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IRF9630/9631

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Abstract: IRF9630/9631 /9632/9633 FEATURES · · · · · · · Lower R ds (ON) Improved inductive ruggedness Fast , max. junction temperature eg SAM SUN G Electronics 208 IRF9630/9631 /9632/9633 P-CHANNEL , SUNG Electronics 209 IRF9630/9631/9632/9633 P-CHANNEL POWER MOSFETS t1. SQUARE WAVE PULSE , . Temperature Normalized On-Resistance Vs. Temperature eg Electronics SA M SU N G 210 IRF9630/9631 , Improved high temperature reliability P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630 ... OCR Scan
datasheet

5 pages,
183.51 Kb

IRF9632 IRF9631 IRF9630 mosfet MOSFET IRF9630 irf9630 IRF9630/9631 TEXT
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Abstract: IRF9630/9631/9632/9633 IRFP9230/9231 IRFP9230/9231 /9232/9233 FEATURES · · · · · · · Lower R d s < on> Improved , IRF9630/9631/9632/9633 IRFP9230/9231 IRFP9230/9231 /9232/9233 ELECTRICAL CH A RA CTERIST IC S Symbol Characteristic , . junction temperature 243 ELECTRONICS IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 P-CHANNEL , Transfer Characteristics 244 ELECTRONICS IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 , IRF9630/9631 /9632/9633 IRFP9230/9231 IRFP9230/9231 /9232/9233 P-CHANNEL POWER MOSFETS Tj, J U N C T IO N T E M P ... OCR Scan
datasheet

6 pages,
198.93 Kb

irf9630 IRF9630/9631/9632/9633 IRFP9230/9231 TEXT
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Abstract: SAMSUNG ELECTRONICS INC b4E D ■ 7 ^ 4 1 4 2 0Q12277 0Q12277 30b « S M G K IRF9630/9631 /9632 , temperature reliability IRF9630/9631/9632/9633 TO-3P PRODUCT SUMMARY Part Number Vos R0S(on , SAMSUNG ELECTRONICS INC b4E D ■ 7 ^ 4 1 4 2 001227Ö 242 IRF9630/9631/9632/9633 IRFP9230 IRFP9230 , C T R O N I C S INC b4E D ■ IRF9630/9631 /9632Z9633 /9632Z9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 7t , TTG IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 P-CHANNi=r POWER MOSFETS -O P E R A ... OCR Scan
datasheet

6 pages,
167.56 Kb

1RF9630 TEXT
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Abstract: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9230/923179232/9233 FEATURES · · · · · · · , max. junction temperature «RSAM SUNG Electronics 461 IRF9630/9631/9632/9633 IRFP9230/9231 IRFP9230/9231 , Characteristics egElectronics SAM SUNG 462 IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9230 IRF9230 , IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS Tj , P-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF9630/IR FP9230/ FP9230/ IRF9230 IRF9230 IRF9631 IRF9631 /IRFP9231 /IRFP9231 ... OCR Scan
datasheet

6 pages,
320.44 Kb

IRFP9232 IRFP9230 IRF9632 IRF9631 IRF9230 diode 9232 MOSFET IRF9630 irf9630 IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 TEXT
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Abstract: IRF9630/9631 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds(ON) ■ Improved inductive ruggedness â , limited by max. junction temperature 393 ELECTRONICS 7^4142 0020132 Ibb IRF9630/9631 P-CHANNEL POWER , ^^^^^EIECTRONICS ■ TUHmS OOEfilBB ÔT2 394 IRF9630/9631 P-CHANNEL POWER MOSFETS 11. SQUARE WAVE PULSE DURAT10N DURAT10N , (on) lo IRF9630 -200V -200V 0.8 n -6.5A IRF9631 IRF9631 -150V -150V 0.8 il -6.5A ABSOLUTE MAXIMUM RATINGS Characterìstic Symbol IRF9630 IRF9631 IRF9631 Unit Drain-Source Voltage (1) Vdss -200 -150 Vdc Drain-Gate Voltage (Rgs=1 .OMfl ... OCR Scan
datasheet

