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70071562089 3M Interconnect INNER COLLAR M-444 visit Digikey Buy
M-444 3M Interconnect INNER COLLAR M-444 visit Digikey Buy
CLF12555T-221M-CA TDK Corporation of America FIXED IND 220UH 900MA 444 MOHM visit Digikey Buy
OED-CL-1L1 Lumex Inc Infrared LED, 5mm, 1-Element, 880nm, 2 PIN visit Digikey Buy
OP236TXV TT Electronics OPTEK Technology Infrared LED, 1-Element, 890nm, HERMETIC SEALED, TO-46, 2 PIN visit Digikey Buy
OP130W TT Electronics OPTEK Technology Infrared LED, 3.91mm, 1-Element, 935nm, ROHS COMPLIANT, HERMETIC SEALED, TO-46, 2 PIN visit Digikey Buy

IR 444 2C

Catalog Datasheet MFG & Type PDF Document Tags

Marking Code SMD

Abstract: marking code SMD zener .2A TMZJ6.2B TMZJ6.2C TMZJ6.8A TMZJ6.8B TMZJ6.8C TMZJ7.5A TMZJ7.5B TMZJ7.5C TMZJ8.2A TMZJ8.2B TMZJ8.2C TMZJ9.1A TMZJ9.1B TMZJ9.1C TMZJ10A TMZJ10B TMZJ10C TMZJ10D TMZJ11A TMZJ11B TMZJ11C , 3.74 3.89 4.04 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 , () Max. Reverse Leakage Current IR @ V R IZT(mA) ZZT @ lZT IR(A) VR(V) 5 100 1000 , Leakage Current IR @ V R IR(A) VR(V) 0.2 0.2 12 150 0.5 0.2 13 55 200 0.5
Taitron Components
Original
Marking Code SMD marking code SMD zener smd code marking 5b TMZ5231B TMZ5229B zener SMD MARKING CODE 6c TMZJ12A TMZJ12B TMZJ12C TMZJ13A TMZJ13B TMZJ13C

Marking Code SMD

Abstract: smd code marking 4A .2A TMZJ6.2B TMZJ6.2C TMZJ6.8A TMZJ6.8B TMZJ6.8C TMZJ7.5A TMZJ7.5B TMZJ7.5C TMZJ8.2A TMZJ8.2B TMZJ8.2C TMZJ9.1A TMZJ9.1B TMZJ9.1C TMZJ10A TMZJ10B TMZJ10C TMZJ10D TMZJ11A TMZJ11B TMZJ11C , 3.74 3.89 4.04 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 , () Max. Reverse Leakage Current IR @ V R IZT(mA) ZZT @ lZT IR(µA) VR(V) 5 100 , Leakage Current IR @ V R IR(µA) VR(V) 0.2 0.2 12 150 0.5 0.2 13 55 200
Taitron Components
Original
smd code marking 4A TMZ5235B TMZ5232B SMD MARKING CODE 901 TMZ5226B TMZJ15A TMZJ15B

a4504

Abstract: IC a4504 ir 1G B A 2G 2C TC 1G B A 2G 2C 1C 1G B A 2G 2C UT 1G B A 2G 2C TTO 1Y1 Test , 0.4 y 0.4 y 0.4 y -ir 1G B A 2G 2C 7TTT TT BW "ÏT 36 37 38 39 40 2.7 y 2.7 y 2.7 y 2.7 V 2.7 V ir IG B A 2G 2C T7TT "ST IH2 5.5 y 5.5 V 5.5 V ~Tccâ'"Iâ'"â'"n-i 4.5 v Same , 50 1 1 1 Propagation delay time, 1 low-to-h1gh level I 2C > 2Y0 I jtpLH5 1 1 1 ol 1 2 26 ns 1 1 1 , , high-to-low level 2G > 2Y0 Propagation delay time, high-to-low level 2C > 2Y0 Propagation delay time
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a4504 IC a4504 MIL-M-38510/326B MIL-M-38510/326A MIL-M-38510 385TT IL-M-38510 M1L-M-38510

ET 3005

Abstract: ha 13441 method 5005 of MIL-STD-883 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). , , C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall , , except as permitted by appendix B of MIL-M-38510. 4.4.4 Group D inspection. Group D inspection shall be , 2B 2Y OND Device type 02 Cases A, B, C, and D 1A IB 2A 2B 2C 2Y ONO FIGURE 1. Terminal connections , 2B 2C R3 CP OVWr _ R3 CP O-WV- 1 notes: _ 1. CP or CP = 100 kHz ±50?; square wave; duty cycle
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ET 3005 ha 13441 MIL-M-38510/374 54ALS08 54ALS11 5962-F600-2

