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    IPB34CN10N G Search Results

    IPB34CN10N G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPB34CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 27A TO263-3 Original PDF
    IPB34CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 33.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 27.0 A; Original PDF
    IPB34CN10NGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 27A TO263-3 Original PDF
    SF Impression Pixel

    IPB34CN10N G Price and Stock

    Infineon Technologies AG IPB34CN10NGATMA1

    MOSFET N-CH 100V 27A D2PAK
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    DigiKey IPB34CN10NGATMA1 Reel
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    Infineon Technologies AG IPB34CN10NG

    OPTIMOS2 POWER-TRANSISTOR Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB34CN10NG 47
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