5 pages,
285.46 Kb

IRF9631 MOSFET IRF9630 IRF9630 IRF9630/9631 TEXT
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Abstract: F LÌI IRF9230/9231Z9232/9233 IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 RFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 Preliminary , IRFP9230/9231 IRFP9230/9231 /9232/9233 IRF9630/9631 /9G32/9633 /9G32/9633 MAXIMUM RATINGS IBF/IRFP Characteristic Drain-Source , Part Number IRF/IRFP9230 IRF/IRFP9230, IRF9630 IRF/IRFP9231 IRF/IRFP9231, IRF963 IRF963.1 IRF/IRFP9232 IRF/IRFP9232, IRF9632 IRF9632 IRF/IRFP9233 IRF/IRFP9233, IRF9633 IRF9633 , 9230 9630 -2 0 0 -2 0 0 9231 9631 -1 5 0 -1 5 0 ±20 9232 9632 -2 0 0 ' - 20 0 9233 9633 -1 5 , SAM SUNG SEMICONDUCTOR 416 L Jv ^ IRF9230/9231/9232/9233 IRF9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRFP9230/9231/9232/9233 IRF9630 ... OCR Scan
datasheet

5 pages,
363.31 Kb

IRFP9230 IRF9632 IRF9630 irf963 9232 1RF9630 diode 9232 IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 TEXT
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Abstract: of paralleling, and excellent temperature stability. The P-Channel IRF9630 device is an approxìmate , amplifiers. Product Summary Part Number Vos fDS(on) "D IRF9630 -200V -200V 0.8Í2 -6.5A IRF9631 IRF9631 -150V -150V 0.8Í2 -6.5A , Style T0-220AB T0-220AB Ail Dimensions in Millimeters and (fnches) C-361 C-361 UE D I MÖ5S4S2 aGüöbl3 3 IRF9630 , IRF9630 IRF9631 IRF9631 IRF9632 IRF9632 IRF9633 IRF9633 Units Vqs Drain - Source Voltage © -200 -150 -200 -150 V Vdqh Drain - , BVq33 Drain - Source Breakdown Voltage IRF9630 IRF9632 IRF9632 -200 - - V VQS = OV lD = -250/zA IRF9631 IRF9631 ... OCR Scan
datasheet

6 pages,
452.74 Kb

IRF9633 IRF9632 irf P-Channel MOSFET audio dsa 362 c366 IRF9631 MOSFET IRF9630 IRF9630 TEXT
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Abstract: /9233 TO-220 IRF9630/9631 /9632/9633 MAXIMUM RATINGS Characteristic Symbol IRF/IRFP Unit 9230 9630 9231 9631 9232 9632 9233 9633 Drain-Source Voltage (1 ) Voss -200 -150 -200 -150 Vdc Drain-Gate , IRF9630/9631Z9632/9633 DEJ7^]^ D0DS417 D0DS417 3 P-CHANNEL M POWER MOSFETS Ç' - : ' ^ Preliminary Specifications -200 Volt, 0.8 Ohm SFET PRODUCT SUMMARY Part Number Vos RoS(on) Id IRF/IRFP9230 IRF/IRFP9230, IRF9630 , ^P-channizl : v IRF9630/9631Z9632/9633 _ POWER MOSFETS 7964142 SAMSUNG SEMICONDUCTOR INC Q8D 054 18 D ... OCR Scan
datasheet

12 pages,
508.42 Kb

IRF9541 mosfet IRF MOSFET IRF9630 IRF9540 IRF 9530 IRF9630 Samsung IRF96XX irf 100v 100A IRFP P CHANNEL IRF 409 IRFP9I40 mosfet IRF 9540 IRF95XX 1rfp9140 IRF9130/9131/9132/9133 IRFP9130/9131 L 9141 IRF9130/9131/9132/9133 IRFP9130/9131 1RF9240 IRF9130/9131/9132/9133 IRFP9130/9131 l 9143 IRF9130/9131/9132/9133 IRFP9130/9131 1RF9540 IRF9130/9131/9132/9133 IRFP9130/9131 irfp 9640 IRF9130/9131/9132/9133 IRFP9130/9131 1RFP9240 IRF9130/9131/9132/9133 IRFP9130/9131 IRF9130/9131/9132/9133 IRF9130/9131/9132/9133 IRFP9130/9131 IRFP9130/9131 IRF9530/9531Z9532/9533 TEXT
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Abstract: IRFS9630/9631 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance , =250, Starting Tj=25°C ELECTRONICS 572 IRFS9630/9631 P-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage IRF$9630 IRFS9631 IRFS9631 -200 -150 - - V V Vgs=0V, Id=-250M -250M VGS(th) Gate Threshold , cnonuirc 573 IRFS9630/9631 P-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ... OCR Scan
datasheet

