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Part Manufacturer Description Datasheet BUY
IRF9520SPBF Vishay Siliconix Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9520PBF Vishay Siliconix Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF9520STRRPBF Vishay Siliconix Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9520NPBF Infineon Technologies AG Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 visit Digikey Buy
IRF9520STRLPBF Vishay Siliconix Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF9520L Vishay Siliconix MOSFET P-CH 100V 6.8A TO-262 visit Digikey Buy

IRF9520 Samsung

Catalog Datasheet MFG & Type PDF Document Tags

1RF9620

Abstract: 1RF9622 1. 6 -2.5 T0-220 IRF9520 SAMSUNG P -100 0.6 -6 10-220 1RF9521 SAMSUNG , ) *typ (A) Vgs (V) Id (A) Vds (V) IRF9240 SAMSUNG P -200 ±20 -11 125 ±100 ±20 -250 -200 -2 -4 -0. 25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 TOâ'"3 IRFS241 SAMSUNG P -150 ±20 -11 125 ±100 ±20 -250 -150 -2 -4 -0.25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 T0-3 IR F 9 2 4 2 SAMSUNG P -200  , SAMSUNG P -150 ±20 -9.0 125 ±100 ±20 -250 -150 -2 -4 -0.2b 0.7 -10 -6 -9 -10 4 -6 1300 450 250 -25 T0
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IRF9243 IRF9510 IRF9513 IRF9522 IRF9532 IRF9612 1RF9620 1RF9622 1RF9540 IRF95I1 1RF9523

ZO 150

Abstract: 1rf9530 1. 6 -2.5 T0-220 IRF9520 SAMSUNG P -100 0.6 -6 10-220 1RF9521 SAMSUNG , 5 -2. 5 -10 0.8 -1. 5 250 100 35 -25 TQ-220AB IRF9520 IR P -100 ±20 -6.0 40 + 500 ±20 -250 -100 , ) Vgs (V) Id (A) Vds (V) IRF9240 SAMSUNG P -200 ±20 -11 125 ±100 ±20 -250 -200 -2 -4 -0. 25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 TOâ'"3 IRFS241 SAMSUNG P -150 ±20 -11 125 ±100 ±20 -250 -150 -2 -4 -0.25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 T0-3 IR F 9 2 4 2 SAMSUNG P -200 ±20 -9.0
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IRF843 IRF9130 IRF9131 IRF9132 IRF9140 IRF9142 ZO 150 1rf9530 IRF9141 IRF9512 IRF9523 Z5 18 1RF842 T0-220AB

1RFD110

Abstract: 1rf840 -220 IRF9520 SAMSUNG P -100 0.6 -6 10-220 1RF9521 SAMSUNG P -60 0.6 -6 , ) IRF9240 SAMSUNG P -200 ±20 -11 125 ±100 ±20 -250 -200 -2 -4 -0. 25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 TOâ'"3 IRFS241 SAMSUNG P -150 ±20 -11 125 ±100 ±20 -250 -150 -2 -4 -0.25 0. 5 -10 -6 -11 -10 4 -6 1300 450 250 -25 T0-3 IR F 9 2 4 2 SAMSUNG P -200 ±20 -9.0 125 ±100 ±20 -250 -200 -2 -4 -0.25 0. 7 -10 -6 -9 -10 4 -6 1300 450 250 -25 TOâ'"3 IRF9243 SAMSUNG P -150 ±20 -9.0 125 ±100 Â
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1RF640 IRF641 IRF720 IRF731 1RF740 IRF9613 1RFD110 1rf840 1RF741 1RF642 1RF643 RF722

1RF9540

Abstract: IRF9141 TOâ'"220 IRF9513 SAMSUNG P -60 1. 6 -2.5 T0-220 IRF9520 SAMSUNG P -100 , ) Id , 2 4 2 SAMSUNG P -200 ±20 -9.0 125 ±100 ±20 -250 -200 -2 -4 -0.25 0. 7 -10 -6 -9 -10 4 -6 1300 450 250 -25 TOâ'"3 IRF9243 SAMSUNG P -150 ±20 -9.0 125 ±100 ±20 -250 -150 -2 -4 -0.2b 0.7 -10 -6 -9
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IRF9540 IRF9541 IRF9620 IRF9621 IRF9622 irf9610 samsung 1RF9543 RF9610 IRF9530

