500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
IRF520STRR Vishay Siliconix MOSFET N-CH 100V 9.2A D2PAK visit Digikey Buy
IRF520PBF Vishay Siliconix Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRF520SPBF Vishay Siliconix Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey Buy
IRF520NPBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 visit Digikey Buy
IRF520NSPBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRF520NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy

IRF-520 Mosfet

Catalog Datasheet MFG & Type PDF Document Tags

IRF 850 mosfet

Abstract: MOSFET IRF 635 POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 1.3 IRF 711 IRF 2 613 IRF 611 IRF 612 IRF 610 IRF 614 IRF 723 IRF 3 625 IRF 3, IRF 623 ' 4.5 5 -i" " IRF 621 IRF 620 IRF 733 IRF 5.5 IRF 6 IRF 635 IRF 843 IRF 8 523 IRF 9 521 IRF 522 IRF 520 IRF 533 IRF 631 IRF 632 IRF 630 IRF 10 IRF 12 IRF 14 Z22 IRF 16 Z20 IRF Z24 533 IRF 531 IRF 532 IRF 530 IRF 643 -IRF 18 IRF 24 Z30 IRF 27-30 Z30 IRF 35 Z40 , MOSFET TO-3P F/P X" '- V do Id 4 4.5 5 5.5 7 8 9 10 12 13 14 15 16 18 24 25 27 30 33 40 BO FUNCTION
-
OCR Scan

irf5205

Abstract: IRF520 Symbol 520 V DSS V DGR VGS ID 8 5 32 40 0.32 - 5 5 to 150 100 100 521 60 60 522 100 100 ±20 7 4 28 W atts , MOSFET DATA IRF520-523 ELECTRICAL CHARACTERISTICS (Tq = 25°C unless otherw ise noted , (Typ) - nH _ MOTOROLA TMOS POWER MOSFET DATA 3-118
-
OCR Scan
IRF520 IRF521 IRF522 IRF523 irf5205 MTP10N10E

IRF520

Abstract: irf521 S A M S UN G E L E C T R O N I C S INC b4E D 7^4142 DQ 12 15 1 11R SMGK IR F 520/521/522/523 FEATURES · · · · · · · Lower Rds (ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area , = 5.6A, Z o = 1 8 fl (MOSFET switching times are essentially independent of operating temperature , 37 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier J D «41
-
OCR Scan
mosfet irf520 irf520 mosfet TO 521 MH IRF520/521/522/523 GG121S IRF520/521Z522/523

1rf521

Abstract: IBF520-523 issipation @ T ç = 25°C Derate above 25°C O perating and Storage T em perature Range S ym bol 520 VDSS V DGR , . MOTOROLA TMOS POWER MOSFET DATA 3-117 M O T O R O L A SC X S T R S / R F7 * " 3 9 - / / IME D , MOTOROLA TMOS POWER MOSFET DATA 3-118
-
OCR Scan
1rf521 IBF520-523 p10n10e 1003C IRFS20 1RF523 1RF521

IRF Power MOSFET code marking

Abstract: IRFR5305 PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065 G ID = -31A S , contact S ­­­ 1200 ­­­ VGS = 0V ­­­ 520 ­­­ pF VDS = -25V ­­­ 250 ­­­ = 1.0MHz, See Fig. 5 , 71 170 -1.3 110 250 A V ns nC Conditions D MOSFET symbol showing the G integral
International Rectifier
Original
IRF Power MOSFET code marking IRFR5305PBF IRF 100A IRFR5305P IRFU5305P IRF5305 AN-994

DIODE 83A

Abstract: MOSFET IRF 94 PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify , Conditions D MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V ­­­ 110 ­­­ ns TJ = 25°C, IF = 8.3A ­­­ 520
International Rectifier
Original
AN1001 IRFR13N15D IRFU13N15D EIA-541 DIODE 83A MOSFET IRF 94 IRFU120 IRFR13N15DP IRFU13N15DP IRFR/U13N15DP
Abstract: PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify , Min. Typ. Max. Units Conditions D MOSFET symbol 14 â'"â'"â'" â'"â'"â'" showing the A G , S = 8.3A, VGS = 0V Â" C, â'"â'"â'" 110 â'"â'"â'" ns TJ = 25° I F = 8.3A C, â'"â'"â'" 520 International Rectifier
Original
EIA-481

AN1001

Abstract: EIA-541 PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify , Conditions D MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V ­­­ 110 ­­­ ns TJ = 25°C, IF = 8.3A ­­­ 520
International Rectifier
Original
R120 U120 irf 48v mosfet

ELECTRONIC BALLAST 36W circuit diagram

Abstract: capacitor 47uF/400V voltage power MOSFET driver providing two outputs for direct drive of 2 N-channel power MOSFETs arranged , topology with a fixed dead time of 520 ns. Detailed Operation The lamp ballast is powered via a half , MOSFET (Q2) is switched ON, the BRIDGE pin is pulled down to the ground, thus the capacitor connected , the input signal to the high side driver, then it generates a fixed dead time (520 ns) before , Bridge IRF Low Charge N-Channel MOSFET IRF840LC Q1, Q2 BC547B Q3 Generic NPN
ON Semiconductor
Original
NCP5104 ELECTRONIC BALLAST 36W circuit diagram capacitor 47uF/400V circuit diagram electronic ballast for 36W tube T500mA 100uF 400V capacitor capacitor 100MF 100v AND8312/D

irf52 0

Abstract: MOSFET [ /Title (IRF52 0) /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator () /DOCI NFO This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET , From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the , = 50V, ID 9.2A, RG = 18, RL = 5.5 MOSFET Switching Times are Essentially Independent of Operating
Fairchild Semiconductor
Original
irf52 0 TA09594 TB334