3 pages,
123.67 Kb

MOSFET IRF9630 IRFS9631 irf 9630 mosfet 9630 J 9631 IRFS9630 IRFS9630/9631 TEXT
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Abstract: H A R F R I S S E M I C O N D U C T O R IRF9630, IRF9631 IRF9631, IRF9632 IRF9632, IRF9633 IRF9633, RF1S9630 RF1S9630 , IRF9630 IRF9631 IRF9631 IRF9632 IRF9632 IRF9633 IRF9633 RF1S9630 RF1S9630 RF1S9630SM RF1S9630SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO -262AA -262AA TO-263AB BRAND IRF9630 IRF9631 IRF9631 IRF9632 IRF9632 IRF9633 IRF9633 RF1S9630 RF1S9630 RF1S9630 RF1S9630 NOTE: When ordering, use the , Number 2224.1 IRF9630, IRF9631 IRF9631, IRF9632 IRF9632, IRF9633 IRF9633, RF1S9630 RF1S9630, RF1S9630SM RF1S9630SM Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF9630, RF1S9630 RF1S9630, RF1S9630SM RF1S9630SM Drain to Source Voltage (Note 1 ... OCR Scan
datasheet

7 pages,
406.39 Kb

RF1S9630 MOSFET IRF9630 IRF9633 IRF9632 IRF9631 irf9630 IRF9630 RF1S9630SM -150V -200V TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
1-800-4-HARRIS 1-800-4-HARRIS - IRF9630, IRF9631 IRF9631, IRF9632 IRF9632, IRF9633 IRF9633 1-800-4-HARRIS 1-800-4-HARRIS Ask for document number FN2224 FN2224 IRF9630, IRF9631 IRF9631, IRF9632 IRF9632, IRF9633 IRF9633 5.5A and 6.5A, 150V and 200V, 0.800 and 1.200 ohm, Avalanche Rated, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS) For products not on the web, U.S. and Canada callers dial 1-800-4-HARRIS 1-800-4-HARRIS (1-800-442-7747) ext. 700, International callers dial 407-727-9207. Here's where you can find out how to get your free
/datasheets/files/harris/data/fn/fn2/fn2224/index.htm
Harris 15/08/1997 2.26 Kb HTM index.htm
IRF9540NL IRF9540NL IRF9540NS IRF9540NS IRF9540S IRF9540S IRF9610 IRF9610 IRF9610S IRF9610S IRF9620 IRF9620 IRF9620S IRF9620S IRF9630 IRF9630S IRF9630S
/datasheets/files/international-rectifier/docs/wcd00000/wcd000df.htm
International Rectifier 06/10/1998 39.05 Kb HTM wcd000df.htm
-2.5 3.1 40 IRF9630 TO-220AB DISCRETE P STANDARD -200 .8 -10
/datasheets/files/international-rectifier/product-info/shortform/dslink/fetd-326.html
International Rectifier 24/07/2000 46.46 Kb HTML fetd-326.html
N=1.5 RS=1.78 BV=200 CJO=301P VJ=.8 M=.42 TT=300N) .MODEL DLIM D (IS=100U) .ENDS XIRF9620 XIRF9620 *IRF9630
/datasheets/files/spicemodels/misc/models/pemos3t.mod
Spice Models 27/08/2003 8.82 Kb MOD pemos3t.mod
symloc IRF9630:TO220 6480 27 symloc IRF9631 IRF9631:TO220 6507 27 symloc IRF9632 IRF9632:TO220 6534 27 symloc IRF9633 IRF9633 *package IRF9623 IRF9623 ako TO220 *package IRF9630 ako TO220 *package IRF9631 IRF9631 ako TO220 *package IRF9632 IRF9632 ako TO220
/datasheets/files/spicemodels/misc/models/pwrmos.plb
Spice Models 27/08/2003 33.66 Kb PLB pwrmos.plb
3.00 2.400 TO-220AB NA IRF9630 P   200  6.50 0.800 TO-220AB NA
/datasheets/files/harris/pwr/pwr_psg.htm
Harris 15/08/1997 266.47 Kb HTM pwr_psg.htm
ohm, Avalanche Rated, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS) IRF9630, IRF9631 IRF9631, IRF9632 IRF9632, IRF9633 IRF9633
/datasheets/files/harris/families/pwr.htm
Harris 15/08/1997 90.49 Kb HTM pwr.htm
) M1 D G S S mosfet D1 D S Diode Cgs G S 3.19E-10 19E-10 .ends .subckt IRF9630 D G S .model mosfet PMOS
/datasheets/files/spicemodels/misc/spice_model_cd/vendor list/simetrix/mosfet.lb
Spice Models 29/07/2012 78.83 Kb LB mosfet.lb
IRF820/D IRF820/D IRF830/D IRF830/D IRF840/D IRF840/D IRF9630/D IRF9640/D IRF9640/D IRFD120/D IRFD120/D
/datasheets/files/motorola/design-n/lit/ldc_inv.htm
Motorola 25/11/1996 72.96 Kb HTM ldc_inv.htm