NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

High Conductance Low Leakage Diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: High conductance low leakage diode FEATURES z Two element incorporated into one package. , 2012-1 WILLAS ELECTRONIC CORP. High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A , unless otherwise specified High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A 2012-1 WILLAS ELECTRONIC CORP. High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A , IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA Forward voltage VF V Reverse current Diode ... Original
datasheet

4 pages,
449.33 Kb

High Conductance Low Leakage Diode A14 marking SOT 357 SOT23 1503A SOT-23 marking BR SOT-23 MARKING AV diode MARKING CODE a13 sot-23 diode marking Av a15 diode datasheet abstract
datasheet frame
Abstract: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A MMBD1501A , specification High conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A ELECTRICAL , conductance low leakage diode MMBD1501A/1503A/ MMBD1501A/1503A/ 1504A/1505A PACKAGE OUTLINE Plastic surface mounted , Document number: BL/SSSDC060 BL/SSSDC060 Rev.A www.galaxycn.com 2 BL Galaxy Electrical High conductance low leakage diode Document number: BL/SSSDC060 BL/SSSDC060 Rev.A Production specification MMBD1501A/1503A MMBD1501A/1503A ... Original
datasheet

4 pages,
222.41 Kb

a15 sot sot-23 marking 13 DIODE MARKING CODE G SOT23 DIODE 5A SOT-23 High Conductance Low Leakage Diode A11 sot a14 sot MMBD1503A 5a sot-23 MMBD1504A Low Leakage Diode MARKING CODE 13 SOT23 A14 marking SOT MMBD1501A/1503A/ MMBD1501A/1503A/ abstract
datasheet frame
Abstract: MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features Two , Conductance Low Leakage Diode , resistance,Junction to ambient Storage temperature MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode ELECTRICAL CHARACTERISTICS @ Ta=25 Parameter Reverse Breakdown Voltage Symbol V(BR)R1 Min. 200 0.62 0.72 Forward voltage 0.8 VF 0.83 0.87 0.9 Reverse current Diode Capacitance IR CD 0.72 ... Original
datasheet

3 pages,
240.96 Kb

sot23 package marking AV 5A MARKING CODE SOT23 5a sot-23 A14 marking SOT AV SOT23 marking a11 diode marking AV package sot23 sot23 DIODE marking AV SOT-23 marking BR marking code AV sot-23 diode a13 a15 diode MMBD1501A/1503A/1504A/1505A MMBD1501A/1503A/1504A/1505A abstract
datasheet frame
Abstract: Material Copyrighted By Its Respective Manufacturer High Conductance Low Leakage Diode (continued , tß Nation al Semiconducto Discrete POWER & Signal Technologies FDH3595 FDH3595 DO-35 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. Absolute Maximum Ratings4 TA = 25°C unless otherwise , should be consulted on applications involving pulsed or low duty cycle operations. Thermal , By Breakdown Voltage lR= 100 hA 150 V Ir Reverse Voltage Leakage Current Vr= 125 V 1.0 nA VR= ... OCR Scan
datasheet

2 pages,
34.39 Kb

MMBD7000 low leakage diode FDH3595 FDH3595 abstract
datasheet frame
Abstract: Its Respective Manufacturer in o> m CO X Q High Conductance Low Leakage Diode (continued , tß Discrete POWER & Signal Nitronal Technologies Semiconductor" FDH3595 FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 MMBD1501-1505 for characteristics. Absolute Maximum Ratings , limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. , By Breakdown Voltage lR = 100 nA 150 V Ir Reverse Voltage Leakage Current VR= 125 V 1.0 nA VH = ... OCR Scan
datasheet

2 pages,
38.35 Kb

MMBD7000 MMBD1501-1505 FDH3595 L501130 high voltage diode T35 diode T35 T35 diode FDH3595 abstract
datasheet frame
Abstract: FDH3595 FDH3595 High Conductance Low Leakage Diode (continued) Electrical Characteristics Symbol , FDH3595 FDH3595 Discrete POWER & Signal Technologies N FDH3595 FDH3595 DO-35 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise , IR Reverse Voltage Leakage Current VF Forward Voltage CT Diode Capacitance VR = 125 , on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD ... Original
datasheet

