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LTC4307IMS8 Linear Technology IC BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, MSOP-8, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LTC4307CMS8 Linear Technology IC BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, MSOP-8, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LTC1478CS8 Linear Technology IC BUF OR INV BASED PRPHL DRVR, PDSO8, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LT1614IMS8#TR Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614CS8#TRPBF Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614IS8 Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614CS8#PBF Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614CS8 Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614CS8#TR Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614IMS8 Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614CMS8#PBF Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1614IS8#TR Linear Technology LT1614 - Inverting 600kHz Switching Regulator; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

INVERTER 10kW

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Information Part Number Description OPF500 Buffer, 10kW Pull-Up Plastic Cap Component OPF505 Buffer, 10kW Pull-Up Metal Can Component OPF507 Buffer, 10kW Pull-Up Metal ST Receptacle OPF510 Inverter, 10kW Pull-Up Plastic Cap Component OPF512 Inverter, 10kW Pull-Up Metal ST , Inverter: PIN < 0.1 µW 0.4 V Buffer: PIN < 0.1 µW Inverter: PIN > 2.0 µW 12.0 mA No , Inverter tf Fall Time 300 100 ns Inverter Buffer BW Bandwidth tr PWD Pulse OPTEK Technology
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OPF300
Abstract: microgrids, energy storage, and inverter test applications, the TerraSASâ"¢ series photovoltaic (PV , to test the behavior of a grid tied inverter under realistic conditions for cloud shadowing and , energy harvest delivered in a given situation. Inverter designers use these accuracy and efficiency , , 10kW, and 15KW increments. The 80V units are available in two power levels: 1200W for microinverters , adding a linear regulation output stage. 600V units are available in 5kW, 10kW, and 15kW versions AMETEK
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ETS1000 1000V ETS600 ETS80

SCHEMATIC 10kw inverter

Abstract: INVERTER 10kW module solution. For a 10kW inverter, the current carrying requirements of each switch is about 400A , A 42V Inverter/Rectifier for ISA using Discrete Semiconductor Components Anthony F. J. Murray , Future Transportation Technology Conference, August 2001 ABSTRACT: A demonstration inverter has been built to illustrate the feasibility of implementing an ISA inverter in a 42V automotive powernet using , system will be a three-phase inverter/rectifier, responsible for supplying power to the 42V loads and
International Rectifier
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SCHEMATIC 10kw inverter INVERTER 10kW 10kw inverter 3 phase inverter ir2130 4614 mosfet 10kw dc-dc
Abstract: DTD114EK NPN 500mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 500mA 10kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD114EK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of lInner circuit an inverter circuit without connecting external , Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part ROHM
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DTB114EK R1120A

SCHEMATIC 10kw inverter

Abstract: INVERTER 10kW R1 (NOM) 1KW 2.2KW 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW R2 (NOM) 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW MARKING P02 P05 P06 P09 P10 P11 P14 P15 P18 P21 P22 E D G H K J D M , 2 GND(+) GND (+) Schematic and Pin Configuration Equivalent Inverter Circuit Maximum
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DDTA124XCA 10kw inverter schematic INVERTER 10kW diagram p06 sot-23 DDTA123JCA-7-F POWER SUPPLY BOARD 04- 94V0 J-STD-020C MIL-STD-202 DDTA113ZCA DDTA123YCA DDTA123JCA DDTA143XCA

SCHEMATIC 10kw inverter

Abstract: DDTA114WE Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). J MARKING 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW P02 P05 P06 P09 P10 P11 P14 P15 P18 , OUT 3 2 E GND(+) GND (+) Schematic and Pin Configuration Equivalent Inverter , 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 0.50 M C DDTA113ZE DDTA123YE DDTA123JE
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DDTA143XE DDTA143FE DDTA143ZE DDTA114YE DDTA114WE DDTA124XE transistor marking p02
Abstract: VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) 50V 100mA 10kW 10kW (1) (2 , Resistors, R1 = R2 = 10kW. (4) (3) 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , IMH11AFRA IMH11A OUT (6) Inverter circuit, Interface circuit, Driver circuit GND (4) OUT (4 ROHM
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EMH11 UMH11N EMH11FHA UMH11NFHA AEC-Q101 SC-107C
Abstract: and Tr2 VCC -50V -100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5 , the configuration of an inverter circuit without connecting external input resistors (see inner , Resistors, R1 = R2 = 10kW. (6) (5) (2) (5) (4) (3) UMB11NFHA UMB11N SOT-353 (SC , / UMB11N IMB11AFRA IMB11A OUT (6) Inverter circuit, Interface circuit, Driver circuit GND (4 ROHM
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EMB11FHA EMB11 DTA114E SC-88 SC-74

marking F24

Abstract: 10kw inverter DTD114EK NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 OUT IN VCC IC(MAX.) R1 R2 50V 500mA 10kW 10kW GND DTD114EK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , , Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. DTD114EK Package
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marking F24 SOT-346 KW transistor marking code F24
Abstract: VCC IC(MAX.) R1 R2 Value EMT6 50V 100mA 10kW 10kW (6) (1) (2) (5) (4) (3) Value -50V -100mA 10kW 10kW IC(MAX.) R1 R2 (1) EMD3 EMD3FHA (SC , resistors enable the configuration of an inverter circuit without connecting external input resistors (see , lApplication R2 GND (6) R2 R1 DTr1 Inverter circuit, Interface circuit, Driver circuit (3 ROHM
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R1102A

FD333s

Abstract: SCHEMATIC 10kw inverter ac 20 RL = 10kW RL = 10k W OUTPUT VOLTAGE RANGE ­ ±Volts INPUT COMMON MODE RANGE ­ ±Volts , & Phase Margin vs. Frequency ­6­ REV. B AD795 30 RL = 10kW 25 OUTPUT VOLTAGE ­ , 10kW +VS 0.1mF 5ms 20V 10mV 100 90 7 2 AD795 3 4 90 10 10kW VIN 10 VOUT 6 CL 100pF RL 0.1mF 10kW 0% 0% ­VS 5V Figure 24. Unity Gain Inverter Figure 25. Unity Gain Inverter Large Signal Pulse Response +V S 0.1mF Figure 26. Unity
Analog Devices
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AD795K FD333s SCHEMATIC 10kw inverter ac the equivalent of AD795 AD795JR MS-012AA OPA-111 OPA-121 AD795J C00845

INVERTER 10kW

Abstract: N05 TRANSISTOR MARKING CODE DDTC144VUA DDTC144WUA 1KW 2.2KW 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW N02 N05 N06 N09 N10 N11 N14 N15 N18 , ) Equivalent Inverter Circuit Schematic and Pin Configuration @ TA = 25°C unless otherwise specified
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DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA N05 TRANSISTOR MARKING CODE DDTC124XUA DDTC123YUA-7-F 10KW DDTC114WUA

SCHEMATIC 10kw inverter

Abstract: INVERTER 10kW DDTA144WKA 1KW 2.2KW 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW P02 P05 P06 P09 P10 P11 P14 P15 P18 P21 P22 , ) GND (+) Schematic and Pin Configuration Equivalent Inverter Circuit @ TA = 25°C unless
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DDTA113ZKA DDTA123YKA DDTA123JKA DDTA143XKA DDTA143FKA DDTA143ZKA DDTA114WKA DDTA114YKA DDTA124XKA
Abstract: EMG9 / UMG9N / FMG9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 10kW IC(MAX.) R1 , -107BB) UMG9N SOT-353 (SC-88A) SMT5 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (1) (2 , enable the configuration of an inverter circuit without connecting external input resistors (see inner , ) OUT Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package ROHM
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SC-107BB SC-74A

DTC014EUB

Abstract: UMT3F DTC014E series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 50V 100mA 10kW 10kW DTC014EM (SC-105AA) UMT3F OUT IN GND DTC014EEB (SC-89) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC014EUB
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UMT3F DTA014E SC-85

