500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

IRF n CHANNEL MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

IRF 850 mosfet

Abstract: MOSFET IRF 635 POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 1.3 IRF 711 IRF 2 613 IRF 611 IRF 612 IRF 610 IRF 614 IRF 723 IRF 3 625 IRF 3, IRF 623 ' 4.5 5 -i" " IRF 621 IRF 620 IRF 733 IRF 5.5 IRF 6 IRF 635 IRF 843 IRF 8 523 IRF 9 521 IRF 522 IRF 520 IRF 533 IRF 631 IRF 632 IRF 630 IRF 10 IRF 12 IRF 14 Z22 IRF 16 Z20 IRF Z24 533 IRF 531 IRF 532 IRF 530 IRF 643 -IRF 18 IRF 24 Z30 IRF 27-30 Z30 IRF 35 Z40 , MOSFETs PCHANNEL TO-220 ^ \V Id ds FUNCTION GUIDE N CHANNEL D-PAK -6 0 -1 0 0 -1 5 0
-
OCR Scan

IRF 450 MOSFET

Abstract: IRF N-Channel Power MOSFETs "5097 "1, D T'3^-II . iciä »EI 000SG17 D | - - n channel IRF230/231/232/233 power mosfets 5 10- 2 , 7964 142 SAMSÃNG SE MICO N D U C J OR INC_98D 05094_D T"3Vi1 7itm42 Doosrm sf , Turn-On Delay Time td(on) ALL â'" â'" 30 ns VDD=0.5BVdss, ID=5.0A, Zo=15 0 (MOSFET switching times are , IRF232 IRF233 - - 8.0 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier , VOLTAGE (VOLTS) Typical Saturation Characteristics IRF 230,1 =BB ~ IRF 232.3 OPERATION IN THiS
-
OCR Scan
IRF230 IRF231 IRF 450 MOSFET IRF N-Channel Power MOSFETs IRF n CHANNEL MOSFET MOSFET IRF230 IRF MOSFET 100A 200v IRF230/23112321233

z44n

Abstract: mosfet z44n Output voltage for driving N channel MOSFET Ground SOT89-5L ( Top View ) VOUT 1 VCC 2 Ordering , AP436 Synchronous Rectifier MOSFET Driver Features General Descriptions - VOUT slew-rate , high-speed controller designed to drive N-channel power MOSFET used as synchronous rectifiers in high , anticipating transformer output transitions then turns the power MOSFET on or off before the transitions of , of the product. Rev.1.0 Oct 4, 2005 1/6 AP436 Synchronous Rectifier MOSFET Driver Block
Anachip
Original
z44n mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking 1N4148 marking

irf MOSFET p-CH

Abstract: marking 27A sot-23 PD-95341 IRF5851PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free N-Ch G1 , ) 0.090 0.135 Description These N and P channel MOSFETs from International Rectifier utilize advanced , = IRF5803 N = IRF 5802 Note: A line above the work week (as s hown here) indicates Lead-F ree , = WEEK PART NUMBER TOP PART NUMBER CODE REF ERENCE: A = S I3443DV B = IRF5800 C = IRF
International Rectifier
Original
IRF5851 IRF5852 irf MOSFET p-CH marking 27A sot-23 IRF P CHANNEL MOSFET marking 25b sot23 IRF5851P IRF5801 IRF5810

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF ITALICS = Future Offerings (2nd Quarter FY '97) EXAMPLE: IRFR214 - D-PAK, N Channel, 250V, 2.2A, 2.000 , 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL , CHANNEL N N N N N N N N P N N N P P N N N N P P N N P P N N CHANNEL HARRIS DISCRETE POWER PRODUCT LINE TO-251AA/252AA
Harris Semiconductor
Original
IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM RF1S60P03SM

