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1 - 50 of about 141 for IRF540 |
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First line: VCCOUT .1uf CON4 VMOTOR VCCOUT REFIN .01uf 220K VCCOUT 470pf 100K SENSE Abstract: .. IRF540. 2. 1. 3. E1. J3. CON4. 1 2 3 4. R3. 1K. C2 .1uf. W4. JUMPER. REFIN. C10 .01uf. J6. 2. 1 3. J10. 2. 1 3. J19. 2. 1 3. D7. TBD 1 2. D6 .. IRF540. 2. 1. 3. R14. 0.25. J9. 2. 1 3. J21. 2. 1 3. U4B NDS9945 3. 4. 5 6. J24. 2. 1 3. U3A NDS9945 1. 2. 7 8. J14. 2. 1 3. C3 .1uf. R5 30. R2 .. datasheet abstract.. |
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First line: N-CHANNEL 100V TO-220 GATE CHARGE STripFET POWER MOSFET TYPE IRF540 IRF540 VDSS Abstract: .. 1/8 February 2003 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 & IRF540. N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET. ■ TYPICAL RDS on = 0.055Ω .. datasheet abstract.. |
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First line: ESIG ITUTE SUBST January Data ISheet IRF540 IRF540 RF1S540SM 100V N-Channel Power Abstract: .. ©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B. IRF540, RF1S540SM. 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power .. datasheet abstract.. |
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First line: N-CHANNEL 100V TO-220 GATE CHARGE STripFET POWER MOSFET TYPE IRF540 IRF540 VDSS Abstract: .. IRF540. N-CHANNEL 100V - 0.065 Ω - 30A TO-220 LOW GATE CHARGE STripFET] POWER MOSFET. ■ TYPICAL RDS on = 0.065Ω. ■ EXCEPTIONAL dv/dt CAPABILITY. ■ 100% AVALANCHE TESTED. ■ LOW GATE CHARGE. ■ APPLICATION .. datasheet abstract.. |
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First line: Semiconductor IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM 100V N-Channel Power MOSFETs Description Abstract: .. IRF540 TO-220AB IRF540. IRF541 TO-220AB IRF541. IRF542 TO-220AB IRF542. IRF543 TO-220AB IRF543. RF1S540 TO-262AA RF1S540. RF1S540SM TO-263AB RF1S540SM. NOTE: When ordering, use the entire part .. datasheet abstract.. |
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First line: IRF540 IRF540FI CHANNEL ENHANCEMENT MODE POWER TRANSISTORS TYPE IRF540 IRF540FI TYPICAL RDS on Abstract: .. IRF540 IRF540FI. N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. ■ TYPICAL RDS on = 0.045 Ω. ■ AVALANCHE RUGGED TECHNOLOGY. ■ 100% AVALANCHE TESTED. ■ REPETITIVE AVALANCHE DATA AT 100 o C. ■ LOW GATE .. datasheet abstract.. |
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First line: IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM 100V N-Channel Power MOSFETs Packages JEDEC Abstract: .. Description The IRF540, IRF541, IRF542, IRF543, RF1S540, and RF1S540SM are N-Channel enhancement mode silicon-gate power field-effect transistors. All types are advanced power MOSFETs .. datasheet abstract.. |
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First line: IRF540 IRF540FI CHANNEL100V TO-220 / TO-220FI POWER MOSFET TYPE IRF540 IRF540F DS on TYPICAL RDS on Abstract: .. IRF540 IRF540FI. N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET. ■ TYPICAL RDS on = 0.050 Ω. ■ AVALANCHE RUGGED TECHNOLOGY. ■ 100% AVALANCHE TESTED. ■ REPETITIVE AVALANCHE DATA AT 100 .. datasheet abstract.. |
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First line: IRF540 SiHF540 Vishay Siliconix Power MOSFET PRODUCT SUMMARY RDS on Max. nC nC Abstract: .. IRF540, SiHF540 Vishay Siliconix. FEATURES • Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead .. datasheet abstract.. |
1900.65 Kb |
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First line: ESIG ITUTE SUBST Data ISheet IRF540 IRF540 RF1S540SM June File Number 100V Abstract: .. IRF540, RF1S540SM. 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed .. datasheet abstract.. |
74.39 Kb |