MARKING H11

Abstract: (6) (5) (4) VCC IC(MAX.) R1 R2 50V 100mA 10kW 10kW SMT6 EMH11 (SC-107C) (4) (5) (6) (3) (2) (1) UMH11N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit , circuit EMH11 / UMH11N OUT (6) IN (5) GND (4) OUT (4) IMH11A IN (5) GND (6) lApplication Inverter
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MARKING H11
Abstract: EMD30 NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 , -30V -200mA 1kW 10kW IC(MAX.) R1 R2 lFeatures lInner circuit 1) Both the DTC114E chip and DTB713Z chip in one package. 2) Built-in bias resistors enable the configuration of an inverter , lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. EMD30 ROHM
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SCHEMATIC 10kw inverter

Abstract: DDTC144VKA 1KW 2.2KW 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW N02 N05 N06 N09 N10 N11 N14 N15 N18 N21 N22 IN E , : 0.006 grams (approximate) R1 E GND (0) Equivalent Inverter Circuit Note: 1. No purposefully
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DDTC113ZKA DDTC123YKA DDTC123JKA DDTC143XKA DDTC143FKA DDTC143ZKA DDTC144VKA DDTC144WKA DDTC114WKA DDTC114YKA
Abstract: EMD29 NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 , -12V -500mA 1kW 10kW IC(MAX.) R1 R2 lFeatures lInner circuit 1) Both the DTC114E chip and DTB513Z chip in one package. 2) Built-in bias resistors enable the configuration of an inverter , lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. EMD29 ROHM
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Abstract: DTA014E series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT IC(MAX.) R1 R2 VCC -50V -100mA 10kW 10kW DTA014EM (SC-105AA) UMT3F OUT IN GND DTA014EEB (SC-89) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA014EUB ROHM
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Abstract: EMG9 / UMG9N / FMG9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 10kW IC(MAX.) R1 , -107BB) UMG9N SOT-353 (SC-88A) SMT5 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (1) (2 , enable the configuration of an inverter circuit without connecting external input resistors (see inner , ) OUT Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package ROHM
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SCHEMATIC 10kw inverter

Abstract: 10kw inverter 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW P02 P05 P06 P09 P10 P11 P14 P15 P18 P21 P22 Maximum Ratings B IN B 1 3 C OUT 2 E GND(+) GND (+) Equivalent Inverter Circuit Schematic
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DDTA143FCA DDTA143ZCA DDTA114YCA DDTA114WCA DDTA144VCA DDTA144WCA

INVERTER 10kW

Abstract: ) (5) (4) VCC IC(MAX.) R1 R2 -50V -100mA 10kW 10kW SMT6 EMB11 (SC-107C) (4) (5) (6) (3) (2) (1) UMB11N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTA114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit , circuit EMB11 / UMB11N OUT (6) IN (5) GND (4) OUT (4) IMB11A IN (5) GND (6) lApplication Inverter
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marking g9

Abstract: transistor marking G9 ) VCC IC(MAX.) R1 R2 50V 100mA 10kW 10kW SMT5 EMG9 (SC-107BB) (1) (2) (5) (4) (3) UMG9N SOT-353 (SC-88A) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter , EMG9 / UMG9N IN (3) GND (2) IN (1) IN (3) FMG9A GND (4) IN (5) lApplication Inverter circuit
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marking g9 transistor marking G9 SC107B SOT-353 marking code B2 fmg9

SCHEMATIC 10kw inverter

Abstract: INVERTER 10kW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW , OUT 2 R1 (NOM) 2 E GND(0) GND (0) Equivalent Inverter Circuit Schematic and
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DDTC113ZE DDTC123YE DDTC123JE DDTC143XE DDTC143FE DDTC143ZE DDTC114WE DDTC114YE DDTC124XE
Abstract: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCC -50V -100mA 10kW 10kW IC(MAX.) R1 , one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without , -107C) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (6) (5) (2) (5) (4) (3 , IMB11A OUT (6) Inverter circuit, Interface circuit, Driver circuit GND (4) OUT (4) IN ROHM
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Abstract: ) -50V -100mA 10kW 10kW (5) (5) (4) (1) (2) (4) (1) (2) (3) (3) EMB11 (SC-107C) UMB11N SOT-353 (SC-88) SMT6 (4) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5 , of an inverter circuit without connecting external input resistors (see inner circuit). 4) The , (2) IN (1) OUT lApplication Inverter circuit, Interface circuit, Driver circuit ROHM
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Abstract: EMD29 NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 , -12V -500mA 1kW 10kW IC(MAX.) R1 R2 lFeatures lInner circuit 1) Both the DTC114E chip and DTB513Z chip in one package. 2) Built-in bias resistors enable the configuration of an inverter , lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. EMD29 ROHM
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SCHEMATIC 10kw inverter

Abstract: DDTA114WUA 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW P02 P05 P06 P09 P10 P11 P14 P15 P18 P21 P22 R1 Type Code , GND(+) GND (+) Schematic and Pin Configuration Equivalent Inverter Circuit @ TA = 25
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DDTA113ZUA DDTA123YUA DDTA123JUA DDTA143XUA DDTA143FUA DDTA143ZUA DDTA114WUA ddta143xua-7-f DDTA114YUA
Abstract: ) 50V 100mA 10kW 10kW (1) (2) (6) (5) (4) (1) (3) EMH11 (SC-107C) SMT6 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (4) (3) 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting , OUT (6) Inverter circuit, Interface circuit, Driver circuit GND (4) OUT (4) IN (5 ROHM
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Abstract: ) (6) 50V 100mA 10kW 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3 , = R2 = 10kW. (5) (6) (3) 2) Two DTC114E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , OUT (6) Inverter circuit, Interface circuit, Driver circuit GND (4) OUT (4) IN (5 ROHM
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mosfet based power inverter project

Abstract: hybrid vehicle power inverter solutions geared towards more sustainable mobility choices. 5 6 1 Main Inverter 4 3 The inverter , and inductive charging solutions are also available. 5 Auxiliary Inverter Instead of being , /HEVs 9 1 4 3 Main Inverter With an electric drivetrain, the inverter controls the electric , , asynchronous or brushless DC, the inverter always functions in a similar way and is controlled by an integrated , does the inverter drive the electric motor, it also captures energy released through regenerative
Infineon Technologies
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mosfet based power inverter project hybrid vehicle power inverter SAK-TC1797-512F180E AC 1ED020I12FTA FS800R FS600R07A2E3 B136-H9536-X-X-7600
Abstract: DTA014E series PNP -100mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -100mA 10kW 10kW IC(MAX.) R1 R2 VMT3 , lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. OUT IN 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTA014E

Abstract: DTC014 DTA014E series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 -50V -100mA 10kW 10kW DTA014EM (SC-105AA) UMT3F OUT IN GND DTA014EEB (SC-89) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA014EUB
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DTC014

FS800R07A2E3

Abstract: FS50R07W1E3_B11A Inverter The inverter not only drives the electric motor, but is also used for regenerative braking and , . Off-board and inductive charging solutions are also available. 5 Auxiliary Inverter Instead of being , Electronics 9 1 Main Inverter With an electric drivetrain, the inverter controls the electric , , asynchronous or brushless DC, the inverter always functions in a similar way and is controlled by an , only does the inverter drive the electric motor, it also captures energy released through regenerative
Infineon Technologies
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FS800R07A2E3 FS50R07W1E3_B11A FS400R07A1E3 tc1782 dc-dc converter 50kW 100kW FS50R07W1E3
Abstract: DTC014E series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 VMT3 , lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. OUT IN 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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SCHEMATIC 10kw inverter

