500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
IRF630SPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy
IRF630STRLPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy
IRF630STRRPBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN visit Digikey Buy
IRF630NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF630NPBF Infineon Technologies AG Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy
IRF630PBF Vishay Siliconix Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy

IRF630 SEC

Catalog Datasheet MFG & Type PDF Document Tags

SEC irf630

Abstract: IRF630 N-channel enhancement mode vertical DMOS FET IRF630 IRF631 IRF632 IRF633 FEATURES · · · · · · · Compact , , reliability and ruggedness. PRODUCT SUMMARY Part No. IRF630 IRF631 IRF632 IRF633 BVcss 200V 1B0V 200V 150 V , 0005575 S ZETB 95D 0 5 5 7 5 D IRF630 IRF631 IRF632 IRF633 ABSOLUTE MAXIMUM RATINGS Parameter VD S ·o ·d m IRF630 200 9 36 ±20 75 IRF631 150 9 36 ±20 75 IRF632 200 8 32 ±20 75 IRF633 , °C unless otherwise stated) Parameter BVdss Drain-source breakdown voltage Part No. Min. IRF630 IRF632
-
OCR Scan
SEC irf630 IRF630 SEC for IRF630 TT70S7

SEC irf630

Abstract: : (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. IRF630,631 D84DN2,M2 9.0 AMPERES 200 , 25° C Operating and Storage Junction Temperature Range VDSS IRF630/D84DN2 200 IRF631 , 2.4 3.0 â'" mhos off characteristics Drain-Source Breakdown Voltage IRF630/D84DN2 (VGs , â'" 1.0 2.0 Volts Reverse Recovery Time (ls = 9.0A, dls/dt = 100A///sec, Tc = 125 , 2KVA, VD"S = VQS X SI NGLE PULSE V2S-C IRF630/D84DN2 : IRF631/D84DM2-^| 10 20 40
New Jersey Semiconductor
Original
IRF630/D84DN2 IRF631/D84DM2

SEC irf630

Abstract: IRF630 SEC IRF630 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low , to 150 JC 1.70 /W JA 62 TL 300 Page 1 IRF630 POWER MOSFET , 300µs, Duty Cycle 2% * Negligible, Dominated by circuit inductance Page 2 IRF630 POWER MOSFET , , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature Page 3 IRF630 POWER , ) Fig 8. Maximum Safe Operating Area Page 4 IRF630 POWER MOSFET RD VDS 12 12 VGS
Suntac Electronic
Original
irf630 datasheet CIRF630 4.5V TO 100V INPUT REGULATORS 4.5V to 100V input regulator IRF630 p
Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , GATE IRF630 0.27 Figure 1 â'" M1910B Buck Driver for a single 900mA HB LED (VIN = 8 â'" 30V , IRF630 0.27 Figure 2 â'" M1910B Buck-Boost driver powering 3 to 8, 5/7 350mA HB LEDs (VIN = 8 MOSDESIGN Semiconductor
Original
M1910B/C M1910C 30VDC 1N5819 30VIN IN4004

ac dc led constant current driver

Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , GATE IRF630 0.27 Figure 1 â'" M1910B Buck Driver for a single 900mA HB LED (VIN = 8 â'" 30V , IRF630 0.27 Figure 2 â'" M1910B Buck-Boost driver powering 3 to 8, 5/7 350mA HB LEDs (VIN = 8
MOSDESIGN Semiconductor
Original
ac dc led constant current driver IN4007 IRF840 015X45

1RFZ24

Abstract: IRFZ44 equivalent Temperature Range . ­ 65°C to 150°C Lead Temperature (Soldering, 10 sec). , circuitry. HV + 1N4148 V+ T1 V+ DS1 1µF LT1161 HV LOAD IRF630 If the load , 15V 1N4744 51 1µF HV LOAD 51 G1 T2 10µF RS1 0.2 DS2 IRF630 G2 + 1
Linear Technology
Original
1RFZ24 IRFZ44 equivalent nec ps2501-4 l1161 IRFZ44G LT1161CN SOL20

IRFZ44 equivalent

Abstract: SEC irf630 (Soldering, 10 sec). 300°C ORDER PART NUMBER TOP VIEW GND 1 20 V + TIMER1 , HV LOAD IRF630 If the load cannot be returned to supply through RS, or the load supply , sense pin to be pulled down. 2N2222 15V 1N4744 51 T2 HV LOAD RS1 0.2 DS2 IRF630
Linear Technology
Original
LT1336 MOTOROLA IRF630 marking motor driver IRFZ44 IRFZ34 mosfet IRF630 MOTOR CONTROL CIRCUIT IRFZ44 mosfet MTP36N06E LT1158 LT1910 LTC1922-1 LTC1923
Abstract: Temperature Range . â'" 65°C to 150°C Lead Temperature (Soldering, 10 sec , HV LOAD HV LOAD IRF630 If the load cannot be returned to supply through RS, or the load , LT1161 drain sense pin to be pulled down. 2N2222 15V 1N4744 51â"¦ DS2 RS1 0.2â"¦ IRF630 Linear Technology
Original

