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IRF610STRLPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF610PBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF610SPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF610STRRPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF610LPBF Vishay Siliconix MOSFET N-CH 200V 3.3A TO-262 visit Digikey Buy

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IRF610 Datasheet

Part Manufacturer Description PDF Type
IRF610 Fairchild Semiconductor 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Original
IRF610 Harris Semiconductor Power MOSFET Selection Guide Original
IRF610 Intersil 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Original
IRF610 Texas Instruments High-Speed CMOS Logic Quad D-Type Flip-Flop with Reset Original
IRF610 Toshiba Power MOSFETs Cross Reference Guide Original
IRF610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A TO-220AB Original
IRF610 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan
IRF610 FCI POWER MOSFETs Scan
IRF610 Frederick Components Power MOSFET Selection Guide Scan
IRF610 General Electric Power Transistor Data Book 1985 Scan
IRF610 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Scan
IRF610 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 3.3A, Pkg Style TO-220AB Scan
IRF610 International Rectifier HEXFET Power MOSFET Scan
IRF610 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan
IRF610 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 3.3A, Pkg Style TO220AB Scan
IRF610 Motorola Switchmode Datasheet Scan
IRF610 Motorola European Master Selection Guide 1986 Scan
IRF610 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF610 N/A 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Scan
Showing first 20 results.

IRF610

Catalog Datasheet MFG & Type PDF Document Tags

IRF610

Abstract: IRF612 3469674 FAIRCHILD SEMICONDUCTOR M^m 0027^ FAIRCHILD A Schlumberger Company IRF610-613 , package outline, reter to 2-152 3469674 FAIRCHILD SEMICONDUCTOR "fl4 | 341,^1,74 0DE7T4D 3 IRF610-613 , Characteristics vGS(th) Gate Threshold Voltage IRF610-613 MTP2N18/20 V lD = 250 uA, VDS = VGS lD = 1 mA , = 45 V 2-153 3469674 FAI RCHILD SEM I CONDUCTOR^ DeT| 34^74 ÃDa7T4l IRF610-613 MTP2N18/2N20 , ¡57ci4a 7 IRF610-613 MTP2N18/2N20 J. Typical Performance Curves (Cont.) Figure 5 Capacitance vs Drain to
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OCR Scan
IRF612 IRF613 MTP2N18 MTP2N20 irf P 611 NITP2N20 IRF610/612

irf610

Abstract: power MOSFET IRF610 IRF610/611/612/613 FEATURES · · · · · · · Lower Rds < on) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF610 , 3.3 2.1 8 ± 1 .5 46 3.3 43 0 .3 4 - 5 5 to 150 300 IRF610 200 200 IRF611 150 150 ±20 2.6 1.6 6.5 2.6 , , R g = 2 5 0 , Starting T j= 2 5 °C 134 ELECTRONICS IRF610/611/612/613 ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source Breakdown Voltage IRF610 /6 1 2 BVoss IR F611/613 VGS(th
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OCR Scan
power MOSFET IRF610 F611 mosfet irf610 irf610 mosfet IRF-610 IRF610/611/612/613

irf610

Abstract: power MOSFET IRF610 Junction-to-Ambient MAX TYP MAX IRF610-3 2.9 0.5 80 Unit K/W K/W K/W Mounting surface flat, smooth, and greased Free , IRF610/611/612/613 FEATURES · · · · · · · Lower Rds (on) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF610 , Id b Idm Igm Eas Ias Pd 3.3 2.1 8 3.3 2.1 8 ± 1 .5 46 3.3 43 0.3 4 - 5 5 to 150 300 IRF610 200 200 , V , RG= 2 5 0 , Starting T j = 2 5 ° C eg SAM SUNG Electronics 137 IRF610/611/612/613
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OCR Scan
IRF61 pulse electronics era irf610 samsung

IRF610

Abstract: 250M IRF610/611 N-CHANNEL POWER MOSFETS FEATURES â'¢ Lower Rosìon) â  Improved inductive , Number Vds RDSfon) Id IRF610 200V 1.50 3.3A IRF611 150 V i.sn 3.3A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF610 IRF611 Unit Drain-Source Voltage (1) Vdss 200 150 Vdc Drain-Gate Voltage (Rgs , IRF610/611 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25°C unless Otherwise specified) Symbol Characteristic Min Typ Max Units Test Conditions BVdss Drain-Source Breakdown Voltage IRF610
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OCR Scan
250M 25CC IRF610/611