Abstract: INVERTER 10kW 2.2KW 2.2KW 4.7KW 4.7KW 4.7KW 10KW 10KW 22KW 47KW 47KW 10KW 10KW 47KW 10KW 22KW 47KW 47KW 4.7KW 47KW 10KW 22KW B Type Code N02 N05 N06 N09 N10 N11 N14 N15 N18 N21 N22 , Inverter Circuit Power Dissipation Thermal Resistance, Junction to Ambient Air (Note 1) Operating and
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DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC114ZCA DDTC144VCA n10 code sot 23 SOT23 MARKING CODE 72 DDTC114WCA DDTC114YCA
Abstract: (6) (5) (4) (5) 50V 100mA 10kW 10kW (4) (1) (1) (2) (2) (3) (3 , Value VCC -50V -100mA 10kW 10kW IC(MAX.) R1 R2 (2) (1) IMD3A SOT-457 (SC , ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , GND (6) R2 DTr1 R2 R1 Inverter circuit, Interface circuit, Driver circuit (3) GND ROHM
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Abstract: String Inverter Technology KACO blueplanet 02xi and 02x grid-tied inverter KACO new energy , communications set up Integrated inverter display: Easy to use push-button interface to configure the inverter and access stored PV system data on the LCD screen Model number blueplanet 1502xi/x , Continuous output current (A) (240 / 208 VAC) Integrated night switch: Activates inverter display even , monitoring option for residential systems up to 10kW.* 1500 2500 3500 5000 95.5/95 95.5/95 KACO
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RS485

optocoupler TLP 250

Abstract: inverter welding machine circuit board Isolation Line Voltage Typical Inverter Applications @ Pout 1KW ­ 10KW 1.Isolation barrier Converter Inverter Motor . AC CM DC Functional Isolation , TM EiceDRIVER 2ED020I12-FI 2 channel high and low side IGBT driver for inverter applications , supplies !Medical technologies !Welding equipment Inverter Inverter Driven Driven Applications Applications !Solar inverter 21-Mar-07 Copyright © Infineon Technologies 2006. All rights reserved
Infineon Technologies
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optocoupler TLP 250 inverter welding machine circuit board Block Diagram solar based ups igbt based welding machine WELDING INVERTER DIAGRAM INVERTER TRANSFORMER solar PG-DSO18 PDIP14/ HCPL-315J
Abstract: DTC114E series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 VMT3 , 1) Built-In Biasing Resistors, R1 = R2 = 10kW. UMT3F OUT OUT 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , 7) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit ROHM
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DTC114EEB DTC114EM DTC114EUB DTC114EE

DTC114E

Abstract: 10kW 10kW EMT3 DTC114EM (SC-105AA) UMT3F OUT IN GND DTC114EEB (SC-89) OUT IN GND lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC114EE
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SC-75A DTC114EUA SC-70 DTC114EKA

DTD713Z

Abstract: DTB713Z series PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -30V -200mA 1.0kW 10kW DTB713ZM (SC-105AA) DTB713ZE SOT-416 (SC-75A) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging
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DTD713Z
Abstract: VCC IC(MAX.) R1 R2 Value EMT6 50V 100mA 10kW 47kW (6) (1) (3) (4) (3) VCC -50V -100mA 10kW 47kW IC(MAX.) R1 R2 (4) EMD9 EMD9FHA (SC , resistors enable the configuration of an inverter circuit without connecting external input resistors (see , Inverter circuit, Interface circuit, Driver circuit (3) GND GND (6) R2 R1 (2) IN DTr1 ROHM
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DTC114Y DTA114Y
Abstract: DTB713Z series PNP -200mA -30V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -30V -200mA 1.0kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB713ZM (SC-105AA) lFeatures DTB713ZE SOT-416 (SC , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTD713Z series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface ROHM
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Abstract: frequency inverter can be up to 30% more efficient. While most of these systems are running day and night , a function of switching frequency (10kW DC link power, 50Hz output motor frequency) 3 25A , of switching frequency (10kW DC link power, 50Hz output motor frequency) Disadvantages of Planar , semiconductors needed for motor drive applications (rectifier, inverter and optional brake). The module has a Vincotech
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V23990-P589-A31-PM V23990-P569-F31-PM P589-A31

INVERTER 10kW

Abstract: 10kw inverter 5.750 8.718 1.484 $ $ POWER ON MAX LIES o o _ CONTROL FAILURE _ © o © A Ã" Ã' 6 1- INVERTER , . ,mLE:DIM. OUTLINE DWG. ESS 10KW STD. FIN: nJ P/L 481 DOC. REL DATE: GFS 7/17/9 ENG: DATE: ' SS 7/17
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ac INVERTER 10kW 10kw inverter input current analog voltmeter INVERTER 10kW ru 8718 EC016952 380VAC
Abstract: EMD38 NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 , -50V -100mA 1kW 10kW IC(MAX.) R1 R2 lFeatures lInner circuit 1) Both the DTC114Y chip and DTA113Z chip in one package. 2) Built-in bias resistors enable the configuration of an inverter , lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. EMD38 ROHM
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Abstract: UMA9N / FMA9A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCC -50V -100mA 10kW 10kW IC(MAX.) R1 R2 UMT5 SMT5 (3) (1) (2) (2) (1) (5) (4) (4) (5) (3) FMA9A (SC-74A) UMA9N SOT-353 (SC-88A) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. lInner circuit UMA9N 2 , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The ROHM
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Abstract: so-called solar farms, inverter efficiency takes on a completely new dimension. Every fraction of a , areas like solar inverters. The solar inverter market is still driven by the goal to reach highest , phase of a 3 phase clamped neutral point inverter. The outer switch is built by a combination of MOSFET , switch based modules at 6 and 10kW output power per phase Conclusion Power modules can provide benefits to power electronic equipment like solar inverter and UPS, especially at higher power levels, for Vincotech
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FZ06NPA070FP FZ06NRA045FH
Abstract: UMA9N / FMA9A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 UMT5 -50V -100mA 10kW 10kW (3) SMT5 (2) (1) (2) (1) (5) (4) (4) (5) FMA9A (SC-74A) UMA9N SOT-353 (SC-88A) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (3) lInner circuit 2 , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The ROHM
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SOT-353 marking code B2

Abstract: marking A9 UMA9N / FMA9A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 UMT5 (3) (2) (1) (4) (5) (5) (4) (3) (2) SMT5 (1) VCC IC(MAX.) R1 R2 -50V -100mA 10kW 10kW UMA9N SOT-353 (SC-88A) FMA9A (SC-74A) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTA114E chips in one package. 3) Emitter(GND)-common type 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting
ROHM
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marking A9

DDTA122TU

Abstract: DDTA142JU DDTA122LU DDTA142JU DDTA122TU DDTA142TU 0.22KW 0.47KW 0.22KW 0.47KW 10KW 10KW OPEN OPEN 1 , Configuration Maximum Ratings B 2 NEW PRODUCT Features Equivalent Inverter Circuit @ TA =
Diodes
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22KW DS30402

dc swinging choke

Abstract: sendust M80: Multi-E Choke High Energy Storage Chokes High Energy Storage Chokes for Inverter , chokes standard series for inverter applications. It is developed both for DC and AC inverter chokes. Its high inductance values (up to 5mH) make them perfect for high eficiency solar inverter aplication. It handles powers up to 10kW. M80 series is based on a combination of high performance multi-E , for Inverter Applications Permeability vs DC Bias The M80 series exhibits soft saturation. Due to
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dc swinging choke sendust UPS FERRITE multi gap inductor core design WELDING POWDER energy storage M80-2 M80-1 M80-0 M80-3

INVERTER 10kW

Abstract: ITQRM on-state MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FG4000HX-90DS HIGH POWER INVERTER USE PRESS , Aug.1998 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FG4000HX-90DS HIGH POWER INVERTER USE , ) PFGM = 10kW 101 7 5 PFG(AV) = 200W 3 2 VGT = 1.5V 100 7 5 3 2 Tj = 25°C IGT = , (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE = 30° 1800 , COMMUTATED TURN-OFF THYRISTORS FG4000HX-90DS HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF
Mitsubishi
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ITQRM on-state 120MAX

