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TLH-5934/P Tadiran Batteries Primary Battery, Lithium, 1/10D, 3.6V, 0.9Ah, visit Digikey Buy
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IR 10D 7

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Supply for Xilinx Artix-7/Kintex-7 ADP5050 INPUT SUPPLY 4.5V TO 15V BST1 PVIN1B C1 10ð , EN2 C11 R11 XILINX VIRTEX-7 G2 Q2 PVIN2B C7 R7 S2 DL2 PVIN2A C5 10ð , Spartan-6 ADP5050 PVIN1A INPUT SUPPLY 4.5V TO 15V BST1 PVIN1B C1 10ð›F COMP1 C3 R3 , VREG VIO L2 = 2.2ð›H R5 C6 BST2 PVIN3 R11 D2 SW2B C9 10ð›F C11 G2 Q2 PVIN2B C5 10ð›F C4 47ð›F S1 R4 SS12 ON 0.8V TO 1.2V D1 VREG Analog Devices
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ADP505 BR10508-5-9/13

notebook display tft pinout

Abstract: SN 102 lcd 3000 Reel Diameter 7 in. (177.8mm) Note: Available in Tape & Reel Append the letters "TR" to the part number (i.e. LX7207ISPTR) Copyright © 2003 Rev 1.0d, 6/16/2004 Microsemi 11861 , , B1, C1, D1, E1 Filter Inputs 1, 3, 5, 7, 9 A2, B2, C2, D2, E2 Filter Inputs 2, 4, 6, 8, 10 , , E5 Filter Outputs 1, 3, 5, 7, 9 ELECTRICAL CHARACTERISTICS Unless otherwise specified, the , IR RS Temperature Co-Efficient of RS Total Capacitance Attenuation in the Pass Band Cut-off
Microsemi
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LX7207 notebook display tft pinout SN 102 lcd 11KV 15KV LX7207ISP IEC61000-4-2

1N5054

Abstract: 1n4816 Characteristics 10D lF(AV ) @ Max. 'FSM @50 Hz @ 60 Hz \2y/T Tj V r r m Range 48 50 48 50 48 50* 161.4 48 A 50 , 0D04107 0 48 55452 INTERNATIONAL R EC TIFIER 1N4816,1N5052,10D, 20D Series V O L T A G E R A T IN G S VRRM " MaxRepetitive Peak Reverse Voltage (V) 55C 04907 INTERNATIONAL RECTIFIER 0 I«R , 17 5 °C © T = -65 to 1 7 5°C © T = -65 to 1 6 5°C © Min. Part Numbers 7.5 50* 4.7 10D05, 20D05 , SPECIFICATIONS 10D I f (AV) Max. average forward current @ Max. T © *FSM Max. peak one cycle, nonrepetitive
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1N5054 PD2004C 10D10 1n5053 D0-204AL DO-41 1N4822 1N4816-22 1N5052-54

LIMING relay

Abstract: 24VOO and mounting features. Calata^ Number Tims Range (in seconos) Input Volt f W ir in g D ia g r a m s D im e n s io n D ra w in g s P LU G -IN (S O LD E R ) T E R M IN A L S 7 7 O -T · II O , i i ìcv.y/ « , -2C-115A\' B TD1Q NA-2C-120N D T010W A-2C -240N D T010N A -2C-115AN D 0.1 1C I0 0.1 ic 10 0.1 lo 10 1 to 10D 1 to 10D 1 to 100 12VDC 24VOC 115VAC 50/60 Hz Ï2 V 0 C 24VOO 115VAC 50/60 Hz ta>« Af.r '0 CVKUtl
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LIMING relay IR 10D 7 T154 relay 24V d LIMING VOLTAGE RELAY t amp 50/60H 29VDC TD10DA-2C-120W 10DA-2C-115AN 10DA-2C-24
Abstract: | 7 ADP5054 Supply for Xilinx Artix-7/Kintex-7 ADP5054 INPUT SAMPLE: 4.5V TO 15.5V C1 10ð , PVIN1A C1 10ð›F PVIN1B BST1 PVIN1C VREG EN1 C2 VREG PVIN2A PVIN2B R8 DL2 , ›H BST3 C11 R11 C6 100ð›F S2 D2 BST2 C9 10ð›F C5 100ð›F Q2 SW2C PVIN3 , ›H SW1B VREG C7 10ð›F R2 SW1A BUCK 1 6A COMP1 C3 R3 R1 FB1 R10 VCCAUX C12 47ð›F VCCAUX_IO VCCO_1V8 CFG34 BST4 PVIN4 C14 SW4 C13 10ð›F BUCK 4 2.5A Analog Devices
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BR10508-0-2/15

