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Part Manufacturer Description PDF Samples Ordering
RDK-IDM-SBC Texas Instruments Single Board Computer IDM RDK ri Buy
HW-IDM-RDK Texas Instruments RDK-IDM Hardware Package Rev C ri Buy
HW-IDM-SBC Texas Instruments RDK IDM SBC Hardware Package Rev A ri Buy

IDM-10

Catalog Datasheet Type PDF Document Tags
Abstract: HEADER IDM-10 IDC-10 IDC-10 IDC-25MB IDC-25MB IDC-25FB IDC-25FB PCI-16 PCI-16 IDM-16 IDM-16 IDC-16 IDC-16 IDM-20 IDM-20 IDC-20 IDC-20 PCI-24 PCI-24 ... Original
datasheet

10 pages,
392.25 Kb

rs232 db15 pin male to db9 pin female s312a m642/5-1 Sub-miniature phone plug cable rs232 to idc 10 pin RJ12 db9 DB15 MALE TO DB9 FEMALE xlr to mini jack PJ-068 P-308-CCT 4 CONDUCTOR 3.5mm PLUG RJ45 to 3.5mm jack adapter datasheet abstract
datasheet frame
Abstract: DPX-70 5P4C Stack Pointer (SP;81h). The exact address of the 1 KB is dependent on the setting of the IDM1-0 bits. ... Original
datasheet

156 pages,
960.39 Kb

DS80C390 c1-m6c DS80C390 abstract
datasheet frame
Abstract: DPX-116 Stack Pointer (SP;81h). The exact address of the 1kB is dependent on the setting of the IDM1-0 bits. ... Original
datasheet

158 pages,
1091.83 Kb

DS80C390 D13T1 c1-m6c ic 8051 serial infrared tx DS80C390 abstract
datasheet frame
Abstract: dependent on the setting of the IDM1-0 bits. The 10-bit stack feature is not supported when the 4 KB SRAM ... Original
datasheet

155 pages,
766.32 Kb

DS80C390-FCR DS80C390 80C52 D13T1 equivalent D13T1 DS80C390 abstract
datasheet frame
Abstract: address of the 1 KB is dependent on the setting of the IDM1-0 bits. The 10-bit stack feature is not ... Original
datasheet

161 pages,
1540.88 Kb

DS80C390-FCR DS80C390 80C52 C1M6 D13T1 DS80C390 abstract
datasheet frame
Abstract: 2SM22 cd 74373 DPX22 80C400 DPL26 5121M The exact address of the 1kB is dependent on the setting of the IDM1-0 bits. SPECIAL-FUNCTION ... Original
datasheet

199 pages,
2502.58 Kb

74373 latch pin config 80C32 can baudrate prescaler DALLAS DS80C320 DS2502-E48 DS87C520 DS80C400-FNY DS80C400 DS80C390 DS80C320 80C40 ic 74373 datasheet D13T1 DS80C400 abstract
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Abstract: xxxx-17 80C40 1416M tH30 5121M The exact address of the 1kB is dependent on the setting of the IDM1-0 bits. SPECIAL-FUNCTION ... Original
datasheet

199 pages,
3951.07 Kb

80C32 DS2502-E48 DS80C320 DS80C390 DS80C400 DS80C400-FNY DS87C520 DS80C400 abstract
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Abstract: Rev: 12; 9/08 HIGH-SPEED MICROCONTROLLER USER'S GUIDE: NETWORK MICROCONTROLLER SUPPLEMENT COMMUNICATE WITH NEW AND LEGACY EQUIPMENT NETWORKED MICROCONTROLLER x3 SERIAL UARTs 8051 µC WITH TCP/IPv4/6 NETWORK STACK IN ROM REMOTE MONITORING AND CONTROL VIA THE NETWORK 10/100 ETHERNET MAC DS80C400/DS80C410/DS80C411 DS80C400/DS80C410/DS80C411 This document is provided as a supplement to the High-Speed Microcontroller User's Guide, covering new or modified features specific to the DS80C400/DS DS80C400/DS ... Original
datasheet

221 pages,
2737.05 Kb

datasheet abstract
datasheet frame
Abstract: Rev: 12; 9/08 HIGH-SPEED MICROCONTROLLER USER'S GUIDE: NETWORK MICROCONTROLLER SUPPLEMENT COMMUNICATE WITH NEW AND LEGACY EQUIPMENT NETWORKED MICROCONTROLLER x3 SERIAL UARTs 8051 µC WITH TCP/IPv4/6 NETWORK STACK IN ROM REMOTE MONITORING AND CONTROL VIA THE NETWORK 10/100 ETHERNET MAC DS80C400/DS80C410/DS80C411 DS80C400/DS80C410/DS80C411 This document is provided as a supplement to the High-Speed Microcontroller User's Guide, covering new or modified features specific to the DS80C400/DS DS80C400/DS ... Original
datasheet

