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IRF9630/9631

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Abstract: IRF9630/9631 /9632/9633 FEATURES · · · · · · · Lower R ds (ON) Improved inductive ruggedness Fast , max. junction temperature eg SAM SUN G Electronics 208 IRF9630/9631 /9632/9633 P-CHANNEL , SUNG Electronics 209 IRF9630/9631/9632/9633 P-CHANNEL POWER MOSFETS t1. SQUARE WAVE PULSE , . Temperature Normalized On-Resistance Vs. Temperature eg Electronics SA M SU N G 210 IRF9630/9631 , Improved high temperature reliability P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630 -
OCR Scan
IRF9631 IRF9632 MOSFET IRF9630 IRF9630 mosfet F9633 IRF9633 IRF9630/9631/9632/9633 IRF9630-3
Abstract: IRF9630/9631/9632/9633 IRFP9230/9231 /9232/9233 FEATURES · · · · · · · Lower R d s < on> Improved , IRF9630/9631/9632/9633 IRFP9230/9231 /9232/9233 ELECTRICAL CH A RA CTERIST IC S Symbol Characteristic , . junction temperature 243 ELECTRONICS IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL , Transfer Characteristics 244 ELECTRONICS IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 , IRF9630/9631 /9632/9633 IRFP9230/9231 /9232/9233 P-CHANNEL POWER MOSFETS Tj, J U N C T IO N T E M P -
OCR Scan
IRFP9230 IRFP9231 IRFP9232 IRFP9233 IRFP9230/9231Z9232/9233
Abstract: SAMSUNG ELECTRONICS INC b4E D â  7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632 , temperature reliability IRF9630/9631/9632/9633 TO-3P PRODUCT SUMMARY Part Number Vos R0S(on , SAMSUNG ELECTRONICS INC b4E D â  7 ^ 4 1 4 2 001227à 242 IRF9630/9631/9632/9633 IRFP9230 , C T R O N I C S INC b4E D â  IRF9630/9631 /9632Z9633 IRFP9230/9231/9232/9233 7t , TTG IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 P-CHANNi=r POWER MOSFETS -O P E R A -
OCR Scan
1RF9630 IRF9630/IRFP9230 IRF9632/IRFP9232 IRF9633/IRFP9233 QQ122
Abstract: IRF9630/9631 P-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rds(ON) â  Improved inductive ruggedness â , limited by max. junction temperature 393 ELECTRONICS 7^4142 0020132 Ibb IRF9630/9631 P-CHANNEL POWER , ^^^^^EIECTRONICS â  TUHmS OOEfilBB Ã"T2 394 IRF9630/9631 P-CHANNEL POWER MOSFETS 11. SQUARE WAVE PULSE DURAT10N , (on) lo IRF9630 -200V 0.8 n -6.5A IRF9631 -150V 0.8 il -6.5A ABSOLUTE MAXIMUM RATINGS Characterìstic Symbol IRF9630 IRF9631 Unit Drain-Source Voltage (1) Vdss -200 -150 Vdc Drain-Gate Voltage (Rgs=1 .OMfl -
OCR Scan
Abstract: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 FEATURES · · · · · · · , max. junction temperature «RSAM SUNG Electronics 461 IRF9630/9631/9632/9633 IRFP9230/9231 , Characteristics egElectronics SAM SUNG 462 IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230 , IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS Tj , P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 -
OCR Scan
diode 9232 IRF9630/IR IRF9231 IRF9632/IRFP9232/ IRF9232 IRF9633/IRFP9233/
Abstract: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 Preliminary , IRFP9230/9231 /9232/9233 IRF9630/9631 /9G32/9633 MAXIMUM RATINGS IBF/IRFP Characteristic Drain-Source , Part Number IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963.1 IRF/IRFP9232, IRF9632 IRF/IRFP9233, IRF9633 , 9230 9630 -2 0 0 -2 0 0 9231 9631 -1 5 0 -1 5 0 ±20 9232 9632 -2 0 0 ' - 20 0 9233 9633 -1 5 , SAM SUNG SEMICONDUCTOR 416 L Jv ^ IRF9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9630 -
OCR Scan
9232 D0QS417 IRF9230/9231 GS435 F--13
