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IGP10N60T Datasheet

Part Manufacturer Description PDF Type
IGP10N60T Infineon Technologies Low Loss IGBT in TrenchStop and Fieldstop technology Original

IGP10N60T

Catalog Datasheet MFG & Type PDF Document Tags

G10T60

Abstract: TRENCHSTOPâ"¢ Series IGP10N60T q Low Loss IGBT : IGBT in TRENCHSTOPâ"¢ and Fieldstop , PSpice Models : http://www.infineon.com/igbt/ Type IGP10N60T VCE IC VCE(sat),Tj=25°C Tj , "¢ Series IGP10N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit , IGP10N60T q Switching Characteristic , Inductive Load, at Tj=25 ï'°C 3) Parameter Symbol , . Diode from IKP10N60T 3 ns mJ Rev. 2.4 20.09.2013 TRENCHSTOPâ"¢ Series IGP10N60T q t
Infineon Technologies
Original
G10T60 PG-TO-220-3

G10T60

Abstract: IGP10N60T q TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology â , : >1s. Power Semiconductors 1 Rev. 2.2 June 06 IGP10N60T q TrenchStop® Series Thermal , . Power Semiconductors 2 Rev. 2.2 June 06 IGP10N60T q TrenchStop® Series 3) Switching , Semiconductors 3 Rev. 2.2 June 06 IGP10N60T q TrenchStop® Series t p=1µs T C =80°C 20A , temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.2 June 06 IGP10N60T q TrenchStop® Series 30A
Infineon Technologies
Original
PG-TO-220-3-1

g10t60

Abstract: diode 10a 400v IGP10N60T q TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology · · , IGP10N60T q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value , between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 June 06 IGP10N60T q , . Diode from device IKP10N60T Power Semiconductors 3 Rev. 2.2 June 06 IGP10N60T q , current as a function of case temperature (VGE 15V, Tj 175°C) Rev. 2.2 June 06 IGP10N60T q
Infineon Technologies
Original
diode 10a 400v TXD10L60

G10T60

Abstract: IGP10N60T IGP10N60T q TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology · · , ://www.infineon.com/igbt/ Type IGP10N60T C E PG-TO-220-3-1 VCE IC VCE(sat),Tj=25°C Tj,max , IGP10N60T q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value , between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Sep. 07 IGP10N60T q , . Diode from device IKP10N60T Power Semiconductors 3 Rev. 2.3 Sep. 07 IGP10N60T q
Infineon Technologies
Original

G10T60

Abstract: IKP10N60T TrenchStop Series IGP10N60T q Low Loss IGBT in Trench and Fieldstop technology · · · · Very , RthJC Symbol Conditions IGP10N60T q Max. Value 1.35 62 Unit K/W Value min. typ. 1.5 1.8 4.6 max , current 1) IGP10N60T q 551 24 17 62 7 100 nC nH A pF Ciss Coss Crss QGate LE IC(SC) V C E = 25V , 3 Rev. 2.1 Jan 05 TrenchStop Series IGP10N60T q t p=1µs 30A 25A 20A 15A 10A 5A 0A 10H , 30A 25A IGP10N60T q V GE =20V 15V V GE =20V 15V IC, COLLECTOR CURRENT 20A 15A 10A 5A 0A
Infineon Technologies
Original
Q67040S4684

IGP10N60T

Abstract: IKP10N60T TrenchStop Series IGP10N60T q Low Loss IGBT in Trench and Fieldstop technology â'¢ â'¢ â , Sep-04 IGP10N60T q TrenchStop Series Thermal Resistance Parameter Symbol Conditions , Sep-04 IGP10N60T q TrenchStop Series Dynamic Characteristic pF Input capacitance Ciss , 3 Rev. 2 Sep-04 IGP10N60T q TrenchStop Series tp =1µs T C =80°C 20A 15A T C , temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2 Sep-04 IGP10N60T q TrenchStop Series 30A 25A
Infineon Technologies
Original
P-TO-220-3-1

IKW40N120H3

Abstract: 30100 transistor 1,55 1,6 2,2 IGP10N60T 600 N 2-20kHz TO-220 Hard TRENCHSTOPTM 10 1
Infineon Technologies
Original
IKW40N120H3 IKW40N120T2 IHW40N60RF IKW40N60H3 IKW50N60T IKW75N60T 30100 transistor IKW40N60 IKW25N120H3 welding inverter N60H3 N120H2 N120H3 N100T N120T2 IHW30N60T

ice3b0565g

Abstract: ERNI rel 37 Datasheet, Infineon Technologies, Germany, 2007 [2] Infineon Technologies: IGP10N60T, Preliminary
Infineon Technologies
Original
ice3b0565g ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 AN-EVAL-IKCS12F60AA-1 IKCS12F60AA 110VAC EVAL-IKCS12F60AA