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IRF7306TRPBF Infineon Technologies AG 3A, 30V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET visit Digikey Buy
IRF7309PBF Infineon Technologies AG Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 visit Digikey Buy
IRF7306PBF Infineon Technologies AG Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 visit Digikey Buy
IRF7304PBF Infineon Technologies AG Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 visit Digikey Buy
IRF7301PBF Infineon Technologies AG Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 visit Digikey Buy
IRF7303TRPBF Infineon Technologies AG Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 visit Digikey Buy

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Part : IRF7304PBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 99 Best Price : $0.39 Price Each : $1.1760
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Part : IRF7301PBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 1,460 Best Price : $0.3310 Price Each : $0.3938
Part : IRF7303TRPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 4,000 Best Price : $0.3625 Price Each : $0.3625
Part : IRF7304PBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 1,168 Best Price : $0.3750 Price Each : $0.4375
Part : IRF7304TR Supplier : International Rectifier Manufacturer : New Advantage Stock : 72,000 Best Price : - Price Each : -
Part : IRF7304TRPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 4,000 Best Price : $0.4188 Price Each : $0.4188
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IRF730 Datasheet

Part Manufacturer Description PDF Type
IRF730 Harris Semiconductor Power MOSFET Selection Guide Original
IRF730 Intersil 5.5A, 400V, 1.000 ?, N-Channel Power MOSFET Original
IRF730 Philips Semiconductors PowerMOS transistor Avalanche energy rated Original
IRF730 STMicroelectronics N-CHANNEL 400V - 0.75 ? - 5.5A - TO-220 POWERME Original
IRF730 STMicroelectronics N-channel power MOSFET, 5.5 A, 400V. Original
IRF730 STMicroelectronics N - CHANNEL 400V - 0.75 W - 5.5A - TO-220 PowerMESH MOSFET Original
IRF730 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220 Original
IRF730 Toshiba Power MOSFETs Cross Reference Guide Original
IRF730 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220AB Original
IRF730 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan
IRF730 Fairchild Semiconductor Advanced Power MOSFET Scan
IRF730 FCI POWER MOSFETs Scan
IRF730 Frederick Components Power MOSFET Selection Guide Scan
IRF730 General Electric Power Transistor Data Book 1985 Scan
IRF730 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan
IRF730 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF730 International Rectifier N-Channel Power MOSFETs Scan
IRF730 International Rectifier HEXFET Power MOSFET Scan
IRF730 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRF730 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 5.5A, Pkg Style TO-220AB Scan
Showing first 20 results.

IRF730

Catalog Datasheet MFG & Type PDF Document Tags

irf730

Abstract: IRF N-Channel Power MOSFETs Junction-to-Ambient MAX TYP MAX IRF730-3 1.67 0.5 0 80 IRFP330-3 1.67 0.2 4 40 Unit K/W K/W K/W Mounting surface flat , IRF730/731/732/733 IRFP330/331/332/333 FEATURES · · · · · · · Lower Rds (on) Improved inductive , Part Number IRF730/IRFP330 IR F731. IRFP331 IRF732. IRF H332 IRF733/IRFP333 V ds 400V 350V 400V j 350V , .5 75 0 .6 - 5 5 to 150 300 IRF730 IRFP330 40 0 40 0 IRF731 IRFP331 350 350 ±20 4.5 3.0 18 4.5 3 .0 , 0 V , RG= 2 5 n , Starting T j= 2 5 ° C 178 ELECTRONICS IRF730/731/732/733 IRFP330/331Z332
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OCR Scan
IRF733 IRF N-Channel Power MOSFETs irf730 mosfet IRF731 DIODE IRF730/731/732/733 IRF730/IRFP330 IRFP330/331 IRFP332 IRFP333

IRF730

Abstract: IRF731 N-CHANNEL IRF730 IRF731 IRF732 IRF733 400 Volt, 1.0 Ohm HEXFET TO-220AB Plastic Package The HEXFET , , choppers, audio amplifiers and high energy pulse circuits. Product Summary Part Number IRF730 IRF731 , digit, ie. 2A3B C -285 HE D I 4055455 0000537 e IRF730, IRF731, IRF732, IRF733 , Factor VGS eAS 1AR E ar dv/dt Tj tstg RECTIFIER INTERNATIONAL IRF730, IRF731 5.5 3.5 20 74 . , specified) Parameter BVqss- Drain-to-Source Breakdown Voltage Type IRF730 IRF732 IRF731 IRF733 RDS(on
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OCR Scan
K 3911 K 3911 mosfet T-39-11 C-291 C-292

