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Part : AUIRF5210S Supplier : Infineon Technologies Manufacturer : Avnet Stock : 3,000 Best Price : $1.5908 Price Each : $3.0264
Part : AUIRF5210STRL Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.5006 Price Each : $1.7017
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 6,350 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 8,340 Best Price : $1.0102 Price Each : $2.0564
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.1487 Price Each : $1.28
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.7039 Price Each : $0.7843
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.9775 Price Each : $1.3179
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.8450 Price Each : $0.8492
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.7039 Price Each : $0.7843
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.8462 Price Each : $0.8547
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 274 Best Price : $0.6820 Price Each : $1.83
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 800 Best Price : $1.12 Price Each : $1.12
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 318 Best Price : $1.23 Price Each : $3.30
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 625 Best Price : $0.84 Price Each : $1.10
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 20,800 Best Price : $0.83 Price Each : $0.83
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 756 Best Price : $0.90 Price Each : $1.10
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 1 Best Price : $0.90 Price Each : $1.10
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.83 Price Each : $0.83
Part : IRF5210S Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 31 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 437 Best Price : - Price Each : -
Part : IRF5210STRL Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 763 Best Price : - Price Each : -
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 350 Best Price : £0.8690 Price Each : £1.0770
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 674 Best Price : £1.12 Price Each : £1.90
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 775 Best Price : £0.9380 Price Each : £1.9140
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 450 Best Price : $0.8986 Price Each : $0.9612
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 4,000 Best Price : $0.8986 Price Each : $0.9612
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 303 Best Price : $0.9533 Price Each : $1.3355
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,272 Best Price : $1.15 Price Each : $2.54
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 5,529 Best Price : $0.7570 Price Each : $0.92
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 390 Best Price : $0.99 Price Each : $1.46
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 13,600 Best Price : $0.8570 Price Each : $1.25
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 1,415 Best Price : $1.15 Price Each : $2.54
Part : IRF5210STRRPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 1,600 Best Price : $0.9240 Price Each : $2.08
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 1,541 Best Price : $1.46 Price Each : $3.4080
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : - Best Price : $1.97 Price Each : $3.4080
Part : IRF5210SPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 2,248 Best Price : £0.9470 Price Each : £2.00
Part : IRF5210STRLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 628 Best Price : £0.96 Price Each : £2.00
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IRF5210S Datasheet

Part Manufacturer Description PDF Type
IRF5210S International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Standard Packaging Original
IRF5210S International Rectifier HEXFET Power MOSFET Original
IRF5210S Toshiba Power MOSFETs Cross Reference Guide Original
IRF5210SPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging Original
IRF5210SPBF International Rectifier Original
IRF5210STRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRF5210STRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Left Packaging Original
IRF5210STRLPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF5210S with Lead Free Packaging shipped on Tape and Reel Left Original
IRF5210STRLPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK Original
IRF5210STRR International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRF5210STRR International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF5210S with Tape and Reel Right Packaging Original
IRF5210STRRPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A D2PAK Original