IRF013

Abstract: power MOSFET IRF610 IRF610/611/612/613 FEATURES · Lower R d s (ON) · Improved inductive ruggedness N-CHANNEL POWER , IRF610 IRF611 IRF612 IRF613 Vos 200V 150V 200V 150V R0S(on) i.s n 1.5Q 2.4Ü 2 .40 Id 3.3A 3.3A 2.6A 2.6A IRF610/611/612/613 MAXIMUM RATINGS Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (Rqs , IRF610 200 200 3.3 2,1 8 IRF611 150 150 ±20 3 3 2.1 8 ±1 .5 46 3.3 43 0.34 IRF612 200 200 2.6 1.6 , =25il, Starting Tj=25°C «BElectronics SAMSUNG 194 IRF610/611/612/613 ELECTRICAL CHARACTERISTICS Symbol
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OCR Scan
IRF013 D33A 1RF610 613 33A IRF61Q

irf610

Abstract: MOSFET irf 939 , ease of paralleling and tem perature stability of the electrical parameters. BV q s S IRF610 , 0 I 4055452 000041,? 7 | T . 39- I I IRF610, IRF611, IRF612, IRF613 Devices INTERNATIONAL R E C T I F I E R Absolute Maximum Ratings IRF610, IRF611 IRF612, IRF613 Iq < T q « 25 , © Type IRF610 IRF612IRF811 IRF613 IRF610 IRF011 Min. v GS , VGS - 10V, lD - 1.6A A 1.2 - IRF610 IRF611 VDS> *D(on) X RDS(on)MaxVq s - 10V V
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OCR Scan
MOSFET irf 939 S54S2 T0-220AB C-220 RF610 RF611 T-39-11

IRF610

Abstract: power MOSFET IRF610 Power MOSFETs File Number 1576 IRF610, IRF611, IRF612, IRF613 Power MOS Field-Effect Transistors , -33741 TERMINAL DIAGRAM The IRF610, IRF611, IRF612 and IRF613 are n-channel enhancement-mode silicon-gate power , DE 1 3fl7SDöl 001Ã34S 0 I 3875081 G E SOLID STATE 01E 18345 DT Standard Power MOSFETs _ IRF610 , Type Mm Tvp Max. Units Test Conditions BVpgy Drain â'¢ Source Breakdown Voltage IRF610 IRF612 200 - - , Current 'D(on) * RDS
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OCR Scan
S2CS-33741 92CS-395S8 AF61I

IRF610

Abstract: irf610 ir -220 IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , IRF610, SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , , exemptions may apply Document Number: 91023 S-81240-Rev. A, 16-Jun-08 www.vishay.com 1 IRF610, SiHF610 , : 91023 S-81240-Rev. A, 16-Jun-08 IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , On-Resistance vs. Temperature Document Number: 91023 S-81240-Rev. A, 16-Jun-08 www.vishay.com 3 IRF610
Vishay Siliconix
Original
irf610 ir HF610 IRF610P HF610-E3
Abstract: ™ K N-CHANNEL POWER MOSFETS IRF610/611 /612/613 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â , PRODUCT SUMMARY Part Number Vos R d s < i >) o Id IRF610 200V 1.5 « 3.3A IRF611 , MAXIMUM RATINGS Symbol IRF610 IRF611 IRF612 IRF613 Unit Drain-Source Voltage (1 , G K N-CHANNEL POWER MOSFETS bME D IRF610/611/612/613 ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage IRF610/612 200 - - V VGs=0V IRF611/613 150 â'" â -
OCR Scan
10OA/ 0G12172

IRF610

Abstract: MOSFET dynamic S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF610PbF SiHF610-E3 IRF610 , IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , ?91000 IRF610, SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , ?91000 IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 VGS , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix 300 VGS = 0 V
Vishay Siliconix
Original
MOSFET dynamic 2002/95/EC

IRF610

Abstract: 1RF610-613 3469674 FAIRCHILD SEMICONDUCTOR ^T» â bbkmmh IRF610-613 fairchild MTP2N18/2N20 A , SEMICONDUCTOR "fl4 | 341,^1,74 0DE7T4D 3 IRF610-613 MTP2N18/2N20 T-^-O^ Electrical Characteristics (Te = 25 , ±500 nA VGS = ± 20 V, Vds = o V On Characteristics vGS(th) Gate Threshold Voltage IRF610-613 , CONDUCTOR^ DeT| 34^74 ÃDa7T4l IRF610-613 MTP2N18/2N20 "T-^^O^ Electrical Characteristics (Cont.) (Tc = , FAIRCHILD SEMICONDUCTOR fl4 DE | 34^74 â¡â¡57ci4a 7 IRF610-613 MTP2N18/2N20 J. Typical Performance
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OCR Scan
1RF610-613 2N20 MTP2n irf 613 IRF612/613 FC11M0F PCU100F

