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Part Manufacturer Description Datasheet BUY
IRF630 STMicroelectronics N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in D2PAK package visit Digikey
IRF630PBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey
IRF630SPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey
IRF630STRRPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey
IRF630STRLPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey
IRF630NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey

IRF630 SEC

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: N-channel enhancement mode vertical DMOS FET IRF630 IRF631 IRF632 IRF633 FEATURES · · · · · · · Compact , , reliability and ruggedness. PRODUCT SUMMARY Part No. IRF630 IRF631 IRF632 IRF633 BVcss 200V 1B0V 200V 150 V , 0005575 S ZETB 95D 0 5 5 7 5 D IRF630 IRF631 IRF632 IRF633 ABSOLUTE MAXIMUM RATINGS Parameter VD S ·o ·d m IRF630 200 9 36 ±20 75 IRF631 150 9 36 ±20 75 IRF632 200 8 32 ±20 75 IRF633 , °C unless otherwise stated) Parameter BVdss Drain-source breakdown voltage Part No. Min. IRF630 IRF632 -
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SEC irf630 for IRF630 TT70S7
Abstract: : (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200 , 25° C Operating and Storage Junction Temperature Range VDSS IRF630/D84DN2 200 IRF631 , 2.4 3.0 â'" mhos off characteristics Drain-Source Breakdown Voltage IRF630/D84DN2 (VGs , â'" 1.0 2.0 Volts Reverse Recovery Time (ls = 9.0A, dls/dt = 100A///sec, Tc = 125 , 2KVA, VD"S = VQS X SI NGLE PULSE V2S-C IRF630/D84DN2 : IRF631/D84DM2-^| 10 20 40 New Jersey Semiconductor
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IRF630/D84DN2 IRF631/D84DM2
Abstract: IRF630 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low , to 150 JC 1.70 /W JA 62 TL 300 Page 1 IRF630 POWER MOSFET , 300us, Duty Cycle 2% * Negligible, Dominated by circuit inductance Page 2 IRF630 POWER MOSFET , , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature Page 3 IRF630 POWER , ) Fig 8. Maximum Safe Operating Area Page 4 IRF630 POWER MOSFET RD VDS 12 12 VGS Suntac Electronic
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irf630 datasheet CIRF630 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS IRF630 p
Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , GATE IRF630 0.27 Figure 1 â'" M1910B Buck Driver for a single 900mA HB LED (VIN = 8 â'" 30V , IRF630 0.27 Figure 2 â'" M1910B Buck-Boost driver powering 3 to 8, 5/7 350mA HB LEDs (VIN = 8 MOSDESIGN Semiconductor
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M1910B/C M1910C 30VDC 1N5819 30VIN IN4004
Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , GATE IRF630 0.27 Figure 1 â'" M1910B Buck Driver for a single 900mA HB LED (VIN = 8 â'" 30V , IRF630 0.27 Figure 2 â'" M1910B Buck-Boost driver powering 3 to 8, 5/7 350mA HB LEDs (VIN = 8 MOSDESIGN Semiconductor
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ac dc led constant current driver IN4007 IRF840 015X45
Abstract: Temperature Range . ­ 65°C to 150°C Lead Temperature (Soldering, 10 sec). , circuitry. HV + 1N4148 V+ T1 V+ DS1 1uF LT1161 HV LOAD IRF630 If the load , 15V 1N4744 51 1uF HV LOAD 51 G1 T2 10uF RS1 0.2 DS2 IRF630 G2 + 1 Linear Technology
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1RFZ24 IRFZ44 equivalent nec ps2501-4 IRFZ44G l1161 LT1161CN SOL20
Abstract: (Soldering, 10 sec). 300°C ORDER PART NUMBER TOP VIEW GND 1 20 V + TIMER1 , HV LOAD IRF630 If the load cannot be returned to supply through RS, or the load supply , sense pin to be pulled down. 2N2222 15V 1N4744 51 T2 HV LOAD RS1 0.2 DS2 IRF630 Linear Technology
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motor driver IRFZ44 MOTOROLA IRF630 marking IRFZ34 mosfet IRF630 MOTOR CONTROL CIRCUIT MTP36N06E IRFZ44 mosfet LT1158 LT1336 LT1910 LTC1922-1 LTC1923
Abstract: Temperature Range . â'" 65°C to 150°C Lead Temperature (Soldering, 10 sec , HV LOAD HV LOAD IRF630 If the load cannot be returned to supply through RS, or the load , LT1161 drain sense pin to be pulled down. 2N2222 15V 1N4744 51â"¦ DS2 RS1 0.2â"¦ IRF630 Linear Technology
