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IRF740STRRPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF740ASTRLPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF740LCPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF740SPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF740APBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF740ASTRRPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy

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IRF740 Datasheet

Part Manufacturer Description PDF Type
IRF740 Harris Semiconductor Power MOSFET Selection Guide Original
IRF740 International Rectifier 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original
IRF740 Intersil 10A, 400V, 0.550 ?, N-Channel Power MOSFET Original
IRF740 STMicroelectronics TRANS MOSFET N-CH 400V 10A 3TO-220 Original
IRF740 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
IRF740 STMicroelectronics N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH MOSFET Original
IRF740 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220 Original
IRF740 Toshiba Power MOSFETs Cross Reference Guide Original
IRF740 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original
IRF740 Fairchild Semiconductor Advanced Power MOSFET Scan
IRF740 Fairchild Semiconductor N-Channel Power MOSFETs, 10A, 350V/400V Scan
IRF740 FCI POWER MOSFETs Scan
IRF740 Frederick Components Power MOSFET Selection Guide Scan
IRF740 General Electric Power Transistor Data Book 1985 Scan
IRF740 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF740 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRF740 International Rectifier N-Channel Power MOSFETs Scan
IRF740 International Rectifier HEXFET Power MOSFET Scan
IRF740 International Rectifier HEXFET Power MOSFET Scan
IRF740 International Rectifier HEXFET Power Mosfet Scan
Showing first 20 results.

IRF740

Catalog Datasheet MFG & Type PDF Document Tags

IRF740

Abstract: IRF740FI IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE s s s s V DSS R DS( on) ID 400 V 400 V IRF740 IRF740FI < 0.55 < 0.55 10 A 5.5 A TYPICAL , Symbol Parameter Value Unit IRF740 IRF740FI Drain-source Voltage (V GS = 0) 400 , limited by safe operating area November 1996 1/10 IRF740/FI THERMAL DATA TO-220 R thj-cas e , 120 pF pF pF IRF740/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD
STMicroelectronics
Original
ISOWATT220 IRF740/FI P011G

irf740

Abstract: power MOSFET IRF740 application Order codes Part number IRF740 Marking IRF740@ Package TO-220 Packaging Tube August 2006 Rev 4 1/12 www.st.com 12 Contents IRF740 Contents 1 2 Electrical ratings . . . . . . . , IRF740 N-channel 400V - 0.46 - 10A TO-220 PowerMESHTM II Power MOSFET General features Type IRF740 VDSS (@Tjmax) 400V RDS(on) , . . . . 11 2/12 IRF740 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS
STMicroelectronics
Original
power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A

irf740

Abstract: irf740 mosfet RthJC RthCS RthJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF740-3 , IRF740/741/742/743 FEATURES · · · · · · · Lower Ros (ON) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF740 , Eas Ias Pd Tj , Tstg Tl 10 6.3 40 10 6.3 40 ± 1 .5 520 10 125 1.0 - 5 5 to 150 300 IRF740 400 400 , sR SAMSUNG Electronics 162 IRF740/741/742/743 ELECTRICAL CHARACTERISTICS Symbol BVdss
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OCR Scan
IRF740 ir irf741 F7403 IRF740/741/742/743 IRF741 IRF742 IRF743 IRF740/IRF742 F740-3

mosfet 1RF740

Abstract: 1rf740 -â'"-Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS , IRF740, IRF741, IRF742, and IRF743 are n-channel enhancement-mode silicon-gate power field-effect , DESIGNATION 92CS-39528 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF740 IRF741 IRF742 IRF743 Units , (0.063 in. (1.6mm) from case for 10s) °c ,3-189 Standard Power MOSFETs â  IRF740, IRF741, IRF742 , . Units Test Conditions ®^DSS Drain - Source Breakdown Voltage IRF740 IRF742 400 - - V VQS - lD » 250
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OCR Scan
mosfet 1RF740 1rf740 9ZCS-33741 IRF74

IRF740

Abstract: IRF740FI ¿57 SGS-THOMSON IRF740 IRF740FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss RDS(on) Id IRF740 IRF740FI 400 V 400 V < 0.55 a < 0.55 a 10 A 5.5 A . TYPICAL RDS(on) = 0.42 Q. . , Symbol Parameter Value Unit IRF740 IRF740FI Vos Drain-source Voltage (Vgs = 0) 400 400 V Vdgr , Junction Temperature 150 °c (â'¢) Pulse width limited by safe operating area November 1996 1/10 IRF740 , PF PF PF 2/10 /w SGS-THOMSON 6siieR®iiLii£irR®(iaies IRF740/FI ELECTRICAL CHARACTERISTICS
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OCR Scan
ISOWATT22Q

IRF740

Abstract: irf740n ® IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESHTM MOSFET TYPE IRF740 s s s s s , Datasheet October 1998 1/8 IRF740 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal , Min. 5.8 1400 220 27 Typ. Max. Unit S pF pF pF 2/8 IRF740 ELECTRICAL CHARACTERISTICS , safe operating area Safe Operating Area Thermal Impedance 3/8 IRF740 Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 IRF740 Normalized Gate Threshold
STMicroelectronics
Original
irf740n MOSFET IRF740 P011C

