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IRF640STRRPBF Vishay Siliconix Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF640SPBF Vishay Siliconix Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF640STRLPBF Vishay Siliconix Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF640PBF Vishay Siliconix Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF640NSPBF Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 visit Digikey Buy
IRF640NLPBF Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN visit Digikey Buy

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Part : IRF640NLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.5789 Price Each : $0.6569
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Part : IRF640NSTRLPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 3,499 Best Price : $0.86 Price Each : $1.43
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Part : IRF640NSTRLPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 220 Best Price : $0.4791 Price Each : $0.7438
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Part : IRF640NSPBF Supplier : Infineon Technologies Manufacturer : Schukat electronic Stock : 1,570 Best Price : €0.3450 Price Each : €0.6585
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Part : IRF640NLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 902 Best Price : £0.7610 Price Each : £1.08
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Part : IRF640NSPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 2,491 Best Price : £0.5520 Price Each : £0.8160
Part : IRF640NSTRLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 5,718 Best Price : £0.4340 Price Each : £0.8090
Part : IRF640PBF Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 3,092 Best Price : £0.6150 Price Each : £1.04
Part : IRF640NSTRRPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 18,400 Best Price : $0.8923 Price Each : $0.9667
Part : IRF640PBF Supplier : Vishay Siliconix Manufacturer : New Advantage Stock : 49,536 Best Price : $1.40 Price Each : $1.52
Part : IRF640SPBF Supplier : Vishay Siliconix Manufacturer : New Advantage Stock : 7,741 Best Price : $1.31 Price Each : $1.42
Part : IRF640STRRPBF Supplier : Vishay Siliconix Manufacturer : New Advantage Stock : 800 Best Price : $1.33 Price Each : $1.33
Part : DIRF64040 Supplier : Thomas & Betts Manufacturer : Sager Stock : - Best Price : $1018.96 Price Each : $1061.41
Part : IRF640NSTRLPBF Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 500 Best Price : $0.69 Price Each : $0.97
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IRF640 Datasheet

Part Manufacturer Description PDF Type
IRF640 Fairchild Semiconductor 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original
IRF640 Harris Semiconductor Power MOSFET Selection Guide Original
IRF640 Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original
IRF640 On Semiconductor Power Field Effect Transistor Original
IRF640 Philips Semiconductors N-channel TrenchMOS transistor Original
IRF640 STMicroelectronics N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET Original
IRF640 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
IRF640 STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP Original
IRF640 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 Original
IRF640 Toshiba Power MOSFETs Cross Reference Guide Original
IRF640 FCI POWER MOSFETs Scan
IRF640 Frederick Components Power MOSFET Selection Guide Scan
IRF640 General Electric Power Transistor Data Book 1985 Scan
IRF640 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF640 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRF640 International Rectifier HEXFET Power Mosfet Scan
IRF640 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB Scan
IRF640 Motorola European Master Selection Guide 1986 Scan
IRF640 Motorola Switchmode Datasheet Scan
IRF640 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

IRF640

Catalog Datasheet MFG & Type PDF Document Tags

RF640

Abstract: irf640 IRF640, IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , 1998 . File Number 1585.4 IRF640, IRF641, ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF640, RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF640, IRF642, RF1S640
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OCR Scan
TB334 TA17422 RF1S640SM9A RF640 IRF640 applications note irf64

IRF640

Abstract: IRF640 SAMSUNG Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF640-3 1.0 1.0 80 Unit K/W K/W K/W Mounting surface , IRF640/641/642/643 FEATURES · · · · · · · Lower Rds (o n ) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF640 , Voss Vdgr Vgs Id Id IoM Igm Eas Ias Pd 18 11 72 18 11 72 ± 1 .5 580 18 125 1.0 - 5 5 to 150 300 IRF640 , d d = 2 5 V , RG= 2 5 il, Starting T j= 2 5 °C eg SAMSUNG Electronics 147 IRF640/641/642
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OCR Scan
IRF640 SAMSUNG IRF540 IR irf640 ir 643 IRF640/641/642/643 IRF640/641Z642/643

linear applications of power MOSFET IRF640

Abstract: irf640 -â'"â'"-Standard Power MOSFETs File Number 1585 IRF640, IRF641, IRF642, IRF643 Power MOS , N-CHANNEL ENHANCEMENT MODE 92CS-3374I TERMINAL DIAGRAM The IRF640, IRF641, IRF642, and IRF643 are , DESIGNATION 92CS-3952B JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF640 IRF641 IRF642 IRF643 Units , ,6mm) from case for 10s) °c 3-169 -Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 , Conditions bvDSS Drain - Source Breakdown Voltage IRF640 IRF642 200 - - V vGs = IQ =â  250«A IRF641
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OCR Scan
linear applications of power MOSFET IRF640 IRF640 circuit F640 transistors irf640 1F640