IRF730

Abstract: IRF731 h a f r r is November 1997 IRF730, IRF731, IRF732, IRF733 4.5A and 5.5A, 350V and 400V, 1.0 , Components to PC Boards" Symboi Ordering Information PART NUMBER IRF730 IRF731 IRF732 IRF733 PACKAGE T 0-2 2 0 A B T 0-2 2 0 A B T 0-2 2 0 A B TO-22QAB BRAND IRF730 IRF731 IRF732 IRF733 NOTE: When , Corporation 1997 , O" I p j|e N u m b e r 1580 2 IRF730, IRF731, IRF732, IRF733 Absolute Maximum Ratings T c = 25°G, Unless o th e rw ise Specified IRF730 Drain to Source Voltage (Note 1
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OCR Scan
TA17414 irf730 harris TB334 RF732 RF733

RF730

Abstract: IRF733  Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Power MOS Field-Effect Transistors ,   Majority carrier device TERMINAL DIAGRAM The IRF730, IRF731, IRF732 and IRF733 are n-channel , . (1.6mm) from case for 10s) °C 3-184, -Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 , Conditions BVqss Drain - Source Breakdown Voltage IRF730 IRF732 400 _ - V VGS = OV ld = 250fiA IRF731 , V0S = Max. Rating * 0.8, VGS = OV. Tc = 125°C 'D(on) On-State Drain Current © IRF730 IRF731 5.5 -
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OCR Scan
ISF730 JBF731 RF730 92CS-39328 JRF732

IRF730

Abstract: F7303 MAX IRF730-3 1.67 0 .5 0 80 Unit K/W K/W K/W Mounting surface flat, smooth, and greased Free Air , IRF730/731/732/733 FEATURES · · · · · · · Lower Rds < on> Improved inductive ruggedness Fast , 3 .5 32 IRF730 400 400 IRF731 350 350 + 20 IRF732 400 400 IRF733 350 350 Vdc Vdc , IRF730/731/732/733 ELECTRICAL CHARACTERISTICS Symbol Characteristic Drain-Source Breakdown Voltage IRF730/IRF732 IRF731 /IRF733 VGS(th) Igss Igss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless
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OCR Scan
F7303 IR 733 IR 732 p 10OA/ F730-3

IRF730

Abstract: 733 331 - nC THERMAL RESISTANCE Symbol Characteristic IRF730-3 IRFP330-3 Unit HthJC Junction-to-Case , SAMSUNG ELECTRONICS INC b?E » â  7^bmM2 00172^ 523 «SUGK IRF730/731Z732/733 IRFP330/331/332 , rds(on) Id IRF730/IRFP330 400V 1 .on 5.5A IRF731 /IRFP331 350V 1.00 5.5A IRF732/IRFP332 400V 1.50 4.5A IRF733/IRFP333 350V 1.50 4.5A T0-220 IRF730/7 31/732/733 TO-3P IRFP330/331/332/333 MAXIMUM RATINGS Characteristics Symbol IRF730 IRFP330 IRF731 IRFP331 IRF732 IRFP332 IRF733 IRFP333 Unit
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OCR Scan
733 331 731 MOSFET Z012I 331Z dd173d IRF730/731Z732/733 IRF730/7 IRFP330/331Z332/333 DD173D3 IRF730/731

IRF730

Abstract: IRF730 N-CHANNEL 400V - 0.75 - 5.5A TO-220 PowerMESHTM II MOSFET TYPE IRF730 s s s s , 150 °C (1)ISD 5.5A, di/dt 90A/µs, VDD V(BR)DSS, Tj TJMAX. 1/8 IRF730 THERMAL DATA , pF Output Capacitance 90 pF Reverse Transfer Capacitance 15 pF IRF730 , area. Safe Operating Area Thermal Impedence 3/8 IRF730 Output Characteristics Transfer , Capacitance Variations 4/8 IRF730 Normalized Gate Thereshold Voltage vs Temp. Normalized On
STMicroelectronics
Original
P011C