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET RF1K49221 RF1K49223 RF1K49224 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NN N PP NP 30V , RF1K49088 RF1K49154 PACKAGE SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 CHANNEL N NP NN P PP N NN NN , Electrostatic discharge protected gates available · Avalanche energy capability available · Both N and P channel , IRFx M O SFETs N and P C h an n el Features · Size 1 through 5 die · All IRF types are avalanche , L i t t l e F E T TM SERIES S O - 8 S T A N D A R D GATE ( 1 0 V ) D E V IC E LittleFET D E V
-
OCR Scan
mosfet n channel irf IRF n 30v IRF P CHANNEL MOSFET D-PAK RF1K49157 RF1K49086 RF1K49211 RF1K49092 RF1K49090 RF1K49093

mosfet n channel irf

Abstract: 2SK2251 2SK2251-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES IFeatures â , -46 Equivalent Circuit Schematic Items Symbols Ratings Units n Drain iDl Dr iin-source voltage vâ'žs 250 v , ) channel to air 75.0 °C/W Rlh(ch-c) channel to case 6.25 °c/w A2-440 2SK2251-01 FUJI POWER MOS-FET Characteristics Id [A] l'Ili - lp=f ( V DS ) : 80pa pu I I I I I I j'ae -1 1 teat , Ti , / r 2 4 6 8 10 Vds(V) Typical Output Characteristics Rds(on) 2 -(n) 1 â'" 1 R DS 3
-
OCR Scan
2SK2251 T0-220AB SC-46 A2-442

IRF P CHANNEL MOSFET

Abstract: SD1575 Driving Power Avalanche Rated 2SK2806-01 FAP-IIIB Series N-channel MOS-FET 30V 0,02& 35A 30W , Resistance Symbol R th(ch-a) R th (ch -c) Test conditions channel to air channel to case Min. Typ , 972.233.1569 - 972.233.0481 Fax - www.collmer.com -11/98 N-channel MOS-FET 30W 30V 0,02Q I 35A > Characteristics Typical Output Characteristics 2SK2806-01 FAP-IIIB Series Drain-Source O n -S ta te R , go»- r-?-·-pep. 1 Í· .r i '2 ;j. ' ` .- ^ - Irf starting T«h (*C
-
OCR Scan
SD1575

9n90c

Abstract: 9n50c MOS-FET Process Road-map (2) 2006 2007 2008 2009 2010 N/P-Ch (60V) Trench N/P-Ch (20 , Device ( M/P, MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET S -MOSFET S MOSFET Trench MOSFET Trench MOSFET Planar MOSFET Planar MOSFET Pw < 1W Pw < 1W
KEC
Original
9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000

IRF 426

Abstract: A2426 2SK2213-01L, S N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET FAP-IIA SERIES IOutline , to n (a n td(on) "t " tr) Tu 'n-off time t0 n (torr = td(cifn "I" tf) Av ilanche capability , (c h -a ) Test Conditions channel to air channel to case Min. Typ. Max. 125 1.56 Units "C/W "C/W Rtli(C h-C) A2-425 FUJI POWER MOS-FET Characteristics 20 1 1 r i i ! BOflB pu'm tset, Tch=25*C 1 1 VS! = 1 5 V X 2( N r 5 nv 1 1 1 /U. 2S K 2213-01 L, S _ I >=f ( V DS
-
OCR Scan
IRF 426 A2426 55--I-150

IRF820

Abstract: P Channel Power MOSFET IRF MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high , OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS MAXIMUM RATINGS IRF Rating D rain-Source Voltage , pd Ade T j' Tstg X THERMAL CHARACTERISTICS Therm al Resistance J unctio n to Case Junctio n to A m bient M a xim u m Lead Tem p, fo r Soldering Purposes, 1'8" fro m Case fo r 5 Seconds °C
-
OCR Scan
IRF820 IRF821 IRF 511 MOSfet R 823 motorola IRF823

800w class d circuit diagram schematics

Abstract: schematic diagram inverter 12v to 24v 1000w applications above 500W per channel. IRS20955SPBF The IRS20955 is a high voltage, high speed MOSFET , . . . . . . . . .p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 44-45 MOSFET - DirectFET . . . . . . . . . , . .p 46-47 MOSFET - FetKY MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .p 48 MOSFET - Low Voltage MOSFETs . . . . . . . .
International Rectifier
Original
800w class d circuit diagram schematics schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram

MOSFET IRF 941

Abstract: IRF P CHANNEL MOSFET 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G Lead-Free www.irf.com S ID = 61A 1 07/20/04 IRL3102SPbF 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE
International Rectifier
Original
MOSFET IRF 941 P-channel power mosfet irf K02A diode 8024 ir 601 h HEXFET D2PAK IRL3102SP F530S EIA-418

