS , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 , ?91000 IRF9Z10, SiHF9Z10 600 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Vishay Siliconix
Original
Abstract: IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , G D D P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , Number: 90118 S-81393-Rev. A, 07-Jul-08 www.vishay.com 1 IRF9Z10, SiHF9Z10 Vishay Siliconix , -81393-Rev. A, 07-Jul-08 IRF9Z10, SiHF9Z10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless Vishay Siliconix
Original
623mh
Abstract: IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix TYPICAL Vishay Siliconix
Original
Abstract: (on) id IRF9Z14 -60V 0.50 n -6.7A IRF9Z10 -50V 0.50 il -6.7A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF9Z14 IRF9Z10 Unit Drain-Source Voltage (1) Vdss -60 -50 Vdc Drain-Gate Voltage (Rgs=1 .OMO )(1 , Conditions BVdss Drain-Source Breakdown Voltage IRF9Z14 IRF9Z10 -60 -50 - - V V VGS=0V, ID=-250M VGS(ttl -
OCR Scan
IRF9Z14/10
Abstract: IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix TYPICAL Vishay Siliconix
Original
Abstract: IRF9Z14/Z15 IRF9Z10/Z12 FEATURES · · · · · · · Lower Ros ( O N ) Improved Inductive ru gg ed ness , ) Symbol V V dss dgr IRF9Z10 -5 0 -5 0 IRF9Z12 IRF9Z14 IRF9Z15 Unit Vdc Vdc Vdc -6 0 V , IRF9Z14/Z15 IRF9Z10/Z12 ELECTRICAL CHARACTERISTICS Symbol B V qss Characteristic D rain-So urce B , rating: P u lse width lim ited by max. junction tem perature 255 ELECTRONICS IRF9Z14/Z15 IRF9Z10 , ELECTRONICS IRF9Z14/Z15 IRF9Z10/Z12 P-CHANNEL POWER MOSFETS Vos. O RAIN-TO -SO URCE V O L T A G E -
OCR Scan
MOSFETs TO-220
Abstract: 3.00 2.40 1.50 1.20 0.80 0.70 0.50 Part Number IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 IRF9513 -
OCR Scan
IRF9511 IRF9613 IRF9631 IRF9643 IRF9641 IRF9632 IRF9642 IRF9523 IRF9521 IRF9Z25 IRF9Z24 IRF9533
Abstract: -7 (to-220) ircz44 ir N 60 35 0.028 irh-7 (to-220) IRF9Z10 ir P -50 ±20 -4. 7 20  , ±1000 ±20 4000 28 4 160 0. 2* 10 4.8 20* 15 2.4 4.8 120* 90* 30* 24 SOT-262 IRF9Z10 SAMSUNG P -50 -
OCR Scan
IRC530 SOT-123 IRF9110 PHILIPS TO220 blf544b IRCZ34 IRC840 BLF522 S0T-171 81F543 BLF544 BLF544B
Abstract: NEW NEW NEW NEW NEW TO-220 P-CHANNEL Part Number IRF9Z10 IRF9Z20 IRF9Z30 IRF9511 IRF9Z14 IRF9521 -
OCR Scan
SSP6N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9Z34 ssp5n80 SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP7N60
Abstract: IRF9Z12 -50 0.70 -4.0 -16 20 H5 (1) TO-220AB IRF9Z10 0.50 -4.7 -19 20 IRF9Z22 0.33 -8.9 -36 40 -
OCR Scan
IRF712 IRF722 IRF720 IRF732 IRF730 IRF742 1rf730 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRFBE32 T0-22QAB IRF710
Abstract: 800 900 1000 TO-220 P-Channel IRF9Z12 IRF9Z10 IRF9Z22 IR9FZ20 IRF9Z32 IRF9Z30 IRF9Z14 -
OCR Scan
IRFBC20 IRF740 IRF823 IRF821 IRF833 IRF831 IRF843
Abstract: IRF9631 IRF9632 IRF9633 IRF9640 IRF9641 IRF9642 IRF9643 IRF9Z10 IRF9Z12 PAGE 157 157 157 157 162 162 , , 0.5R, 11 A, 125W, P-CH, T0-220 IRF9641 IRF9642 IRF9643 USE IRF9640 USE IRF9640 USE IRF9640 IRF9Z10 IRF9Z12 FET, 50V, 0.50R, 4.7A, 20W, P-CH, T0-220 USE IRF9Z10 IRF9Z20 IRF9Z22 FET, 50V, 0.28R -
OCR Scan
IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403
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