IRF9120

Abstract: IRFP9120 IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 P r e l i m i n a r y , R0S(on) Id SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET , r n u u u v Part Num ber IRF/IRFP9120, IRF9520 - 1 0 0 V IRF/IRFP9121, IRF9521 -6 0 V o.eon 0 .6 0 0 0 .8 0 « 0 .8 0 , /9123 IRFP9120/91[21 /9 1 22/9123 IRF9520/9521/9522/9523 MAXIMUM RATINGS IRF/IRFP C haracteristic , temperature SAMSUNG SEMICONDUCTOR 401 P f | k ^ A I I I R R R F F F 9 P 9 1 9 5
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IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF9520/9521 D0054DE IRF/IRFP9122 IRF/IRFP9123 IRF9120/9121/9122/9123 IRF9520/9521/9522/9523

f9520

Abstract: IRF9520 Samsung SAMSUNG ELECTRONICS INC b4E » IRF9520/9521/9522/9523 Tj, JUNCTION TEMPERATURE (°C , SAMSUNG ELECTRONICS INC b4E D â  71134142 DP12S4Ã" 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Lower Rqs (o n , MAXIMUM RATINGS I Characteristic Symbol IRF9520 IRF9521 IRF9522 IRF9523 Unit , , RG= 2 5 fl, Starting T j= 2 5 ° C 213 ELECTRONICS SAMSUNG ELECTRONICS INC b4E D
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f9520 IRF9520 Samsung F9520 F9512 F9523 GPJ22S1

f9520

Abstract: GS 9521 «5 SAMSUNG Electronics 187 IRF9520/9521/9522/9523 ELECTRICAL CHARACTERISTICS Symbol C , Maximum Safe Operating Area SAMSUNG Electronics 189 IRF9520/9521 /9522/9523 P-CHANNEL POWER , IRF9520/9521/9522/9523 FEATURES · · · · · · · Lower R ds < on ) Improved Inductive ruggedness , 522/952 3 PRODUCT SUMMARY Part Number IRF9520 IRF9521 IR F9522 IRF9523 V ds -1 0 0 V -6 0 V -1 0 0 , seconds Symbol Vdss V ogr Vas Id Id I dm IRF9520 -1 0 0 -1 0 0 IRF9521 -6 0 -6 0 ±20 IRF9522
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GS 9521 ltsj 9521 IRF9S23 IRF9520-3

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF720 IRF9631 IRF9631 IRF9520 IRF9520 CROSS REFERENCE GUIDE SAMSUNG Direct Re placement IRF831 , POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 , IRF742 IRF743 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831 IRF832 IRF833 IRF840 IRF841 SAMSUNG Direct Replace ment IRF842 IRF843 IRF9510 IRF9511 IRF9512 IRF9513 IRF9520 IRF9521 IRF9522 IRF9523 IRF9530 IRF9531 , REFERENCE GUIDE SAMSUNG Direct Replace ment IRFP241 IRFP242 IRFP243 IRFP250 IRFP251 IRFP252 IRFP253 IRFP330
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IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF610 IRF611 IRF612 IRF613 IRF620 IRF621

IRF9120

Abstract: 1rf830 5 -2. 5 -10 0.8 -1. 5 250 100 35 -25 TQ-220AB IRF9520 IR P -100 ±20 -6.0 40 + 500 ±20 -250 -100 , ) 1RF822 SAMSUNG N 500 4 2. 2 TO-220 1RF823 SAMSUNG N 450 4 2. 2 TOâ'"220 1RF830 SAMSUNG N 500 1. 5 4. 5 TO-220 IRF831 SAMSUNG N 450 1. 5 4. 5 TO-220 IRF832 SAMSUNG N 500 2 4 TO-220 IRF833 SAMSUNG N 450 2 4 TO-220 IRF840 SAMSUNG N 500 0.85 8 TO-220 IRF841 SAMSUNG » 450
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IRF9221 IRF9122 1RF953 IRF9143 IRF9230 IRF9I33 RF9142 RF9220 1RF9222 IRF9223

