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Part : IRF141 Supplier : International Rectifier Manufacturer : Rochester Electronics Stock : 33 Best Price : $2.10 Price Each : $2.10
Part : DIRF14160 Supplier : Thomas & Betts Manufacturer : Sager Stock : - Best Price : $1158.73 Price Each : $1207.02
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IRF141 Datasheet

Part Manufacturer Description PDF Type
IRF141 Intersil 28A and 25A, 80V and 100V, 0.077 and 0.100 ?, N-Channel Power MOSFETs Original
IRF141 Fairchild Semiconductor N-channel power MOSFET, 27 Amp, 60V Scan
IRF141 FCI POWER MOSFETs Scan
IRF141 Frederick Components Power MOSFET Selection Guide Scan
IRF141 General Electric Power Transistor Data Book 1985 Scan
IRF141 Harris Semiconductor Power MOSFET Data Book 1990 Scan
IRF141 International Rectifier N-Channel Power MOSFETs Scan
IRF141 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan
IRF141 Motorola European Master Selection Guide 1986 Scan
IRF141 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
IRF141 Motorola Switchmode Datasheet Scan
IRF141 N/A Semiconductor Master Cross Reference Guide Scan
IRF141 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRF141 N/A FET Data Book Scan
IRF141 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRF141 N/A Shortform Datasheet & Cross References Data Scan
IRF141 National Semiconductor N-Channel Power MOSFETs Scan
IRF141 Samsung Electronics N-CHANNEL POWER MOSFETS Scan
IRF141 Semelab MOS Power Transistor Scan
IRF141 Siliconix MOSPOWER Design Data Book 1983 Scan
Showing first 20 results.

IRF141

Catalog Datasheet MFG & Type PDF Document Tags

IRF140

Abstract: IRF141 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs , NUMBER IRF140 IRF141 IRF142 IRF143 PACKAGE TO-204AE TO-204AE TO-204AE TO-2Q4AE BRAND IRF140 IRF141 IRF142 , 1998 . File Number 2306.2 IRF140, IRF141, IRF142, IRF143 Absolute Maximum Ratings Tc = 25 , . T l 100 -55 to 175 300 100 100 28 20 110 ±20 150 1.0 IRF141 80 80 28 20 110 ±20 150 1.0 100 -55 to , 0V (Figure 10) MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF140, IRF142 IRF141, IRF143
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OCR Scan
to204ae IRF140 HARRIS IRF140 ir TA17421 RF142

IRF140

Abstract: IRF141 Number Vos Ros , 100 - - V Vqs=0V Id=250/ , ) lD(on) IRF140 IRF141 27 - A VDS>lD(on)XRDS(on) max., Vgs=10V IRF142 IRF143 24 - - a Static Drain-Source On-State Resistance (2) Rosfon) IRF140 IRF141 - 0.Ã"6 0.085 0 Vqs=10V, ID=15A IRF142 IRF143 -
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OCR Scan
irf14 IRF140/141/142/143

IRF G40

Abstract: IRF1401 IRF141 IRF142 IRF143 V DS 100V 80V 100V 80V RDS(on) 0.0770 0.0770 0.1000 0.1000 *D 28A 28A 25A 25A , -3 fio o c IRF140, IRF141, IRF142, IRF143 Devices HE D 1 4055455 OOG^OST fl I , Dissipation Linear Derating Factor VGS eas * T-39-13 IRF140, IRF141 28 20 110 150 1.2 ±20 100 (See Fig , ecified ) Parameter B Vpss DraJrvto-Source Breakdown Voltage Type IRF140 IRF142 IRF141 IRF143 R os(on) Static DraJn-to-Source On-State Resistance ® IRF140 IRF141 IRF142 IRF143 *D(on) On-State Drain Current
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OCR Scan
IRF G40 IRF1401 G37 IRF IRF140 IOR irf 044 mosfet 5S455 00QTQ5 SS452 S54S2

power mosfet IRF14

Abstract: IRF140 IRF140 100V 0.0850 27A IRF141 60V 0.085Q 27A IRF142 ' 100V 0.110 24A IRF143 60V 0.110 24A MAXIMUM RATINGS Characteristic Symbol IRF140 IRF141 IRF142 IRF143 Unit Drain-Source Voltage (1) Voss 100 60 100 60 Vdc Drain-Gate , =250/ , Vos=Max. RatingX0.8, Vgs=0V, Tc=125°C On-State Drain-Source Current (2) lD(on) IRF140 IRF141 27 - A VDS , ) Rosfon) IRF140 IRF141 - 0.Ã"6 0.085 0 Vqs=10V, ID=15A IRF142 IRF143 - 0.09 0.11 0 Forward
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OCR Scan
power mosfet IRF14 S-60V