1N4822

Abstract: 1N4820 S.OAmp Molded Silicon Rectifier Diodes Major Ratings and Characteristics 10D 20D 1N4816 1N5052 Units , RECTIFIER SS~»F| 4S554S2 0004^7 48 55452 îNTERNATiONAL RECT IFIER 55C 04907 I«R 1N4816,1N5052,10D, 20D , 10D1, 20D1, 1N4817 100* 200* 70 100* 4.7 7.5 10D2, 20D2, 1N4818 200* 300* 140 200* 4,7 7.5 - 1N4819 , 10D 20D 1N4816 1N5052 Units Conditions 'F(AV) Max. average forward current 1.5 2.0 1.5* 1.5* A 180 , Approximate weight 0.33 (0.012) - g (oz) Case Style DO-2Q4AL (DO-41) JEDEC ©T = TAfor 10D series, 1N4816
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OCR Scan
1N4820 IR 20D2 7510D1 IR 10D4 20D10 rectifier 10d 1IM4816

GRM033R60J104

Abstract: C02E10 dimension No defects or abnormalities 5 6 7 Insulation Resistance Capacitance 50 · F min. Within , % R6 / R7 / C8 : 0.1 max. F5 : 0.2 max. 50 · F min. Resistance to D.F. 14 Soldering Heat I.R. Dielectric Strength Appearance Capacitance Change D.F. Temperature Sudden Change I.R. 15 Dielectric , seconds. Let sit at room temperature for 48T4 hours, then measure. #Initial measurement W 0 10D for one , #Initial measurement W 0 Perform a heat treatment at 150Y 10D for one hour and then let sit for 48T4 hours
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C02E10 GRM033R60J104 GRM033R60J104KE19 GRM033 GRM155 GRM185 GRM188 GRM216

GRM21BR60J106KE01

Abstract: 4 5 6 7 Insulation Resistance Capacitance Dissipation Factor (D.F.) 50 · F min Within the , treatment at 150 Y 10D for one hour and then let sit for 48T4 hours at room temperature. Perform the initial , #Initial measurement W 0 Perform a heat treatment at 150 Y 10D for one hour and then let sit for 48T4 hours , . #Measurement after test W 0 10D for one hour and then Perform a heat treatment at 150 Y let sit for 48T4 hours , Resistance Change to D.F. 14 Soldering I.R. Heat Dielectric Strength Appearance Capacitance Change D.F. I.R
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GRM21BR60J106KE01 C02E9 GRM21B GRM32D GRM32DR60J226KA01 1000T12

STF202

Abstract: diode marking 714 Resistance Capacitor VRWM VBR IR RS RS TCOEFF RPU C Total Capacitance Copyright © 2002 Rev. 1.0d, 2007-04-11 CTOT Test Conditions IR = 1mA VRWM = 5.25V, T = 25°C Each Line Each Line , Copyright © 2002 Rev. 1.0d, 2007-04-11 DIN from connector 1 2 6 GND 5 DOUT 4 , © 2002 Rev. 1.0d, 2007-04-11 Microsemi Analgo Mixed Signal Group 11861 Western Avenue, Garden Grove , SUSCEPTABILITY Copyright © 2002 Rev. 1.0d, 2007-04-11 control cards, interface boards, external memory
Microsemi
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STF202 LX7202 LX7202-15ISF LX7202-22ISF diode marking 714 LX7202-
Abstract: â'¢ Estimated BOM: $4.95 (1 kpcs) ADP5050 BST1 PVIN1B C1 10ð›F SW1A BUCK 1 4A , C4 47ð›F R4 PVIN2A C7 R7 1.1V PGND SS12 C5 10ð›F ALTERA CYCLONE V R2 , VTT C8 47ð›F VCCIO_2P5 BST3 PVIN3 C9 10ð›F BUCK 3 1.2A COMP3 C11 R11 ON C10 , ›F VCCPGM VCCH_GXBL VCCA_FPLL VCCBAT SS34 BST4 PVIN4 C13 10ð›F BUCK 4 1.2A COMP4 EN4 , 3.3 × 3.3 × 1.0 QFN IRFHM8364 IR 3.3 × 3.3 × 0.9 QFN XAL6030-222ME NRS6045 Analog Devices
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BR10509-0-11/13

