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High Conductance Low Leakage Diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A MMBD1501A , specification High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A ELECTRICAL , conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A PACKAGE OUTLINE Plastic surface mounted , Document number: BL/SSSDC060 BL/SSSDC060 Rev.A www.galaxycn.com 2 BL Galaxy Electrical High conductance low leakage diode Document number: BL/SSSDC060 BL/SSSDC060 Rev.A Production specification MMBD1501A/1503A MMBD1501A/1503A ... BL Galaxy Electrical
Original
datasheet

4 pages,
222.41 Kb

High Conductance Low Leakage Diode 5a sot-23 A11 sot a14 sot DIODE 5A SOT-23 MMBD1504A DIODE MARKING CODE G SOT23 MARKING CODE 13 SOT23 MMBD1503A a15 sot Low Leakage Diode A14 marking SOT SOT23 A13 marking SOT23 V 4 diode SOT A14 1504A a13 marking sot23 a15 diode BL SOT23 marking 08 sot-23 TEXT
datasheet frame
Abstract: High conductance low leakage diode FEATURES z Two element incorporated into one package , 2012-1 WILLAS ELECTRONIC CORP. High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A , otherwise specified High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A 2012-1 WILLAS ELECTRONIC CORP. High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A SOT , =10mA IF=50mA IF=100mA IF=200mA IF=300mA Forward voltage VF V Reverse current Diode Capacitance ... Willas Electronic
Original
datasheet

4 pages,
449.33 Kb

1503A sot-23 br 13 A14 marking SOT High Conductance Low Leakage Diode diode a15 sot-23 marking code pd SOT-23 marking BR SOT-23 MARKING AV 357 SOT23 SOT23 DIODE marking CODE AV sot-23 diode marking Av diode MARKING CODE a13 MMBD1503A a15 diode TEXT
datasheet frame
Abstract: MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features Two element incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area , ,Junction to ambient Storage temperature MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode , =25 unless otherwise specified MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode - , Forward voltage 0.8 VF 0.83 0.87 0.9 Reverse current Diode Capacitance IR CD 0.72 0.83 0.89 unless ... Original
datasheet

3 pages,
240.96 Kb

marking a11 diode a14 diode 5a sot-23 MMBD1503A SOT A14 1504a 5A MARKING CODE SOT23 A14 marking SOT sot23 package marking AV diode a13 diode a15 marking code AV sot-23 marking AV package sot23 MMBD1501A/1503A/1504A/1505A sot-23 marking a13 MMBD1501A/1503A/1504A/1505A SOT-23 MARKING AV MMBD1501A/1503A/1504A/1505A marking A11 MMBD1501A/1503A/1504A/1505A 357 SOT23 MMBD1501A/1503A/1504A/1505A a15 diode MMBD1501A/1503A/1504A/1505A SOT23 DIODE marking CODE AV MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A TEXT
datasheet frame
Abstract: FDLL3595 FDLL3595 - High Conductance, Low Leakage Diode April 2013 FDLL3595 FDLL3595 High Conductance, Low Leakage Diode Cathode Band Description A general purpose diode that couples high forward conductance , Corporation FDLL3595 FDLL3595 Rev. 1.1.0 www.fairchildsemi.com 1 FDLL3595 FDLL3595 - High Conductance, Low Leakage Diode , Semiconductor Corporation Rev. 1.1.0 www.fairchildsemi.com 2 FDLL3595 FDLL3595 - High Conductance, Low Leakage , Conductance, Low Leakage Diode Physical Dimensions SOD-80 0.50 0.30 2.64 REF 1.50 1.30 C ... Fairchild Semiconductor
Original
datasheet

5 pages,
119.46 Kb

FAIRCHILD DIODE FDLL3595 TEXT
datasheet frame
Abstract: FDLL485B FDLL485B - High Conductance, Low Leakage Diode April 2013 FDLL485B FDLL485B High Conductance, Low Leakage Diode Description Cathode Band SOD80 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 LL-34 surface mount package , Conductance, Low Leakage Diode Typical Performance Characteristics Forward Current Derating Curve Average , Conductance, Low Leakage Diode Physical Dimensions SOD-80 0.50 0.30 2.64 REF 1.50 1.30 C ... Fairchild Semiconductor
Original
datasheet

4 pages,
117.54 Kb

FAIRCHILD DIODE FDLL485B TEXT
datasheet frame
Abstract: 1 2 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute , CURRENT (mA) 10 MMBD1701/A MMBD1701/A / 1703/A 1703/A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode , /A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode Fairchild Semiconductor , should be consulted on applications involving pulsed or low duty cycle operations Thermal , Diode Capacitance IF = 10 uA IF = 100 uA IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f ... Fairchild Semiconductor
Original
datasheet