IRF640

Abstract: IRF640FI IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s R DS( on) ID 200 V 200 V IRF640 IRF640FI < 0.18 < 0.18 18 A 10 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI Drain-source Voltage (V GS = 0) 200 V Drain- gate Voltage (R GS = 20 k) 200 V , limited by safe operating area November 1996 1/9 IRF640/FI THERMAL DATA TO-220 R thj-cas e
STMicroelectronics
Original
IRF640 morocco ISOWATT220 IRF640/FI P011G

irf640

Abstract: IRF640 P CHANNEL MOSFET ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS , Ts tg Tj Parameter IRF640 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G , IRF640F P 200 200 ± 20 18 11 72 125 1.0 5 -65 to 150 150 18(*) 11(*) 72 40 0.32 5 2000 Un it V V V A , Characterized in this Datasheet (*) Limited only by Maximum Temperature Allowed July 1999 1/9 IRF640
STMicroelectronics
Original
IRF640 P CHANNEL MOSFET circuit using irf640 power MOSFET IRF640 fp 0118mm stmicroelectronics datecode TO-220 IRF640/FP

IRF640 morocco

Abstract: irf640 IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI s s , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI , operating area July 1993 1/6 IRF640/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl , . 6.5 13 1600 270 50 Max. Unit S 2100 350 70 pF pF pF IRF640/FI ELECTRICAL , Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/6 IRF640/FI Thermal Impedance
STMicroelectronics
Original
schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free

IRF640 applications note

Abstract: irf640 IRF640, RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are , integrated circuits. File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE , ) er () OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640, RF1S640SM
Fairchild Semiconductor
Original
power MOSFET IRF640

irf640

Abstract: irfp240 haracteristic Junction-to-Case Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF640-3 1.0 1.0 80 IRFP240 , IRF640/641/642/643 IRFP240/241/242/243 FEATURES · · · · · · · Lower R d s (o n ) Improved , SUMMARY Part Number IRF640/IRFP140 IRF641 IRFP241 IRF642/IRFP242 1RF643/IRFP243 Vos 200V 150V 200V 150 V , .5 580 18 125 IRF640 IRFP240 200 200 IRF641 IRFP241 150 150 ±20 16 10 64 16 10 64 IRF642 IRFP242 200 , . RG= 2 5 il. S ta rtin g T, = 2 5 C 156 ELECTRONICS IRF640/641/642/643 IRFP240/241/242/243
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OCR Scan
IRFP243 for irf640 IRF640 n-channel MOSFET Diode c 642 DIODE IRF640 Mosfet irfp240 IRF640/IRFP140

IRFP240

Abstract: IRF640 SAMSUNG .) THERMAL RESISTANCE Symbol Characteristic IRF640-3 IRFP240-3 Unit RthJC Junction-to-Case , b4E D SAMSUNG ELECTRONICS INC â  IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 , RDS , 2 4 0 /2 4 1 /2 4 2 /2 4 3 MAXIMUM RATINGS Characteristics Symbol IRF640 IRFP240 ,   7c lb4142 0 0 1 2 1 ^ 2 731 « S M G K IRF640/641 /642/643 IRFP240/241/242/243 N-CHANNEL
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OCR Scan
IRF640/641 OG121TI F642/IRFP242 IRF643/IRFP243

linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power , to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the , DRAIN GATE IRF640, RF1S640, RF1S640SM Rev. B IRF640, RF1S640, RF1S640SM TC = 25oC, Unless , Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V
Fairchild Semiconductor
Original
IRF640 application note IRF640 field-effect power transistor A10-024

GC525

Abstract: IRF640FI ¿57 SGS-THOMSON IRF640 IRF640FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss RDS(on) Id IRF640 IRF640FI 200 V 200 V < 0.18 a , -220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM a (2) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FI Vos Drain-source Voltage (Vgs = 0) 200 V Vdgr Drain- gâte Voltage (Rgs = 20 k£2) 200 V Vgs , operating area November 1996 1/9 IRF640/FI THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resistance
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GC525 ISOWATT22Q

power MOSFET IRF640 fp

Abstract: irf640 IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V < 0.18 < 0.18 18 A 18 A , Symbol Parameter Value IRF640 V DS V DGR V GS Unit IRF640FP Drain-source Voltage (V GS , IRF640/FP THERMAL DATA TO-220 R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink , 80 pF pF pF IRF640/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ
STMicroelectronics
Original
IRF640 mosfet

IRF640 smd

Abstract: IRF640 applications note IRF640, IRF640S SYMBOL QUICK REFERENCE DATA · 'Trench' technology · Low on-state resistance · , specification N-channel TrenchMOSTM transistor IRF640, IRF640S AVALANCHE ENERGY LIMITING VALUES , specification N-channel TrenchMOSTM transistor IRF640, IRF640S REVERSE DIODE LIMITING VALUES AND , Semiconductors Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Normalised , Product specification N-channel TrenchMOSTM transistor IRF640, IRF640S Drain current, ID (A
Philips Semiconductors
Original
IRF640 smd IRF640 Field-Effect Transistor