RG2ET-12V

Abstract: RG2E-5V RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS R G - R E U V Y S · , operation, transport and storage m entioned in A M B IE N T E N V IR O N M E N T (P ag e 45) TYPICAL , current, mA 133 80 66.7 44.4 33.3 16.7 8.3 Nominal operating power, mW 400 400 400 400 400 400 400 Maximum , 80 66.7 44.4 33.3 16.7 8.3 Nominal operating power, mW 400 400 400 400 400 400 400 Maximum allowable , (2C) R G 2 E -1 2 V 6 pcs. Coil voltage, % V 4-(4). Set and reset time (2C) R G 2 E -L 2 -1 2
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RG2ET-12V RG2E-5V RG1ET RG2ET-L2-12V rg2et RG2ET-L2

marking 6a2 smd

Abstract: zener Z11B 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 2.10 2.20 2.30 2.41 2.52 2.63 , Zener Test Current Max. Zener Impedance (Ω) Max. Reverse Leakage Current IR @ V R IZT(mA) ZZT @ lZT IR(µA) VR(V) 5 100 1000 0.5 120 0.5 5 100 1000 , Z30C Z30D Nom. Min. Max. VZ(V) Part No. TLZJ6.2A TLZJ6.2B TLZJ6.2C TLZJ6.8A TLZJ6.8B TLZJ6.8C TLZJ7.5A TLZJ7.5B TLZJ7.5C TLZJ8.2A TLZJ8.2B TLZJ8.2C TLZJ9.1A TLZJ9.1B TLZJ9
Taitron Components
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marking 6a2 smd zener Z11B

1N3064

Abstract: MIL-M-3B510 i-r lUnit 1 ISTD-883 ¡method 1 1 ITest no. 1 1 1C 1 1A 1 1 1 1 1Y 1 2C 1 I 1 1 1 2A 1 1 1 1 ?Y 1 1 , i n met od 5005 of MI L-STD-883 and herein for groups A, B, C, and D inspections isee through 4.4.4 , groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A , 3Y rÅ' 12 III Ã.OU9 .TL VTO '"Il 2"3"4"6"6 IC IA IY 2C 2 A 2Y ONO Positive logic: Y = A , 11 U 10 II 9 L| 8 L ^ [5 I r E 3 â  4 â  5 â  Â« 1 7 h1 IC IA IY 2C 2 A 2Y ONO Positive logic
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1N3064 MIL-M-3B510 13005 2 13005 equivalent internal SEC 13005 MIL-M-38510/153A MIL-M-38510/153 MIL-M-39
Abstract: ) .175 (4.44) -C â'" .150 "(3.81) 1 .290 f - (7-37) MAX. .060 (1.52) .050 (1.27 , ) TYP- .175 (4.44) .150 (3.81) m EXTENDED TOP ACTUATOR .290 (7.37)_ â'¢ MAX. .075 , lot I L.200 J .020 0.51) TYP. II .020 -*ir(o.5D J I 1 1 tâ'" â'" - 1â'" 1 ' , ~T .010 (0 .2 5 )TYP. r .290 - { 7 .3 7 )MAX. .175 (4.44). Jun. - .050 -(1 .2 , Ol L-2C -I 0I â' ( 5 .0 8 p .160 (4.06) .320 " ( 8 .1 3 ) ' * SP/DPDT SIDE ACTUATOR -
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115VAC 28VDC 500VDC

IR LFN

Abstract: ET 3005 herein for groups A, B, C, and D Inspections (see 4.4.1 through 4.4.4). 4.4 Qua!ity conformance Inspection. accordance with MIL-M-38510.â'"inspections method 5005 of MIL-STD-883 4.4.1 through 4.4.4). , hours, except as permitted by appendix B of MIL-M-38510. 4.4.4 0 _1 "^P6^!0";. Group 0 inspection shall , IB 2A 2B 2C 2Y QND DEVICE TYPE 01 CASE X, Y 28 N/C 2A MA: I Y 000 00 0 0 0 0 0 3B HA: 4Y N/C 4 A (TOP VIEW) DEVICE TYPE 02 CASES X,Y 2C N/C 20 N/C 2 A 0 0 0 HI 0 0 0 0 0 0 3B N/C 3C N/C IY iTOf
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54ALS04 IR LFN MIL-M-38510/370 54ALS10 54ALS20 54ALS30 54ALS133

diode ZENER A26

Abstract: ZENER A16 25 25 25 25 25 5 5 5 5 5 5 5 5 1/6 IR @VR 0.2 0.2 0.2 0.2 , .1C LMTZJ9.1B LMTZJ9.1A LMTZJ8.2C LMTZJ8.2B LMTZJ8.2A LMTZJ7.5C LMTZJ7.5B LMTZJ7.5A LMTZJ6.8C LMTZJ6.8B LMTZJ6.8A LMTZJ6.2C LMTZJ6.2B LMTZJ6.2A LMTZJ5.6C LMTZJ5.6B LMTZJ5.6A LMTZJ5.1C LMTZJ5.1B LMTZJ5 , 4.81 4.68 4.55 4.44 4.3 4.17 4.04 3.89 3.74 3.6 3.455 13.66 13.21 12.75 12.35 12.03
Leshan Radio Company
Original
LMTZJ18C diode ZENER A26 ZENER A16 ZENER A26 diode zener c23 A10 ZENER DIODE diode zener c25 DO-35 DO-34 LMTZJ30D LMTZJ30C LMTZJ30B LMTZJ30A