INVERTER 10kW

Abstract: 10kw inverter MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC4000BX-90DS HIGH POWER INVERTER USE PRESS , -90DS HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Test conditions VTM IRRM , FGC4000BX-90DS HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT , 3 2 THERMAL IMPEDANCE (K/W) GATE VOLTAGE (V) PFGM = 10kW 0.012 0.010 0.008 0.006 , TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 90° 120
Mitsubishi
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m30 tf 125
Abstract: DTC914TUB NPN 400mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 10kW UMT3F Collector Base Emitter DTC914TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown , at VI=7V 4) Built-in bias resistors enable the configuration of an inverter circuit without , : Base C : Collector E : Emitter E R1=10kW lApplication Muting circuit lPackaging ROHM
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INVERTER 10kW

Abstract: FGC4000BX-90DS MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC4000BX-90DS HIGH POWER INVERTER USE PRESS , COMMUTATED TURN-OFF THYRISTORS FGC4000BX-90DS HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL , .1998 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC4000BX-90DS HIGH POWER INVERTER USE PRESS PACK TYPE , THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) PFGM = 10kW VFGM = 10V 5 7 102 3 0.012 0.010 , (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 90° 120
Mitsubishi
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10kw inverter

Abstract: MSO2 M80: Multi-E Choke High Energy Storage Chokes for Inverter Applications M80 HIGH ENERGY , series for inverter ^ applications. It is developed both for DC and AC inverter chokes. Its high inductance g values (up to 5mH) make them perfect for high eficiency solar inverter aplication. It «/> handles powers up to 10kW. So u M80 series is based on a combination of high performance multi-E sendust , M80: Multi-E Choke High Energy Storage Chokes for Inverter Applications | PERFORMANCE CHARACTERISTICS
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MSO2 M801-31 PREMO M800 T-25 APPLIED SOLAR ENERGY

abb inverter

Abstract: solar inverters circuit diagram Solar inverters ABB string inverters PVI-10.0-I-OUTD 10kW PV DC + AC Designed for commercial systems, the PVI-10.0, isolated, three-phase inverter is highly unique in its ability to control , inverter suitable for installations with a reduced string size. The flat efficiency curves offer high , and output power range. Disconnect This inverter is feature rich enabling the desired design flexibility to master any design challenge. The input voltage range makes this inverter suitable for
ABB
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abb inverter solar inverters circuit diagram IEE1547 CSA-C22 0-I-OUTD-US208-NG 0-I-OUTD-US480-NG 0-I-OUTD-S1US-208-NG 0-I-OUTD-S1US-480-NG

westcode scr

Abstract: 100kw inverter ac to dc time. Three Phase Press-Pack IGBT inverter module featuring isolated water-cooling www - i xys . co m , inverter assembly There are several subtle concepts incorporated into this design to allow extended , ? / hiiSfiAR 100kW Electric cars 10kW Standard SCR / diode Ultra High Fast SCR /diode power High power Medium
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D-68623 westcode scr 100kw inverter ac to dc heavy duty induction heating N4400TC280 locomotives capacitors Semiconductor Group igbt

BC557 equivalent

Abstract: transistor bc547 COMPOSITE VIDEO 6-bit 0 to 12.7dB GAIN CONTROL COMPOSITE VIDEO SELECTABLE INVERTER TWO SELECTABLE VIDEO , that the modulation is negative, an inverter can be switched in. One of two different external video , Inverter Gain Video Input to SCART Outputs Gain Bandwidth for 1VPP input measured on Pins VIDEEM , 10kW 10kW 2.3mA IN 1µA 25kW GND 0V GND 0V S3 VID OUT I black level is I2C , . 63 S3 VID OUT 2.3mA VID MUX 10kW Figure 6 25kW GND 0V 16.7kW I Black Level GND
STMicroelectronics
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STV0056AF TQFP64 BC557 equivalent transistor bc547 33c66 ANRS NOISE REDUCTION SYSTEM STV0042 5-10MH 06HEX 46HEX

westcode scr

Abstract: heavy duty induction heating right price - first time and every time. Three Phase Press-Pack IGBT inverter module featuring isolated , fed H-Bridge inverter assembly There are several subtle concepts incorporated into this design to , isrp>=; 100kW Electric cars 10kW Hr" "ijFSpèf- -fC\ I Standard SCR / diode Ultra High Fast SCR/diode
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power electronic N4400 three phase fully controlled rectifier WESTCODE IXYS SCR MODULE Gate Drive igbt for induction heating

static characteristics of mosfet and igbt

Abstract: P969F . 4: booster + mixed inverter bridge NPC topologies will play a significant role for applications , in parallel with an PTIGBT(dashed line). f=16kHz, PN = 10kW Fig. 6: efficiency comparison: mixed , following 3 level inverter topology is able to gain further efficiency with the usage of higher voltage , Neutral-Point-Clamped PWM Inverter (1981), AKIRA NABAE, ISAO TAKAHASHI, HIROFUMI AKAGI CoolMOS is a trade mark of
Vincotech
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static characteristics of mosfet and igbt P969F H-2060

advantage and disadvantage of igbt

Abstract: to improve both the overall and the maximum load efficiency. Fig. 4: booster + mixed inverter , =16kHz, PN = 10kW Fig. 6: efficiency comparison: mixed NPC (solid) vs. mixed, paralleled NPC (dashed , already incorporated. References The following 3 level inverter topology is able to gain further , IGBT power switch, Jens Peter Kaerst, Klaus F. Hoffmann A New Neutral-Point-Clamped PWM Inverter
Vincotech
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advantage and disadvantage of igbt

EIAJ-SC74A

Abstract: marking code C4 Sot 23-5 (3.3µF nominal) for standard voltage inverter applications. With a few additional components a positive , Package MAX828SNTR Voltage Inverter February, 2000 ­ Rev. 0 5 C+ 1 + C2 1 , Voltage Range (RLOAD = 10kW) - - 5.5 FOSC Oscillator Frequency (TA = 25°C) MAX828 , Voltage Range (RLOAD = 10kW) 1.5 - 5.5 FOSC Oscillator Frequency MAX828 MAX829 6.0 , 6.1 100 8.3 Vin+ 290 3.3 *10 mF (MAX828) Voltage Inverter 2.9 3 C1 + 4
ON Semiconductor
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SC74A EIAJ-SC74A marking code C4 Sot 23-5 sot23-5 marking code LDC Marking C4 SOT23-5 1N4148 1N5817 MAX828/829 MAX828/D
Abstract: ) (6) (5) (5) 50V 100mA 10kW 47kW (4) (4) (1) (1) (2) (2) (3) (3 , Value VCC -50V -100mA 10kW 47kW IC(MAX.) R1 R2 (2) (1) IMD9A SOT-457 (SC , ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , lApplication (3) GND R2 DTr1 R2 Inverter circuit, Interface circuit, Driver circuit GND (6 ROHM
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nais inverter vf c operation manual

Abstract: nais VF-8X . I Max. Output Voltage Setting: The inverter output voltage can be adjusted by AVR (Automatic , acceleration at optimum V/F ratio. In addition, the stall prevention feature greatly reduces inverter trips , Output frequency accuracy Frequency setting resolution Inverter control Carrier frequency Start/Stop , Analog setting; 0-5V DC, 0-10V DC, 4-20mA DC, 10kW potentiometer, input impedance at 50kW (0-5V DC) 20kW , 33 33 37 W1 W 3-ø22 W2 3-øC1 190 156 D 22 D1 D2 Unit: mm Inverter
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nais inverter vf c operation manual nais VF-8X regenerative braking inverter nais VF-8X manual vf-8x 37KW motor wiring diagram

ccfl inverter dc 12v fluo

Abstract: lcd cable 40 pinouts RAM. RH A separate dc/ac inverter is included for power to the cold cathode lamp back light that is , EE RH + V R + RL = 10kW~20kW F18736 Pin assignment Pin Symbol Level Function 1 FG Frame , VHR - 3N 9 l = 160 4 . 0 4 0 . 0 Parts area 4 1 2 F18736 Inverter for RS stock , + 1 LCM + + 1 5 Common V DD In its standard form the inverter drives two CCFT simul- +5V V , O : Driving voltage for LCD V : 10kW~20k R W Figure 4 46.0 15 max 38.1 6.0 Pin
RS Components
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ccfl inverter dc 12v fluo lcd cable 40 pinouts Z80 INTERFACE lcd display cga to vga converter cga ega vga converter Video cable colour code
Abstract: DTD114GK NPN 500mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCEO IC R 50V 500mA 10kW SMT3 Collector Base Emitter DTD114GK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No ROHM
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DTB114GK

