NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PD - 91280D 91280D IRF4905 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Description , Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period , Inductor Curent Ripple 5% * VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel ... | Original |
9 pages, |
ISS 99 diode datasheet 91280D IRF4905 P-channel power IRF4905 91280D abstract |
|
|||
| Abstract: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFETо Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175â-'C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V , Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate , Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS To Order [ ISD] Previous Datasheet ... | Original |
8 pages, |
IRF1010 E IRF4905 P-channel power irf1010 applications IRF4905 datasheet abstract |
|
|||
| Abstract: Drive Devices Fig 14. For P-Channel HEXFETS [ ISD] IRF4905 Package Outline TO-220AB Outline , PD - 9.1280C 1280C IRF4905 HEXFETо Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175â-'C Operating Temperature l Fast Switching l P-Channel l Fully , RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. , ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ... | Original |
8 pages, |
irf 930 1280c IRF4905 P-channel power transistor irf4905 IRF4905 IRF4905 equivalent 1280C 1280C abstract |
|
|||
| Abstract: Drive Devices Fig 14. For P-Channel HEXFETS [ ISD] IRF4905 Package Outline TO-220AB Outline , PD - 9.1280C 1280C IRF4905 HEXFETо Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175â-'C Operating Temperature l Fast Switching l P-Channel l Fully , RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. , ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ... | Original |
9 pages, |
IRF4905 P-channel power IRF4905 1280C 1280C abstract |
|
|||
| Abstract: Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ ISD] IRF4905 Package Outline , PD - 9.1280B 1280B IRF4905 PRELIMINARY HEXFETо Power MOSFET Advanced Process Technology Ultra , P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.02 G ID = , Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate , switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the ... | Original |
8 pages, |
1280B irf 930 IRF4905 1280B abstract |
|
|||
| Abstract: 0.7500 9.20 170.00 P-Channel HEXFET ™ Power MOSFETs - D-PAK IRFB9N60A IRFB9N60A†IRFBC40 IRFBC40* 600 1.2000 6.20 , 50.00 IRF614 IRF614* 250 2.0000 2.70 36.00 IRLI2505 IRLI2505 P-Channel 55 0.0080 58.00 63.00 IRF740 IRF740* 400 0.5500 , IRFBG20 IRFBG20* 1000 11.0000 1.40 54.00 Logic Level P-Channel IRFR024N IRFR024N 55 0.0750 16.00 38.00 IRFU024N IRFU024N 55 0.0750 , P-Channel P-Channel IRL530N IRL530N* 100 0.1000 15.00 63.00 IRL520 IRL520* 100 0.2700 9.20 60.00 IRFP9140N IRFP9140N -100 0.1170 , 0.1750 -11.00 38.00 P-Channel IRFR9024 IRFR9024 -60 0.2800 -8.80 42.00 IRFP064N IRFP064N 55 0.0080 98.00 150.00 IRFU9014 IRFU9014 ... | Original |
1 pages, |
irfp250n equivalent IRFBE30 equivalent IRF9640 equivalent irf1010e equivalent datasheet abstract |
|
|||
| Abstract: 42 90522 P-Channel IRFU9014 IRFU9014 www.irf.com Page 11 HEXFET® Power MOSFETs Part Number , 0.28 -1.6 -1.1 120 1.3 90698 P-Channel www.irf.com Page 12 HEXFET® Power , -25 1 150 91405 P-Channel www.irf.com Page 16 HEXFET® Power MOSFETs Part , 370 340 91258 P-Channel Logic Level IRLML5103 IRLML5103 -30 0.6 -0.6 -0.48 370 , 160 780 91508 IRLMS1902 IRLMS1902* 20 0.1 2.2 1.8 160 780 91540 P-Channel ... | Original |
34 pages, |
IRFD9120 IRF3205S irfu9210 irfbf30 IRFPG50 IRFK6H054 IRFK6J054 IRFD110 IRC540 equivalent irf 3250 IRFP260 MOSFET IRF 713 irf 560 IRFK3D450 datasheet abstract |
|
|||
| Abstract: PD - 9.1526A IRFI4905 IRFI4905 HEXFETо Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully , Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V , Curent Ripple 5% * VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS , ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ... | Original |
9 pages, |