irf640

Abstract: IRF240 FAIRCHILD SEMICONDUCTOR ~fl4 MJ 34bTti74 DGETflfiS â¡ IRF240-243/IRF640-643 FAIRCHILD , IRF240-243/IRF640-643 T-39-13 Maximum Ratings Symbol Characteristic Rating IRF240/242 IRF640/642 , /8" From Case for 5 s 275 275 °c Maximum Thermal Characteristics IRF240-243 IRF640-643 , 0.8 x Rated VDss. VGS = 0 V, Tc= 125°C Igss Gate-Body Leakage Current IRF240-243 IRF640-643 nA VGS , ) VDS = 10 V, lD= 10 A 2-99 04 dÃ'T| 34^74 GGETafi? 3 IRF240-243/IRF640-643 T-39-13 Electrical
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IRF240 IRF241 IRF242 IRF243 IRF 1640 IRF640 applications note PULSE GENERATOR IRF-240 IRF240-243/IRF640-643 IRF640/642

irf640

Abstract: Vdd-100V IRF640 N-Channel Enhancement Mode POWER MOSFET DRAIN CURRENT 18 AMPERES 3 DRAIN P b , =100°C) Pulsed Drain Current WEITRON http://www.weitron.com.tw 1/6 Unit V A 04-Nov-08 IRF640 , Switching WEITRON http://www.weitron.com.tw 2/6 ns 04-Nov-08 IRF640 WEITRON http://www.weitron.com.tw 3/6 04-Nov-08 IRF640 Characteristics Curve WEITRON http://www.weitron.com.tw 4/6 04-Nov-08 IRF640 WEITRON http://www.weitron.com.tw 5/6 04-Nov-08 IRF640 TO
Weitron
Original
Vdd-100V TO-220aB 11A datasheet for irf640

irf640

Abstract: hexfet irf640 IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , apply Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640, SiHF640 Vishay , -81241-Rev. A, 07-Jul-08 IRF640, SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise
Vishay Siliconix
Original
hexfet irf640 HF640 IRF640P HF640-E3

IRF640 applications note

Abstract: IRF640 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A , Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO , 5-1 File Number 1585.3 IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless , . . . . . . . . . . . . . . . Tpkg IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 , PARAMETER MIN TYP MAX UNITS IRF640, IRF642, RF1S640, RF1S640SM 200 - - V
Harris Semiconductor
Original
irf6401 IRF643 harris

IRF640 applications note

Abstract: IRF640 I H A R R I S IRF640, IRF641, IRF642, S E M IC O N D U C T O R IRF643, RF1S640, RF1S640SM 16A , PART NUMBER IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640 BRAND GO NOTE: When ordering, use , Procedures. Copyright © Harris Corporation 1997 , p j|e N u m b e r 1585 3 IRF640, IRF641, ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings T c = 25°G, Unless o th e rw ise Specified IRF640
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OCR Scan

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , December 1998 1/7 IRF640/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl , . Unit S 1560 260 80 pF pF pF IRF640/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING
STMicroelectronics
Original

IRF640

Abstract: IRF640 applications note IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 Electrical , so Ob - ro P s) t( IRF640 - IRF640FP 1 Electrical ratings Electrical ratings
STMicroelectronics
Original
JESD97
Abstract: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAYâ"¢ MOSFET TYPE , s s , T j < T jm a x 1/9 IRF640/FP THERMAL DATA TO -220 R e s is ta n c e J u n c tio , o n d u c ta n c e IRF640/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Sym bol td , -220FP 3/9 IRF640/FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP G C 2D 930 , 12 Static Drain-source On Resistance GCS6920 4/9 4 16 V gs( V ) IRF640/FP Gate -
OCR Scan
F640FP

IRF 260 N

Abstract: irf 640 SGS-THOMSON ELiOT@KS IRF IRF 640 /FI 641/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI IRF641 IRF641FI V dss R D S (on) Id 18 A 10 A 18 A 10 A 200 V 200 V 150 V 150 V 0.18 n 0.18 n 0.18 a 0.18 n . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC TO-220 ISOW ATT220 APPLICATIONS . . . HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE
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OCR Scan
TT220 IRF 260 N irf 640 irf 80 n 640FI 640/FI-64 640/FI
Abstract: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 Vishay Siliconix THERMAL RESISTANCE , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 Vishay Siliconix , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 3000 VGS = 0 V, f = 1 MHz Ciss = Vishay Intertechnology
Original
2002/95/EC 2011/65/EU JS709A
Abstract: Speeds â'¢ Linear Transfer Characteristics â'¢ High Input Impedance D escription The IRF640, IRF641 , . A b s o lu te M axim um R atin g s O c = +25°C ), Unless Otherwise Specified IRF640 IRF640R 200 , Zero Gate Voltage Drain Current 'DSS On-State Drain Current (Note 2) IRF640/641, IRF640R/641R , (Note 2) IRF640/641, IRF640R/641R LIMITS TYP 46 35 ns ns _ 43 68 54 64 - 8 , IRF640, /R F 6 4 1 IRF642, IRF643 , P s 4302571 DRAIN-TQ-SÛURCE ON RESISTANCE (NORMALIZEO -
OCR Scan
QDS4033 F640/641/642/643 F640R
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