IRF141

Abstract: IRF142 ) PRO DUCT SUM M ARY Part Num ber IR F140 IRF141 IR F142 IR F143 ' Vos 100V 60V 100V 60V Ros , dgr V gs Id Id Idm Igm Pd 27 17 108 27 17 10 8 ± 1 .5 125 1.0 - 5 5 to 1 5 0 300 IRF140 100 100 IRF141 , IRF141 60 IR F143 - 4 .0 100 -1 0 0 250 1000 G ate Threshold Voltage Gate-Source Leakage Forward , Drain-Source Current (2) lD(on) IR F140 27 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 24 - , IR F140 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 ALL M in
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OCR Scan
F140 7964JL42 00GS435 F--13

VN64GA

Abstract: IRF140 IRF151 TO-3 6Cl 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 , 1.4 20 VN2406D Siliconix 1-5 IRF140 â  IRF141 â  IRF142 â  IRF143 IRF540 - IRF541 â  IRF542 â , Part Number BVcss rDS(ON) >d Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11Ã , IRF140,142, 540, 542 . 100V IRF141,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541
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OCR Scan
IRF150 IRF152 VN1000A IRF130 VN1001A IRF132 VN64GA Part number 543 20 018 00 75 LS 541 2N6658 IRF120 IRF122

IRF140

Abstract: IRF142 Standard Power MOSFETs- IRF140, IRF141, IRF142, IRF143 Power MOS Field-Effect Transistors File , DESIGNATION 92CS-37BOI JEDEC TQ-204AE Absolute Maximum Ratings Parameter IRF140 IRF141 IRF142 IRF143 Units , (0.063 in. ( 1,6mm) from case for 10s) °c 3-64. Standard Power MOSFETs IRF140, IRF141, IRF142 , 250|iA IRF141 IRF143 60 - - V Vgs(th) Gate Threshold Voltage ALL 2.0 - 4.0 V VDS = VGS' 'D = 250 , © IRF140 IRF141 27 - - A VDS > 'D(on) * RDS(on) max.' VGS = 10V IRF142 IRF143 24 - - A ^DS(on
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OCR Scan
IFIF141 92CS-3374I IRF1I41 75BV0SS

IRF540

Abstract: irf140 1.2 6.25 VN35AB 1-6 Siliconix IRF140 â  IRF141 â  IRF142 â  IRF143 IRF540 - IRF541 â  IRF542 â , Part Number BVcss rDS(ON) >d Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11Ã , IRF140,142, 540, 542 . 100V IRF141,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541 , DSS Voltage IRF140, 142 IRF540, 542 100 V Vqs = 0, Id = 250MA IRF141, 143 IRF541, 543 60 vGS
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OCR Scan
IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 irf540 27 MHz VN0600D IRF631

TP8N10

Abstract: th15n20 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF240 IRF241 IRF242 IRF243 , BUZ71FI BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 , SGSP574 SGSP579 SGSP575 SGSP575 SG SP577 SG SP577 IRF350 IRF350 IRF451 IRF450 IRF142 IRF142 IRF141 IRF141 , IRF142 IRF141 IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830
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OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312

IRF732P

Abstract: IRF722P BUZ71P BUZ72A BUZ73A BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 , BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 , IRF142 IRF142 IRF141 IRF141 IRF140 IRF140 SGSP592 SGSP591 IRF721 IRF720 SGSP330 SGSP319 IRF721 IRF720 , S G S -TH O M S O N S G S -TH O M S O N N E A R E S T IRF451 SGSP577 SGSP577 IRF142 IRF142 IRF141 IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830 IRF743 IRF742
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OCR Scan
SGSP321 IRF540FI SGSP381 BUZ71 SGSP369 SGSP3055 IRF732P IRF722P 1rfp450 MTP20N10 irf522p 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