ic 957B

Abstract: 957b the screen reaches 250 (iA. I Sec T igure 2.) Read B V |)ViS troni the screen. data sheet also , IKT630). Read the value of l l)ss from the display [sec figure 3). The vertical sensiti\il> may need , , change the P O L A R I T Y switch to the P N P position, and reapply the voltage (sec Figure 6). The , value of \D. Beware of device heating. Figure 1! shows the trace obtained with the IRF630. To obtain the
-
OCR Scan
AN-957B ic 957B 957b 1ay transistor tektronix 576 curve tracer AN957B 957b ic

motor stepper driver IRFZ44

Abstract: LT1910 °C Lead Temperature (Soldering, 10 sec). 300°C ORDER PART NUMBER TOP VIEW GND 1 , the LT1910, local supply decoupling 5V R1 5.1k 3 HV HV LOAD 51 Q1 IRF630 15V
Linear Technology
Original
motor stepper driver IRFZ44 stepper motor using irfz44 DIODE ZENER 2.9V IRFZ34 LT1910ES8 LTC1266 LTC1155 LTC1163 LTC1255 LTC1477 LTC1623 LTC1693

IRF630 MOTOR CONTROL CIRCUIT

Abstract: 1910i Temperature Range . ­ 65°C to 150°C Lead Temperature (Soldering, 10 sec). , HV LOAD 51 Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1µF C1 10µF 50V RS
Linear Technology
Original
1910i LTC1710 LTC4412

stepper motor using irfz44

Abstract: mosfet motor dc 48v °C Lead Temperature (Soldering, 10 sec). 300°C ORDER PART NUMBER LT1910ES8 S8 PART , IRF630 51 15V 1N4744 + 2N2222 C1 10µF 50V LT1006 + ­ 51 1910 F08b RS 0.02 LT1910
Linear Technology
Original
mosfet motor dc 48v 2N3904 MTD3055EL 1N6011B

LT1910IS8

Abstract: 1910e Range. ­65°C to 150°C Lead Temperature (Soldering, 10 sec) . 300 , 5.1k 3 LT1910 8 V+ FAULT 6 4 IN SENSE 5 2 TIMER GATE HV HV LOAD 51 Q1 IRF630
Linear Technology
Original
LT1910IS8 1910e SCR 100V 1A CT1F 1910fa

MO-D36AB

Abstract: IRF9510 SEC IRF540 IRF610 IRF620 IRF630 IRF640 IRF614 IRF624 IRF634 IRF644 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 , H IGH A S 1 X 10 12 R A D S (SI)/SEC. · V IR T U A L L Y IM M U N E T O S E U . (1) PA CK A G ES
-
OCR Scan
MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd MIL-S-19500 T0-205AF T0-254AA T0-204AA/AE

lt1910 application note

Abstract: Temperature Range. â'"65°C to 150°C Lead Temperature (Soldering, 10 sec , © Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1µF C1 10µF 50V RS 0.02Ω LT1006
Linear Technology
Original
lt1910 application note

lt1910 application note

Abstract: LT1910 . â'"65°C to 150°C Lead Temperature (Soldering, 10 sec) . 300°C TOP VIEW GND , GATE HV HV LOAD 51Ω Q1 IRF630 15V 1N4744 GND 1 + 2N2222 CT 1µF RS 0.02Î
Linear Technology
Original

266CT125-3E2A

Abstract: GBAN-PVI-1 . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , : 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V/div , =0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a. Transformer-coupled MGD with UV , TRANSFORMER: CORE: 266CT125-3E2A, (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28
International Rectifier
Original
GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary AN-937 INT-990

HEXFET Power MOSFET designer manual

Abstract: GBAN-PVI-1 . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , : 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V/div , =0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a. Transformer-coupled MGD with UV , TRANSFORMER: CORE: 266CT125-3E2A, (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28
International Rectifier
Original
HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CI 7407 ic cd4093 IR2121 equivalent oscillator with CD4093 Types

GBAN-PVI-1

Abstract: ca3103 . VINPUT VH +12V V V/SEC RC WITH DIODE CONNECTED AS SHOWN SLOPE OF LOAD C 7 8 2 R , =0.153CM^2) PRIMARY: 17T, SEC.: 27T Figure 24a. Improving the performance of a gate drive transformer Input: 5V , 3E2A, A1=2600 (OD=0.625", Ae=0.153 CM^2) PRIMARY: 17T, AWG 28 SEC: 27T, AWG 28 Figure 26a , , (OD=0.325", Ae=0.072cm,^2, A1=2135) PRIMARY: 8T, AWG 28 SEC: 8T, AWG 28 Figure 28a
International Rectifier
Original
ca3103 IR7509 dc to dc chopper zener in4148 CD4093 applications NOT GATE 7406 IC

ca3103

Abstract: 2n2222 -331 , SEC.: 27T Fig. 24a - Improving the Performance of a Gate Drive Transformer Document Number
Vishay Siliconix
Original
2n2222 -331
Showing first 20 results.