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Part : MC68HC000IFN16R2 Supplier : Motorola Manufacturer : Rochester Electronics Stock : 498 Best Price : $24.65 Price Each : $24.65
Part : MC68010IFN10 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 6 Best Price : - Price Each : -
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IFN147 Datasheet

Part Manufacturer Description PDF Type
IFN147 InterFET N-Channel Silicon Junction Field-Effect Transistor Original
IFN147 InterFET N-Channel silicon junction field-effect transistor Original

IFN147

Catalog Datasheet MFG & Type PDF Document Tags

2SK147 equivalent

Abstract: 2SK147 Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current
InterFET
Original
2SK147 equivalent NJ450

IFN147

Abstract: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C â'¢ LOW NOISE AUDIO AMPLIFIER â'¢ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Min Gate Source Breakdown Voltage Test Conditions VGS(0ff) Drain Saturation Current (Pulsed) Unit
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OCR Scan
00Q0BG4

bpw21 op

Abstract: 2SK147 high capacitance photodiode. The LT1806 is used for its high gain bandwidth and low noise. The IFN147 , voltage noise, but they have high input capacitance (75pF max for the IFN147). Serendipitously, the
Linear Technology
Original
SFH213 BPW34B FD1500W BPW21 bpw21 op ir photodiode amplifier fast photodiode amplifier low noise ir photodiode amplifier 325MH ODD45W

2SK146

Abstract: 2SK147 equivalent /99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor , Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics
InterFET
Original
2SK105 2SK113 IFN105 NJ132 2SK146 2sk146 equivalent transistor sdg 2sk146 datasheet 2SK105 Datasheet 2SK17 2SK40 2SK59 IFN17

2SK146

Abstract: 2SK147 equivalent /99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor , Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics
InterFET
Original
2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFN146 IFP44

NJ450

Abstract: D45 TRANSISTOR Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All
InterFET
Original
D45 TRANSISTOR f36 transistor J108 J110 J109

2SK147 equivalent

Abstract: 2SK147 E6 IF N 1 4 7 8-94 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR · LOW NOISE AUDIO AMPLIFIER · Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Process NJ450 Max Unit V -1 nA pA V mA Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse
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OCR Scan
T0-18

2SK147

Abstract: ir photodiode amplifier ultralow voltage noise but they have high input capacitance (75pF max for the IFN147). Serendipitously , high gain bandwidth and low noise. The IFN1471 ultralow noise JFET operates at its IDSS (VGS = 0V
Linear Technology
Original
bpw21 amplifier jfet photodiode jfet photo diode BPW21 equivalent SFH213 amplifier design ideas LT1793