1N4568AUR-1

Abstract: 1n4573 die ) 4022 IZ = Column 4 of 1.4. TA = +25C 2C IR 2.0 A 2.0 VZ mV 1N4565 1N4566 , +25C. Column 1 Column 2 Column 3 Column 4 Column 5 ZZ IR VZ VZ VR = 3.0 V IZ = 0.5 mA dc , , 1N4569AUR-1 0.005 200 6.08 6.72 2.0 VZ ZZ IR VZ IZ = 1.0 mA dc VR = 3.0 V (voltageType (1) IZ = , 0.005 100 6.08 6.72 2.0 ZZ IR VZ VZ VR = 3.0 V IZ = 2.0 mA dc (voltageType (1) IZ = 2.0 mA , 0.005 50 6.08 6.72 2.0 IR ZZ VZ VZ VR = 3.0 V IZ = 4.0 mA dc (voltageType (1) IZ = 4.0 mA dc
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1N4565A-1 1N4584A-1 1N4565AUR-1 1N4584AUR-1 1N4568AUR-1 1n4573 die 1N4569AUR1 JANTX 1N4570A JANTX zener 5.1 B2 MIL-PRF-19500/452J MIL-PRF-19500/452H

1n3155 substitution

Abstract: B11022 Type 130.0 65.0 26.0 13.0 VZ (1) IR Min Max ohms volts volts VR = 5.5 V , Radiation hardened devices. See MIL-PRF-19500 and 4.4.4 herein. 5 MIL-PRF-19500/158T * 4.3 , percent of initial reading. TA = +25C ±2C, VZ ±0.004 V dc from initial value for 1N3154-1, 1N3154UR-1 , table I herein; ZZ ±15 percent of initial reading. TA = +25C ±2C, VZ ±0.004 V dc from initial value , mA dc, TA = +100C (see 4.5.2). Not applicable. 4.4.4 Group D inspection. Group D inspection shall
DEPARTMENT OF DEFENSE
Original
1N3157-1 1N3157UR-1 DO-213AA 1N3155-1 1n3155 substitution B11022 1N3155UR-1 MIL-PRF-19500/158R 1N3154 1N3155

1N939B-1

Abstract: 1N935B-1 electrical characteristics at TA = +25°C. VZ IR VZ ZZ IZ = 7.5 mA dc VR = 6.0 V (voltage - temperature , -19500 and 4.4.4 herein. 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in , +25°C ±2°C, VZ ±0.004 V dc from initial value for 1N935B-1, 1N935BUR-1, 1N937B-1, and 1N937BUR-1; VZ , reading. TA = +25°C ±2°C, VZ ±0.004 V dc from initial value for 1N935B-1, 1N935BUR-1, 1N937B-1, and , +100°C. (see 4.5.2). Not applicable. 4.4.4 Group D inspection. Group D inspection shall be conducted
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1N938B-1 1N939B-1 1N940B-1 1N938BUR-1 1N939BUR-1 156n diode MIL-PRF-19500/156N MIL-PRF-19500/156M
Abstract: Operating Junction Temperature Range ti;.- } > ;^ ^ ii f i'.r r c = i2 9 C â'˜) Full Sine W ave. Resistive Load ( ^ n if ^ T * . 4.44 (5H j> }!ltlT 0 z ;^ J ii:' 0 -40â'"hl50 -40â'"1 5 -1 0 , ) ~ 44 0 :]iâ'˜ 5 OS TDK ;t I 2 5 O 2C PE'FUSS V iTA i IV) O G ife IB c a -
OCR Scan
EA40QC10 EA40QC10-F 20X20
Abstract: CHARACTERISTICS Characteristic 1 .Base 2.C ollecto r 3 .Em itter (T c=25°C) Sym bol Test C ondition , C IR C U IT -SWITCHING TIME TEST CIRCUIT -Duty Cycle 1% C T.U.T Rev. B FAIRCHILD S , '"5lg 2 444 0 2 â'" L= 500(jH SING LE PULSE 10 V q e (V) , C O LL E C T O R -E M IT T E R V O -
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KSD5702 KSD5072

