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IRF5210STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 visit Digikey Buy
IRF5210STRRPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 visit Digikey Buy
IRF5210SPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 visit Digikey Buy
AUIRF5210STRL Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 visit Digikey Buy

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Part : AUIRF5210S Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,500 Best Price : $1.49 Price Each : $1.69
Part : AUIRF5210STRL Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.49 Price Each : $1.69
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Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 4,400 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,050 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 5,486 Best Price : $0.9340 Price Each : $2.12
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.09 Price Each : $1.19
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 607 Best Price : $0.9340 Price Each : $2.12
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : - Best Price : $0.9740 Price Each : $1.12
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 613 Best Price : $1.20 Price Each : $2.02
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 1,353 Best Price : $1.13 Price Each : $1.33
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 629 Best Price : $1.68 Price Each : $1.89
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 37,600 Best Price : $0.96 Price Each : $0.96
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 800 Best Price : $0.86 Price Each : $0.86
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 1 Best Price : $1.51 Price Each : $1.69
Part : IRF5210S Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 31 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 437 Best Price : - Price Each : -
Part : IRF5210STRL Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 763 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 750 Best Price : £0.6720 Price Each : £1.0340
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 233 Best Price : £1.24 Price Each : £1.35
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 174 Best Price : £1.24 Price Each : £2.39
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 185 Best Price : £0.7440 Price Each : £1.02
Part : IRF5210SPBF Supplier : - Manufacturer : basicEparts Stock : 292 Best Price : - Price Each : -
Part : IRF5210S Supplier : International Rectifier Manufacturer : ComSIT Stock : 39 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : International Rectifier Manufacturer : ComSIT Stock : 220 Best Price : - Price Each : -
Part : IRF5210STRL Supplier : International Rectifier Manufacturer : ComSIT Stock : 545 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 750 Best Price : $1.0361 Price Each : $1.1082
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 12,800 Best Price : $0.9868 Price Each : $1.0555
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 650 Best Price : $1.0378 Price Each : $1.6719
Part : AUIRF5210STRL Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 605 Best Price : $2.21 Price Each : $3.00
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,082 Best Price : $0.9830 Price Each : $2.26
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,056 Best Price : $1.09 Price Each : $2.39
Part : IRF5210STRLHR Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 4,000 Best Price : $0.4920 Price Each : $0.4920
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 1,261 Best Price : $1.09 Price Each : $2.38
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,400 Best Price : $0.9350 Price Each : $1.26
Part : AUIRF5210STRL Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 795 Best Price : $2.29 Price Each : $2.6640
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 4,676 Best Price : $1.14 Price Each : $2.7120
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 132 Best Price : $1.09 Price Each : $2.5840
Part : AUIRF5210STRL Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 795 Best Price : £1.58 Price Each : £1.82
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 2,624 Best Price : £0.7480 Price Each : £1.59
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 1,588 Best Price : £1.23 Price Each : £1.68
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 100 Best Price : $1.94 Price Each : $1.94
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 1,600 Best Price : $1.04 Price Each : $1.04
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 800 Best Price : $1.04 Price Each : $1.04
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IRF5210S Datasheet

Part Manufacturer Description PDF Type
IRF5210S International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Standard Packaging Original
IRF5210S International Rectifier HEXFET Power MOSFET Original
IRF5210S Toshiba Power MOSFETs Cross Reference Guide Original
IRF5210SPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging Original
IRF5210SPBF International Rectifier Original
IRF5210STRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRF5210STRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Left Packaging Original
IRF5210STRLPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK Original
IRF5210STRLPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging shipped on Tape and Reel Left Original
IRF5210STRR International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRF5210STRR International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Right Packaging Original
IRF5210STRRPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK Original

IRF5210S

Catalog Datasheet MFG & Type PDF Document Tags

IRF5210L

Abstract: IRF5210S ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile , . Max. Units ­­­ ­­­ 0.75 40 °C/W 5/13/98 IRF5210S/L Electrical Characteristics @ , recommended footprint and soldering techniques refer to application note #AN-994. IRF5210S/L 1000 1000 , ) Fig 4. Normalized On-Resistance Vs. Temperature IRF5210S/L 20 5000 C , Capacitance (pF
International Rectifier
Original
IRF5210L IRF5210S/L

