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LTC1272-5CCSW Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LTC1272-5ACSW Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LTC1272-5CCSW#PBF Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LTC1272-5ACSW#TRPBF Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LTC1272-5CCSW#TRPBF Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LTC1272-5CCSW#TR Linear Technology LTC1272 - 12-Bit, 3µs, 250kHz Sampling A/D Converter; Package: SO; Pins: 24; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices

IGBT in resonant converters

Catalog Datasheet MFG & Type PDF Document Tags

IXAN0049

Abstract: igbt inverter schematic induction heating ed as: conventional current source inverters as shown in gure 1 1] 2] resonant converters with a current source as exemplarily shown in gure 2 3] 4] 5] auxiliary resonant circuits used for soft , devices, Resonant converters, Resonantmode power supplies, Semiconductor devices, Soft switching, ZCS converters Abstract A new IGBT has been developed, providing reverse blocking capability. This feature is needed in various applications, such as in current source inverters, resonant circuits, bidirectional
IXYS
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two switch resonant buck converter

Abstract: zero current switch generally used in resonant converters, unless the base drive is provided by the resonant circuit itself , the resonant inductor LRES, and the resonant capacitor CRES connected in parallel. Energy is , used, in certain cases its parasitic inductance can be used as the resonant inductance (in both this , SWITCH A typical Zero Voltage Switch consists of a switch in series with a diode. The resonant capacitor is connected in parallel, and the resonant inductor is connected in series with this
STMicroelectronics
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600V igbt dc to dc buck converter

Abstract: 400V igbt dc to dc buck converter APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT , waveforms and turn-off losses of different IGBT types in ZC converters. Figure 5. ZV turn-on waveforms , CONCLUSIONS This paper presented a method of characterizing the behaviour of IGBTs in resonant converters , converters in the selection of IGBTs for use in their circuits. A method of characterizing IGBTs in resonant converters is developed and used to obtain graphs demonstrating the dependence of the power
STMicroelectronics
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STGE25N100

Abstract: 600V 30A igbt dc to dc buck converter APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT , turn-off losses of different IGBT types in ZC converters. Figure 5. ZV turn-on waveforms at 125oC , of comparing the behaviour of the same device in both resonant configurations, for converters , power,Tj = 125o C Figure 17. Comparison of losses for IGBT and MOSFET in a ZV Buck QRC RESONANT , paper presented a method of characterizing the behaviour of IGBTs in resonant converters. The
STMicroelectronics
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BSC 27 flyback

Abstract: induction heating circuits SPT IGBT High Frequency Applications: · induction heating · flyback converters · resonant-mode power supplies G E C TO-247 AD G C E C (TAB) IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA , short tail current for optimized performance in resonant circuits · HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current - optimized for resonant flyback converters , °C Maximum Ratings 1200 ± 20 65 41 70 VCES 10 300 V V A A A µs W Features · SPT IGBT - low saturation
IXYS
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stanag 3456

Abstract: ac Inverter schematics 10 kw switched thyristor-dual building block will now be examined in depth. RESONANT CONVERTERS INVERTERS WITH , methods in high frequency resonant converters", Y.Cheron, H.Foch, J.Roux, PCI proceedings, Munich, 1986 , FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode , methods possible in converters, the attractions of soft switching are examined in detail, as well as the , can be turned off (BJT, MOSFET, IGBT, GTO or MCT) in antiparallel with a diode D and a snubber
Advanced Power Technology
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Abstract: dissipation in the semiconductors. The resonant SoftSwing® [1] topology was selected to answer this , sufficiently. The new task is to develop a universal power module for motor drives and DC-DC converters in , converter in SoftSwing® resonant topology. The phase leg concept provides the flexibility to distribute , disadvantage of high power losses, resonant switching topologies are required, without becoming too complex , with softPHASE modules from Vincotech The Goal To increase the reliability and reduce cost in a Vincotech
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TO-258AA

Abstract: transistor 835 OM6503SC OM6504SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES · · · · · · · , The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER
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TO-258AA transistor 835 igbt ups schematic transistor 2 Amp 3 volt a2030 815 transistor MIL-S-19500

15N120

Abstract: IC IGBT 15N120 Converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching , IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES =±1200V IC25 = 25A , = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to , °C ± 1200 V ± 20 V 25 15 A A 30 600 A V 10 µs 300 W ·IGBT with
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IC IGBT 15N120 bi-directional switches IGBT 15n120 igbt igbt clip IXRP 15N120 IXYS

IGBT 50 amp 1000 volt

Abstract: 47N IGBT TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal , for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25Â , PIN SIP NOTE: IGBT s are also available In Z-Tab, dual and quad pak styles. Please call the factory , Ceramic Feedthroughs Available DESCRIPTION The IGBT power transistor features a high impedance insulated , QM6507SA IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions vibrices Collector
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OM6507SA IGBT 50 amp 1000 volt 47N IGBT 30 mhz power IGBT IGBT in resonant converters TO-254AA Package OM65Q7SA 150TYP