Abstract: /9233 TO-220 IRF9630/9631 /9632/9633 MAXIMUM RATINGS Characteristic Symbol IRF/IRFP Unit 9230 9630 9231 9631 9232 9632 9233 9633 Drain-Source Voltage (1 ) Voss -200 -150 -200 -150 Vdc Drain-Gate , IRF9630/9631Z9632/9633 DEJ7^]^ D0DS417 3 P-CHANNEL M POWER MOSFETS Ç' - : ' ^ Preliminary Specifications -200 Volt, 0.8 Ohm SFET PRODUCT SUMMARY Part Number Vos RoS(on) Id IRF/IRFP9230, IRF9630 , ^P-channizl : v IRF9630/9631Z9632/9633 _ POWER MOSFETS 7964142 SAMSUNG SEMICONDUCTOR INC Q8D 054 18 D -
OCR Scan
1RFP9240 irfp 9640 1RF9540 l 9143 L 9141 1RF9240 IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS IRF/IRFP9130 IRF9530
Abstract: of paralleling, and excellent temperature stability. The P-Channel IRF9630 device is an approxìmate , amplifiers. Product Summary Part Number Vos fDS(on) "D IRF9630 -200V 0.8Ã2 -6.5A IRF9631 -150V 0.8Ã2 -6.5A , Style T0-220AB Ail Dimensions in Millimeters and (fnches) C-361 UE D I MÃ5S4S2 aGüöbl3 3 IRF9630 , IRF9630 IRF9631 IRF9632 IRF9633 Units Vqs Drain - Source Voltage © -200 -150 -200 -150 V Vdqh Drain - , BVq33 Drain - Source Breakdown Voltage IRF9630 IRF9632 -200 - - V VQS = OV lD = -250/zA IRF9631 -
OCR Scan
c366 dsa 362 irf P-Channel MOSFET audio IRF620 X005O C-365 S54S2
Abstract: IRFS9630/9631 P-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rds(on) â'¢ Improved inductive ruggedness â'¢ Fast switching times â'¢ Rugged polysilicon gate cell structure â'¢ Lower input capacitance , =250, Starting Tj=25°C ELECTRONICS 572 IRFS9630/9631 P-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage IRF$9630 IRFS9631 -200 -150 - - V V Vgs=0V, Id=-250M VGS(th) Gate Threshold , cnonuirc 573 IRFS9630/9631 P-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS -
OCR Scan
IRFS9630 J 9631 mosfet 9630 irf 9630 IRFS9630/9631
Abstract: H A R F R I S S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630 , IRF9630 IRF9631 IRF9632 IRF9633 RF1S9630 RF1S9630SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO -262AA TO-263AB BRAND IRF9630 IRF9631 IRF9632 IRF9633 RF1S9630 RF1S9630 NOTE: When ordering, use the , Number 2224.1 IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF9630, RF1S9630, RF1S9630SM Drain to Source Voltage (Note 1 -
OCR Scan
TA17512 TB334 RF1S9630SM9A
Abstract: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg , -220 IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , -Jun-08 www.vishay.com 1 IRF9630, SiHF9630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , -81272-Rev. B, 16-Jun-08 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , . Temperature Document Number: 91084 S-81272-Rev. B, 16-Jun-08 www.vishay.com 3 IRF9630, SiHF9630 Vishay Siliconix
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HF9630 IRF9630P HF9630-E3
Abstract: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , -220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 Vishay , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 , ?91000 IRF9630, SiHF9630 1200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Vishay Siliconix
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2002/95/EC
Abstract: Rugged Power MOSFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 , IRF9630, IRF9631, IRF9632 and IRF9633 are advanced power MOSFETs designed, tested, and guaranteed to , CHARACTERISTIC IRF9630 IRF9631 IRF9632 IRF9633 UNITS Drain-Source Voltage © VDS -200 -150 -200 -150 V , MOSFETs IRF9630, IRF9631, IRF9632, IRF9633 ELECTRICAL CHARACTERISTICS, At T- = 25° C (Unless Otherwise , BVoss IRF9630 IRFS632 -200 - - V Vgs = 0 V lo = -250 uA IRF9631 IRF9633 -150 - - V Gate Threshold -
OCR Scan
IRF 1630 IRP9 irf98 transistor IRF 630 JEDECTO-220AB 92CS-39328 92CS-43313 92CS- 92CS-43316 B2CS-4330S