22V10D

Abstract: J64 K73 L54 P13 Operating Range C om m ercial 120 10 5 7 PA LC22V 10D -12D M B PA , outputs Dll' LCC, and PLCC available -10 ns commercial 7 ns tco 5 ns t$ 10 ns tpo 100-MHz state machine , D -O R ) logic structure and a new concept, the "Program m able M acro cell." T he PAL. C 22V 10D is , . - 6 5 °C to + 150°C - 5 5 °C to + 125°C - 0.5V to + 7 .0 V - 0.5V to + 7.0V - 3.0V to +7.0V 16mA , . Ambient Temperature 0 ° C to + 7 5 °C - 5 5 °C to + 125°C - 4 0 e C to + 8 5 ° C vcc 5V ±
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22V10D PALC22V10D 100-MH 83-MH PALC22V10B-- PALC22V10-25
Abstract: general application circuits, and RA(RSA) Type (mold color : gray) for H IR O S E 's original circuits. 5 , # 28 Flat Cable (7/0.127mm) is ap plicable. Applications Computers, terminal equipment, PPC, a , Part No. HI F2E -10D -2.54R B H IF2E -14D -2.54R B H IF2E -16D -2.54R B H IF2E -20D -2.54R B H IF 2E , 561-0660-0 Part No. H IF 2E -10D -2.54R S B H IF 2E -14D -2.54R S B H IF 2E -16D -2.54R S B H IF 2E -20D , F2E-KD - - t - r 1 - 1.27 lìiìiri 2.54 ZfltïMfl ir -
OCR Scan
UL2651 UL94V-Q HIF2E-10D-2 54RSA HIF2E-16D-2 HIF2E-20D-2

LAMP DIGITAL DIMMER

Abstract: Delay linear sweep generator using IC 555 LX1689CPW 1 Transformer 1 Dual FET 2 Connectors 7 Resistors 9 Capacitors 21 Total Count .397 , ) Copyright © 2000 Rev. 1.0d, 2004-07-12 Microsemi Integrated Products 11861 Western Avenue, Garden , BRITE_C 7 14 BRITE_OUT BRITE_R 8 13 EA_OUT BRITE_IN 9 12 EA_IN 10 11 I_R ENABLE Exceeding these ratings could cause damage to the device. All voltages are , ) .-0.3V to VDD_P +0.5V Analog Outputs (BRITE_C, I_R, BRITE_OUT, BRITE_R, EA_OUT) .-0.3V to VDD_A_ +0.5V
Microsemi
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LX1689 LAMP DIGITAL DIMMER Delay linear sweep generator using IC 555 SI9945 20-PIN 400HZ LX1686
Abstract: LEVEL 7 T-74-09-01 LMX-113 (+ 7 dB m LO, up to +1dBm RF) SC IE N TIFIC / M IN I-C IR C U , 50.000 freq. LO LO LO (MHz) +4 d B m +7dBm +10d B m +4dBm +7d B m + 10d , 23.24 +4dBm + 7dBm +10d B m 35.000 40.000 50.000 65.151 80.000 5.75 5.86 5.90 5.86 , VSWR, RF port LO LO freq. LO MHz +4 d 6 m +7 d B m Isolation L-l (dB) LO LO Isolation L-R (dB) LO Conversion Loss (dB) LO LO LO +10d B m LO VSWR, LO port LO LO + -
OCR Scan
000122S