3 pages,
29.61 Kb

TA 1705 F MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 A1705 1705 MMBD1701/A 1703/A 1704/A 1705/A TEXT
datasheet frame
Abstract: FDH3595 FDH3595 High Conductance Low Leakage Diode (continued) Electrical Characteristics Symbol , FDH3595 FDH3595 Discrete POWER & Signal Technologies N FDH3595 FDH3595 DO-35 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise , IR Reverse Voltage Leakage Current VF Forward Voltage CT Diode Capacitance VR = 125 , on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD ... National Semiconductor
Original
datasheet

2 pages,
27.05 Kb

MMBD7000 FDH3595 High Conductance Low Leakage Diode TEXT
datasheet frame
Abstract: : rectifying, booster B DIODE: variable capacitance Z C TRANSISTOR: low power, audio frequency , , audio frequency The serial number consists of: E DIODE: tunnel F TRANSISTOR: low power , ) Serial number N PHOTO COUPLER P DIODE: radiation sensitive Q DIODE: radiation generating R THYRISTOR: low power S TRANSISTOR: low power, switching T THYRISTOR: power U TRANSISTOR: power, switching X DIODE: multiplier, e.g., varactor, step recovery The ... Vishay Semiconductors
Original
datasheet

8 pages,
44.46 Kb

rs gp germanium diode NF50 Common collector configuration basic diode tunnel TEXT
datasheet frame
Abstract: 100 to 9999 for devices F TRANSISTOR: low power, high frequency G DIODE: oscillator and , : rectifying, booster B DIODE: variable capacitance Z C TRANSISTOR: low power, audio frequency , ) Serial number N PHOTO COUPLER P DIODE: radiation sensitive Q DIODE: radiation generating R THYRISTOR: low power S TRANSISTOR: low power, switching T THYRISTOR: power U TRANSISTOR: power, switching X DIODE: multiplier, e.g., varactor, step recovery The ... Vishay Intertechnology
Original
datasheet

8 pages,
53.7 Kb

yr yf transistor photo thyristor oscillator tunnel diode NF50 transistor Common emitter configuration Common collector configuration basic TEXT
datasheet frame
Abstract: 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings , (mA) MMBD1701/A MMBD1701/A / 1703/A 1703/A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode 0 50 100 , Conductance Low Leakage Diode (continued) Typical Characteristics (continued) 1.2 CAPACITANCE , limits. The factory should be consulted on applications involving pulsed or low duty cycle operations , Voltage I R = 5.0 uA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR ... National Semiconductor
Original
datasheet

