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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Copyrighted By Its Respective Manufacturer N-CHANNEL POWER MOSFET IRF W/I614 A Figi. Output , Respective Manufacturer IRF W/I614 A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig , By Its Respective Manufacturer IRF W/I614 A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv , Advanced Power MOSFET IRFW/I614A IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide , Fairchild Semiconductor Corporation This Material Copyrighted By Its Respective Manufacturer IRF W/I614 A ... | OCR Scan |
6 pages, |
soc 8a MOSFET IRF IRF 100A IRF 250V 100A MOSFET 150 N IRF IRF MOSFET 100A 200v IRF MOSFET driver IRFW/I614A IRFW/I614A abstract |
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| Abstract: Respective Manufacturer IRF W/I610 A N-CHANNEL POWER MOSFET Electrical Characteristics (Tc=25°c unless , Copyrighted By Its Respective Manufacturer N-CHANNEL POWER MOSFET IRF W/I610 A Figi. Output , Its Respective Manufacturer IRF W/I610 A N-CHANNEL POWER MOSFET Fig 9. Max. Safe Operating Area , Respective Manufacturer IRF W/I610 A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test , Advanced Power MOSFET IRFW/I610A IRFW/I610A FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide ... | OCR Scan |
6 pages, |
IRF MOSFET driver IRF MOSFET 100A 200v irf 210 mosfet IRFW/I610A IRFW/I610A abstract |
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| Abstract: 25 VDS = 200V, VGS = 0V ╡A 250 VDS = 160V, VGS = 0V, TJ = 150-'C 100 VGS = 30V nA -100 VGS = , MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25-'C, IS = 0.36A, VGS = 0V TJ = 25-'C, I F = 0.36A di/dt = 100A/╡s D S IRF5801PbF TSOP-6 Package Outline TSOP-6 , YEAR W = WEEK PART NUMBER T OP PART NUMBER CODE REFERENCE: A = SI3443DV SI3443DV B = IRF 5800 C = IRF5850 IRF5850 D = IRF5851 IRF5851 E = IRF 5852 F = IRF 5801 I = IRF5805 IRF5805 J = IRF5806 IRF5806 K = IRF 5810 L = IRF5804 IRF5804 M = ... | Original |
4 pages, |
SI3443DV IRF5802 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 MOSFET 150 N IRF IRF5851 IRF n 30v IRF MOSFET 100A 200v datasheet abstract |
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| Abstract: IR IGBT 1 MOSFET IGBT IR 2 IGBT GATE POLYSILICON , N- EPI N+ BUFFER LAYER P+ SUBSTRATE dv/dt COLLECTOR MOSFET (a) DEVICE STRUCTURE COLLECTOR C Qrr Trr G rb IGBT E EMITTER MOSFET (b) Device Symbol (c) EQUIVALENT CIRCUIT IGBT MOSFET 3 IGBT N PNP IRIGBT MOSFET MOSFET MOSFET IGBT 1 1 IGBT 2 P+ IGBT MOSFET N+ ... | Original |
12 pages, |
mosfet 10a 600v MOSFET 800V 10A igbt rectifier circuit Igbt high voltage low current igbt to247 900v IGBT application notes mosfet ir 250 n MOSFET 150 N IRF igbt 100V 5A ir 944 IRF MOSFET 10A P IRF MOSFET driver AN-983AJ AN-983AJ abstract |
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| Abstract: IRF230 IRF230 200V . 0.40 9.0A IRF231 IRF231 150V 0.40 9.0A IRF232 IRF232 200V 0.60 8.OA IRF233 IRF233 150V 0.60 . 8.0A MAXIMUM , , ID=5.0A, Zo=15 0 (MOSFET switching times are essentially independent of operating temperature.) Rise Time , IRF231 IRF231 - - 9.0 A IRF232 IRF232 IRF233 IRF233 - - 8.0 A Modified MOSFET symbol showing the integral reverse P-N , Tj=150°C, If=9.0A, dlF/dt=100A/fiS Notes: (1) Tj=25°C to 150 .(3) Repetitive rating: C (2) Pulse test , , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics IRF 230,1 =BB ~ IRF 232.3 OPERATION IN ... | OCR Scan |
5 pages, |
mosfet n channel irf IRF MOSFET 100A 200v IRF230 IRF231 IRF232 IRF233 7964142SAMSUNG MOSFET IRF230 IRF n CHANNEL MOSFET IRF N-Channel Power MOSFETs IRF 450 MOSFET IRF230/23112321233 IRF230/23112321233 abstract |