IRF5210L

Abstract: IRF5210S PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF5210S/L Electrical , Electronic-Library Service CopyRight 2003 IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V
International Rectifier
Original

irf5210s

Abstract: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , 1 08/04/09 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified , recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF5210S
International Rectifier
Original
IRF5210SP IRF5210LP IRF5210S/LP EIA-418
Abstract: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , in a wide variety of other applications. D S G S D G D2Pak IRF5210SPbF D TO , °C/W â'"â'"â'" 1 08/04/09 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless , application note #AN-994. www.irf.com IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID International Rectifier
Original

irf5210s

Abstract: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , /06 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter , recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF5210S
International Rectifier
Original
Abstract: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , /dt e Typ. g Max. Units ­­­ 0.75 40 °C/W ­­­ 1 IRF5210S/LPbF , refer to application note #AN-994. IRF5210S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are International Rectifier
Original

IRF5210

Abstract: IRF5210S PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V
International Rectifier
Original
IRF5210

IRF5210S

Abstract: IRF5210L PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06 G Fifth , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L Package Outline TO-262 Outline Part Marking Information TO-262 International
International Rectifier
Original
Abstract: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , in a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S , 40 °C/W â'"â'"â'" 1 09/23/05 IRF5210S/LPbF Electrical Characteristics @ TJ = 25 , application note #AN-994. www.irf.com IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID International Rectifier
Original

IRF5210L

Abstract: IRF5210S PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V
International Rectifier
Original

IRF5210

Abstract: IRF5210S Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET , Sheet IRF5210S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS , Order Revision Date 9/9/96 Previous Datasheet Index Next Data Sheet IRF5210S 1000 , Previous Datasheet Index Next Data Sheet IRF5210S 5000 C , C a p a c ita n c e (p F ) C , IRF5210S 40 RD VDS D.U.T. RG + -ID , D ra i n C u rre n t (A m p s ) VGS 30 VDD
International Rectifier
Original
IRF530S

IRF5210L

Abstract: IRF5210S PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 , DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRF5210S/L Tape & Reel
International Rectifier
Original
F530S

f5210s

Abstract: °c/w 10/30/96 MflSS4S2 0 D E 5 3 5 b IDA IRF5210S International Iö R Rectifier , IRF5210S 100 o en ô o Q -V q s . Dra in-to -S o urce Voltage (V) -V d s â'™ Dra in-to ,   160 1 80 IRF5210S International Iö R Rectifier -VDS , Drain-to-Source Voltage (V) Q g , (Amps) ' IRF5210S V,DO Fig 10a. Switching Time Test Circuit td(on) 25 50 75 100 , Thermal Impedance, Junction-to-Case 4ÃS5452 00253L>0 â  Ã‡' IRF5210S International IOR
-
OCR Scan
f5210s F5210S EIA-41B 4A55452

irf521o

Abstract: ) is available for lowprofile applications. PD -91405C IRF5210S/L HEXFET® Power MOSFET V dss = , . - - Max. 0.75 40 Units °C/W 5/13/98 IRF5210S/L Electrical Characteristics @ T j = , Vs. Temperature IRF5210S/L In te rn a tio n a l IO R Rectifier 1 10 100 -Vos , Impedance, Junction-to-Case IRF5210S/L In te rn a tio n a l IO R Rectifier Us Starting T j , gs = ^or L°9 ' c Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF5210S/L D2Pak
-
OCR Scan
irf521o RF521 IRF521OL

