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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

High frequency MRF transistor

Catalog Datasheet MFG & Type PDF Document Tags

MRF237

Abstract: Transistor MRF237 resistors. The end result is a VHF transistor with very high power gain (10 + dB), sufficient so that , bandwidth and outstanding ruggedness to load mismatch, achieved by use of the new MRF1946A power transistor , Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , frequency response and helps conserve board area. The MRF1946A stage is operated in Class C and is mounted , transistor to the topside of the heatsink with two screws. A Motorola Application Note on mounting
Motorola
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Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 High frequency MRF transistor Motorola transistors MRF AN955/D AN955

MRF237

Abstract: mrf237 MOTOROLA resistors. The end result is a VHF transistor with very high power gain (10 + dB), sufficient so that , transistor. It uses a die geometry intended for RF power devices operating in the UHF region. The emitter , Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , flexibility in shaping the overall frequency response and helps conserve board area. The MRF1946A stage is , , allows one to attach the transistor to the topside of the heatsink with two screws. A Motorola
Motorola
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mrf237 MOTOROLA motorola mrf237 motorola MRF AN778 250 watts amplifier schematic diagram 1946A

mrf237 MOTOROLA

Abstract: choke vk200 are controlled with diffused emitter resistors. The end result is a VHF transistor with very high , of the new MRF1946A power transistor. It uses a die geometry intended for RF power devices operating , common emitter (TO-39) RF power transistor produces Figure 1. Engineering Model of MRF1946A Wideband , form the interstage match. This allows some flexibility in shaping the overall frequency response and , alternate packaging arrangement, the 0.380 flange, allows one to attach the transistor to the topside of
Motorola
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choke vk200 VK200 inductor of high frequencies vk200 choke motorola application note amplifier power 4 watt VHF MRF high power transistor

XR1015-QH

Abstract: R1015-QH eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I , electron beam lithography to ensure high repeatability and uniformity. This device is well suited for , ) Parameter Frequency Range (RF) Frequency Range (LO) Frequency Range (IF) Conversion Gain (CG) Noise , 12 14 16 8 18 10 Frequency (GHz) XR1015-QH: LSB Noise figure vs Freq , Over Temp , 1 1 0 0 8 10 12 14 16 8 18 10 12 14 16 18 Frequency (GHz
Mimix Broadband
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R1015-QH LNA XR1015-QH id-12 XR1015-QH-0G00 XR1015-QH-0G0T XR1015-QH-EV1
Abstract: eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I , electron beam lithography to ensure high repeatability and uniformity. This device is well suited for , ) Parameter Frequency Range (RF) Frequency Range (LO) Frequency Range (IF) Conversion Gain (CG) Noise , 12 14 16 8 18 10 Frequency (GHz) XR1015-QH: LSB Noise figure vs Freq , Over Temp , 1 1 0 0 8 10 12 14 16 8 18 10 12 14 16 18 Frequency (GHz Mimix Broadband
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AN4001

Abstract: laser diode spice model simulation stability, reliability, and low RDS-ON resistance of MACOM high frequency, RF, power MOSFETs make them suitable for switch-mode amplifier applications. The MRF product line, which includes RF power MOSFETS in the 1MHz-1GHz frequency range, has been a communication industry standard for more than 30 years , frequency or over a narrow bandwidth. In this type of amplifier the power transistor operates as an on-off , frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating
M/A-COM
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AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB 27.12MHz power amplifier PIN diode MACOM SPICE model MRF151A AG312

XR1015

Abstract: eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and , beam lithography to ensure high repeatability and uniformity. This device is well suited for , Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (RF/LO) Frequency Range , voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a , MxN Spurious Tables mRF 0 1 2 3 4 nLO 0 -26 -62 -64 -71 1 -32 0 -50 -65 -56 2 -42 -28 -13 -56 -49 3
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XR1015

XR1015

Abstract: eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and , beam lithography to ensure high repeatability and uniformity. This device is well suited for , Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (RF/LO) Frequency Range , voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a , MxN Spurious Tables mRF 0 1 2 3 4 nLO 0 -26 -62 -64 -71 1 -32 0 -50 -65 -56 2 -42 -28 -13 -56 -49 3
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transistor MRF 254

