IPD14N06S2-80 Search Results
IPD14N06S2-80 Price and Stock
Infineon Technologies AG IPD14N06S280ATMA2Trans MOSFET N-CH 55V 17A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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IPD14N06S280ATMA2 | Cut Strips | 983 | 12 Weeks | 1 |
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IPD14N06S280ATMA2 | Reel | 2,500 | 2,500 |
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IPD14N06S280ATMA2 | Reel | 12 Weeks | 2,500 |
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IPD14N06S280ATMA2 | 533 |
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IPD14N06S280ATMA2 | 1,724 |
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IPD14N06S280ATMA2 | 1,379 |
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IPD14N06S280ATMA2 | 95,890 | 1 |
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IPD14N06S280ATMA2 | Reel | 2,315 | 100 |
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IPD14N06S280ATMA2 | 5,000 | 1 |
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Infineon Technologies AG IPD14N06S280ATMA1MOSFET N-CH 55V 17A TO252-3 |
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IPD14N06S280ATMA1 | Reel |
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Infineon Technologies AG IPD14N06S2-80 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD14N06S2-80 | 5 |
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IPD14N06S2-80 | 1,968 |
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Infineon Technologies AG IPD14N06S280OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD14N06S280 | 9,335 |
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IPD14N06S2-80 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPD14N06S2-80 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 80.0 mOhm; ID (max): 17.0 A; RthJC (max): 3.2 K/W; | Original | |||
IPD14N06S280ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 17A TO252-3 | Original | |||
IPD14N06S280ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 17A TO252-3 | Original |