IC IGBT 15N120

Abstract: bi-directional switches IGBT resonant converters - induction heating - auxiliary switches for soft switching in the main current path , Blocking capability IGBT with Reverse 2 TO-263AB 1 3 1 = Gate; 2, TAB = Collector; 3 = Emitter TAB IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150 , 600 V TC = 25°C Maximum Ratings ± 1200 ± 20 25 15 30 600 10 300 V V A A A V µs W Features ·IGBT , coefficient of saturation voltage ·Epoxy of package meets UL 94V-0 Applications Converters requiring reverse
IXYS
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IC IGBT 15N120

Abstract: H1AA1 resonant converters - induction heating - auxiliary switches for soft switching in the main current path , Blocking capability IGBT with Reverse 2 TO-220AB 1 TAB 3 1 = Gate; 2, TAB = Collector; 3 = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150 , 600 V TC = 25°C Maximum Ratings ± 1200 ± 20 25 15 30 600 10 300 V V A A A V µs W Features ·IGBT , coefficient of saturation voltage ·Epoxy of package meets UL 94V-0 Applications Converters requiring reverse
IXYS
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H1AA1
Abstract: dimensions. © 2011 IXYS All rights reserved Converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - , 2.5 V IGBT with Reverse Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT ± 1200 Continuous IC25 IC90 TC = 25°C TC = 90 , SCSOA 600 V Ptot TC = 25°C Symbol A V µs â'¢ IGBT with NPT (non punch through IXYS
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IXAN0015

Abstract: 0015 , with particular emphasis on Zero Voltage Switching, resonant mode, resulting in lowest losses in switches. Fig. (9) shows a graph of comparison between (switching losses in) switch mode and resonant , , in resonant mode is so small that even in the event of a fault, such as arcing or moding in a , Home < IEEE PEDS 2001 - INDONESIA IXAN0015 Use of BiMOSFETs in Modern Radar , construction and new fabrication processes involved in making BiMOSFETs are described. Many characteristics
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0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing

19N220A

Abstract: 19n250a IGBT in High Voltage ISOPLUS i4-PACTM VCE(sat) = 3.2 V = 50 ns tf 1 5 Features IGBT , . B6 - 2 switched mode power supplies DC-DC converters resonant converters laser generators, x ray generators discharge circuits 0.5 K/W 022 IGES High Voltage IGBT - substitute for , High Voltage IGBTs Contents High Voltage IGBT VCES IC max VCE(sat) ISOPLUS , 19N220A IXLF 19N250A Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum
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high voltage igbt 19n250 ixlf 19n250a

high voltage igbt

Abstract: Advanced Technical Information High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IXLF 19N220A IC25 = 32 A IXLF 19N250A VCES = 2200/2500 V VCE(sat)= 3.2 V tf = 50 ns 1 5 IGBT Symbol VCES , converters resonant converters laser generators, x ray generators discharge circuits VCE = 25 V; VGE = 0 V , 3.6 2.2 130 3.9 8 0.15 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.5 K/W High Voltage IGBT - , -55.+150 -55.+125 2500 20.120 °C °C V~ N Dimensions in mm (1 mm = 0.0394") Characteristic Values min
IXYS
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IGBT in resonant converters

Abstract: ceis QM6507SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt. 8 A m p. N -C hannel IGBT In A H e rm e tic Metal Package FEATURES Isolated Hermetic Metal Package , bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @25°C PART NUMBER QM6507SA lc (Cont.) @ 90°C, A 8 V(BB)CES , -19500, TX, TXV And S Levels Low Conductive Losses Ceramic Feedthroughs Available DESCRIPTION The IGBT
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ceis

B3259

Abstract: B32922 X2 Industrial (e.g. IGBT, converters, SMPS) High pulse (stacked) B32620 B32621 Lighting (e.g , High frequency (wound) B32671Z . B32673Z Resonant circuits Impulse RFI Clamping , B32614 Axial General purpose, AC applications Snubbering Resonant ciruits Impulse Industrial (e.g. converter, IGBT) Very high pulse (wound) Consumer (e.g. SMPS, H-deflection) Very high , /60 Hz) B32923E/F . B32928E/F For connection in series with the mains MKP MKP MKP
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B32520 B32529 B32560 B32564 B32594 B32227 B3259 B32922 X2 B32924 X2 B3260 B32778 mkp B32572 B32573

IGBT 50 amp 1000 volt

Abstract: 10 amp igbt 1000 volt OM6507SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES · · · · · · · · Isolated , converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified , Available DESCRIPTION The IGBT power transistor features a high impedance insulated gate and a low , Emitter PACKAGE OPTIONS 6 PIN SIP MOD PAK NOTE: IGBTs are also available in Z-Tab, dual and
International Rectifier
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10 amp igbt 1000 volt MOD 534 50 amp 1000 volt IGBT

OM6507SA

Abstract: IGBT 50 amp 1000 volt QM6507SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input , transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART lc (Cont.) V(BR)CES VCE(oat , And S Levels Low Conductive Losses Ceramic Feedthroughs Available DESCRIPTION The IGBT power
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