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First line: Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540 IRF540S FEATURES Trench technology Abstract: .. Philips Semiconductors Product specification. N-channel TrenchMOSTM transistor IRF540, IRF540S. FEATURES SYMBOL QUICK REFERENCE DATA. • ’Trench’ technology • Low on-state resistance VDSS .. datasheet abstract.. |
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First line: IRF540 RF1S540SM Data Sheet November File Number 100V N-Channel Power MOSFETs These Abstract: .. IRF540, RF1S540SM. 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed .. datasheet abstract.. |
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First line: RF-Micom co.Ltd Sale Phone 86-592-5713956 MOSFETs Progress Power Switching Cross Reference More Abstract: .. IRF540 IRF540 STP24NF10. IRF540A STP33N10. IRF540FI IRF540FI. IRFWZ44A STB55NE06. IRFZ14A STP16NE06. IRFZ44A STP55NF06. IRL510A STP4N20. IRL520A STP7NB20. IRL530A STP20NE10. IRL540A STP19NB20 .. datasheet abstract.. |
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First line: MOSFETs Progress Power Switching Cross Reference More Intelligent Solutions FAIRCHILD SAMSUNG FAIRCHILD Abstract: .. IRF540 IRF540 STP24NF10. IRF540A STP33N10. IRF540FI IRF540FI. IRFWZ44A STB55NE06. IRFZ14A STP16NE06. IRFZ44A STP55NF06. IRL510A STP4N20. IRL520A STP7NB20. IRL530A STP20NE10. IRL540A STP19NB20 .. datasheet abstract.. |
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First line: Power MOSFETs Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT Abstract: .. BUK455-100A IRF540 BUK455-200A IRF640 BUK455-400B STP7NA40 BUK455-500B STP5NA50 BUK455-600B STP4NA60 BUK455-60A STP36N06 BUK455-60B STP36N06 BUK456-100A STP33N10 BUK456-100B STP3NA100 .. datasheet abstract.. |
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First line: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 Abstract: .. IRF540 STMicroelectronics. IRF620 STMicroelectronics. IRF630 STMicroelectronics. IRF640 STMicroelectronics. IRF730 STMicroelectronics. IRF740 STMicroelectronics. IRF820 STMicroelectronics .. datasheet abstract.. |
293.88 Kb |
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First line: Application Note Micrel Application Note Driving Halogen Lamps Brenda Kovacevic Introduction Halogen Abstract: .. The power FET chosen for this design is an IRF540, which has an RDS on of 77 mΩ , but a peak voltage capability of 100 V. It has a peak drain current specification of 110 A maximum, and a continuous .. datasheet abstract.. |
63.17 Kb |
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First line: MANF. Alpha Semi AS1115 AS1117 AS1580 AS1581 AS1582 AS1583 AS2431 AS2810 AS2815 Abstract: .. IRF540 IRF540 IRF610 IRF610 IRF620 IRF620 IRF630 IRF630 IRF634 IRF634 IRF640 IRF640 .. datasheet abstract.. |
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First line: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 Abstract: .. STP4NB50 BUK454-600B STP3NB60 BUK454-800A STP3NA90 BUK455-100A IRF540 BUK455-200A STP19NB20 BUK455-400B STP7NB40 BUK455-500B STP6NB50 BUK455-600B STP5NB60 BUK455-60A STP36NE06 BUK455 .. datasheet abstract.. |
95.24 Kb |
17 Pages
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First line: Linear Linear Excellence POWER MOSFET IRF540 Advance Information Description Linear MOSFETs provide Abstract: .. POWER MOSFET IRF540. Advance Information. Ordering Information Device Package Temp. IRL540T TO-220 0 to 150°C. IRL540S TO-263 D2 0 to 150°C. Absolute Maximum Rating Parameter Max Unit. ID@ TC =25 .. datasheet abstract.. |
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First line: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L Abstract: .. RFP22N10 IRF540 HARRIS. RFP18N10 STP20NE10 HARRIS. RFG40N10 STW50N10 HARRIS. RFP40N10 STP50NE10 HARRIS. RFP10N12 STP50NE10 HARRIS. RFP15N15 STP19NB20 HARRIS. Sales type. 4. ST. Replacement. ST. Nearest .. datasheet abstract.. |
558.34 Kb |
29 Pages |