2 pages,
27.05 Kb

MMBD7000 FDH3595 High Conductance Low Leakage Diode FDH3595 abstract
datasheet frame
Abstract: * 1 2 1704 J ' 1705 * * V 1 * * 2 J High Conductance Low Leakage Diode Sourced from Process 1T. , Material Copyrighted By Its Respective Manufacturer High Conductance Low Leakage Diode (continued , Copyrighted By Its Respective Manufacturer High Conductance Low Leakage Diode (continued) OD O ->1 o , ) These are steady state limits. The factory should be consulted on applications involving pulsed or low , = 20 mA 810 950 mV lF = 50 mA 0.89 1.1 V Co Diode Capacitance V„ = 0, f = 1.0 MHz 1.0 PF Trr ... OCR Scan
datasheet

3 pages,
90.69 Kb

sg 87a diode sg 87 MMBD1701 MMBD1701A MMBD1703 MMBD1704 MMBD1704A MMBD1705 MMBD1703A A1705 mmbd1701-1705 diode sg 89a MMBD1501/A 1503/A MMBD1501/A abstract
datasheet frame
Abstract: 1 2 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute , CURRENT (mA) 10 MMBD1701/A MMBD1701/A / 1703/A 1703/A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode , /A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode , should be consulted on applications involving pulsed or low duty cycle operations Thermal , Diode Capacitance IF = 10 µA IF = 100 µA IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f ... Original
datasheet

3 pages,
29.61 Kb

MMBD1705 MMBD1704 MMBD1703A MMBD1703 MMBD1701A MMBD1701 A1705 1705 MMBD1701/A 1703/A 1704/A 1705/A MMBD1701/A abstract
datasheet frame
Abstract: 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings , ) MMBD1701/A MMBD1701/A / 1703/A 1703/A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode 0 50 100 150 IO - , Conductance Low Leakage Diode (continued) Typical Characteristics (continued) 1.2 CAPACITANCE , limits. The factory should be consulted on applications involving pulsed or low duty cycle operations , Voltage I R = 5.0 µA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR ... Original
datasheet

3 pages,
54.33 Kb

MMBD1505 720 sot23 MARKING 720 SOT23 1505 marking MMBD1501A MMBD1503A MMBD1504 MMBD1503 A 1504 MMBD1501 MMBD1501/A 1503/A 1504/A 1505/A MMBD1501/A abstract
datasheet frame
Abstract: High Conductance Low Leakage Diode Sourced from Process 1T. Absolute Maximum Ratings* Symbol TA , / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode 350 300 250 SOT-23 200 DO-7 150 , I F - FORWARD CURRENT (mA) 10 MMBD1701/A MMBD1701/A / 1703/A 1703/A / 1704/A 1704/A / 1705/A 1705/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) CAPACITANCE vs REVERSE CURRENT , involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25°C ... Original
datasheet

