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    IPI110N20N3+G Search Results

    IPI110N20N3+G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPI110N20N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 200.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 88.0 A; Original PDF
    IPI110N20N3GAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 88A TO262-3 Original PDF
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    IPI110N20N3+G Price and Stock

    Infineon Technologies AG IPI110N20N3GAKSA1

    MOSFET N-CH 200V 88A TO262-3
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    DigiKey IPI110N20N3GAKSA1 Tube
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    Quest Components IPI110N20N3GAKSA1 552
    • 1 $12
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    Infineon Technologies AG IPI110N20N3G

    POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA
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    Quest Components IPI110N20N3G 13
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