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First line: Application Hint Micrel Application Hint Designing with MIC3832 / 3833 Kevin Lynn Introduction MIC3832 Abstract: .. The main PWM switching element is an IRF540, with gate drive provided by transformer T1. The two 50% duty cycle outputs each drive an IRF540 directly, which in turn drive their respective sides .. datasheet abstract.. |
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First line: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs either industry Abstract: .. IRF540 IRF540 MTP33N10E. IRF540A MTP40N10E. IRF550A MTP40N10E. IRF610 IRF610 MTP7N20E. IRF610A MTP7N20E. IRF614 MTP3N25E. IRF614A MTP3N25E. IRF620 IRF620 MTP20N20E. IRF620A MTP20N20E. IRF624 MTP9N25E .. datasheet abstract.. |
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First line: PRODUCT PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT Update Notification TITLE Abstract: .. PART BUZ80A IRF510 IRF520 IRF530 IRF540 IRF610 IRF630 IRF640 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 IRF840 MLP1N06CL MLP2N06CL MTB10N40E MTB10N40ET4 MTB1306 MTB1306T4 MTB15N06V MTB15N06VT4 .. datasheet abstract.. |
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First line: Power MOSFET HARRIS Power MOSFET. Power MOSFET Mega R . 220AB IRFD1Z2 IRFD112 Abstract: .. 28,0 0,077 IRF140 IRF540 40,0 0,055 IRF150 IRFP150 200 0,45 2,4IRFD212 0,80 0,8IRFD220 3,3 1,5 IRF610 5,0 0,8 IRF220 IRF620 9,0 0,4 IRF230 IRF630 18,0 0,18 IRF240 IRF640 33,0 0,085 .. datasheet abstract.. |
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First line: MIC3832 / 3833 Micrel MIC3832 / 3833 Current-Fed Controllers Recommended Designs General Description MIC3832 MIC3833 unique Abstract: .. The main PWM switching element is an IRF540, with gate drive provided by transformer T1. The two 50% duty cycle outputs each drive an IRF540 directly, which in turn drive respective sides of T2 .. datasheet abstract.. |
103.42 Kb |
10 Pages |
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First line: MIC5016 / 5017 Micrel MIC5016 / 5017 Low-Cost Dual High- Low-Side MOSFET Driver Final Information General Abstract: .. IRF540. will go low, which shuts off the MIC5016. When the short is removed, feedback to the input pin insures that the MIC5016 will turn back on. This output can also be level shifted and sent to an .. datasheet abstract.. |
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12 Pages |
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First line: MIC5016 / 5017 Micrel MIC5016 / 5017 Low-Cost Dual High- Low-Side MOSFET Driver General Description MIC5016 Abstract: .. IRF540. will go low, which shuts off the MIC5016. When the short is removed, feedback to the input pin insures that the MIC5016 will turn back on. This output can also be level shifted and sent to an .. datasheet abstract.. |
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First line: Reference Design SLUU095 OCtober UC3578 Telecom Buck Converter Reference Design Mark Dennis Abstract: .. MOSFETs generally step from 60 V to 100 V, select a member of the IRF520, IRF530, IRF540 family which is rated for 100 V. This requires estimation of the conduction and switching losses following .. datasheet abstract.. |
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First line: LT4256-3 Positive High Voltage Swap Controller with Open-Circuit Detect FEATURES Description Allows Abstract: .. IRF540. D1 CMPZ5241BS 11V. D3 MRA4003T3. R3 4.02k. R2 4.02k. R1 64.9k. R7 100TM. R9 4.02k. R6 10TM. R8 36.5k .. IRF540. D1 CMPZ5241BS 11V. R3 4.02k. R2 4.02k. R1 64.9k. R7 100TM. R9 4.02k. R6 1k. R8 36.5k. VOUT 48V 4A. R4 .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document IRF540 / D Advance Information TMOS E-FET. Abstract: .. Order this document by IRF540/D. SEMICONDUCTOR TECHNICAL DATA. TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.077 OHMS. D. S. G. CASE 221A‐06 TO-220AB. Ω Motorola, Inc. 1997. 2 Motorola TMOS Power MOSFET .. datasheet abstract.. |