54als02

Abstract: , C, and D inspections (see 4.4.1 through 4.4.4). 4.4 Quality conformance inspection. Quality , 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordance with table I of method 5005 , hours, except as permitted by appendix B of MIL-M-38510. 4.4.4 Group D inspection. Group D inspection , IC IY 3C 3B 3A 3Y 14 . 13 . 12 . II . 10 . 9 . 8 1 "2'3'4'5'6"7 A IB 2A 2B 2C 2Y GND FIGURE , N/C 2 Y N/C IB 000S0 14 15 16 17 18 3 Y N/C 4 A N/C 4B Device type 02 Cases X,Y 2C N/C 2B N
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54als02 L-M-38510/373 54ALS02 54ALS27 MIL-M-38510/373 5962-F600-1

MT1388

Abstract: CHN 838 bsolute M axim um Ratings* Parameter i s o 2c m o s 3SE D tiEMRBTQ O O Q S R S b f c > HITC , design aid only: not guaranteed and not subject to production testing. 3-66 i s o 2-c m o s , -1 /MT8880-2 MITEL S E M I C O N D U C T O R Vss= 0 V, , ns ns 5 5 PF pF * 200 pF load 23 24 25 26 27 28 29 30 45 10 3-68 i s o 2-c m o s , -2 MITEL S E M I C O N D U C T O R i s o 2-c m o s 3SE D b24T370 QDDSTSD f l iniTC Pin
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MT8880 MT1388 CHN 838 MT8880-1AC chn 839 3d13 2MT37G MT8880/MT8880-1 IS02CMOS T8870

zener 2B3

Abstract: 4C3 zener @Iz IZ(mA) IR @ VR 0.5 0.5 250 0.5 0.5 5 0.5 200 0.5 0.5 150 0.5 VR , LMTZJ10C LMTZJ10B LMTZJ10A LMTZJ9.1C LMTZJ9.1B LMTZJ9.1A LMTZJ8.2C LMTZJ8.2B LMTZJ8.2A LMTZJ7.5C LMTZJ7.5B LMTZJ7.5A LMTZJ6.8C LMTZJ6.8B LMTZJ6.8A LMTZJ6.2C LMTZJ6.2B LMTZJ6.2A LMTZJ5.6C LMTZJ5 , 40 70 70 70 80 80 2/6 IZ ZZk @Iz IZ(mA) IR @ VR 150 110 5 120 150 500 , VZ @ Min 4.44 4.3 4.17 4.04 3.89 3.74 3.6 3.455 3.32 3.16 3.01 2.85 2.69 2.54 2.43
Leshan Radio Company
Original
zener 2B3 4C3 zener zener 9A2 9b1 zener zener 2B1 7a1 zener LMTZJ56 LMTZJ51 LMTZJ47 LMTZJ43 LMTZJ39G LMTZJ39F

2N174A

Abstract: 2n174 , ir, tables 1, 11, (.lti ban -d .C-3r .ltimllt tu@ Tr~sisto, shall , of the bady of !UL-.9-195W, .2c.ti.m-mnnce ins+wt ion GrouP A ln,poctim shall , ; Ic . -5 Ad. trandor 3076 VCE = -2 V&; XC = -1.2 pulsed (me 4.4.4) L-C., 3G76 v ~L , - -Lo -2 Vdo; lC = -5 Ad,; ad (s. 4.4.4) 80 25 A&; - m I 10 , - - P~=mu unit Im 30 WE 4.4.4) A.1O M24 Max Ml. (CO"t
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2N174A 2n174 AK5151WR 5-195O3 EIL4-19X0 S-195 KIL-5-19

T-13007

Abstract: in 3003 TRANSISTOR 4.4.1 through 4.4.4). Generic test data (see 6.6) may be used to satisfy the requirements for groups C , GND GND GND GND 4.0 V GND GND 4.0 V 1A IB 1C ID 2A 2B 2C 2D 2.0 IlL 300 9 23 24 25 26 27 , 4.0 V 0.4 V 4.0 V 4.0 V 4.0 V 4.0 V 0.4 V 4.0 V 4.0 V II 0.4 V 1A IB 1C 10 2A 26 2C 2D -0.6 , 02 - Continued 1/. "TT T T" ~TT "rr ~7F~ ir "ST TT "Tir -Tr Subgroup Symbol "tt üHD , 2c gnd 1 4.0 v 1 " 2d 0.4 V 4.0 V 4.0 V 0.4 V 4.0 V 4.0 V 4.0 V 4.0 V 0.4 V 4.0 V 4.0 V 0.4 V
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T-13007 in 3003 TRANSISTOR SE 13007 transistor E 13009 13009 TRANSISTOR equivalent E 13007 MIL-M-38510/31A MIL-M-38510/31 L-M-38510/31A
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