IRF142

Abstract: IRF140 / = 7 SGS-THOMSON RíflO»ilL[lOT®ROD©S IRF 140 - 141 IRF 142 - 143 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF140 IRF141 IRF142 IRF143 · · · · VD S S 100 V 80 V 100 V 80 V , leakage current (VDS = 0) lD = 250 /xA for IRF140/IRF142 for IRF141/IRF143 VGS= 0 100 80 Tc = 125°C 250 , ) ^D(on) Gate threshold voltage V p s - ^G S On-state drain current for IRF140/IRF141 for IRF142 , ) Static drain-source on resistance VGS= 10 V for IRF140/IRF141 for IRF142/IRF143 lD= 17 A 0.077
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OCR Scan
IRF 142

IRF141

Abstract: IRF142 S 7 SGS-THOMSON ilLltgTTlMIDtgl J m T M IRF 140 -141 IRF 1 4 2 - 1 4 3 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF140 IRF141 IRF142 IRF143 · · · · V DSS R DS(on) 'd 100 V , IRF141/IRF143 VGS= 0 100 80 Tc = 125°C V V /x A bss ·g s s VDS= Max Rating VDS= Max Rating x , ^D S - ^G S *D - 250 10 V 2 28 25 V DS > ta (on) x R DS(on) for IRF140/IRF141 for , /IRF141 for IRF142/IRF143 lD= 17 A 0.077 0.100 n Q DYNAMIC 9fs * Forward transconductance
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OCR Scan
IRF 140
Abstract: 100 V 0.077 fi 0.077 fi 0.100 fi 0.100 fi 28 A IRF141 100 V IRF143 â'¢ â'¢ â , Draln-source breakdown voltage lD= 250 iiA for IRF140/IRF142 for IRF141/IRF143 Idss Zero gate , 10V S Static drain-source on resistance VGS= 10 V for IRF140/IRF141 for IRF142/IRF143 A A 28 25 for IRF140/IRF141 for IRF142/IRF143 R d S (on) 2 lD= 17 A 0.077 0.100 n -
OCR Scan
7TSTE37

IRF540

Abstract: irf540 TTL Requirements â'¢ Ease of Paralleling Product Summary TO-22QAB IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 , ft 27 A 17 A TO-204AE IRF141 60 V 0.085 ft 27 A 17 A IRF142 100 V 0.11 n 24 A 15 A IRF143 60 V , Characteristic Rating IRF140/142 IRF540/542 Rating IRF141/143 IRF541/543 Unit Voss Drain to Source Voltage1 100 , (br)dss Drain Source Breakdown Voltage1 IRF140/142/540/542 IRF141/143/541/543 V Vgs = 0 V, lD = 250
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OCR Scan
IRF543 irf540 TTL IRF5405 LEM 543 24A15 IRF140-143 irf540 circuit diagram IRF140-143/IRF540-543 TQ-220AB IRF141/143

irf540 equivalent

Abstract: IRF541 equivalent IRF140 â  IRF141 â  IRF142 â  IRF143 IRF540 - IRF541 â  IRF542 â  IRF543 S Siliconix 100V , Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11Ã 24A IRF143 60V IRF540 , , 542 . 100V IRF141,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541,543 , DSS Voltage IRF140, 142 IRF540, 542 100 V Vqs = 0, Id = 250MA IRF141, 143 IRF541, 543 60 vGS
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OCR Scan
VN1000D IRF522 IRF232 IRF822 IRF842 IRF422 irf540 equivalent IRF541 equivalent equivalent IRF540 vn89af vn0106n1 VN0109n5

e14B

Abstract: IRF1401 N-CHANNEL POW ER MOSFETs UNITS V V A A A V W N -C H A N N E L EN HANCEM ENT MODE D IRF141 IRF141R 80 80 , Characteristics · High Input Impedance Description The IRF140, IRF141, IRF142, and IRF143 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF140R, IRF141R, IRF142R, and IRF143R types are , CHARACTERISTIC Orain-Source Breakdown Voltage IRF14 0/1 42 , IRF140R/142R IRF141 /1 43, IRF141 R/143R Gate , , IR F143 ¡RF140R, IRF141R, 1RF142R, / RF143R Ip. DRAIN CURRENT (AMPERES) FIGURE 12
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OCR Scan
e14B 141r RF140