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First line: MIC5031 Micrel MIC5031 High-Speed High-Side MOSFET Driver Recommended Designs General Description MIC5031 Abstract: .. IRF540. 0.1μF. M 2N5822. 100μF. 100nF. 10k§. 0.01μF§. High-Side Power Switch and Circuit Breaker .. IRF540. 0.1μF. M 2N5822. 100μF. 100nF. 0.01μF 10k. Figure 1. Enable Application. Refer to “Typical .. datasheet abstract.. |
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First line: Philips Semiconductors Philips Semiconductors Voltage PowerMOS Component IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D Abstract: .. IRF540 100 0.0770 28 TO-220 IRF540 100 0.0700 23 better. IRF540N 100 0.0440 33 TO-220 PHP34NQ10T 100 0.0400 34 better. IRF540NS 100 0.0520 33 D. 2 PAK PHB27NQ10T 100 0.0510 28 better. IRF630 200 0.4000 .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document IRF540 / D Product Preview TMOS E-FET. Abstract: .. Order this document by IRF540/D. SEMICONDUCTOR TECHNICAL DATA. TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS. D. S. G. CASE 221A‐09 TO-220AB. Ω Motorola, Inc. 1998. 2 Motorola TMOS Power MOSFET .. datasheet abstract.. |
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First line: MIC5014 / 5015 Micrel MIC5014 / 5015 Low-Cost High- Low-Side MOSFET Driver Final Information General Description Abstract: .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. OSRAM HLX64623. MIC5014. Control Input. OFF. ON. 1. 2. 3. 4 .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. Guardian Electric 1725-1C-12D. MIC5014. 1. 2. 3. 4. 8. 7. 6 .. datasheet abstract.. |
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First line: Application Hint Micrel Application Hint Logic Controlled Power Switch Wolbert Introduction battery Abstract: .. to 32V, replace the “logic level” FET with a standard gate N-Channel DMOS FET, such as the IRF540, BUZ1LS2, or the SMP60N05. Regardless of the FET employed, the MIC5011 allows power control from .. datasheet abstract.. |
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First line: MIC5014 / 5015 Micrel MIC5014 / 5015 Low-Cost High- Low-Side MOSFET Driver General Description MIC5014 MIC5015 Abstract: .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. OSRAM HLX64623. MIC5014. Control Input. OFF. ON. 1. 2. 3. 4 .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. Guardian Electric 1725-1C-12D. MIC5014. 1. 2. 3. 4. 8. 7. 6 .. datasheet abstract.. |
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First line: MIC5014 / 5015 Micrel Inc. MIC5014 / 5015 Low-Cost High- Low-Side MOSFET Driver General Description MIC5014 Abstract: .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. OSRAM HLX64623. MIC5014. Control Input. OFF. ON. 1. 2. 3. 4 .. IRF540. 12V. NC. Gate Gnd. Source. Input. V+ NC. NC. 10μF. Guardian Electric 1725-1C-12D. MIC5014. 1. 2. 3. 4. 8. 7. 6 .. datasheet abstract.. |
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First line: November TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L Abstract: .. IRF540 100 0.077 30. TO-220. 2. Device. VDSS RDS on max ID cont Remarks. V Ω A STS4PDF30L -30 0 .. datasheet abstract.. |
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First line: MIC5021 Micrel MIC5021 High-Speed High-Side MOSFET Driver General Description MIC5021 high-side MOSFET Abstract: .. Electrical Characteristics TA = 25°C, Gnd = 0V, VDD = 12V, CT = Open, Gate CL = 1500pF IRF540 MOSFET unless otherwise specified Symbol Parameter Condition Min Typ Max Units. D.C. Supply Current .. datasheet abstract.. |