IRF730FI

Abstract: IRF730 IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE s s s s V DSS R DS( on) ID 400 V 400 V IRF730 IRF730FI < 1 < 1 5.5 A 3.5 A TYPICAL RDS(on) = , Parameter Value Unit IRF730 IRF730FI Drain-source Voltage (V GS = 0) 400 400 V V , safe operating area November 1996 1/10 IRF730/FI THERMAL DATA TO-220 R thj-cas e Rthj , pF pF IRF730/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol
STMicroelectronics
Original
ISOWATT220 IRF730/FI P011G

IRF730

Abstract: IRF731 -39-11 IRF730, IRF731, IRF732, IRF733 Power MOS Field-Effect Transistors File Number 1580 N-Channel , transfer characteristics m High Input impedance â  Majority carrier device The IRF730, IRF731, IRF732 , IRF730 IRF73I IRF732 IRF733 Units Vqs Drain â'¢ Source Voltage CD 400 3S0 400 350 V V0qr Oram â'¢ Gale , 0010370 T 3875081 G E SOLID STATE ~ 01E 18370 D T-39-11 - Standard Power MOSFETs IRF730, IRF731, IRF732 , . Mas. . ' "i Test Conditions bvdss Drain - Souice Breakdown Voltage IRF730 IRF732 400 - - V VGS " 0V
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OCR Scan
LMIT transistor IRF730 1508C

transistor IRF730

Abstract: TA17414 IRF730 Data Sheet January 2002 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an , integrated circuits. Formerly developmental type TA17414. Ordering Information PART NUMBER IRF730 · , PACKAGE TO-220AB Features BRAND D IRF730 NOTE: When ordering, use the entire part number , Semiconductor Corporation IRF730 Rev. B IRF730 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF730 400 400 5.5 3.5 22 ±20 75 0.6 300 -55 to 150 UNITS V V A A A V W W/oC
Fairchild Semiconductor
Original
Application of irf730

irf730

Abstract: N-CHANNEL POWER MOSFETS IRF730/731 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Lower R d s , SUMMARY Part Number V ds RDSIon) Id IRF730 400V i.on 5.5A IRF731 350V i.o n 5.5A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF730 IRF731 Drain-Source Voltage , D E !fi2 1 b 347 â  N-CHANNEL POWER MOSFETS IRF730/731 ELECTRICAL CHARACTERISTICS , V Test Conditions Drain-Source Breakdown Voltage BVdss IRF730 400 IRF731 350
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OCR Scan

irf730

Abstract: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power , directly from integrated circuits. Ordering Information IRF730 Features â'¢ 5.5A, 400V â'¢ r DS , b er BRAND IRF730 NOTE: W hen ordering, use the entire part number. Packaging JEDEC TO , Handling Procedures. 1-800-4-H A R R IS or 407-727-9207 | C opyright © Harris C orporation 1999 IRF730 , . IRF730 400 400 5.5 3.5 22 ±20 75 0.6 300 -55 to 150 .
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OCR Scan

IRF730

Abstract: TA17414 IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an , integrated circuits. Formerly developmental type TA17414. Ordering Information PART NUMBER IRF730 , Boards" Symbol PACKAGE TO-220AB File Number BRAND D IRF730 NOTE: When ordering, use , Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF730 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF730 400 400 5.5 3.5 22 ±20 75
Intersil
Original
ISO9000

IRF730FI

Abstract: IRF730 IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI s s , Parameter Value Unit IRF730 IRF730FI Drain-source Voltage (V GS = 0) 400 400 V V , limited by safe operating area May 1993 1/10 IRF730/FI THERMAL DATA TO-220 R thj-cas e Rthj , pF pF IRF730/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Typ , ISOWATT220 3/10 IRF730/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220
STMicroelectronics
Original
irf730f OC470

IRF730FI

Abstract: I410 ¿57 SGS-THOMSON IRF730 IRF730FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss RDS(on) Id IRF730 IRF730FI 400 V 400 V < 1 a < 1 Q 5.5 A 3.5 A . TYPICAL RDS(on) = 0.82 Q. . AVALANCHE RUGGED , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF730 IRF730FI Vos Drain-source Voltage (Vgs = 0 , IRF730/FI THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C , 50 800 150 65 PF PF PF 2/10 rz7 SCS-THOMSON RiiieR®iiLii£iîR®(iaies IRF730/FI ELECTRICAL
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OCR Scan
I410 vbs32 ISOWATT22Q
Abstract: iH A R R is SM 0 DC0 E ICNUTR IRF730, IRF731, IRF732, IRF733 4.5A and 5.5A, 350V and 400V , ' Symbol Ordering Information PART NUMBER PACKAGE BRAND IRF730 TO -220AB IRF730 IRF731 , 8 ^ , File Number 1580.3 IRF730, IRF731, IRF732, IRF733 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF730 IRF731 IRF732 IRF733 Drain to Source , ss o th e rw ise specified MIN TYP MAX UNITS IRF730, IRF732 400 . . V -
OCR Scan