1RFP9240

Abstract: irfp 9640 =500 (MOSFET switching times are essentially independent of operating temperature.) Rise Time Tr ALL â'" â , IRFP9130/1 IRF9530/1 - - -12 A IRF9132/3 IRFP9132/3 1RF9532/3 - - -10 A Modified MOSFET symbol . , ) ALL â  â'" 30 ns Rise Time tr ALL â'" - 15 ns Vdd=0.5BVdss, Id=-10A, Z0=4.7D, (MOSFET switching , Modified MOSFET symbol showing the integral reverse P-N junction rectifier D J EL ) S Tc=25°C, ls , Vdd=0.5BVdss.' Id=-3.5A, Zo=500, (MOSFET switching times are essentially independent of operating
-
OCR Scan
1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS IRF/IRFP9130 IRF9530

IR F740

Abstract: A V 125 1.0 40 125 1.0 40 125 1.0 32 125 1.0 32 w/°c 520 â 55 t o +150 520 -5 5 t o + 150 520 -5 5 t o + 150 520 -5 5 to + 150 mj 300 300 300 300 , Modified MOSFET symbol showing the internal device inductances. Measured from the drain lead, 6mm , . (MOSFET switching times are essentially independent of operating temperature) n 8.9 - CRSS , Source Current (Body Diode) Pulse Source Current (Body Diode) (Note 3) 's is m Modified MOSFET
-
OCR Scan
IR F740 00S40S IRF740/741/74 IRF740R/741R/742R/743R IRF740 IRF741 IRF742

IRF520 application note

Abstract: IRF52Q International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique , = 1.0 MHz See Rg. 10 Modified MOSFET symbol showing the internal inductances. 2.3 as 30 19 20 , Devices T-39-11 Max. 9.2 Units A A Test Condftiona Modified MOSFET symbol showing the integral Reverse , MOSFET Model 3 W (m), Channel Width 0.288 L (/mi), Channel Length 12 Theta (1/V), Mobility Modulation
-
OCR Scan
IRF52Q IRF520 application note Irf520 spice AN975 A44B IRFS21 IRFS23 T0-220AB C-195 C-196

DIODE 83A

Abstract: AN1001 PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify , Conditions D MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ ­­­ 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V ­­­ 110 ­­­ ns TJ = 25°C, IF = 8.3A ­­­ 520
International Rectifier
Original
DIODE RG 83A
Abstract: MOSFET â'¢ 9.2A, 100V Ordering Information â'¢ SOA is Power Dissipation Limited â'¢ Single , power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to , 8, 9) VDS > 50V, lD = 5.6A (Figure 12) VDD = 50V, lD = 9.2A, Rg = 18£î, RL = 5.5Q. MOSFET , 350 - PF - 130 - PF 25 - Modified MOSFET Symbol Showing the Internal , 37 Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode TYP A I1 s -
OCR Scan
1-800-4-H

1RF520

Abstract: IRFS20 (Hoff) Turn-Oft Delay Time ALL 50 100 ns (MOSFET switching times are essentially , screw on tab to center of die. Modified MOSFET symbol showing the internal device inductances. 0 , Source Current (Body Diode) IRF520 «RF521 - - 8.0 A Modified MOSFET symbo showing the integral
-
OCR Scan
1RF520 1rf520 transistor transistor IRF520 IRFS22 mosfet 1000 amper RF523 92CS-39529

IRF MOSFET 100A 200v

Abstract: IRF MOSFET driver Advanced Power MOSFET IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate , Copyrighted By Its Respective Manufacturer IRF W/I614 A N-CHANNEL POWER MOSFET Electrical Characteristics , in the MOSFET 'sM Pulsed-Source Current (1) - - 8.5 VsD Diode Forward Voltage (4) - - 1.5 V T , Manufacturer N-CHANNEL POWER MOSFET IRF W/I614 A Figi. Output Characteristics Fig 2. Transfer , Manufacturer IRF W/I614 A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8
-
OCR Scan
IRF MOSFET 100A 200v IRF MOSFET driver IRF 250V 100A IRf 48 MOSFET MOSFET 150 N IRF power mosfet IRF B-SD-55

IRF520

Abstract: irf520 mosfet (MOSFET switching times are essentially independent of operating temperature) t, Q q VGs = 1 0 V , - - 37 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier
-
OCR Scan
power MOSFET IRF520

SSF6N80A

Abstract: Advanced Power MOSFET SSF6N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , Junction-to-Ambient 4n ELECTRONICS 7^4142 0040220 34b SSF6N80A N-CHANNEL POWER MOSFET Electrical , 4.5 A Integral reverse pn-diode in the MOSFET ISM Pulsed-Source Current © - â'" 24 vSD Diode Forward Voltage 0 - - 1.4 V Tj=25 °C,Is='-A,Vgs=0V Reverse Recovery Time - 520 - ns Tj=25 °C,lp=* A , POWER MOSFET SSF6N80A Figi. Output Characteristics Fig 2. Transfer Characteristics ä io1 Vf
-
OCR Scan
GD4D22S
Abstract: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065â"¦ G ID = -31A S , '" 7.5 â'"â'"â'" and center of die contact  S â'"â'"â'" 1200 â'"â'"â'" VGS = 0V â'"â'"â'" 520 , '" â'"â'"â'" â'"â'"â'" â'"â'"â'" 71 170 -1.3 110 250 V ns nC Conditions D MOSFET symbol International Rectifier
Original
IRFR/U5305P
Showing first 20 results.