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First line: Given recent trends semiconductor industry continuous market cycles product availability ensure world Abstract: .. TIP35C IRF540 2N3055 BAR43. 1.5KE3ARL SMAJ10A. ST62TXX 27C256 27512 93C46. Standard Products. W h a t i s y o u r r i s k w i t h. What is a Standard Product. In-house Manufacturing. L o w C o s t o f O w n e r s h i p. Low Lead .. datasheet abstract.. |
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First line: APPLICATION NOTE U-167 Mark Dennis UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD U-167 Abstract: .. generally step from 60V to 100V we will select a member of the IRF520, IRF530, IRF540 family which is rated for 100V. To do this requires estimation of the conduction and switching losses following .. datasheet abstract.. |
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First line: Application Note AN-1038 Voltage Supply Dimmable Ballast Lamp Peter Green Senior Lighting Abstract: .. The MOSFETs used in this example are type IRF540, which have a Vdss rating of 100V and Rds on of 0.044? at 25oC. The peak drain voltage is 60V plus the transient produced by the leakage inductance .. datasheet abstract.. |
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First line: MIC5021 Micrel MIC5021 High-Speed High-Side MOSFET Driver Final Information General Description MIC5021 Abstract: .. Electrical Characteristics TA = 25°C, Gnd = 0V, VDD = 12V, CT = Open, Gate CL = 1500pF IRF540 MOSFET unless otherwise specified Symbol Parameter Condition Min Typ Max Units. D.C. Supply Current .. datasheet abstract.. |
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First line: MIC5021 Micrel Inc. MIC5021 High-Speed High-Side MOSFET Driver General Description MIC5021 high-side Abstract: .. Electrical Characteristics TA = 25°C, Gnd = 0V, VDD = 12V, CT = Open, Gate CL = 1500pF IRF540 MOSFET unless otherwise specified Symbol Parameter Condition Min Typ Max Units. D.C. Supply Current .. datasheet abstract.. |
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First line: Application Report SLEA038 July Implementation Power Supply Volume Control Tomas Bruunshuus ABSTRACT Abstract: .. Q701 IRF540. Q706 IRF540. Q707 IRF540. R758 510R. R759 510R. 220p C756. 220p C751. 100p. C755. 82R. R750. 5k6 .. datasheet abstract.. |
297.25 Kb |
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First line: MIC5021 Micrel MIC5021 High-Speed High-Side MOSFET Driver General Description MIC5021 high-side MOSFET Abstract: .. Electrical Characteristics TA = 25°C, Gnd = 0V, VDD = 12V, CT = Open, Gate CL = 1500pF IRF540 MOSFET unless otherwise specified Symbol Parameter Condition Min Typ Max Units. D.C. Supply Current .. datasheet abstract.. |
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First line: BUZ71 BUZ71FI CHANNEL ENHANCEMENT MODE POWER TRANSISTORS TYPE BUZ71 BUZ71FI TYPICAL RDS on Abstract: .. IRF540 IRF540FI. N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. ■ TYPICAL RDS on = 0.045 Ω. ■ AVALANCHE RUGGED TECHNOLOGY. ■ 100% AVALANCHE TESTED. ■ REPETITIVE AVALANCHE DATA AT 100 o C. ■ LOW GATE .. datasheet abstract.. |
2173.51 Kb |
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First line: MIC5020 Micrel MIC5020 Current-Sensing Low-Side MOSFET Driver Final Information General Description MIC5020 Abstract: .. N-Channel Power MOSFET IRF540 V+ MIC5020. 1. 2. 3. 4. 8. 7. 6. 5. 10μF. Incandescent Lamp #1157 +11V to +12V “ ” values apply to demo circuit. See text. Figure 1. Lamp Driver with Current Sensing. A lamp .. datasheet abstract.. |
63.87 Kb |
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First line: MIC5020 Micrel Inc. MIC5020 Current-Sensing Low-Side MOSFET Driver General Description MIC5020 low-side Abstract: .. N-Channel Power MOSFET IRF540 V+ MIC5020. 1. 2. 3. 4. 8. 7. 6. 5. 10μF. Incandescent Lamp #1157 +11V to +12V “ ” values apply to demo circuit. See text. Figure 1. Lamp Driver with Current Sensing. A lamp .. datasheet abstract.. |
182.05 Kb |
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