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IRF842 Datasheet

Part Manufacturer Description PDF Type
IRF842 Fairchild Semiconductor N-Channel Power MOSFETs, 8A, 450 V/500V Scan
IRF842 FCI POWER MOSFETs Scan
IRF842 Frederick Components Power MOSFET Selection Guide Scan
IRF842 General Electric Power Transistor Data Book 1985 Scan
IRF842 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF842 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRF842 International Rectifier N-Channel Power MOSFETs Scan
IRF842 International Rectifier TO-220 Plastic Package HEXFETs Scan
IRF842 International Rectifier TRANSISTORS N-CHANNEL Scan
IRF842 Motorola Switchmode Datasheet Scan
IRF842 Motorola European Master Selection Guide 1986 Scan
IRF842 Motorola N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Scan
IRF842 N/A Shortform Datasheet & Cross References Data Scan
IRF842 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF842 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF842 N/A Semiconductor Master Cross Reference Guide Scan
IRF842 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF842 N/A FET Data Book Scan
IRF842 National Semiconductor N-Channel Power MOSFETs Scan
IRF842 Siliconix MOSPOWER Design Data Book 1983 Scan
Showing first 20 results.

IRF842

Catalog Datasheet MFG & Type PDF Document Tags

irf840

Abstract: IRF841 iH A R R is SM 0 DC0 E ICNUTR IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 , -220AB IRF841 IRF842 TO -220AB IRF842 IRF843 TO-22QAB IRF843 NOTE: W hen ordering , Procedures. C opyright © Harris C orporation 1998 . File Number 2312.2 IRF840, IRF841, IRF842, IRF843 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF840 IRF841 IRF842 , IRF840, IRF842 500 - - V IRF841, IRF843 450 - - V 2.0 - 4.0 V V
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OCR Scan
TA17425 TB334 RF842

IRF840

Abstract: IRF843 IRF840, IRF841, IRF842, IRF843 S E M I C O N D U C T O R 7A and 8A, 450V and 500V, 0.85 and , . Symbol D BRAND IRF840 TO-220AB IRF840 IRF841 TO-220AB IRF841 IRF842 TO-220AB IRF842 IRF843 TO-220AB IRF843 G S NOTE: When ordering, include the entire part number , © Harris Corporation 1998 5-1 File Number 2312.2 IRF840, IRF841, IRF842, IRF843 Absolute , . . . . . . . . .Tpkg IRF841 IRF842 IRF843 UNITS 500 500 8.0 5.1 32 ±20 125
Harris Semiconductor
Original
IRF840 HARRIS irf840 power supply IRF840 MOSFET IRF842 V

IRF840

Abstract: irf840 power supply Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 Power MOS Field-Effect Transistors , , IRF841, IRF842, and IRF843 are n-channel enhancement-mode silicon-gate power field-effect transistors , DESIGNATION 92CS-3932B JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF840 IRF841 IRF842 IRF843 Units , (0.063 in. (1.6mm) from case for 10s) °C .3-204 Standard Power MOSFETs- IRF840, IRF841, IRF842 , . Max. Units Test Conditions BVqss Drain - Source Breakdown Voltage IRF840 IRF842 500 - - V VGS = OV
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OCR Scan
55TT Application of irf840 irf84 mosfet 3205 IRF342 IRF840 N IRF84

DIODE cd c318

Abstract: Application of irf840 . Product Summary Part Number Vds RDS(on) 'd irf840 500v 0.85(2 8.0a irf841 450v 0.85« 8.0a irf842 500v , , ie. 2A3B C-317 HE 0 | MÃ"SS452 DODflSb^ M IRF840, IRFa41, IRF842, IRF843 Devices T-39-13 INTERNATIONAL RECTIFIER Absolute Maximum Ratings Parameter IRF840, IRF841 IRF842, IRF843 Units ID ® TC = 25 , . Max. Units Test Conditions BVdss Drain-to-Source Breakdown Volt:;go IRF840 IRF842 500 - - V VQS = 0V , IRF841 - 0.70 0.86 Q VQS = 10V, lD = 4.4A IRF842 IRF843 - 0.85 1.1 'D(on) On-State Drain Current Â
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OCR Scan
DIODE cd c318 inverter irf840 K 2611 MOSFET IRF840 application Switching Application of irf840 C322 diode C-323 C-324