IRF612

Abstract: IRF613 Standard Power MOSFETsâ'"- IRF610, IRF611, IRF612, IRF613 Power MOS Field-Effect Transistors , carrier device GO- TERMINAL DIAGRAM The IRF610, IRF611, IRF612 and IRF613 are n-chanriel , 92CS-39528 JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF610 IRF611 IRF612 IRF613 Units Vpg Dram , case for 10s) °c 3-154. -Standard Power MOSFETs IRF610, IRF611, IRF612, IRF613 Electrical , . Rating x 0.8, VGS OV, Tc = 1 25°C 'Oloni On-State Dram Current © IRF610 IRF611 2.5 - - A VDS
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OCR Scan
IRFB10 IRF 513#
Abstract: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET , integrated circuits. Ordering Information IRF610 Features â'¢ 3.3A, 200V â'¢ r DS(ON) = , PC Boardsâ' Formerly developmental type TA17442. PART NUM BER File Number BRAND IRF610 , . 1-800-4-H A R R IS or 407-727-9207 | C opyright © Harris C orporation 1999 IRF610 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF610 UNITS Drain to Source Voltage (Note 1 -
OCR Scan
TB334

IRF610

Abstract: IRF611 S E M I C O N D U C T O R IRF610, IRF611, IRF612, IRF613 2.6A and 3.3A, 150V and 200V, 1.5 and , Surface Mount Components to PC Boards" Symbol Ordering Information D PART NUMBER IRF610 IRF611 IRF612 IRF613 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF610 IRF611 IRF612 IRF613 S G , IRF610, IRF611, IRF612, IRF613 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 , 125oC 2 4 25 250 V V V µA µA MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF610, IRF612
Harris Semiconductor
Original
Abstract: ® IRF610, IRF611, IRF612, IRF613 H R I A RS S E M I C O N D U C T O R 2.6A and 3.3A , Ordering Information PART NUMBER PACKAGE BRAND IRF610 TO -220AB IRF610 IRF611 TO , © Harris Corporation 1997 ^ , File Number 1576.2 IRF610, IRF611, IRF612, IRF613 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF610 IRF611 IRF612 IRF613 Drain , IRF610, IRF612 200 . . V IRF611, IRF613 150 - - V V DS = VGS> I d = 250nA -
OCR Scan
RF612 RF613

irf610 mosfet

Abstract: IRF610 IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Title F61 bt 3A, 0V, 00 m, anOrdering Information wer OST) uthor PART NUMBER IRF610 PACKAGE TO-220AB BRAND IRF610 Features · 3.3A, 200V · rDS(ON) = 1.500 · Single Pulse Avalanche Energy Rated · SOA is , DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation IRF610 Rev. A IRF610 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 200 200 3.3 2.1 8 ±20 43 0.34 46 -55
Fairchild Semiconductor
Original
4V801

qk1 motor

Abstract: 1RF610 Surface Mount Components to PC Boards" Symboi Ordering Information PART NUMBER IRF610 IRF611 IRF612 IRF613 PACKAGE TO-220AB TO-220AB TO-220AB TO-22QAB BRAND IRF610 IRF611 IRF612 IRF613 NOTE: When , = 25 °c. Unless Otherwise Specified IRF610 Drain to Source Voltage (Note 1 , TYP MAX UNITS Drain to Source Breakdown Voltage IRF610, IRF612 IRF611, IRF613 Gate Threshold , 2) IRF610, IRF611 IRF612, IRF613 Gate to Source Leakage Current Drain to Source On Resistance (Note
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OCR Scan
qk1 motor

power MOSFET IRF610

Abstract: Lead (Pb)-free SnPb TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF610, SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 , ?91000 IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 Top , ?91000 IRF610, SiHF610 Vishay Siliconix 300 250 200 Ciss 150 Coss 100 50 0 100 101 Crss ISD, Reverse
Vishay Siliconix
Original
2011/65/EU

power MOSFET IRF610

Abstract: Lead (Pb)-free SnPb TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF610, SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 , ?91000 IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 Top , ?91000 IRF610, SiHF610 Vishay Siliconix 300 250 200 Ciss 150 Coss 100 50 0 100 101 Crss ISD, Reverse
Vishay Siliconix
Original
Abstract: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix THERMAL , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix Vishay Siliconix
Original
JS709A
Abstract: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHF610-E3 IRF610 SiHF610 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix THERMAL , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix , www.vishay.com/doc?91000 IRF610, SiHF610 Vishay Siliconix 300 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd Vishay Siliconix
Original

transistor IRF 610

Abstract: power MOSFET IRF610 Characterized for Use With Inductive Loads P art N u m b e r IRF610 VPS 2 00 V rDS (on) d 2 .5 A , . CASE 2 21 A -0 4 TO-22QAB MOTOROLA TMOS POWER MOSFET DATA IRF610, 612 ELECTRICAL , 100°C) (V q s = 25 V, V q s = 0, f = 1.0 M Hz) IRF610 IRF612 IRF610 IRF612 'D S S 'g s s f -
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OCR Scan
transistor IRF 610
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