IRF740

Abstract: INTERNATIONAL. RECTIFIER lO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74à , , ease of paralleling and temperature stability of the electrical parameters. bvdss IRF740 The , that begin with a digit, ie. 2A3B C-293 0839 (0037) 0686 (0027) IRF740, IRF741, IRF742 , Maximum Ratings IRF740, IRF741 IRF742, IRF743 Units Jq @ T c â' 25°C Continuous Drain , Min. 350 IRF740 IRF741 Test Conditions 400 IRF742 IRF743 Drain-to*Source Breakdown
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OCR Scan
SS452 T0-220AB C-297 C-298 T-39-13 C-299

gate drive circuit for power MOSFET IRF740

Abstract: irf740 h a r r is SEM IC0NDUCT0R July 1998 IRF740, IRF741, IRF742, IRF743 8A and 10A, 350V and 400V , Surface Mount Components to PC Boards" Symbol Ordering Information PART NUM BER IRF740D IRF741 IRF742 IRF743 PACKAGE TO -220AB TO -220AB TO -220AB TO-22QAB BRAND IRF740 IRF741 IRF742 IRF743 NOTE: W hen , Handling Procedures. C opyright © Harris C orporation 1998 . File Number 2311.2 IRF740, IRF741, IRF742, IRF743 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF740 Drain to Source
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OCR Scan
gate drive circuit for power MOSFET IRF740 irf740 STAND FOR TA17424 TB334 RF742 RF743

F741

Abstract: rf74 developmental type TA17424. Symbol PART NUMBER PACKAGE BRAND IRF740D TO-220AB IRF740 IRF741 TO-220AB IRF741 , SEMICONDUCTOR July 1998 IRF740, IRF741, IRF742, IRF743 8A and 10A, 350V and 400V, 0.55 and , 2311.2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF740, IRF741, IRF742, IRF743 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified IRF740 IRF741 IRF742 IRF743 UNITS Drain , IRF740, IRF742 BVdss VGS = 0V, lD = 250nA (Figure 10) 400 - - V IRF741, IRF743 350 - - V Gate to
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OCR Scan
F741 rf74 gate driver circuit IRF741 R742 Transistor IRF743 IRF743 harris

IRF740

Abstract: IRF740FI IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI s s , Symbol Parameter Value Unit IRF740 IRF740FI Drain-source Voltage (V GS = 0) 400 , limited by safe operating area April 1993 1/10 IRF740/FI THERMAL DATA TO-220 R thj-cas e , 120 pF pF pF IRF740/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD , ISOWATT220 3/10 IRF740/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220
STMicroelectronics
Original
transistor equivalent irf740 irf740 DATA SHEET

IRF740

Abstract: diode lt 341 Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF740-3 1.0 0.5 80 , IRFP340-3 1.0 , IRF740/741/742/743 IRFP340/341/342/343 FEATURES · · · · · · · Lower Rds (ON) Improved inductive , IRF740 IRFP340 400 400 10 6.3 40 IRF741 IRFP341 350 350 ±20 10 6.3 40 IRF742 IRFP342 400 400 8.3 , °C 184 ELECTRONICS IRF740/741/742/743 IRFP340/341Z342/343 ELECTRICAL CHARACTERISTICS Symbol , Static Drain-Source On-State Resistance (2) IRF740/IRFP340 IRF741/IRFP341 IRF742/IRFP342 IRF743/IRFP343
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OCR Scan
diode lt 341 LT 741 S tl 741 40/IRFP34 IRF741-IRFP341 IRFP343 IRF740/741Z742/743

IRF740

Abstract: irf740 mosfet IRF740 ® N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 400 V IRF740 < 0.55 10 A TYPICAL RDS(on) = 0.48 , or K Identifies Silicon Characterized in this Datasheet October 1998 1/8 IRF740 THERMAL , Max. Unit S 1400 220 27 pF pF pF IRF740 ELECTRICAL CHARACTERISTICS (continued , Operating Area Thermal Impedance 3/8 IRF740 Output Characteristics Transfer Characteristics
STMicroelectronics
Original

IRF740

Abstract: N-CHANNEL 400V - 0.46 - 10A TO-220 PowerMESHTMII MOSFET TYPE IRF740 s s s s s IRF740 VDSS , ) Pulse width limited by safe operating area June 2002 1/8 IRF740 THERMAL DATA Rthj-case , A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 7 1259 206 25.6 Max. Unit S pF pF pF 2/8 IRF740 , width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 IRF740 , Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 IRF740 Normalized Gate
STMicroelectronics
Original
Abstract: Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF740, SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix
Original
HF740 2002/95/EC IRF740P HF740-E3 2011/65/EU
Abstract: RESISTANCE Symbol IRF740-3 Characteristic IRFP340-3 Unit Rttvjc Junction-to-Case MAX , IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÃ , RATINGS Characteristics Symbol IRF740 IRFP340 IRF741 IRFP341 IRF742 IRFP342 IRF743 , IRF740/741 /742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , - V IRF741 /IRFP341 IRF743/IRFP343 BVoss Drain-Source Breakdown Voltage IRF740/IRFP340 -
OCR Scan
F740/IRFP340 F742/IRFP342 F743/IRFP343 IRF740/741 GD1731Q