EN 837-1

Abstract: irf5210 . 1.3 40 Units °c/w 8/14/96 IRF5210S Electrical Characteristics @ Tj = 25° C (unless , 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF5210S
-
OCR Scan
EN 837-1 EIA-416

rf4905

Abstract: 1RF9520 International I 0 R Rectifier V (BR)DSS HEXFETR Power MOSFETs *D *D Drain-to-Source K DS(on) Breakdown On-Stale Part Voltage Resistance N um ber (V) (£ ^ Continuous Drain Current 25°C (A) n · Continuous r Rq Pp , ir o,OTt Max. Thermal Max. fcw er 100 Resistance 1 D issipation! (A) (°C/W) (W) Fax on C o« Dem and O bM » Number K®/ Surface Mount Packages P-Channel IRF5305S [RF4905S 1RF9520NS IRF9530N S [RF9540NS IRF5210S -55 -55 -100 -100 -100 -100 0.06 0.02 0.48 0.20
-
OCR Scan
rf4905 1RF9520 rf9540n irf* p-channel sot-223

IRF7205

Abstract: IRF7342 www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: Ids (p) Vd8! Rds (p) Pmax Kopnyc [A] [B] [Om] [Br] BSS84 -0,13 -50 10 0,36 SOT23 BSS92 -0,15 -240 20 1 T092 BS250 -0,25 -45 14 0,83 T092 BSS83 -0,33 -60 2 0,36 SOT23 IRF5210S -0,4 -100 0,06 3,8 T0263 IRFD9210 -0,4 -200 3 1 DIP4 IRFD9220 -0,6 -200 1,5 1 DIP4 IRFD9110 -0,7 -100 1,2 1,3 DIP4 IRFD9120 -1 -100 0,6 1,3 DIP4 IRFD9014 -1,1 -60 0,5 1,3 DIP4 BSP315P -1
-
OCR Scan
IRF7342 IRF7205 IXTH7P50 IRFR9024N IRF9540N T0-220AB BSS83 P IRFD9024 IRF9610 T0220AB IRFL9014 IRF9620 IRF9630

to-247 to-220 to-3p

Abstract: IXTA52P10P - FQB34P10 IR - IRF5210S/L IXYS IXTA52P10P yielded the highest Repetitive Avalanche Energy
IXYS
Original
to-247 to-220 to-3p IXTA36P15P IXTA10P50P IXTQ52P10P sot-227 footprint ixtq

T0252AA

Abstract: T0263 -40 0,06 200 T0220AB IRF5210S -100 -0,4 0,06 3,8 T0263 IRF9510 -100 -4 1,2 43 T0220AB IRF9520 -100
-
OCR Scan
SI4465DY IRF7204 IRF7304 IRF7406 IRF4905 IRF5305 T0252AA IRFR5305 P-MOSFET 36 sot23 dip4 SI4965DY SI4963DY SI9430DY

LL110

Abstract: IRFR1205 equivalent IRF5210S 91405 0.082 IRF3315S 91617 0.042 -150 V IRF9530NS 0.117 150 V 0.200
International Rectifier
Original
IRLMS1503 IRF9640S LL110 IRFR1205 equivalent IRLL014N IRLR2905 SMD IRF7341 application note International Rectifier, IRFR9220 datasheet IRLML2402 IRL3302S IRL3202S IRL3102S IRL3402S IRL3502S

p-CHANNEL POWER MOSFET 600v

Abstract: IXTH20P50P IXTA52P10P Ear(mJ)(max) Fairchild - FQB34P10 IR - IRF5210S/L 300 250 200 200 IXYS , ) 160 Ear(mJ)(max) 160 120 140 - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L IXYS 120 85
IXYS
Original
p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T P channel MOSFET 10A 014 IR MOSFET Transistor P-Channel MOSFET 600v

AASN

Abstract: list of P channel power mosfet SUGGESTED MAXIM PART 0.5 IRF9540NS MAX5902AAEUT 1 IRF9540NS MAX5902ABEUT 2 IRF5210S MAX5902ABEUT 3 IRF5210S MAX5902ACEUT VIN = +9V to +72V
Maxim Integrated Products
Original
MAX5902 6-SOT23 MAX5903 IRFR5410 JW050A1 AASN list of P channel power mosfet MAX5903AAEUT
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