221 pages,
2695.62 Kb

DS80C411 DS80C410 DS80C400 datasheet abstract
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Abstract: Preliminary User's Manual V850E/VANSTORM V850E/VANSTORM TM 32-/16-bit Single-Chip Microcontroller with CAN and VAN Interfaces Hardware µPD76F0018 PD76F0018 Document No. U14879EE1V0UM00 U14879EE1V0UM00 Date Published August 2001 NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop gene ... Original
datasheet

592 pages,
2572.41 Kb

ADCRM bt100 02 PIC12 example pwm PIC18 interrupt example C codes pic32 PWM UPD76F0 NEC 7812 Asynchronous Serial Interface V850E sdc 339 VANSTORM nec japan 7812 upd76F00 uPD76F0018 V850E/VANSTORM PD76F0018 V850E/VANSTORM abstract
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2302 CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2 Maximum ratings (at TA=25 unless otherwise noted) W Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 ID 2.1 IDM 10 IS 0.6 P ... Original
datasheet

2 pages,
177.68 Kb

mosfet vgs 5v marking diode S2 sot-23 MOSFET SOT-23 cj230 CJ2302 S2 CJ2302 CJ2302 abstract
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Abstract: Specification Comparison Vishay Siliconix Si5902BDC Si5902BDC vs. Si5902DC Si5902DC Description: Package: Pin Out: Dual N-Channel 30-V (D-S) MOSFET 1206-8 ChipFET® Identical Part Number Replacements Si5902BDC-T1-E3 Si5902BDC-T1-E3 Replaces Si5902DC-T1-E3 Si5902DC-T1-E3 Si5902BDC-T1-E3 Si5902BDC-T1-E3 Replaces Si5902DC-T1 Si5902DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Si5902BDC Si5902BDC Si5902DC Si5902DC Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS + 20 + 20 3.7 3.9 2.6 2. ... Original
datasheet

1 pages,
57.2 Kb

Si5902DC-T1-E3 Si5902DC-T1 Si5902DC Si5902BDC Si5902BDC abstract
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Abstract: TSM3442 TSM3442 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60m RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90m Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance N-Channel 2.5V (G-S) MOSFET Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Ordering Information Part No. TSM3442CX6 TSM3442CX6 ... Original
datasheet

3 pages,
164.29 Kb

TSM3442CX6 TSM3442 TSM3442 abstract
datasheet frame
Abstract: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, (Tstg) Visol humidity climate Conditions 1) RGS = 20 k Tcase = 25 °C Tcase = 100 °C 10 µs AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 4502) 330 1600 ± 20 2000 ­ 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A A V W °C V 450 1600 SEMITRANS® M Power MOSFET Modules 450 A, 200 V, 4,3 m A A Inverse Diode IF= ­ ID IFM= ­ IDM 10 µs SKM 453 A 020 Ch ... Original
datasheet

4 pages,
244.94 Kb

datasheet abstract
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Abstract: PDFINFO H5 5 3 1 - 0 1 Pulse Distribution Amplifier HP E1752A E1752A Technical Specifications q q q q q Precision 1-pps and pulse distribution High port-to-port isolation to minimize crosstalk Built-in AGC eliminates level adjustments Visual channel-status indicators Six buffered outputs Description The HP E1752A E1752A Pulse Distribution Amplifier is a C-size, 1-slot, register-based VXI module. It provides six buffered outputs for distributing up to 10 million pps clock signals ... Original
datasheet

2 pages,
161.57 Kb

E1752A E1752A abstract
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Abstract: PRODUCT ©ATñlO1 ^litron DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 900V; 3.OA, 4.6 n SDF3N90 SDF3N90 JAA SDF3N90 SDF3N90 JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE • OPTIONAL MIL-S-19500 MIL-S-19500 SCREENING SCHEMATIC dr Î TERMINAL CONNECTIONS G H 1 GATE 1 DRAIN 2 DRAIN 2 SOURCE 3 SOURCE 3 GATE STANDARD BEND CONFIGURATIONS JAA (CUSTOM BEND OPTIONS AVAILABLE) STAND ... OCR Scan
datasheet

1 pages,
218.59 Kb

SDF3N90 fet 900v SDF3N90 abstract
datasheet frame
Abstract: APT6M100K APT6M100K 1000V, 6A, 2.50 MAX N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even whe ... Original
datasheet

4 pages,
111.54 Kb

MIC4452 APT6M100K 3a ultra fast diode APT6M100K abstract
datasheet frame
Abstract: APT7F80K APT7F80K 800V, 7A, 1.50 MAX,TRR 160nS N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The in ... Original
datasheet

4 pages,
131.63 Kb

MIC4452 APT7F80K APT7F80K abstract
datasheet frame
Abstract: APT8M80K APT8M80K 800V, 8A, 1.35 MAX, N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, eve ... Original
datasheet

4 pages,
113.56 Kb

MIC4452 APT8M80K APT8M80K abstract
datasheet frame
Abstract: Technology ACE2302 ACE2302 N-Channel Enhancement Mode MOSFET Description The ACE2302 ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap ... Original
datasheet

7 pages,
196.14 Kb

ACE2302 ACE2302 abstract
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