IFRZ44

Abstract: IRFZ43 IRF833 IRF640 IRF841 IRF842 IRF843 IRF9510 IRF9511 IRF9512 IRF9513 IRF9520 IRF9521 IRF9522 IRF9523 , -220 USE IRF9510 USE IRF9510 USE IRF9510 IRF9520 IRF9521 IRF9522 IRF9523 FET, 100V, 0.6R, 6A, 40W, P-CH, T0-220 USE IRF9520 USE IRF9520 USE IRF9520 IRF9530 IRF9531 IRF9532 IRF9533 FET, 100V , 1-800-423-7364, o r write: Samsung Semiconductor, Inc., attention: Marketing Communications Dept. 3725 North
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IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403

1rf730

Abstract: IRF9120 5 -2. 5 -10 0.8 -1. 5 250 100 35 -25 TQ-220AB IRF9520 IR P -100 ±20 -6.0 40 + 500 ±20 -250 -100 , (S) Id (A) Vds (V) 1RF822 SAMSUNG N 500 4 2. 2 TO-220 1RF823 SAMSUNG N 450 4 2. 2 TOâ'"220 1RF830 SAMSUNG N 500 1. 5 4. 5 TO-220 IRF831 SAMSUNG N 450 1. 5 4. 5 TO-220 IRF832 SAMSUNG N 500 2 4 TO-220 IRF833 SAMSUNG N 450 2 4 TO-220 IRF840 SAMSUNG N 500 0.85 8 TO
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1rf730

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 Manufacturer IR IXYS Philips Samsung SGS Thompson , IRF840A IRF9510 IRF9520 IRF9530 IRF9610 IRF9620 IRF9Z14 IRF9Z24 IRF9Z34 IRFBC20 IRFBC30 IRFBC40
Motorola
Original
mosfet cross reference Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET MOSFET TOSHIBA 2SK SUP60NO6-18 2SJ334 2SJ380 2SJ402 2SJ412

IRF9310

Abstract: mosfet cross reference Manufacturer Toshiba Philips Siemens Sanyo Hitachi IR Motorola IXYS National Harris Siliconix Samsung SGS , IRF840A IRF9510 IRF9520 IRF9530 IRF9610 IRF9310 IRF9620 IRF9Z14 IRF9Z24 IRF9Z34 IRFBC20 IRFBC30 IRFBC40
ON Semiconductor
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IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution IRF510 substitution SG388/D CR108/D

YTA630

Abstract: MTW14P20 IR IR IR IR IR IR IR IR IR IR IR IR IR Samsung IR Harris Harris Harris IR ST Samsung ST IR IR IR Harris IR IR Harris Harris IR ST IR IR IR Samsung ST A:Nearest, B
Toshiba
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YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ401 2SJ407

equivalent data book of 10N60 mosfet

Abstract: MC14016CP IRF9513 IRF9520 IRF9521 IRF9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 IRF9540 IRF9541 IRF9542
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equivalent data book of 10N60 mosfet MC14016CP GD4511 CX 2859 SMD an-6466 74AC14 spice 1-800-4HARRIS FAX24-H 1-800-4-HARRIS

STK411-230E

Abstract: STK411-220E Hitachi Hitachi Hitachi Hitachi Hitachi Hitachi Hitachi Hitachi Hitachi Samsung Samsung Samsung IR IR IR , Samsung Samsung Samsung Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo
Dalbani Catalog
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STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 TLF14712F TLF14718F TLF14731F TLF14531FV TLF14731F1A TLF14731F3A

c5088 transistor

Abstract: transistor C3207 2N5397 IRF9531 IRFD9120 IRFD110 IRF630 2N5912 IRF150 IRF9520 IRF830 RCA9212A MP833
Hewlett-Packard
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c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A LM103-2 CA3026 CA3018 MPQ6842 CA3046 CA3045

0119 Solar Lamp Controller

Abstract: transistor SMD W06 78 SAMSUNG SEMICONDUCTOR SAM SANKEN ELECTRIC CO LTD SAK SANREX / SANSHA ELECTRIC MFG. CO. LTD. SAN SANYO
Rapid Electronics Catalog
Original
0119 Solar Lamp Controller transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A RASPBERRY PI 3 MODEL B KIT - BLACK - 16G 512MB A000066 50/60H 20-60VA