IRF5210S

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile , . Max. Units ­­­ ­­­ 0.75 40 °C/W 5/13/98 IRF5210S/L Electrical Characteristics @ , recommended footprint and soldering techniques refer to application note #AN-994. IRF5210S/L 1000 1000 , ) Fig 4. Normalized On-Resistance Vs. Temperature IRF5210S/L 20 5000 C , Capacitance (pF International Rectifier
Original
IRF5210L IRF5210S/L
Abstract: PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF5210S/L Electrical , Electronic-Library Service CopyRight 2003 IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V International Rectifier
Original
Abstract: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , 1 08/04/09 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified , recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF5210S International Rectifier
Original
IRF5210SP IRF5210LP IRF5210S/LP EIA-418
Abstract: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , in a wide variety of other applications. D S G S D G D2Pak IRF5210SPbF D TO , °C/W â'"â'"â'" 1 08/04/09 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless , application note #AN-994. www.irf.com IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID International Rectifier
Original
Abstract: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , /06 IRF5210S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter , recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF5210S International Rectifier
Original
Abstract: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S TO , /dt e Typ. g Max. Units ­­­ 0.75 40 °C/W ­­­ 1 IRF5210S/LPbF , refer to application note #AN-994. IRF5210S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are International Rectifier
Original
Abstract: PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V International Rectifier
Original
IRF5210
Abstract: PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06 G Fifth , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L Package Outline TO-262 Outline Part Marking Information TO-262 International International Rectifier
Original
Abstract: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced , Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D , in a wide variety of other applications. D G D S G D2Pak IRF5210SPbF D S , 40 °C/W â'"â'"â'" 1 09/23/05 IRF5210S/LPbF Electrical Characteristics @ TJ = 25 , application note #AN-994. www.irf.com IRF5210S/LPbF 1000 1000 100 BOTTOM TOP -ID International Rectifier
Original
Abstract: PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V , IRF5210S/L 20 5000 C , Capacitance (pF) C iss V GS C iss C rs s C o ss = = = = 0V International Rectifier
Original
Abstract: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET , Sheet IRF5210S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS , Order Revision Date 9/9/96 Previous Datasheet Index Next Data Sheet IRF5210S 1000 , Previous Datasheet Index Next Data Sheet IRF5210S 5000 C , C a p a c ita n c e (p F ) C , IRF5210S 40 RD VDS D.U.T. RG + -ID , D ra i n C u rre n t (A m p s ) VGS 30 VDD International Rectifier
Original
IRF530S
Abstract: PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l , IRF5210S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , IRF5210S/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 , DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRF5210S/L Tape & Reel International Rectifier
Original
F530S
Abstract: °c/w 10/30/96 MflSS4S2 0 D E 5 3 5 b IDA IRF5210S International Iö R Rectifier , IRF5210S 100 o en ô o Q -V q s . Dra in-to -S o urce Voltage (V) -V d s â'™ Dra in-to ,   160 1 80 IRF5210S International Iö R Rectifier -VDS , Drain-to-Source Voltage (V) Q g , (Amps) ' IRF5210S V,DO Fig 10a. Switching Time Test Circuit td(on) 25 50 75 100 , Thermal Impedance, Junction-to-Case 4ÃS5452 00253L>0 â  Ã‡' IRF5210S International IOR -
OCR Scan
f5210s F5210S EIA-41B 4A55452
Abstract: ) is available for lowprofile applications. PD -91405C IRF5210S/L HEXFET® Power MOSFET V dss = , . - - Max. 0.75 40 Units °C/W 5/13/98 IRF5210S/L Electrical Characteristics @ T j = , Vs. Temperature IRF5210S/L In te rn a tio n a l IO R Rectifier 1 10 100 -Vos , Impedance, Junction-to-Case IRF5210S/L In te rn a tio n a l IO R Rectifier Us Starting T j , gs = ^or L°9 ' c Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF5210S/L D2Pak -
OCR Scan
irf521o RF521 IRF521OL
Abstract: . 1.3 40 Units °c/w 8/14/96 IRF5210S Electrical Characteristics @ Tj = 25° C (unless , 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF5210S -
OCR Scan
EN 837-1 EIA-416
Abstract: International I 0 R Rectifier V (BR)DSS HEXFETR Power MOSFETs *D *D Drain-to-Source K DS(on) Breakdown On-Stale Part Voltage Resistance N um ber (V) (£ ^ Continuous Drain Current 25°C (A) n · Continuous r Rq Pp , ir o,OTt Max. Thermal Max. fcw er 100 Resistance 1 D issipation! (A) (°C/W) (W) Fax on C o« Dem and O bM » Number K®/ Surface Mount Packages P-Channel IRF5305S [RF4905S 1RF9520NS IRF9530N S [RF9540NS IRF5210S -55 -55 -100 -100 -100 -100 0.06 0.02 0.48 0.20 -
OCR Scan
rf4905 1RF9520 rf9540n irf* p-channel sot-223
Abstract: www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: Ids (p) Vd8! Rds (p) Pmax Kopnyc [A] [B] [Om] [Br] BSS84 -0,13 -50 10 0,36 SOT23 BSS92 -0,15 -240 20 1 T092 BS250 -0,25 -45 14 0,83 T092 BSS83 -0,33 -60 2 0,36 SOT23 IRF5210S -0,4 -100 0,06 3,8 T0263 IRFD9210 -0,4 -200 3 1 DIP4 IRFD9220 -0,6 -200 1,5 1 DIP4 IRFD9110 -0,7 -100 1,2 1,3 DIP4 IRFD9120 -1 -100 0,6 1,3 DIP4 IRFD9014 -1,1 -60 0,5 1,3 DIP4 BSP315P -1 -
OCR Scan
IRF7342 IRF7205 IXTH7P50 IRFR9024N IRF9540N T0-220AB IRFD9024 IRF9610 T0220AB IRFL9014 IRF9620 IRF9630
Abstract: - FQB34P10 IR - IRF5210S/L IXYS IXTA52P10P yielded the highest Repetitive Avalanche Energy IXYS
Original
to-247 to-220 to-3p IXTA36P15P sot-227 footprint IXTQ52P10P ixtq IXTA10P50P
Abstract: -40 0,06 200 T0220AB IRF5210S -100 -0,4 0,06 3,8 T0263 IRF9510 -100 -4 1,2 43 T0220AB IRF9520 -100 -
OCR Scan
SI4465DY SI4965DY IRF7204 SI4963DY IRF7406 IRF5305 T0252AA IRFR5305 P-MOSFET IRF7304 SI9430DY
Abstract: IRF9520NS 91522 IRF9530NS 91523 IRF9540NS 91483 IRF5210S 91405 Y IRF3315S 91617 IRF3415S 91509 Y IRFL210 International Rectifier
Original
IRF7207 LL110 IRL32 IRFR9024 IRFR024N IRF7389 IRF7233 IRF7220 IRLML2402 IRF7501/7 IRLMS1902
Abstract: IXTA52P10P Ear(mJ)(max) Fairchild - FQB34P10 IR - IRF5210S/L 300 250 200 200 IXYS , ) 160 Ear(mJ)(max) 160 120 140 - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L IXYS 120 85 IXYS
Original
p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A P-Channel MOSFET 600v
Abstract: SUGGESTED MAXIM PART 0.5 IRF9540NS MAX5902AAEUT 1 IRF9540NS MAX5902ABEUT 2 IRF5210S MAX5902ABEUT 3 IRF5210S MAX5902ACEUT VIN = +9V to +72V Maxim Integrated Products
Original
MAX5902 6-SOT23 MAX5903 IRFR5410 JW050A1 AASN list of P channel power mosfet MAX5903AAEUT
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