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| Abstract: temperature reliability TO-3 package (Standard) PRODUCT SUMMARY Part Number Vos Ros(on) Id IRF230 IRF230 200V . 0.40 9.0A IRF231 IRF231 150V 0.40 9.0A IRF232 IRF232 200V 0.60 8.OA IRF233 IRF233 150V 0.60 . 8.0A MAXIMUM RATINGS V , Delay Time td(on) ALL - - 30 ns VDD=0.5BVdss, ID=5.0A, Zo=15 0 (MOSFET switching times are essentially , IRF230 IRF230 IRF231 IRF231 - - 9.0 A IRF232 IRF232 IRF233 IRF233 - - 8.0 A Modified MOSFET symbol showing the integral reverse , , lF=9.0A, dlF/dt=100A/fiS Notes: (1) Tj=25°C to 150 .(3) Repetitive rating: C (2) Pulse test: Pulse ... | OCR Scan |
5 pages, |
MOSFET 150 N IRF IRF N-Channel Power MOSFETs IRF n CHANNEL MOSFET IRF230/23112321233 IRF230 IRF231 IRF230/23112321233 abstract |
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| Abstract: N-CHANNEL POWER MOSFET IRLR230 IRLR230 Figi. Output Characteristics Fig 2. Transfer Characteristics irf là V , Advanced Power MOSFET IRLR230 IRLR230 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology , Current: 10|xA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335£2 (Typ.) Absolute Maximum Ratings BVdss = 200 V , POWER MOSFET Electrical Characteristics (Tc=25°C unless otherwise specified) Symbol Characteristic Min. , , Reverse - - -100 Vgs=-20 V 'dss Drain-to-Source Leakage Current - - 10 |aA VDS=200V - - 100 VDS=160V ... | OCR Scan |
6 pages, |
IRF MOSFET 100A 200v IRF MOSFET driver IRLR230 IRLR230 abstract |
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| Abstract: MOSFET IRL620S IRL620S Figi. Output Characteristics Fig 2. Transfer Characteristics irf là V , Eteain-Sxiraa , Advanced Power MOSFET IRL620S IRL620S FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology , Lower Leakage Current: 10|xA (Max.) @ VDS = 200V Lower R, DS(ON) : 0.609Í2 (Typ.) Absolute Maximum , Rev. B This Material Copyrighted By Its Respective Manufacturer IRL620S IRL620S N-CHANNEL POWER MOSFET , Vgs=-20 V 'dss Drain-to-Source Leakage Current - - 10 |aA VDS=200V - - 100 VDS=160V,TC=125°C ^DSfon ... | OCR Scan |
6 pages, |
IRL620S IRF MOSFET 100A 200v IRF MOSFET driver IRL620S abstract |
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| Abstract: Advanced Power MOSFET IRL610S IRL610S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide , Operating Temperature ♦ Lower Leakage Current: 10|xA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185£2 (Typ. , Manufacturer IRL610S IRL610S N-CHANNEL POWER MOSFET Electrical Characteristics (Tc=25°c unless otherwise specified , |aA VDS=200V - - 100 VDS=160V,TC=125°C ^DSfon) Static Drain-Source On-State Resistance - - 1.5 n , 3.3 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source Current (1) - - 12 VsD Diode ... | OCR Scan |
6 pages, |
IRL610S IRF MOSFET 100A 200v IRL610S abstract |
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| Abstract: Its Respective Manufacturer N-CHANNEL POWER MOSFET IRLR210 IRLR210 Figi. Output Characteristics lrf irf V , Advanced Power MOSFET IRLR210 IRLR210 FEATURES ♦ Avalanche Rugged Technology ♦ ♦ ♦ ♦ ♦ ♦ Rugged Gate , Leakage Current: 10|xA (Max.) @ VDS = 200V Lower RDS(ON): 1.185Ì2 (Typ.) BVdss = 200 V ^DS(on) = 1 lD , IRLR210 IRLR210 N-CHANNEL POWER MOSFET Electrical Characteristics (Tc=25°c unless otherwise specified) Symbol , Gate-Source Leakage , Reverse - - -100 Vgs=-20 V 'dss Drain-to-Source Leakage Current - - 10 |aA VDS=200V ... | OCR Scan |
6 pages, |
IRLR210 IRLR210 abstract |
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| ST | N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET IRF640S Document /09/1999 8 Raw Text Format IRF640S N - CHANNEL 200V - 0.150 W - 18A TO-263 MESH R DS(on) I D IRF640S 200 V < 0.18 W 18 A 1 3 D 2 PAK TO-263 (suffix "T4") 1 DS Drain-source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6774.htm |
STMicroelectronics | 20/10/2000 | 9.56 Kb | HTM | 6774.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET IRF630S IRF630S N - CHANNEL 200V - 0.35 W - 9A - D 2 PAK MESH OVERLAY ] MOSFET n TYPICAL R DS DS(on) I D IRF630S 200 V < 0.40 W 9 A 1 3 D 2 PAK TO-263 (suffix "T4") 1/8 THERMAL Drain-source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6059.htm |