Universal LCD inverter pinout

Abstract: 24 pin stn lcd pinout details 64Kbyte external RAM. A separate dc/ac inverter is included for power to the cold cathode lamp back , 0.49 35.0 66.0 59.5 54.0 39.0 Parts area Parts area Inverter for RS stock no. 564-059 , form the inverter drives two CCFT simultaneously. Connect to terminals 4 and 5 to drive CCFT in RS , +5V. A separate dc/ac inverter is included for power to the electroluminescent tile back light that , : Driving voltage for LCD VR : 10kW~20kW 3 287-0514 Figure 6 180.0 176.0±0.3 164.0 132.0±0.3
RS Components
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Universal LCD inverter pinout 24 pin stn lcd pinout details lcd ibm pinout 9 pin socket cga 20 pinout LCD monochrome 320 x 64 CCFL MDA 2020
Abstract: DTB113ZK PNP -500mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -500mA 1kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTB113ZK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , , Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. DTB113ZK ROHM
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DTD113ZK/ DTD113ZU

pnp 500ma 40v

Abstract: KW SOT346 DTB114TK PNP -500mA -40V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 Collector Base Emitter VCEO IC R -40V -500mA 10kW DTB114TK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , Switching circuit, Inverter circuit, Interface circuit, Driver circuit lInner circuit lPackaging
ROHM
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pnp 500ma 40v KW SOT346
Abstract: EMB4FHA / UMB4NFHA EMB4 / UMB4N PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet AEC-Q101 Qualified lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT6 UMT6 (6) -50V -100mA 10kW (1) (2) (6) (5) (4) (1) (3 , bias resistors enable the configuration of an inverter circuit without connecting external input , (2) Base (3) Collector lApplication Inverter circuit, Interface circuit, Driver circuit ROHM
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DTA114T
Abstract: EMH9FHA / UMH9NFHA / IMH9AFRA EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4 , ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , -457 (SC-74) lInner circuit EMH9 UMH9N EMH9FHA // UMH9NFHA IMH9AFRA IMH9A OUT (6) Inverter ROHM
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Abstract: DTA144VKA PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 OUT IN GND VCC IC(MAX.) R1 R2 lFeatures -50V -100mA 47kW 10kW DTA144VKA SOT-346 (SC-59) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , NPN Types :DTC144VKA 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit ROHM
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hitachi invc132

Abstract: SP14Q001 tLC tsetup thold twc Min 63 50 50 80 80 100 100 125 Typ - INVERTER AND CONNECTORS Recommended Inverter HITACHI INVC132, INVC196 Lamp Connector JAE IL-G-4S-S3C23 Note1: Note 2: Note 3 , X81 X160 D3 X161 IC7 IT IS RECOMMENDED TO ADD FUS (1 A) TO VDD LINE NOTE 2: VR = 10kW
Hitachi Semiconductor
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SP14Q001 hitachi invc132 IL-G-4S-S3C2 Y160 Y318 CFL lamp Y241Y320

INVERTER 10kW

Abstract: hitachi invc132 50 80 80 100 100 125 Typ - INVERTER AND CONNECTORS Recommended Inverter HITACHI INVC132 , X161 VDD VSS VEE V0 IC7 IT IS RECOMMENDED TO ADD FUS (1 A) TO VDD LINE NOTE 2: VR = 10kW
Hitachi Semiconductor
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SP14Q002 Y320 T25 4 Hitachi DSA00511
Abstract: DTB114GK PNP -500mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCEO IC R -50V -500mA 10kW SMT3 Collector Base Emitter DTB114GK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No ROHM
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DTB114T

Abstract: DTB114TK PNP -500mA -40V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCEO IC R -40V -500mA 10kW SMT3 Collector Base Emitter DTB114TK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , ) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit
ROHM
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DTB114T

DTC114G

Abstract: DTC114G series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value UMT3 Collector Base Emitter Base Emitter SMT3 Collector VCEO IC R 50V 100mA 10kW DTC114GUA SOT-323 (SC-70) DTC114GKA SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without , Compliant. lInner circuit lApplication Switching circuit, Inverter circuit, Interface circuit, Driver
ROHM
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DTA114G
Abstract: DTD123YK NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 OUT IN GND VCC IC(MAX.) R1 R2 lFeatures 1) Built-In Biasing Resistors 50V 500mA 2.2kW 10kW DTD123YK SOT-346 (SC-59) lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , PNP Types :DTB123YK 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit ROHM
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KW SOT346

Abstract: DTB113ZK PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 OUT IN GND VCC IC(MAX.) R1 R2 lFeatures -50V -500mA 1kW 10kW DTB113ZK SOT-346 (SC-59) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner , NPN Types :DTD113ZK/ DTD113ZU 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter
ROHM
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Abstract: QSH29 NPN 500mA 60V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VCEO IC R 60V 500mA 10kW TSMT6 (6) (5) (4) (1) (2) (3) QSH29 (SC-95) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , ) Base (3) Collector lApplication Switching circuit, Inverter circuit, Interface circuit, Driver ROHM
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marking F52

Abstract: DTB123Y series PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value UMT3 OUT IN GND IN GND SMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -50V -500mA 2.2kW 10kW DTC123YU SOT-323 (SC-70) DTB123YK SOT-346 (SC-59) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging
ROHM
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marking F52 DTD123Y DTB123YU
Abstract: DTB114GK PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 Collector Base Emitter VCEO IC R -50V -500mA 10kW DTB114GK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTD114GK 5) Lead Free/RoHS Compliant. lInner circuit lApplication Switching circuit, Inverter circuit ROHM
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Abstract: UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline Parameter Tr1 and Tr2 VCEO IC R1 50V 100mA 10kW UMT6 (6) (1) (2) SMT6 (5) (4) (4) (3) (3) UMH8NFHA , enable the configuration of an inverter circuit without connecting external input resistors (see inner , DTr1 DTr2 R1 lApplication Inverter circuit, Interface circuit, Driver circuit (3 ROHM
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DTC114T
Abstract: DTA114G series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value UMT3 Collector Base Emitter Base Emitter SMT3 Collector VCEO IC R -50V -100mA 10kW DTA114GUA SOT-323 (SC-70) DTA114GKA SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without , Compliant. lInner circuit lApplication Switching circuit, Inverter circuit, Interface circuit, Driver ROHM
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marking G21

Abstract: DTD113Z series NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value UMT3 OUT IN GND GND IN SMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 50V 500mA 1kW 10kW DTD113ZU SOT-323 (SC-70) DTD113ZK SOT-346 (SC-59) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging
ROHM
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marking G21

SC-107C

Abstract: marking B4 SOT-353 EMB4 / UMB4N PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6) (5) (1) (2) (3) (4) (1) (2) (3) UMT6 (6) (5) (4) VCEO IC(MAX.) R1 -50V -100mA 10kW EMB4 (SC-107C) UMB4N SOT-353 (SC-88) lFeatures 1 , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The , lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. EMB4
ROHM
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marking B4 SOT-353 Transistor SOT-353 B4