IRF840

Abstract: high voltage pulse with irf840 IRF841 IRF842 IRF843 V ds 500V 450V 500V 450V RoS(on) 0 .8 5 ÎÎ 0 .8 5 0 1.10Í1 Id 8.0A 8.0A 7.0A 7.0A , =1 Gate-Source Voltage Symbol Vdss IRF840 IRF841 IRF842 IRF843 Unit Vdc Vdc Vdc 0Mil)(1 ) V dgr Vgs Id Id , Drain-Source Breakdown Voltage IR F840/IRF842 IR F841/IRF843 Vgs(i(i ) Igss Igss bss Gate Threshold Voltage , Current (2) IRF840/IRF841 IRF842/IRF843 Static Drain-Source On-State Resistance (2) IRF840/IRF841 IRF842 , ) IRF840/IRF841 IRF842/IRF843 Pulse Source Current(Body Diode)(3) IRF840/IRF841 IRF842/IRF843 Diode Forward
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OCR Scan
high voltage pulse with irf840 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 MOSFETs IRF840 n-channel mosfet IRF840/841/842/843

TRANSISTOR mosfet IRF840

Abstract: IRF840 IRF842 IRF843 Part Number VDSS rDS(on) ID IRF840 500 V 0.85(1 8.0 A IRF841 450 V 0.85« 8.0 A IRF842 , Voltage (Vqs = 0. ID = 0.25 mA) IRF841, IRF843 IRF840, IRF842 V(BR)DSS 450 500 - Vdc Zero Gate Voltage , , l0 = 4.0 Adc) IRF840, IRF841 IRF842, IRF843 'DS(on) - 0.85 1.0 Ohm On-State Drain Current (Vqs = 10 V) (Vqs S= 6 8 Vdc) (VDS = 7.0 Vdc) IRF840, IRF841 IRF842, IRF843 'D(on) 8.0 7.0 - Adc Forward Transconductance (VDs 5 6.8 V. Id = 4.0 A) (Vds3=7.0V, Id = 4.0A) IRF840. IRF841 IRF842, IRF843 9FS 4.0 4.0 - mhos
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MTP8N45 TRANSISTOR mosfet IRF840 irf8408 3fc relay transistor irf840 damn D 843 Transistor

VN64GA

Abstract: TD4A 8.0 125 IRF840 500 1.10 7.0 125 IRF842 500 1.5 4.5 75 VN5001D 500 1.5 4.5 75 IRF830 500 2.0 , Siliconix 1-5 IRF440 - IRF441 â  IRF442 â  IRF443 IRF840 â  IRF841 â  IRF842 â  IRF843 Siliconix , IRF840 500V 0.85Q 8.0A IRF841 450V TQ-220AB IRF842 500V 1.10Q 7.OA IRF843 450V ABSOLUTE , ii VGS = 10V, lD = 4A(Note 1) IRF442, 443 IRF842, 843 1.00 1.10 Dynamic g)s Forward
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IRF450 VNP002A IRF820 IRF350 IRF740 IRF340 VN64GA TD4A 1RF720 VN5001D/IRF830 VN5001A/IRF430

IRF440

Abstract: IRF450 IRF840 â  IRF841 â  IRF842 â  IRF843 Siliconix 500V N-Channel Enhancement Mode MOSPOWER Advanced , -3 IRF442 500V 1.100 7.OA IRF443 450V IRF840 500V 0.85Q 8.0A IRF841 450V TQ-220AB IRF842 500V , ii VGS = 10V, lD = 4A(Note 1) IRF442, 443 IRF842, 843 1.00 1.10 Dynamic g)s Forward
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OCR Scan
irf420 VN4000D/IRF730 VNM001A IRF720 VN4000A/IRF330 IRF250 IRF640

D 843 Transistor

Abstract: TRANSISTOR 841 ^7#TM 0 M »IIU iraM O (g S rZ7 SGS-THOMSON IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI V DSS ^D S(on) 8 A 4.5 A 8 A 4.5 A 7 A 4 A 7 4 A A 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V 0.85 fi 0.85 fi 0.85 fi 0.85 0 1.1 fi 1.1 0 1.1 1.1 fi fi · HIGH VOLTAGE , FI for IRF842/843/842FI/843FI VGS= 10 V lD= 4.4 A for IRF840/841/840FI/841FI for IRF842/843/842FI
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840FI TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor VOLTAGE-450 100KHZ T0-220 ISOWATT22Q 842FI