IRF731

Abstract: irf730 harris IRF730, IRF731, IRF732, IRF733 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 , NUMBER PACKAGE BRAND IRF730 TO-220AB IRF730 IRF731 TO-220AB IRF731 IRF732 , . Copyright © Harris Corporation 1997 5-1 File Number 1580.2 IRF730, IRF731, IRF732, IRF733 , Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF730 400 400 5.5 3.5 22 ±20 75 , PARAMETER MIN TYP IRF730, IRF732 400 - - V IRF731, IRF733 350 - - V
Harris Semiconductor
Original
irf7302 IRF733 harris

drop voltage in irf730

Abstract: SEC IRF730 Advanced Power MOSFET IRF730 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide , Copyrighted By Its Respective Manufacturer IRF730 N-CHANNEL POWER MOSFET Electrical Characteristics (Tc , IRF730 Figi. Output Characteristics Fig 2. Transfer Characteristics V Top : 15V 10V 8.0 V 7.0 , Material Copyrighted By Its Respective Manufacturer IRF730 N-CHANNEL POWER MOSFET Fig 7. Breakdown , N-CHANNEL POWER MOSFET IRF730 Fig 12. Gate Charge Test Circuit & Waveform Current Sampling (IG) Current
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OCR Scan
drop voltage in irf730 SEC IRF730

Application of irf730

Abstract: IRF730 N-channel 400V - 0.75 - 5.5A TO-220 PowermeshTMII Power MOSFET General features Type IRF730 VDSS 400V RDS(on) , application Part number IRF730 Marking IRF730 Package TO-220 Packaging Tube June 2006 Rev 4 1/12 www.st.com 12 Contents IRF730 Contents 1 2 Electrical ratings . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 IRF730 Electrical
STMicroelectronics
Original

IRF730

Abstract: Application of irf730 IRF730 N-channel 400V - 0.75 - 5.5A TO-220 PowermeshTMII Power MOSFET General features Type IRF730 VDSS 400V RDS(on) , -220 Internal schematic diagram Applications Switching application Order codes Part number IRF730 Marking IRF730 Package TO-220 Packaging Tube June 2006 Rev 4 1/12 www.st.com 12 Contents IRF730 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STMicroelectronics
Original

IRF730

Abstract: PE210 °c (·) Pulse width limited by sate operating area Novem ber 1996 1/10 IRF730/FI , pE pE pE 2/10 *T # RKasnuieiragrciiies /IT SGS-THOMSON IRF730/FI ELECTRI CAL CH AR A , 10Z ' ds SGS-THOMSON 3/10 IRF730/FI Thermal Impedance for TO-220 Thermal Impedance , Output Characteristics 4/10 * 7# /IT SGS-THOMSON osineRQiiLiieirRisfignes IRF730/FI , SGS-THOMSON *T# R K H siiiiL iieiragrcio es 5/10 IRF730/FI Normalized Breakdown Voltage vs
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OCR Scan
PE210 irf 730
Abstract: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHF730-E3 IRF730 SiHF730 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730, SiHF730 Vishay Siliconix THERMAL , www.vishay.com/doc?91000 IRF730, SiHF730 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730, SiHF730 Vishay Siliconix
Original
HF730 2002/95/EC IRF730P HF730-E3 2011/65/EU JS709A

transistor IRF730

Abstract: IRF730 IRF730 FEATURES SYMBOL QUICK REFERENCE DATA · Repetitive Avalanche Rated · Fast switching · , The IRF730 is supplied in the SOT78 (TO220AB) conventional leaded package. 1 23 LIMITING , IRF730 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to , Avalanche energy rated Normalised Power Derating PD% 120 IRF730 1 110 100 90 Zth j-mb , IRF730 ID, Drain current (Amps) 20 VGS(TO) / V PHP5N40 VDS > ID x RDS(on)max max. 4
Philips Semiconductors
Original
PHP3N50 PHP3N60
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