BC547

Abstract: A12V Dual In-Line Package) ORDER CODE: STV0042A/Z s Selectable Composite Video Inverter s Two , modulation is negative, an inverter can be switched in. One of two different external video de-emphasis , CLAMPIN Pins1 Figure 11: UNCLDEEM Pin1 VDD 9V 60W 50µA VCC 12V 4 10kW UNCL DEEM S2 VID RTN CLAMP IN 1 2.3mA IN 1µA GND 0V 1 10kW 25kW VREF 2.4V VDD 5V , GND 0V 1 10kW 20kW Ivar VREF 2.4V 1. IVAR is controlled by the maximum peak detection
STMicroelectronics
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BC547 A12V AN838 STV0042A SEL5618 MHz VCO SHRINK42
Abstract: DTD123YK NPN 500mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see , ) Complementary PNP Types :DTB123YK 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter ROHM
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KW SOT346

Abstract: DTD114GK NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value SMT3 Collector VCEO IC R 50V 500mA 10kW Base Emitter DTD114GK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTB114GK 5) Lead Free/RoHS Compliant. lInner circuit lApplication Switching circuit, Inverter circuit
ROHM
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DTC113Z

Abstract: DTC113Z series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value UMT3 OUT IN GND GND IN SMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 1kW 10kW DTC113ZUA SOT-323 (SC-70) DTC113ZKA SOT-346 (SC-59) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging
ROHM
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Abstract: EMH4 / UMH4N / IMH4A EMH4FHA / UMH4NFHA / IMH4AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 10kW IC(MAX.) R1 EMT6 (6) (1) (2) UMT6 (5) (4) SMT6 (4 , enable the configuration of an inverter circuit without connecting external input resistors (see inner , (3) Emitter (2) Base (1) Collector lApplication Inverter circuit, Interface circuit ROHM
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schematic diagram UPS inverter three phase

Abstract: schematic diagram UPS 3 phase inverter APPLICATION NOTE ® PULSE CONTROLLED INVERTER by J. M. Bourgeois ABSTRACT 1 , inverter is becoming easier and less expensive. Power MOSFETs and IGBTs, with their simple gate drive , construction using tracks on a Printed Circuit Board as its windings. 3. PULSE CONTROLLED INVERTER The major feature of this inverter is that the upper level interface is controlled by pulses in such a way , inverter drive; the digital controller generates three conventional output signals for the lower gate
STMicroelectronics
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schematic diagram UPS inverter three phase schematic diagram UPS 3 phase inverter SCHEMATIC 10kw POWER SUPPLY WITH IGBTS brushless motor 10kW schematic diagram UPS inverter phase schematic diagram dc-ac inverter AN522/1093

SA571 application note

Abstract: SCHEMATIC 10kw inverter ac INVERTER IN R3 R3 20kW VARIABLE GAIN â' VREF R4 30kW RECT IN R1 10kW 1.8V OUTPUT + , ) e t + 10kW *t t 0 â'10 â'20 â'30 â'40 â'50 â'60 â'70 â'80 â'40 â'30 â , DG 4 7, 10 VREF 2.2mF 10kW V2 2, 15 A compensation scheme built into the DG cell , RECTIN â' R1 â'40 NOISE â'80 INVIN DG 0dB â'40 R3 2,15 10kW â , REF R4 V+ â' + R5 10kW CR R Ç" 1.8V DC + Ç'1 ) 30kW DCTOT The output of the
ON Semiconductor
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SA571 application note SA571 SA571N SA571D SA571/D

SA571 application note

Abstract: sa571 SA571 THD TRIM R3 INVERTER IN R3 20kW VARIABLE GAIN R4 30kW RECT IN R1 10kW RECTIFIER RECT CAP VREF , time is shown by this equation. G(t) + (G initial * G final) e * tt ) G final ; t + 10kW x C RECT , inverting input connected to the DG cell output as well 2.2mF 10kW V2 2, 15 4 Figure 3. Typical Test , 13 1,16 CRECT GND PIN 4 OUTPUT 7,10 -40 NOISE -80 -40 2,15 10kW -80 Figure 4. Restricted , to become IG, the gain control current. I = VIN / R1 V+ R1 VIN CR RS 10kW IG R DCTOT 1.8V
ON Semiconductor
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SOIC-16 PDIP-16

datasheets of op-amp ic 741

Abstract: pin diagram of 741 op-amp Number: SA571/D SA571 THD TRIM DG IN R2 20kW INVERTER IN R3 R3 20kW VARIABLE GAIN - VREF R4 30kW RECT IN R1 10kW 1.8V OUTPUT + RECTIFIER RECT CAP Figure 1. Block , (G initial * G final) e t + 10kW *t t 0 -10 -20 -30 -40 -50 -60 -70 -80 -40 -30 , DG 4 7, 10 VREF 2.2mF 10kW V2 2, 15 A compensation scheme built into the DG cell , -20 GIN 0dB R2 3,14 2,15 10kW -80 INVIN 6,11 5,12 20kW DG - R1 -40
ON Semiconductor
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datasheets of op-amp ic 741 pin diagram of 741 op-amp rectifier schematic sa571 equivalent audio compressor expander IC DATASHEET OF IC 741

vfo 200v 0.4kw

Abstract: vfo 200v 1.5kw : 0.1Hz (1Hz over 100Hz), Analogue setting: 0.1Hz (50/60Hz mode) Inverter control method Carrier , : Potentiometer (10kW, 1/4 or more), 0 to 5V, 0 to 10V, 4 to 20mA (Connect a 200, 1/4W or more external resistor , frequency setting, always connect a 200, 1/4W resistor. (When no resistor is connected, the inverter may , 0.4kW inverter is equipped with a non-regenerative brake. Make sure the brake resistor is connected to
-
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BFV00042G BFV00072G BFV00152G BFV00374 vfo 200v 0.4kw vfo 200v 1.5kw vfo 0.75kw Inverter Diagram 230v dc motor drive circuit diagram 0.75KW 3 phase regenerative braking BFV00022D BFV00042D BFV00072D BFV00152D

SA571 application note

Abstract: /D SA571 THD TRIM R3 INVERTER IN R3 20kW VARIABLE GAIN R4 30kW RECT IN R1 10kW RECTIFIER RECT , 10kW x C RECT COMPRESSOR OUTPUT LEVEL OR EXPANDOR INPUT LEVEL (dBm) Figure 2. Basic Input-Output , VREF, and the inverting input connected to the DG cell output as well 2.2mF 10kW V2 2, 15 4 , 13 1,16 CRECT GND PIN 4 OUTPUT 7,10 -40 NOISE -80 -40 2,15 10kW -80 Figure 4. Restricted , to become IG, the gain control current. I = VIN / R1 V+ R1 VIN CR RS 10kW IG R DCTOT 1.8V
ON Semiconductor
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SA571

Abstract: SA571 application note : SA571/D SA571 THD TRIM R3 INVERTER IN R3 20kW VARIABLE GAIN R4 30kW RECT IN R1 10kW RECTIFIER RECT , initial * G final) e tR ) G final t + 10kW C RECT *t COMPRESSOR OUTPUT LEVEL OR EXPANDOR INPUT LEVEL , tied to VREF, and the inverting input connected to the DG cell output as well 2.2mF 10kW V2 2, 15 4 , OUTPUT 7,10 -40 NOISE -80 -40 2,15 10kW -80 Figure 4. Restricted Dynamic Range Channel , ) R DCTOT 1.8V 30kW 3 4 REF CR R5 10kW IG The output of the expander will bias up to
ON Semiconductor
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Abstract: Publication Order Number: NCY9100/D NCY9100 THD TRIM DG IN R2 20kW RECT IN R1 10kW INVERTER , by this equation. G(t) + (G initial * G final) t + 10kW *t et 0 â'10 â'20 â'30 â , V1 3, 14 V IN * V REF V + IN R2 R2 20kW DG 4 7, 10 VREF 2.2mF 10kW V2 2, 15 , RECTIN R1 2,15 10kW NOISE â'80 R2 3,14 â'40 â'40 R3 â'80 INVIN 6,11 , ' + CR Ç" 1.8V V+ R5 10kW The output of the expander will bias up to: V OUT DC + Ç ON Semiconductor
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mic epe