VN64GA

Abstract: VN1001A VN35AA 500 0.85 8.0 125 IRF840 500 1.10 7.0 125 IRF842 500 1.5 4.5 75 VN5001D 500 1.5 4.5 75 , 1.4 20 VN2406D Siliconix 1-5 IRF440 - IRF441 â  IRF442 â  IRF443 IRF840 â  IRF841 â  IRF842 â , IRF840 500V 0.85Q 8.0A IRF841 450V TQ-220AB IRF842 500V 1.10Q 7.OA IRF843 450V ABSOLUTE , ii VGS = 10V, lD = 4A(Note 1) IRF442, 443 IRF842, 843 1.00 1.10 Dynamic g)s Forward
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OCR Scan
IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A

D 843 Transistor

Abstract: irf 840 IRF842 500 V 1.1 Ã 7 A IRF842FI 500 V 1.1 Ã 4 A IRF843 450 V 1.1 Ã 7 A IRF843FI 450 V 1.1 Ã 4 A â , (on) max ^GS = 10 V for IRF840/841 /840FI/841 Fl for IRF842/843/842FI/843FI 8 7 A A Rds (on) Static drain-source on resistance VGS=10V lD= 4.4 A for IRF840/841/840FI/841FI for IRF842/843/842FI/843FI 0.85 1.1 Ã
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OCR Scan
sgs 841 IRF 80A irf z 44 st thomson tv transistor IRF 450 Diode 400V 5A 840/FI-841 ISOWATT220 843FI

equivalent irf840

Abstract: 2SK173 -220 IRF822 500 4.0 BUZ 41 500 1.1 TO-220 IRF842 500 1.1 BUZ 43 500 4.5 TO-3 IRF422 500 4.0 BUZ 44 500 1.1 , 8.0 125 IRF840 500 1.10 7.0 125 IRF842 500 1.5 4.5 75 VN5001D 500 1.5 4.5 75 IRF830 500 2.0 , Siliconix 1i31 IRF440 - IRF441 â  IRF442 â  IRF443 IRF840 â  IRF841 â  IRF842 â  IRF843 Siliconix , IRF840 500V 0.85Q 8.0A IRF841 450V TQ-220AB IRF842 500V 1.10Q 7.OA IRF843 450V ABSOLUTE , ii VGS = 10V, lD = 4A(Note 1) IRF442, 443 IRF842, 843 1.00 1.10 Dynamic g)s Forward
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OCR Scan
IRF522 IRF540 IRF632 IRF232 IRF240 2SK173 equivalent irf840 2N6658 BUZ 840 BUZ44 vn0106n1 VN1000D

ir 441 c

Abstract: 443 DIODE Part Number V ds R d S ( o ii ) % Id IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842 , IRFP440 IRF440 500 500 IRF841 IRFP441 IRF441 450 450 IRF842 IRFP442 IRF442 500 500 IRF843 IRFP443 IRF443 , ) IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442 IRF843/IRFP443/IRF443 Pulse Source Current(Body Diode)(3) IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442 IRF843/IRFP443/IRF443 Diode Forward Voltage (2) IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442
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OCR Scan
ir 441 c 443 DIODE f441 ic F441 IRF44 F841 IRFP440/441/442/443 IRF440/441 IRF842/IRFP442/IRF442

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE Replace ment IRF842 IRF843 IRF9510 IRF9511 IRF9512 IRF9513 IRF9520 IRF9521 IRF9522 IRF9523 IRF9530 IRF9531 , IRF840 IRF841 Inter national Rectifier IRF842 IRF843 IRF9510 IR F9511 IRF9512 IRF9513 IRF9520 IRF9521 , IRFP150 IRFP252 IRFP352 IRFP452 IRFP252 IRFP352 IRFP452 IRFP440 IRFP440 IRF822 IRF842 IRF830 IRF831 IRF832 , IRF522 IRF522 IRF633 IRF610 IRF610 IRF612 IRF541 IRF540 IRF641 IRF642 IRF741 IRF741 IRF740 IRF842 IRF611
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OCR Scan
IRF9612 IRF9613 IRFP333 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