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 , PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013 G Lead-Free www.irf.com S ID = 61A 1 07/20/04 IRL3102SPbF 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 , Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMBL E D ON WW 02, 2000 IN THE AS S E MBL Y L INE
International Rectifier
Original
mosfet p channel irf mosfet irf p-channel IRF P-Channel mosfet

MOSFET IRF 630

Abstract: MOSFET n .$$R+j$&M OUTLINE DIMENSIONS Case 1 E-pack I i 2 09 ir-f I0 3 2.3 3 7' -A,-"' - , vx-b'J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S , TOKYO, JAPAN. 16 vx-b'J=X 117~MOSFET i/x-I[ SERIES POWER MOSFET W 9+fl$-$;%H O U T L I N E D I , vx-II:?`,-X It7-MOSFET vx-1 SERIES POWER MOSFET n #jf~~;&~ OUTLINE DIMENSIONS Case 1 E-pack , SERIES POWER MOSFET n q+jfs+;&M OUTLINE DIMENSIONS Case 1 E-pack /_ 6Ov 5A ,_ 6.6 "2 5.2
Shindengen Electric
Original
MOSFET IRF 630 2SJ366

IRF P CHANNEL MOSFET

Abstract: P Channel Power MOSFET IRF 2SK1083-MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET F - I I I S E R I E S , Transconductance A p p lic a tio n s · M otor controllers · G îneral purpose power amplifier · D '-D C , capacitance Vurn-on tim e t o n (toil ^ t(i(on) " " t]-) " u rn -o ff tim e t ofr (td(orr) + 1[) Symbols V (ER)DSS V g S( i D) I d ss V gs = lo ss R p S ìo n ) g fs C i ss C oss C rss Test Conditions , Characteristics Items "'herm al Resistance Symbols R lli(ch-a) R lh(ch-c) Test Conditions channel to air
-
OCR Scan
53B8-7680

SKM692F

Abstract: SKM652 nF nF Features â'¢ N Channel, enhancement mode â'¢ Fast inverse diodes â'¢ Short internal , SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ã" S E M IK R O N Absolute Maximum , ® M Power MOSFET Modules A A Characteristics Symbol Conditions 1 1 min. typ. max , MOSFET V gs = 0 V ds = 25 V f = 1 MHz L ds Vdd = 500V Id = 6 A Vgs = 10V R gs = 3,3 ì 2 , Mi 30- I 1 nH - Thermal Characteristics per MOSFET Rthjc per module Rthoh
-
OCR Scan
SKM682F SKM692F SKM652 1000VJ T-39-15 SKM111AR SKM121 SKM651 SKM652F
Abstract: high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or , channel designed for bootstrap operation â'¢ Fully operational to +600 V â'¢ Tolerant to negative , voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output , www.irf.com Figure 6. Delay ¦ Figure 5. Shutdo n Wa e orm De initions HO 6 IRS2112(-1,-2,S , 50 Temperature(oC) #18;#18; Tur n-O n Delay Tim e ( ns) 18 . Turn On Propagation Delay Time s International Rectifier
Original
PD60251 IRS2112-2 IRS2112-1 IRS2112S IRS2112P IRS2112-1P

irf440

Abstract: 10s) Lead Temperature 11.5 (typical) Weight g N*Channel â'" Absolute Maximum Ratin gs , Reference to 25°C, Id = 1.0 mA n Reference to 25°C, Id = -1.0 mA IRF Series Devices Electrical , rectifier. ,â'" -J h n < ?D 4§ Vi ) < y IOR IRF Series Devices Source-Drain , IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Ã
-
OCR Scan
irf440 554S2 IRFAG40 IRF9130 IRF9140 IRF9230 IRF9240

IRF-520 Mosfet

Abstract: VN2224 to-220 knowing when a channel is produced, which is of little interest to MOSFET users. Comparing VGS(th) at , channel of electrons is needed between the gate and the source. This potential produces an inversion layer called the channel. The depth of this layer is the limiting factor in allowing current flow between the drain and source terminal. The greater the voltage applied, the deeper the induced channel; resulting in more current flow. The voltage needed to invert the channel region is called the threshold
Supertex
Original
IRF-520 Mosfet VN2224 to-220 definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220 TN2124K1
Showing first 20 results.