IRF1401

Abstract: 1RF141 MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF140 IRF141 IRF142 TMOS POWER FETs 24 and 27 AMPERES rDS(on) = 0-085 OHM 60 and 100 VOLTS rDS(on) = 0.11 OHMS 100 VOLTS P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are designed fo r lo w , IRF141 Symbol Min Max Unit V (BR)DSS 100 60 'D S S Tj V dc - Z e ro G ate V o lta g , d c , 1d = 1 5 A d c ) IRF140, 1RF141 IRF142 1® V) IRF140, IRF141 IRF142 9FS IRF140, IR F U 1 IRF142
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OCR Scan
IRF1421 MTM25N10

2SK134 equivalent

Abstract: 2sk135 equivalent '" â'" IRF133 60 0.25 TO-3 IRF133 â'" â'" IRF140 100 0.085 TO-3 IRF140 â'" â'" IRF141 60 0.085 TO-3 IRF141 â'" â'" IRF142 100 0.11 TO-3 IRF142 â'" â'" IRF143 60 0.11 TO-3 IRF143 â'" â'" IRF150 100 0.055
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OCR Scan
PWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 2SK132 2SK133 2SK134 equivalent 2sk135 equivalent IRF150 To3 package 2SJ48 equivalent 2SJ50 equivalent HPWR 6501 IRF441 IRF340

irf 150 equivalent

Abstract: 2sk135 equivalent '" â'" IRF133 60 0.25 TO-3 IRF133 â'" â'" IRF140 100 0.085 TO-3 IRF140 â'" â'" IRF141 60 0.085 TO-3 IRF141 â'" â'" IRF142 100 0.11 TO-3 IRF142 â'" â'" IRF143 60 0.11 TO-3 IRF143 â'" â'" IRF150 100 0.055
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OCR Scan
VN4001A IRF223 irf 150 equivalent hitachi 2sk135 IRF331 IRF 50A 2SK134 2SK135 IRF222 2SK175

irf150

Abstract: VN64GA '" â'" IRF133 60 0.25 TO-3 IRF133 â'" â'" IRF140 100 0.085 TO-3 IRF140 â'" â'" IRF141 60 0.085 TO-3 IRF141 â'" â'" IRF142 100 0.11 TO-3 IRF142 â'" â'" IRF143 60 0.11 TO-3 IRF143 â'" â'" IRF150 100 0.055 , 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VN0600A
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OCR Scan
2SK176 IRF830 equivalent 2SK220 2SK221 2SK259 IRF323 2SK260

irf113

Abstract: IRF224 * 25 TO-204AE IRF141 IR N 60 ±20 27 125 ±100 ±20 250 80 2.0 4.0 0. 25 0.085 10 17 28 10 6.0 17 1600 , 100 ±20 27 125 ±100 ±20 250 100 2 4 0. 25 0.085 10 15 27 10 6.0 15 1600 800 300 25 TO-204AE IRF141 , -3 IRF140 SAMSUNG N 100 0.017 28 T0-3 IRF141 SAMSUNG N 80 0.077 28 TO , ±20 250 100 2.0 4.0 0.085 10 _15, 27 10 6.0 15 1600 800 300 25 TO-204AE IRF141 SILICONIX N 60 ±20 27
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OCR Scan
IRF034 IRF035 irf113 IRF224 buz90 buzh F133 1RF9Z32 1RF48 1RF045 T0-204AE
Abstract: Impedance Description Term inal Diagram The IRF140, IRF141, IRF142, and IRF143 are n-channel , ) IRF141 IRF141R IR F142 IRF142R IRF143 IRF143R UNITS 100 100 80 80 100 100 80 , /1 43, IRF141 R /143R Gate Threshold Voltage TYP 80 bvdss MIN TE S T C O NDITIO NS -
OCR Scan
IRF140/141/14 IRF140R/141R/142R/143R 43D2271 RF142R FIGURE14
Showing first 20 results.