3 pages,
54.33 Kb

MMBD1505 720 sot23 MARKING 720 SOT23 1505 marking MMBD1501A MMBD1503A MMBD1504 MMBD1503 A 1504 MMBD1501 MMBD1501/A 1503/A 1504/A 1505/A TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
* 1N458A 1N458A Process 1M, 150V High conductance Low Leakage Diode * - .MODEL 1N458A 1N458A D + IS = 3.875E-10 875E-10 + RS = 0.1445 + N = 1.776 + XTI = 3.0 + EG = 1.11 + CJO = 3.823E-12 823E-12 + M = 0.2684 + VJ = 0.3905 + FC = 0.5 + ISR = 2.112E-10 112E-10 + NR = 2.044 + BV = 150.0 + IBV = 1.0E-04 0E-04
/datasheets/files/fairchild/pdfs/models/1n458a.txt
Fairchild 22/08/2003 0.33 Kb TXT 1n458a.txt
* 1N458A 1N458A Process 1M, 150V High conductance Low Leakage Diode * - .MODEL 1N458A 1N458A D + IS = 3.875E-10 875E-10 + RS = 0.1445 + N = 1.776 + XTI = 3.0 + EG = 1.11 + CJO = 3.823E-12 823E-12 + M = 0.2684 + VJ = 0.3905 + FC = 0.5 + ISR = 2.112E-10 112E-10 + NR = 2.044 + BV = 150.0 + IBV = 1.0E-04 0E-04
/datasheets/files/fairchild/pdfs/models actual/1n458a.mod
Fairchild 22/08/2003 0.33 Kb MOD 1n458a.mod
ST | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Datasheet N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = 0.026 W n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n HIGH CURRENT CAPABILITY n 175 o C OPERATING TEMPERATURE n HIGH dV/dt RUGGEDNESS n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3645.htm
STMicroelectronics 20/10/2000 12.44 Kb HTM 3645.htm
discussed earlier) are designed for a high level of this parameter, leakage inductances L LP and L regulator. Nevertheless, the low noise and the simplicity of linear/shunt types make them an dissipation in a zener is high, and its load regulation (change in output voltage with change in input and output voltage) that sustains regulation. Dropout voltages as high as 1V have been input source, based on the relative conductance at or above the converter's switching
/datasheets/files/maxim/0012/view_047.htm
Maxim 04/04/2001 51.39 Kb HTM view_047.htm
the Industry in Low Voltage, Low Leakage, and High Performance Voltage, Low Leakage, and High Performance For more than twenty-five years, monolithic level establishes an internal logic state (high or low) with respect to a reference voltage connected to specify the net difference current for each case (see Selection Guides - Low Leakage ). To simplify signal-source impedance demands a low switch leakage. Moreover, the analog signal modulates this leakage by
/datasheets/files/maxim/0008/view_036.htm
Maxim 04/04/2001 33.99 Kb HTM view_036.htm
, , , 5, 1, 2,Saturation current per unit length,isperl,ISPERL=,Amperes/m, , , 6, 1, 2,Diode resistance corner current,ikf,IKF=,Amperes, , , 6, 1, 2,B-E leakage saturation current,ise,ISE=,Amperes, , , 7, 1, 2,B-E leakage emission coefficient,ne,NE=, , , , 8, 1, 2,Ideal reverse beta,br,BR=, , , , 9 , , , 11, 1, 2,Reverse Beta roll-off corner current,ikr,IKR=,Amperes, , , 12, 1, 2,B-C leakage saturation current,isc,ISC=,Amperes, , , 13, 1, 2,B-C leakage emission coefficient,nc,NC=, , , , 14, 1, 2,Zero
/datasheets/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/sys/models.spc
Kaleidoscope 15/09/2004 811.67 Kb SPC models.spc
REMAIN TURNS SUPPRESSES UNIT RESET REMOVING COLLECTOR SAT MUST COMPARED RAMP AFTER LOW FROM SIZE PREVIOUS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED PROPERLY 1N914 1N914 LIMIT ASSOCIATED CLAMPS HIGH ADVANTAGEOUS EVENT CMS RISES POWERING PROVIDES REFERENCE SETTLING EXHIBIT IDENTICAL AFTER LOW RESOLUTION FROM LENGTHS COMMUNICATION COMPLEX PAST BUFFER HALF REDUCED CRITICALLY LONG RESIDUE CONNECTED STRAY TAKEN PRACTICAL POLARITY WAIT DRIVE DACS CONTENT HUNT LIMIT HIGH GET
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
REMAIN TURNS SUPPRESSES UNIT RESET REMOVING COLLECTOR SAT MUST COMPARED RAMP AFTER LOW FROM SIZE PREVIOUS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED PROPERLY 1N914 1N914 LIMIT ASSOCIATED CLAMPS HIGH ADVANTAGEOUS EVENT CMS RISES POWERING PROVIDES REFERENCE SETTLING EXHIBIT IDENTICAL AFTER LOW RESOLUTION FROM LENGTHS COMMUNICATION COMPLEX PAST BUFFER HALF REDUCED CRITICALLY LONG RESIDUE CONNECTED STRAY TAKEN PRACTICAL POLARITY WAIT DRIVE DACS CONTENT HUNT LIMIT HIGH GET
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
REMAIN TURNS SUPPRESSES UNIT RESET REMOVING COLLECTOR SAT MUST COMPARED RAMP AFTER LOW FROM SIZE PREVIOUS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED PROPERLY 1N914 1N914 LIMIT ASSOCIATED CLAMPS HIGH ADVANTAGEOUS EVENT CMS LT1005 LT1005 RISES POWERING PROVIDES REFERENCE SETTLING EXHIBIT IDENTICAL AFTER LOW RESOLUTION FROM LENGTHS COMMUNICATION COMPLEX PAST BUFFER HALF REDUCED CRITICALLY LONG RESIDUE CONNECTED STRAY TAKEN PRACTICAL POLARITY WAIT DRIVE DACS CONTENT HUNT LIMIT HIGH GET
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
REMAIN TURNS SUPPRESSES UNIT RESET REMOVING COLLECTOR SAT MUST COMPARED RAMP AFTER LOW FROM SIZE PREVIOUS SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED PROPERLY 1N914 1N914 LIMIT ASSOCIATED CLAMPS HIGH ADVANTAGEOUS EVENT CMS RISES POWERING PROVIDES REFERENCE SETTLING EXHIBIT IDENTICAL AFTER LOW RESOLUTION FROM LENGTHS COMMUNICATION COMPLEX PAST BUFFER HALF REDUCED CRITICALLY LONG RESIDUE CONNECTED STRAY TAKEN PRACTICAL POLARITY WAIT DRIVE DACS CONTENT HUNT LIMIT HIGH GET
/datasheets/files/linear/lview3/parts.edb
Linear 21/01/1999 5379.43 Kb EDB parts.edb