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Abstract: the screen reaches 250 (iA. I Sec T igure 2.) Read B V |)ViS troni the screen. data sheet also , IKT630). Read the value of l l)ss from the display [sec figure 3). The vertical sensiti\il> may need , , change the P O L A R I T Y switch to the P N P position, and reapply the voltage (sec Figure 6). The , value of \D. Beware of device heating. Figure 1! shows the trace obtained with the IRF630. To obtain the -
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AN-957B ic 957B 957b 1ay transistor AN957B tektronix 576 curve tracer 957b ic
Abstract: °C Lead Temperature (Soldering, 10 sec). 300°C ORDER PART NUMBER TOP VIEW GND 1 , the LT1910, local supply decoupling 5V R1 5.1k 3 HV HV LOAD 51 Q1 IRF630 15V Linear Technology
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motor stepper driver IRFZ44 stepper motor using irfz44 DIODE ZENER 2.9V IRFZ34 LT1910ES8 LTC1266 LTC1155 LTC1163 LTC1255 LTC1477 LTC1623 LTC1693
Abstract: Temperature Range . ­ 65°C to 150°C Lead Temperature (Soldering, 10 sec). , HV LOAD 51 Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1uF C1 10uF 50V RS Linear Technology
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1910i LTC1710 LTC4412
Abstract: °C Lead Temperature (Soldering, 10 sec). 300°C ORDER PART NUMBER LT1910ES8 S8 PART , IRF630 51 15V 1N4744 + 2N2222 C1 10uF 50V LT1006 + ­ 51 1910 F08b RS 0.02 LT1910 Linear Technology
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mosfet motor dc 48v 2N3904 MTD3055EL 1N6011B
Abstract: IRF540 IRF610 IRF620 IRF630 IRF640 IRF614 IRF624 IRF634 IRF644 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 , H IGH A S 1 X 10 12 R A D S (SI)/SEC. · V IR T U A L L Y IM M U N E T O S E U . (1) PA CK A G ES -
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MO-D36AB IRF9510 SEC IRF510 SEC IRF540 smd D 10.7 A 2n6845 jantx MIL-S-19500 T0-205AF T0-254AA T0-204AA/AE
Abstract: Range. ­65°C to 150°C Lead Temperature (Soldering, 10 sec) . 300 , 5.1k 3 LT1910 8 V+ FAULT 6 4 IN SENSE 5 2 TIMER GATE HV HV LOAD 51 Q1 IRF630 Linear Technology
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LT1910IS8 1910e SCR 100V 1A 1910fa CT1F
Abstract: Temperature Range. â'"65°C to 150°C Lead Temperature (Soldering, 10 sec , © Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1ÂuF C1 10ÂuF 50V RS 0.02Ω LT1006 Linear Technology
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lt1910 application note
Abstract: . â'"65°C to 150°C Lead Temperature (Soldering, 10 sec) . 300°C TOP VIEW GND , GATE HV HV LOAD 51Ω Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1ÂuF RS 0.02Î Linear Technology
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Abstract: . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , : 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V/div , =0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a. Transformer-coupled MGD with UV , TRANSFORMER: CORE: 266CT125-3E2A, (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28 International Rectifier
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GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 IC details CD4093 IRF540 complementary AN-937 INT-990
Abstract: . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , : 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V/div , =0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a. Transformer-coupled MGD with UV , TRANSFORMER: CORE: 266CT125-3E2A, (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28 International Rectifier
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TTL dm7400 CI 7407 ic cd4093 IR2121 equivalent oscillator with CD4093 Types CD4093 applications
Abstract: . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , =0.153CM^2) PRIMARY: 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V , 3E2A, A1=2600 (OD=0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a , , (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28 Figure 28a International Rectifier
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ca3103 IR7509 zener in4148 dc to dc chopper NOT GATE 7406 IC relay design gban-pvi
Abstract: , SEC.: 27T Fig. 24a - Improving the Performance of a Gate Drive Transformer Document Number Vishay Siliconix
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2n2222 -331
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