RF840

Abstract: IRF840 Harris 450 8.0 5.1 32 ±20 125 1.0 32 510 -55 to +150 300 IRF842 IRF842R 500 500 7.0 4.4 28 ±20 125 1.0 28 , On-State Drain Current (Note 2) IRF840/841, IRF840R/841R IRF842/843, IRF842R/843R Static Drain-Source On-State Resistance (Note 2) IRF840/841, IRF840R/841R IRF842/843,1RF842R/843R Forward Transconductance , Input Impedance Description The IRF840, IRF841, IRF842, and IRF843 are n-channel enhancement-mode sillcon-gate power field-effect transis tors. IRF840R, IRF841R, IRF842R and IRF843R types are advanced power
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OCR Scan
RF840 ODS40 IRF840R/841R/Q42R/843R T0-220AB 0QS407

2sk135 equivalent

Abstract: 2SK134 equivalent IRF840 â  IRF841 â  IRF842 â  IRF843 Siliconix 500V N-Channel Enhancement Mode MOSPOWER Advanced , -3 IRF442 500V 1.100 7.OA IRF443 450V IRF840 500V 0.85Q 8.0A IRF841 450V TQ-220AB IRF842 500V , ii VGS = 10V, lD = 4A(Note 1) IRF442, 443 IRF842, 843 1.00 1.10 Dynamic g)s Forward
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OCR Scan
HPWR-6502 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent 2SK134 equivalent IRF223 PWR-6501

IRF842

Abstract: IRF843 IRF842,843 7 AMPERES 500, 450 VOLTS RDS(ON) s 1.1 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tq= 25°C) (unless otherwise specified) RATING SYMBOL IRF842 IRF843 UNITS , characteristics Drain-Source Breakdown Voltage IRF842 (VQS = OV, lD = 250 //A) IRF843 BVDSS 500 450 â'" â
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OCR Scan

D 843 Transistor

Abstract: 843FI e rZ Z * ·1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI V DSS R d S(od ) 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V 0.85 n 0.85 , IRF842/843/842FI/843FI R DS (on) Static drain-source on resistance VGS= 10 V lD= 4 .4 A for IRF840/841/840FI/841 FI for IRF842/843/842FI/843FI 0.85 1.1 ß a DYNAMIC 9fS * ^ is s ^o ss
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OCR Scan
843FI e IRF 100A SC 63 840 irf 44 ns ISOWATT22

irf830

Abstract: IRF840 POWER MOSFETs TO-220 N-CHANNEL B Vdss (V) 450.00 (Continued) FUNCTION GUIDE ID(onXA) 2.20 2.50 4.00 4.50 7.00 8.00 2.20 2.50 4.00 4.50 7.00 8.00 RDS
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OCR Scan
ssp3n70a P4N70 3N70 SSP4N70A SSP6N60 IRF823 IRF821 IRF833 SSP6N55 SSP4N60 P4N70A

IRF722P

Abstract: IRF732P IRF841P IRF842 IRF842FI IRF842P IRF843 IRF843FI IRF843P IRFP140 IRFP140FI IRFP140P IRFP150 IRFP150FI , IRF841FI IRF842 IRF842FI IRF842FI IRF843 IRF843FI IRF843FI IRFP140 IRFP140FI IRFP140FI IRFP150 IRFP150FI , MTP3055A IRF843 IRF842 IRF841 IRF840 IRFP453 IRFP452 IRFP450 SGSP474 SGSP479 BUZ72A MTP3055A SGSP381
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OCR Scan
2SK350 IRF722FI IRF540FI BUZ71 SGSP3055 STLT20FI IRF722P IRF732P IRF730P SGSP312 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312

Diode LT 442

Abstract: Diode LT 443 IRF840 IRFP440 500 500 IRF841 IRFP441 450 450 ±20 IRF842 IRFP442 500 500 IRF843 IRFP443 450 450
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OCR Scan
Diode LT 442 Diode LT 443
Abstract: 450V 1 .1 0 0 7.0A MAXIM UM RATINGS Symbol IRF840 IRFP440 IRF841 IRFP441 IRF842 -
OCR Scan
IRFP440/441 D017323 IRF840/8411842/843

f840

Abstract: IRF842R · SOURCE · DRAIN · GATE D escription The IRF840, IRF841, IRF842, and IRF843 are n-channel , 5 to + 150 300 IRF842 IRF842R 500 500 7.0 4.4 28 ±20 125 1.0 28 510 -5 5 t o + 150 300 IRF843
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OCR Scan
f840 F840/841/8 IRF840R/841R/842R/843R
Showing first 20 results.