IRFI4905 IRF4905 55V MOSFET P-Channel 1526a IRF4905 P-channel power irf 930 IRF4905 equivalent IRFI4905 abstract |
|
|||
| Abstract: PD - 9.1526A IRFI4905 IRFI4905 HEXFETо Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully , Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V , Curent Ripple 5% * VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS , ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ... | Original |
8 pages, |
IRFI4905 IRF4905 R 133 A irf 930 IRF4905 equivalent IRFI4905 abstract |
|
|||
| Abstract: 0.54 91258 P-Channel H1 Logic Level IRLML6302 IRLML6302* -20 0.6 -0.62 -4.8 230 , 91508 P-Channel H2 Logic Level IRLMS6702 IRLMS6702* -20 0.20 -2.3 -1.9 75 1.7 , 91265 IRF7503 IRF7503 30 0.135 2.4 1.9 100 1.25 91266 P-Channel H3 Logic Level , 70 1.8 91264 Dual P-Channel H3 Logic Level IRF7504 IRF7504* -20 0.27 -1.7 -1.4 , 91269 100 1.25 91270 H3 Dual N- and P-Channel Logic Level IRF7507 IRF7507* 0.135 2.4 ... | Original |
31 pages, |
IRLML5103 IRLML2803 IRLML2402 irfuc20 irfu9024 IRFIZ24N IRFR9310 IRLR120N P-Channel IRFP044N IRF4905 equivalent Irf520N IRF7104 IRFP240 irl3302 datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| IRF6215 IRF6215 IRF6215 IRF6215 TO-220 P-Channel -150V -150V -150V -150V 0.290 W IRF6215L IRF6215L IRF6215L IRF6215L TO-262 P-Channel -150V -150V -150V -150V 0.290 W IRF4905 TO-220 P-Channel -55V 0.020 W IRF4905S D 2 Pak P-Channel -55V 0.020 W IRF7416 IRF7416 IRF7416 IRF7416 SO-8 P-Channel International Rectifier - Product Information - Switch Mode Power Supply Low R DS(on) HEXFET ® Power MOSFETs The optimized switch for efficient Board Mounted Power (BMP www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd001c2.htm |
International Rectifier | 06/10/1998 | 10.84 Kb | HTM | wcd001c2.htm |
| example, the new HEXFET IRF4905 is a 55V P-channel device in a TO-220 package with on-resistance of only Vgs gate drive options. Improvements achieved in P-channel HEXFET power MOSFETs are even more significant than in N-channel devices. The new P-channel on-resistance ratings are now about two times an N rectification for power supplies and the cost effective use of P-channel HEXFET devices in high-side switching -channel and P-channel MOSFETs. These HEXFET devices offer maximum Rds(on) ratings down to 6milliohms, the www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd00296.htm |
International Rectifier | 06/10/1998 | 6.42 Kb | HTM | wcd00296.htm |
| (max.) for the P-channel IRF4905. Previous comparable on-resistance ratings were 18 milliohms and 140 . The family will be continuously expanded to offer more than 100 part numbers in both N-channel and P-channel International Rectifier - A Power Semiconductor Company - Latest Updates INDUSTRY'S FIRST FOUR-MASK POWER MOSFET SIMPLIFIES MANUFACTURING BY 30%, IMPROVES PERFORMANCE MORE THAN placed in operation the industry's first power MOSFET transistor fabrication process that requires www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd00298.htm |
International Rectifier | 06/10/1998 | 6.99 Kb | HTM | wcd00298.htm |
| =infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS .SUBCKT irf4905s_IR 1 2 3 * * * Model generated on Dec 18, 96 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Dec 17, 96 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Dec 18, 96 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Dec 10, 96 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/irf.lib |
Spice Models | 18/04/2010 | 666.03 Kb | LIB | irf.lib |
| * Library of IRF Power MOSFET Models * Revision: 1.0 * Author: HIRASUNA * Date: May * * * Model generated on Aug 7, 97 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Aug 8, 97 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Nov 25, 96 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Sep 10, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 www.datasheetarchive.com/files/spicemodels/misc/irf.lib |
Spice Models | 22/06/2007 | 1146.16 Kb | LIB | irf.lib |