STMicroelectronics | 20/10/2000 | 9.71 Kb | HTM | 6059.htm |
| ST | N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET IRF640S 6774 20/09/1999 8 Raw Text Format IRF640S N - CHANNEL 200V - 0 TYPE V DSS R DS(on) I D IRF640S 200 V < 0.18 W 18 A 1 3 D 2 PAK TO-263 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS Gate-source Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6774-v1.htm |
STMicroelectronics | 25/05/2000 | 8.98 Kb | HTM | 6774-v1.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET IRF630S N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET Document Number: 6059 Date Update: 11 and Raw Text Format IRF630S N - CHANNEL 200V - 0.35 W - 9A - D 2 PAK MESH OVERLAY ] MOSFET n )DSS , Tj 3 T JMAX TYPE V DSS R DS(on) I D IRF630S 200 V < 0.40 W 9 A 1 3 D 2 PAK TO-263 (suffix "T4") 1 -source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS Gate-source Voltage + 20 V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6059-v2.htm |
STMicroelectronics | 14/06/1999 | 7.26 Kb | HTM | 6059-v2.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET IRF630S N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET Document Number: 6059 Date Update: 11 and Raw Text Format IRF630S N - CHANNEL 200V - 0.35 W - 9A - D 2 PAK MESH OVERLAY ] MOSFET n )DSS , Tj 3 T JMAX TYPE V DSS R DS(on) I D IRF630S 200 V < 0.40 W 9 A 1 3 D 2 PAK TO-263 (suffix "T4") 1 -source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS Gate-source Voltage + 20 V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6059-v1.htm |
STMicroelectronics | 02/04/1999 | 7.3 Kb | HTM | 6059-v1.htm |
| ST | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET IRF640FP IRF 3007 19/10/1999 9 Raw Text Format IRF640 IRF640FP N - CHANNEL 200V - 0 DS(on) I D IRF640 IRF640FP 200 V 200 V < 0.18 W < 0.18 W 18 A 18 A 1/9 THERMAL DATA ) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS Gate-source Voltage + 20 V I www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3007.htm |
STMicroelectronics | 20/10/2000 | 10.71 Kb | HTM | 3007.htm |
| ST | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET IRF 640 IRF640FP N - CHANNEL 200V - 0.150 W - 18A TO-220/TO-220FP MESH OVERLAY ] MOSFET by Maximum Temperature Allowed TYPE V DSS R DS(on) I D IRF640 IRF640FP 200 V 200 FP V DS Drain-source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3007-v3.htm |
STMicroelectronics | 25/05/2000 | 10.06 Kb | HTM | 3007-v3.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET IRF /9 November 2000 IRF630 IRF630FP N-CHANNEL 200V - 0.35 W - 9A TO-220/TO-220FP MESH OVERLAY] MOSFET (on) I D IRF630 200 V < 0.40 W 9 A IRF630FP 200 V < 0.40 W 9 A Symbol Parameter Value Unit IRF630 IRF630FP V DS Drain-source Voltage (V GS = 0) 200 V V DGR Drain-gate Voltage (R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3006-v3.htm |
STMicroelectronics | 14/11/2000 | 9.62 Kb | HTM | 3006-v3.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Datasheet N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Raw Text Format IRF630 IRF630FP N - CHANNEL 200V - 0.35 W - 9A - TO-220/FP DS(on) I D IRF630 IRF630FP 200 V 200 V < 0.40 W < 0.40 W 9 A 9 A 1/9 THERMAL DATA GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 k W ) 200 V V GS Gate-source Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3006.htm |
STMicroelectronics | 20/10/2000 | 10.81 Kb | HTM | 3006.htm |
| ST | N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET IRF630FP IRF630 N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET Document Number: 3006 : Portable Document Format and Raw Text Format IRF630 IRF630FP N - CHANNEL 200V - 0.35 W - 9A Symbol Parameter Value Unit IRF630 IRF630FP V DS Drain-source Voltage (V GS = 0) 200 V V DGR Drain- gate DSS R DS(on) I D IRF630 IRF630FP 200 V 200 V < 0.40 W < 0.40 W 9 A 9 A 1/9 THERMAL DATA TO-220 TO www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3006-v2.htm |
STMicroelectronics | 14/06/1999 | 8.28 Kb | HTM | 3006-v2.htm |