Abstract: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are , IRF9630 TO-220AB RF1S9630SM TO-263AB D IRF9630 RF1S9630 G NOTE: When ordering, use , ) ©2002 Fairchild Semiconductor Corporation DRAIN (FLANGE) GATE SOURCE IRF9630, RF1S9630SM Rev. B IRF9630, RF1S9630SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source , . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9630, RF1S9630SM -200 -200 -6.5 -4 Fairchild Semiconductor
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5a,200v power diode MOSFET IRF9630 Datasheet
Abstract: IRF9630, RF1S9630SM Data Sheet July 1999 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs , Components to PC Boards" Symbol BRAND IRF9630 TO-220AB TO-263AB D IRF9630 RF1S9630SM , Fairchild Semiconductor Corporation IRF9630, RF1S9630SM Rev. A IRF9630, RF1S9630SM Absolute Maximum , . . . . Tpkg IRF9630, RF1S9630SM -200 -200 -6.5 -4 -26 ±20 75 0.6 500 -55 to 150 , Internal Devices Inductances D LD G LS S IRF9630, RF1S9630SM Rev. A IRF9630, RF1S9630SM Fairchild Semiconductor
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Abstract: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · · , IRF9630 SiHF9630 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , Number: 91084 S-81272-Rev. B, 16-Jun-08 www.vishay.com 1 IRF9630, SiHF9630 Vishay Siliconix , -Jun-08 IRF9630, SiHF9630 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - , Document Number: 91084 S-81272-Rev. B, 16-Jun-08 www.vishay.com 3 IRF9630, SiHF9630 Vishay Vishay Siliconix
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IRF9630PBF
Abstract: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are , Boards" Symbol BRAND IRF9630 TO-220AB RF1S9630SM TO-263AB D IRF9630 RF1S9630 G , 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9630, RF1S9630SM Absolute Maximum Ratings TC = , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF9630 , LD G LS S IRF9630, RF1S9630SM Source to Drain Diode Specifications PARAMETER SYMBOL Intersil
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ISO9000
Abstract: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm , IRF9630 TO-220AB IRF9630 RF1S9630SM TO-263AB RF1S9630 NOTE: When ordering, use the , -H A R R IS or 407-727-9207 | C opyright © Harris C orporation 1999 IRF9630, RF1S9630SM Absolute , . T.J t STG IRF9630, RF1S9630SM -200 -200 -6.5 -4 -26 ±20 75 0.6 500 -55 to 150 , 1.67 °C /W - - 80 °C /W IRF9630, RF1S9630SM Source to Drain Diode Specifications -
OCR Scan
Abstract: o . SOURCE >DRAIN 'GATE D escription The IRF9630, IRF9631, IR F9632 and IR F9633 are advanced , 0.8, V q s - OV, T q s* + 1 2 5 °C On-State Drain Current (Note 2) IRF9630, IRF9631 IRF9632, IRF9633 Static Drain-Source O n-State Resistance (Note 2) IRF9630, IRF9631 IRF9632, IRF9633 Forward , ) 5 -8 6 IRF9630, IR F 9 6 3 1, IRF9632, IR F9633 V D s - D R A IN -T O -S O U R C E V O LT A G , IRF9630, IR F 9 6 3 1, IRF9632. /R F9633 V s D . SO U R C C T O O R A IN V O LT A G E (V O L T S -
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F9630 92CS-43312 92CS-43270 92CS-43284 92CS-433U
Abstract: International SS Rectifier PD-9.352F IRF9630 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating , Case-to-Sink, Flat, Greased Surface â'" 0.50 â'" Rbja Junction-to-Ambient â'" â'" 62 371 IRF9630 , ) Fig 1. Typical Output Characteristics, Tc=25°C IRF9630 -Vds, Drain-to-Source Voltage (volts) Fig 2 , On-Resistance Vs. Temperature 373 IRF9630 I«R Vgs ^iss ~ '-gs ov, f = 1MHz * Cgs + cgd. Cds SHORTED , , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature IRF9630 Ro Vds >- 4.;Vdd -
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T0-220
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