IR 10D 7

Abstract: LT9310E L E D -Panel D isp lays LT 93 10D Series LT9310D Series LT9310D Red LT9310H Yellow , device specification sheets before using any S H A R P 'S device." LE D Panel D isplays LT 93 10D , 50 0.36 0.91 5 - 2 0 to + 7 0 " 30 to + 8 0 260 (within 5 seconds) mW mA mA mA/°C mA/°C V DC , SH A RP 361 LE D Panel D isplays LT 93 10D Series LT9310D (Red) Electro-optical , n g t h Inni) 362 SHARP- L E D Panel D isplays LT 93 10D Series LT9310H
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OCR Scan
LT9310E

D2627

Abstract: SN75584 ) (7). (1) 10D 10D 10D [a -g l0 ADJUST] (16) (15) (17) DPI v w -o (4) R dpV / (See , SN75584A HIGH-VOLTAGE 7 -SE G M E N T LATCH/DECODER/CATHODE D R IV E R D2627, M AY 1981 D U A L -IN L IN E P A C K A G E (TO P V IE W ) DPI Q ] B jT C []T CPi I j T bT u TfTj V c c 7 7 ] DPo , D EE A [T GND [ T logic sym bol t IN IS s 200 V de must B C D /7 -S E G (1 3 ) (1 2 ) (1 1 ) (10) (1 6 ) (1 5 ) (1 7 ) S i IS) B1 LE A EN 16) (8) (3 ) (7) (1 ) i.6 mA. ¿an
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OCR Scan
SN75584 decoder BCD-7 segments 7 segment display R 056 cc SN7558 BCD 7 seg SN75580
Abstract: 20 3 4Q 1 3 6Q 9 5DO 6DC? 18 3 6Q 7DC8 1 3 7Q 7 8D [ > 1 D 8Q 6 9D C u 153 9Q 10D £ 11 , 5DC 6 1 3 5Q 9 6EC; 1 3 60 8 ?£E B 1 3 7Q 7 8DQ 9 1 3 80 6 9D[3 1 0 1 3 8° 5 10D[j i , m r - EN (13) >C1 (2) (3) (4) (5) (6) (7) 7D (8) 8D (9) (10) 9D 10D (11 , operation over the full m ilitary tem perature range o f - 5 5 ° C to 1 2 5 ° C . The S N 7 4 A S â'™ fa m ily is characterized fo r operation fro m 0 ° C to 7 0 °C. NC â'"No in te rn a l c o n n e c -
OCR Scan
SN54AS821 SN54AS822 SN74AS821 SN74AS822 10-BIT 54AS821

HER307g

Abstract: EGP10A -10K Typical Junction Capacitance EGP10A-10D EGP10F-10K Revision: 7 IF(AV) 1.0 A IFSM 30A 8.3ms, half sine VF 1.00V 1.25V 1.70V D TA = 55OC IR 5.0uA 100uA trr 50nS 75nS CJ 22pF 15pF C IF=1.0A TA=25OC DIMENSIONS TA = 25OC TA = 125OC IF=0.5A, IR , Surge Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC , Reverse Voltage - Volts Revision: 7 www.mccsemi.com 2 of 4 2008/01/30 MCC EGP10A thru
Micro Commercial Components
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EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K HER307g HER101G HER102G HER103G
Abstract: Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F , INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 IR trr 50nS 75nS TA = 25 C TA = 125OC IF=0.5A, IR=1.0A, IRR=0.25A TJ=25OC Measured at 1.0MHz, VR=4.0V O DIM A B C D MAX .205 .107 .034 - MAX 5.20 2.70 .90 - NOTE CJ 22pF 15pF Revision: 7 www.mccsemi.com 1 Micro Commercial Components
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50OC/W EGP10A-10D
Abstract: Junction Capacitance EGP10A-10D EGP10F-10K Revision: 7 D IF(AV) 1.0 A TA = 55OC IFSM 30A 8.3ms, half sine VF 1.00V 1.25V 1.70V IR 5.0uA 100uA trr 50nS 75nS CJ 22pF 15pF C IF=1.0A TA=25OC DIMENSIONS TA = 25OC TA = 125OC IF=0.5A, IR=1.0A, IRR , Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse , Voltage - Volts Revision: 7 www.mccsemi.com 2 of 4 2008/01/30 MCC EGP10A thru EGP10K TM Micro Commercial Components
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