Abstract: SCHEMATIC 10kw POWER SUPPLY WITH IGBTS APPLICATION NOTE ® PULSE CONTROLLED INVERTER by J. M. Bourgeois ABSTRACT 1 , inverter is becoming easier and less expensive. Power MOSFETs and IGBTs, with their simple gate drive , windings. 3. PULSE CONTROLLED INVERTER The major feature of this inverter is that the upper level , less than 1 microsecond. For a three phase application, nine outputs are dedicated to the inverter , period of T1, to prevent spurious turn-on. Figure 3: Inverter pulse timing 4. USING A PULSED
STMicroelectronics
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mic epe pulse transformer driver ic schematic diagram dc-ac inverter three phase schematic diagram UPS inverter st6292 dc to ac inverter schematic diagram

SMT 3362

Abstract: INVERTER 10kW % Vo Rated)/Degree C 60-167 60 167 10.0 10kW 15kW X X X X 60-250 60 250 15.0 88 , Inverter shut-down, manual reset by On/Off recycle or by OUT button 5% Full Scale 0.05 to (1.02-1.05) x , 600-17 600 17 10.2 10kW X X X X 15kW 250-60 250 60 15.0 300-50 300 50 15.0 400-37.5 400 37.5 15.0 500-30 500 30 15.0 600-25 600 25 15.0 10kW 15kW X X X X , OUT button. Less than 1 Inverter shut-down, manual reset by On/Off recycle or by OUT button 5% Full
TDK-Lambda
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IEEE488 SMT 3362 3.3KW motor Nemic-Lambda logo Genesys Logic genesys RS-232 RS-485 750/1500W 000ADC 208VAC

2SA571

Abstract: SA571NG : SA571/D SA571 THD TRIM R3 INVERTER IN R3 20kW - VREF 1.8V OUTPUT + DG IN R2 20kW VARIABLE GAIN RECT IN R1 10kW R4 30kW RECTIFIER RECT CAP Figure 1. Block Diagram MAXIMUM RATINGS , initial * G final) e * tt ) G final ; t + 10kW x C RECT COMPRESSOR OUTPUT LEVEL OR EXPANDOR INPUT LEVEL , non-inverting input tied to VREF, and the inverting input connected to the DG cell output as well 2.2mF 10kW , DG IG R4 30kW VREF 1.8V OUTPUT 7,10 NOISE -80 -80 2,15 10kW 1,16 CRECT VCC PIN 13 GND
ON Semiconductor
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2SA571 SA571NG
Abstract: 50 200 10.0 N/A N/A N/A 60-167 60 167 10.0 10kW 15kW X X X X 60-250 60 , button. Less than 1 Inverter shut-down, manual reset by On/Off recycle or by OUT button 5% Full Scale , 10kW X X X X 15kW 250-60 250 60 15.0 300-50 300 50 15.0 400-37.5 400 37.5 15.0 500-30 500 30 15.0 600-25 600 25 15.0 10kW 15kW X X X X 60 120 60 350 5 X X , button. Less than 1 Inverter shut-down, manual reset by On/Off recycle or by OUT button 5% Full Scale TDK-Lambda
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400VAC 480VAC RS-232/RS-485 D-77855

100A/IGBT DRIVER SCHEMATIC

Abstract: igbt inverter reference schematics . Applications include three-phase full-bridge inverter like motor speed control and UPS systems (see Figure 1). Figure 1: TD350 in 1200V 3-phase inverter application HV DC TD350 TD350 TD350 Load TD350 , medium power systems, up to about 10kW. The main benefit of this is to reduce the global application , designed for 1200V, 3-phase inverter applications, especially for motor control and UPS systems. It covers , up to 10kW and simplifies the global power supply system for cost-sensitive applications
STMicroelectronics
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AN1944 100A/IGBT DRIVER SCHEMATIC igbt inverter reference schematics IGBT full bridge schematics IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE FP50R12KE3

EMG5

Abstract: SOT-353 marking code B2 EMG5 / UMG5N NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 EMT5 (5) (4) (1) (2) (3) (5) (4) Datasheet UMT5 (3) (2) (1) VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 10kW 47kW EMG5 (SC-107BB) UMG5N SOT-353 (SC , )-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without , ) OUT lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications
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EMG5
Abstract: DTA113Z series PNP -100mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -100mA 1kW 10kW IC(MAX.) R1 R2 EMT3 UMT3 OUT OUT IN IN GND GND DTA113ZE SOT-416 (SC-75A) DTA113ZUA SOT-323 (SC , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit ROHM
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DTA113ZKA DTC113ZUA/
Abstract: DTD543X series NPN 500mA 12V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 12V 500mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT IN GND OUT IN GND DTD543XM (SC-105AA) lFeatures 1) Built-In Biasing Resistors , inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors , ) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit ROHM
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DTD543XE DTB543X
Abstract: DTD743X series NPN 200mA 30V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 30V 200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT IN GND OUT IN GND DTD743XM (SC-105AA) lFeatures 1) Built-In Biasing Resistors , inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors , ) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit ROHM
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DTD743XE DTB743X
Abstract: DTB513Z series PNP -500mA -12V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -12V -500mA 1kW 10kW DTB513ZM (SC-105AA) DTB513ZE SOT-416 (SC-75A) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTD513Z
Abstract: UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter VCEO IC R1 Tr1 and Tr2 UMT6 SMT6 (6) (4) (5) (5) 50V 100mA 10kW (6) (4) (3) (1) (2) (2) (1) (3) IMH8A SOT-457 (SC , chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit , ) Emitter (5) Emitter (6) R1 DTr1 DTr2 R1 lApplication Inverter circuit, Interface ROHM
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Abstract: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech , leaders are inverter applications in the solar market, since in this sector higher efficiency leads to a , and the power electronics components. Examples of new 1~ and 3~ solar inverter topologies are presented. New ideas for cos(Phi) compensation and high efficient bi-directional inverter/converter options , linear High Efficiency Solar Inverter behavior, achieves a better result at partial Designs - Status Vincotech
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Abstract: DTA014Y series PNP -100mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -100mA 10kW 47kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA014YEB (SC-89) DTA014YM (SC-105AA) UMT3F , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTA014YUB DTC014Y
Abstract: DTC023Y series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 100mA 2.2kW 10kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC023YEB (SC-89) DTC023YM (SC-105AA) UMT3F , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTC023YUB DTA023Y
Abstract: DTC114W series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 50V 100mA 10kW 4.7kW IC(MAX.) R1 R2 EMT3 UMT3 OUT OUT IN IN GND GND DTC114WE SOT-416 (SC-75A) DTC114WUA SOT-323 (SC , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTC114WKA DTA114W
Abstract: DTD513Z series NPN 500mA 12V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 12V 500mA 1kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN IN GND GND DTD513ZM (SC-105AA) lFeatures DTD513ZE SOT-416 (SC , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTB513Z series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface ROHM
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Abstract: DTB543X series PNP -500mA -12V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -12V -500mA 4.7kW 10kW DTB543XM (SC-105AA) DTB543XE SOT-416 (SC-75A) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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dta114w

Abstract: DTA114W series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value EMT3 OUT IN GND IN GND UMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -50V -100mA 10kW 4.7kW DTA114WE SOT-416 (SC-75A) SMT3 OUT IN GND DTA114WUA SOT-323 (SC-70) 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA114WKA
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marking 56