irf740

Abstract: irf740 mosfet IRF740 N-CHANNEL 400V - 0.46 - 10A TO-220 PowerMESHTMII MOSFET TYPE IRF740 s s s s s , safe operating area Note: NEW DATASHEET ACCORDING TO PCN DSG/CT/2C14. SPECIAL MARKING: IRF740 @ April 2003 (1)ISD 10A, di/dt 120A/µs, VDD V(BR)DSS, Tj TJMAX. 1/8 IRF740 THERMAL DATA , Capacitance Reverse Transfer Capacitance 25.6 pF IRF740 ELECTRICAL CHARACTERISTICS (CONTINUED , Operating Area Thermal Impedence 3/8 IRF740 Output Characteristics Transfer Characteristics
STMicroelectronics
Original
53A2

IRF7405

Abstract: irf740 Packaging IRF740 IRF740@ TO-220 Tube August 2006 Rev 4 1/12 www.st.com 12 Contents IRF740 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . , IRF740 N-channel 400V - 0.46 - 10A TO-220 PowerMESHTM II Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID IRF740 400V , ( IRF740 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol
STMicroelectronics
Original
IRF7405 TO-220 JESD97 DATASHEET IRF740
Abstract:   Switching application Part number Marking Package Packaging IRF740 IRF740@ TO-220 Tube August 2006 Rev 4 1/12 www.st.com 12 Contents IRF740 Contents 1 , IRF740 N-channel 400V - 0.46â"¦ - 10A TO-220 PowerMESHâ"¢ II Power MOSFET General features VDSS , O let so b codes O Order IRF740 400V , . . . . . . . 11 2/12 IRF740 1 Electrical ratings Electrical ratings Table 1 STMicroelectronics
Original

transistor IRF740

Abstract: irf740 mosfet IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel , . Ordering Information IRF740 PACKAGE TO-220AB 2311.3 Features · 10A, 400V · rDS(ON) = 0.550 · , File Number BRAND Symbol D IRF740 NOTE: When ordering, include the entire part number. G , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF740 Absolute Maximum Ratings TC , . . . . . . Tpkg IRF740 400 400 10 6.3 40 ±20 125 1.0 520 -55 to 150 UNITS V V A
Intersil
Original
transistor IRF740 ISO9000

power MOSFET IRF740

Abstract: IRF740 Data Sheet July 1999 File Number 2311.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET , PC Boards" Ordering Information PART NUMBER IRF740 PACKAGE TO-220AB BRAND IRF740 Symbol D , SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation IRF740 Rev. A IRF740 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF740 400 400 10 6.3 40 ±20 125 , - - 1.0 62.5 oC/W oC/W ©2001 Fairchild Semiconductor Corporation IRF740 Rev. A
Fairchild Semiconductor
Original

RF74

Abstract: C5307 S G S -T H O M S O N * 5 7 i r f ?40 !LiOT®iQ(£I IR F 740 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS(on) Id IRF740 IRF740FI 400 V 400 V < 0.55 £ 2 < 0.55 a 10 A 5.5 A . . > . TYPICAL R DS(on) = 0.42 G AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLI CATI ONS HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL
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OCR Scan
C5307 RF740

OF IC 741

Abstract: internal circuit diagram of IC 741 Æ 7 SGS-THOMSON * 7 #» («©»lllLICTW SSÖtEi IRF 740/FI-741/FI IRF 742/FI-743/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI , current (VDS = 0) lD= 2 5 0 ^A VGS= 0 for IRF740/742/740FI/742FI for IRF741/743/741FI/743FI VDS = Max , IRF740/741 /740FI/741 FI for IRF742/743/742FI/743FI R o S (on) Static drain-source on resistance VGS= 1 0 V lD= 5.2 A for IRF740/741/740FI/741 FI for IRF742/743/742FI/743FI 0.55 0.8 a a
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OCR Scan
740FI OF IC 741 internal circuit diagram of IC 741 internal structure of ic 741 internal diagram of 741 IC 741 IC circuit diagram ic 741 application T0-220 ISOWATT22 743FI

irf 740

Abstract: IRF 740 N rZ 7 S G S -T H O M S O N [M D(g[S(9)[i[L[l(gT»RilD(gi IRF 740/FI-741/FI IRF 742/FI-743/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 , ) Gate-body leakage current (VDS = 0) lD = 250 fiA VGS = 0 for IRF740/742/740FI/742FI for IRF741/743/741FI , 2 5 0 /¿A 2 10 8.3 4 V A A VdS> ' d (on) x RDS(on) max V GS= 1 0 V for IRF740/741/740FI/741FI for IRF742/743/742FI/743FI VGS= 10 V lD= 5 .2 A for IRF740/741 /740FI/741 FI for IRF742/743/742FI
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OCR Scan
irf 740 IRF 740 N IRF 324 transistor IRF 740 diode 742 742FI ISQWATT220
Abstract: IRF740, SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix
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