IPB50CN10NG |
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 20A TO263-3 |
|
Original |
PDF
|
IPB50CN10NG |
|
Infineon Technologies
|
OptiMOS 2 Power-Transistor |
|
Original |
PDF
|
IPB50CN10NGATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 20A TO263-3 |
|
Original |
PDF
|
IPB50N10S3L-16 |
|
Infineon Technologies
|
Single: N-Channel 100V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.4 mOhm; ID (max): 70.0 A; RthJC (max): 1.5 K/W; |
|
Original |
PDF
|
IPB50N10S3L16ATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 50A TO263-3 |
|
Original |
PDF
|
IPB50N10S3L16ATMA2 |
|
Infineon Technologies
|
MOSFET N-CH 100V 70A TO263-3 |
|
Original |
PDF
|
IPB50N12S3L15ATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL_100+ |
|
Original |
PDF
|
IPB50R140CP |
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 500.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 140.0 mOhm; ID(max) @ TC=25°C: 23.0 A; IDpuls (max): 56.0 A; |
|
Original |
PDF
|
IPB50R140CPATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 23A TO-263 |
|
Original |
PDF
|
IPB50R199CP |
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 500.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 199.0 mOhm; ID(max) @ TC=25°C: 17.0 A; IDpuls (max): 40.0 A; |
|
Original |
PDF
|
IPB50R199CPATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 17A TO-263 |
|
Original |
PDF
|
IPB50R250CP |
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 500.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 250.0 mOhm; ID(max) @ TC=25°C: 13.0 A; IDpuls (max): 31.0 A; |
|
Original |
PDF
|
IPB50R250CPATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 13A TO-263 |
|
Original |
PDF
|
IPB50R299CP |
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 500.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 299.0 mOhm; ID(max) @ TC=25°C: 12.0 A; IDpuls (max): 26.0 A; |
|
Original |
PDF
|
|
IPB50R299CPATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 12A TO-263 |
|
Original |
PDF
|
IPB530N15N3G |
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 21A TO263-3 |
|
Original |
PDF
|
IPB530N15N3GATMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 21A TO263-3 |
|
Original |
PDF
|