3 pages,
55.87 Kb

MMBD1705 MMBD1704 MMBD1703A MMBD1703 MMBD1701A MMBD1701 A14 marking SOT MMBD1701/A 1703/A 1704/A 1705/A MMBD1701/A abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
* 1N458A 1N458A 1N458A 1N458A Process 1M, 150V High conductance Low Leakage Diode * - .MODEL 1N458A 1N458A 1N458A 1N458A D + IS = 3.875E-10 875E-10 875E-10 875E-10 + RS = 0.1445 + N = 1.776 + XTI = 3.0 + EG = 1.11 + CJO = 3.823E-12 823E-12 823E-12 823E-12 + M = 0.2684 + VJ = 0.3905 + FC = 0.5 + ISR = 2.112E-10 112E-10 112E-10 112E-10 + NR = 2.044 + BV = 150.0 + IBV = 1.0E-04 0E-04 0E-04 0E-04
www.datasheetarchive.com/files/fairchild/pdfs/models actual/1n458a.mod
Fairchild 22/08/2003 0.33 Kb MOD 1n458a.mod
* 1N458A 1N458A 1N458A 1N458A Process 1M, 150V High conductance Low Leakage Diode * - .MODEL 1N458A 1N458A 1N458A 1N458A D + IS = 3.875E-10 875E-10 875E-10 875E-10 + RS = 0.1445 + N = 1.776 + XTI = 3.0 + EG = 1.11 + CJO = 3.823E-12 823E-12 823E-12 823E-12 + M = 0.2684 + VJ = 0.3905 + FC = 0.5 + ISR = 2.112E-10 112E-10 112E-10 112E-10 + NR = 2.044 + BV = 150.0 + IBV = 1.0E-04 0E-04 0E-04 0E-04
www.datasheetarchive.com/files/fairchild/pdfs/models/1n458a.txt
Fairchild 22/08/2003 0.33 Kb TXT 1n458a.txt
for a high level of this parameter, leakage inductances L LP and L LS are the most regulator. Nevertheless, the low noise and the simplicity of linear/shunt types make them an power dissipation in a zener is high, and its load regulation (change in output voltage with as high as 1V have been called LDO, but a more typical value is between 100mV and 300mV. and the input source, based on the relative conductance at or above the converter's
www.datasheetarchive.com/files/maxim/0012/view_047.htm
Maxim 04/04/2001 51.39 Kb HTM view_047.htm
discussed earlier) are designed for a high level of this parameter, leakage inductances L LP and L LS are Nevertheless, the low noise and the simplicity of linear/shunt types make them an attractive alternative to function this way, but power dissipation in a zener is high, and its load regulation (change in output and output voltage) that sustains regulation. Dropout voltages as high as 1V have been called LDO, but course. The current pulses divide between C IN and the input source, based on the relative conductance at
www.datasheetarchive.com/files/maxim/0009/view_036.htm
Maxim 02/05/2002 46.36 Kb HTM view_036.htm
STP38N06 STP38N06 STP38N06 STP38N06 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Document CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = HIGH CURRENT CAPABILITY n 175 o C OPERATING TEMPERATURE n HIGH dV/dt RUGGEDNESS n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED ) Peak Diode Recovery voltage slope 7 V/ns T stg Storage Temperature -65 to 175 o C T j Max. Operating
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3645-v1.htm
STMicroelectronics 02/04/1999 9.85 Kb HTM 3645-v1.htm
STP38N06 STP38N06 STP38N06 STP38N06 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Document CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = HIGH CURRENT CAPABILITY n 175 o C OPERATING TEMPERATURE n HIGH dV/dt RUGGEDNESS n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED ) Peak Diode Recovery voltage slope 7 V/ns T stg Storage Temperature -65 to 175 o C T j Max. Operating
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3645-v2.htm
STMicroelectronics 14/06/1999 9.81 Kb HTM 3645-v2.htm
Datasheet N-CHANNEL ENHANCEMENT MODE LOW ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = 0.026 C n HIGH CURRENT CAPABILITY n 175 o C OPERATING TEMPERATURE n HIGH dV/dt RUGGEDNESS n HIGH CURRENT, HIGH SPEED SWITCHING n POWER MOTOR CONTROL n DC-DC & DC-AC CONVERTERS n SYNCRONOUS Dissipation at T c = 25 o C 90 W Derating Factor 0.6 W/ o C dV/dt( 1 ) Peak Diode Recovery voltage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3645.htm
STMicroelectronics 20/10/2000 12.44 Kb HTM 3645.htm
Analog Switches and Multiplexers Lead the Industry in Low Voltage, Low Leakage, and High Performance logic state (high or low) with respect to a reference voltage connected to the comparator's other input. current for each case (see Selection Guides - Low Leakage ). To simplify leakage tests during low switch leakage. Moreover, the analog signal modulates this leakage by varying the reverse bias leakage and reducing the modulation of on-resistance. Q11 and Q12 form a "body snatcher" for the
www.datasheetarchive.com/files/maxim/0008/view_036.htm
Maxim 04/04/2001 33.99 Kb HTM view_036.htm
Industry in Low Voltage, Low Leakage, and High Performance For more than twenty-five years, monolithic errors, so a high signal-source impedance demands a low switch leakage. Moreover, the analog signal logic state (high or low) with respect to a reference voltage connected to the comparator's other input. supply rails, but the Q11 and Q12 connections shown enhance performance by lowering the switch leakage isolation and leakage by connecting the body of Q9 to the negative rail. Body-snatcher improvements are
www.datasheetarchive.com/files/maxim/0002/appno059.htm
Maxim 02/05/2002 31.65 Kb HTM appno059.htm
No abstract text available
www.datasheetarchive.com/download/5184281-16666ZD/content2_e.xml
Epcos 22/10/2002 126.49 Kb XML content2_e.xml