Abstract: DTA023Y series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 lFeatures -50V -100mA 2.2kW 10kW DTA023YM (SC-105AA) UMT3F OUT IN GND DTA023YEB (SC-89) 1) Built-In Biasing Resistors. 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA023YUB (SC
ROHM
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marking 56
Abstract: DTD723Y series NPN 200mA 30V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 1) Built-In Biasing Resistors 30V 200mA 2.2kW 10kW DTD723YM (SC-105AA) DTD723YE SOT-416 (SC-75A) lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTB723Y
Abstract: DTB743X series PNP -200mA -30V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -30V -200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB743XM (SC-105AA) lFeatures DTB743XE SOT-416 (SC , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTD743X series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface ROHM
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Abstract: DTA014T series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 Collector Base Emitter Base Emitter EMT3F Collector VCEO IC R1 -50V -100mA 10kW DTA014TM (SC-105AA) UMT3F Collector Base Emitter DTA014TEB (SC-89) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA014TUB ROHM
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DTC014T

marking G4

Abstract: EMG4 / UMG4N / FMG4A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 EMT5 (5) (4) (1) (2) (3) (5) (4) Datasheet UMT5 (3) (2) (1) VCEO IC(MAX.) R1 50V 100mA 10kW SMT5 EMG4 (SC-107BB) (1) (2) (5) (4) (3) UMG4N SOT-353 (SC , ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , (2) Base (1) Base (3) FMG4A Emitter (4) Base (5) lApplication Inverter circuit, Interface
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marking G4
Abstract: DTD713Z series NPN 200mA 30V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 30V 200mA 1kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT IN GND OUT IN GND DTD713ZM (SC-105AA) lFeatures DTD713ZE SOT-416 (SC , an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias , :DTB713Z series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface ROHM
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Abstract: DTD723Y series NPN 200mA 30V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC 30V 200mA 2.2kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN IN GND GND DTD723YM (SC-105AA) lFeatures 1) Built-In Biasing , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The , Types :DTB723Y series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit ROHM
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Abstract: DTB123Y series PNP -500mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -500mA 2.2kW 10kW IC(MAX.) R1 R2 UMT3 SMT3 OUT IN IN GND GND DTC123YU SOT-323 (SC-70) lFeatures OUT DTB123YK SOT , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The , Types :DTD123Y series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit ROHM
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DTC014

Abstract: DTA014Y series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 lFeatures -50V -100mA 10kW 47kW DTA014YM (SC-105AA) UMT3F OUT IN GND DTA014YEB (SC-89) 1) Built-In Biasing Resistors. 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA014YUB (SC
ROHM
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Abstract: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures 1) Built-In Biasing , inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors , ) (1) IMH9A SOT-457 (SC-74) lInner circuit EMH9 / UMH9N IMH9A OUT (6) Inverter ROHM
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DTC014

Abstract: DTC014T series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 Collector Base Emitter Base Emitter EMT3F Collector VCEO IC R1 50V 100mA 10kW DTC014TM (SC-105AA) UMT3F Collector Base Emitter DTC014TEB (SC-89) lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC014TUB
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Abstract: DTA023Y series PNP -100mA -50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCC -50V -100mA 2.2kW 10kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA023YEB (SC-89) DTA023YM (SC-105AA) UMT3F , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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EMG5

Abstract: EMG5 / UMG5N NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT5 UMT5 (3) (5) (2) (1) (4) (4) (1) (2) (3) EMG5 (SC-107BB) lFeatures (5 , inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors , ) GND (2) (4) OUT IN (1) (5) OUT lApplication Inverter circuit, Interface circuit
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Abstract: DTB723Y series PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -30V -200mA 2.2kW 10kW DTB723YM (SC-105AA) DTB723YE SOT-416 (SC-75A) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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Abstract: -107C) UMD5N SOT-353 (SC-88) Parameter Value VCC -50V -100mA 4.7kW 10kW IC , package. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting , R2 (1) GND GND (4) R1 (2) IN (3) OUT lApplication Inverter circuit, Interface ROHM
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DTC144E DTA143X

DTC023YE

Abstract: DTC023Y DTC023Y series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 2.2kW 10kW DTC023YM (SC-105AA) UMT3F OUT IN GND DTC023YEB (SC-89) 1) Built-In Biasing Resistors. 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC023YUB (SC
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DTC023YE marking 66 201205

marking 52

Abstract: DTA123Y series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value EMT3 OUT IN GND IN GND UMT3 OUT VCC IC(MAX.) R1 R2 lFeatures -50V -100mA 2.2kW 10kW DTA123YE SOT-416 (SC-75A) SMT3 OUT IN GND DTA123YUA SOT-323 (SC-70) 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTA123YKA
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marking 52 DTC123Y

MARKING H9

Abstract: transistor h9 EMH9 / UMH9N / IMH9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 EMT6 (6) (5) (1) (2) (3) (4) (1) (2) (3) Datasheet UMT6 (6) (5) (4) VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 10kW 47kW SMT6 EMH9 (SC-107C) (4) (5) (6) (3) (2) (1 , bias resistors enable the configuration of an inverter circuit without connecting external input , (5) GND (4) OUT (4) IMH9A IN (5) GND (6) lApplication Inverter circuit, Interface circuit
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MARKING H9 transistor h9 H9 transistor marking
Abstract: DTD523Y series NPN 500mA 12V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 1) Built-In Biasing Resistors 12V 500mA 2.2kW 10kW DTD523YM (SC-105AA) DTD523YE SOT-416 (SC-75A) lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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DTB523Y
Abstract: DTD713Z series NPN 200mA 30V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 30V 200mA 1kW 10kW DTD713ZM (SC-105AA) DTD713ZE SOT-416 (SC-75A) lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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Abstract: DTC014T series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 10kW Base Collector Base Emitter Emitter DTC014TM (SC-105AA) DTC014TEB (SC-89) UMT3F , of an inverter circuit without connecting external input resistors (see inner circuit). 3) The , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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Abstract: DTC144V series NPN 100mA 50V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter VCC IC(MAX.) R1 R2 Value UMT3 SMT3 OUT 50V 100mA 47kW 10kW IN OUT IN GND GND DTC144VUA SOT-323 (SC-70) lFeatures DTC144VKA SOT-346 (SC , an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias , :DTA144V series 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface ROHM
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Abstract: EMB4 / UMB4N PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 10kW IC(MAX.) R1 EMT6 UMT6 (6) (6) (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMB4 (SC , chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit , ) Emitter (4) (1) Emitter (2) Base (3) Collector lApplication Inverter circuit, Interface ROHM
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Abstract: EMG4 / UMG4N / FMG4A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 10kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (4) (1) (2) (5) EMG4 (SC-107BB) with complete isolation to , configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The , ) Base (5) (1) Collector Inverter circuit, Interface circuit, Driver circuit lPackaging ROHM
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Abstract: EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 10kW IC(MAX.) R1 EMT6 (6) (1) (2) UMT6 (5) (4) SMT6 (4) lFeatures of the input. They also have , ) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input , ) Collector (3) Emitter (2) Base (1) Collector lApplication Inverter circuit, Interface ROHM
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Abstract: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3 , inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors , ) IMH9A SOT-457 (SC-74) lInner circuit EMH9 / UMH9N IMH9A OUT (6) Inverter circuit ROHM
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DTC114W A

Abstract: DTC114W DTC114W series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value EMT3 OUT IN GND IN GND UMT3 OUT VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 10kW 4.7kW DTC114WE SOT-416 (SC-75A) SMT3 OUT IN GND DTC114WUA SOT-323 (SC-70) 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit , Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC114WKA
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DTC114W A
Abstract: DTC014Y series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Value VMT3 OUT IN GND IN GND EMT3F OUT VCC IC(MAX.) R1 R2 lFeatures 50V 100mA 10kW 47kW DTC014YM (SC-105AA) UMT3F OUT IN GND DTC014YEB (SC-89) 1) Built-In Biasing Resistors. 2) Built-in bias resistors enable the configuration of an inverter circuit without , . lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit DTC014YUB (SC ROHM
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marking H4

Abstract: EMH4 / UMH4N / IMH4A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 EMT6 (6) (5) (1) (2) (3) (4) (1) (2) (3) Datasheet UMT6 (6) (5) (4) VCEO IC(MAX.) R1 50V 100mA 10kW SMT6 EMH4 (SC-107C) (4) (5) (6) (3) (2) (1) UMH4N SOT , bias resistors enable the configuration of an inverter circuit without connecting external input , (6) Base (5) Emitter (4) Collector (4) IMH4A Base (5) Emitter (6) lApplication Inverter
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marking H4
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