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IFN363 Datasheet

Part Manufacturer Description PDF Type
IFN363 InterFET Silicon Junction Field-Effect Transistor Original
IFN363 InterFET N-Channel silicon junction field-effect transistor Original

IFN363

Catalog Datasheet MFG & Type PDF Document Tags

IFN152

Abstract: 2SJ44 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (â'" 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9
-
OCR Scan
T0-18

2sk152 equivalent

Abstract: IFN152 Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­
InterFET
Original
2sk152 equivalent INTERFET 10 V jfet databook JFET TO18
Abstract: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (â'"30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2 -
OCR Scan

2SK105 DGS

Abstract: 2SK105 Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process
InterFET
Original
2SK105 2SK105 DGS V6010 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59

2sk152 equivalent

Abstract: 2SJ44 _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0
-
OCR Scan

NJ450

Abstract: D45 TRANSISTOR Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All
InterFET
Original
D45 TRANSISTOR f36 transistor J108 J110 J109

2SK146

Abstract: 2SK147 equivalent Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44
InterFET
Original
IFN105 2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet 2SK105 Datasheet

2SK146

Abstract: 2SK147 equivalent Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­
InterFET
Original
equivalent transistor TO 2sk146 shiloh