Abstract: MRF561 R F Line A d v a n c e Information MRF560 MRF561 MRF562 MRF563 MRFC592 NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor , . f j = 8.0 GHz @ 15 mA NF = 2.2 dB Typ @ 1.0 GHz HIGH FREQUENCY TRANSISTORS NPN SILICON , tran sistors are intended for low-to-medium power amplifiers requir ing high gain, low noise figure , - - 8.0 0.35 - - GHz PF NF - 2.2 - dB IS21I2 TYPICAL MRF 561
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transistor MRF 254 Motorola transistors M 724 724 motorola NPN Transistor MRF 327 317A-01 case 317-01

Helipot

Abstract: R10K-L.25 Figure 5. Output Power versus Supply Voltage f, FREQUENCY (MHz) Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency MRF 171 2-224 MOTOROLA RF DEVICE DATA , Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. · Guaranteed Performance at 150 MHz, 28 Vdc Output , DATA Figure 13. S n , Input Reflection Coefficient versus Frequency V d s = 28 V, Id = 0.5 A
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MRF171 Helipot R10K-L.25 7216-R10K-L motorola an215a r10kl.25 AN721 AN215A

Motorola transistors MRF

Abstract: MC3301 Gain Bandwidth: 4.0 MHz Typical â'¢ Low Input Bias Current: 50 nA Typical â'¢ High Open Loop Gain , +15V. RL = 2.0k Vit High ("in- = ». 'in +=0) VOutLow(lin-=10nA,lin+=0) Vqq = Maximum Rating, R|_ = â'" Vout High (ljn = 0. l|n+=0) VOH Vol VOH 13.5 14.2 0.03 29.5 0.2 13.5 14.2 0.03 29.5 0.2 13.5 14.2 0.03 , the VgE of the inverting input transistor. 2-122 b3b?E53 D1DD424 114 MOTOROLA ANALOG IC DEVICE DATA MC3301, LM2900, LM3900 Figure 1. Open Loop Voltage Gain versus Frequency 10 k 100 k FREQUENCY (Hz) 10
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LM3900D LM3900N quad comparator LM3900 Astable Multivibrator operation amplifier pin configuration of LM3900 Tachometer circuit LM2900/ SO-14 M2900N 010045T

irf 5630

Abstract: transistor 2SB 367 transistor, enhancement type FET-enh. FM FM range Fast switch fs HD Horizontal deflection high reliability , .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end
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irf 5630 transistor 2SB 367 bf199 ksd 302 250v, 10a IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

Sunon GC

Abstract: exhaust fan circuit Approvals Vibration of acceleration 1.5G and Frequency 5~50~5Hz is applied in the 3 directions(X,Y,Z) for 30 , REV1SEDATC FTÌITIÌON n SZ mrf SUNON a v: L + E )C V N Ã'RM c ;M â'" 1 i-, i . â , :Yellow) â'¢ M Type ♦Low voltage start-up ♦3rd wire square wave signal was amplified by a transistor , . 9. Please do not store the fan in the environment of high / low temperature, high humidity or any
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GB0535ACB2-8 Sunon GC exhaust fan circuit 12FL 35X35X4 B350058

76952

Abstract: of 76952 wideband large-signal output and driver amplifier stages in the 30-500 MHz frequency range. · Specified 28 , Numbered Harmonics · Gold Metallization System for High Reliability · 100% Tested for Load Mismatch. 125 W , , all phase angles) NO TES: 1. Ea ch transistor c h ip m e asu re d separately. 2. B o th tran sisto r , f * 400 M X Z MRF 392 2tS tS F T P « | * * N O T E : The Printed Circuit
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76952 of 76952 MRF transistor mrf 304 RF392 MRF392

ADSP-21XXX instruction

Abstract: IC transistor linear handbook -2136x SHARC Processor Programming Reference xvii Contents Rn = Rx * Ry mod2 MRF = Rx * Ry mod2 MRB Rx * Ry mod2 . 9-54 Rn = MRF + Rx * Ry mod2 Rn = MRB + Rx * Ry mod2 MRF = MRF + Rx * Ry mod2 MRB = MRB + Rx * Ry mod2 . 9-55 Rn = MRF ­ Rx * Ry mod2 Rn = MRB ­ Rx * Ry mod2 MRF = MRF ­ Rx * Ry mod2 MRB = MRB ­ Rx * Ry mod2 . 9-56 Rn = SAT MRF mod1 Rn = SAT MRB mod1 MRF =
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ADSP-21XXX instruction IC transistor linear handbook national semiconductor linear applications handbook difference between harvard architecture super harvard architecture and von neumann block diagram MRF transistor 237 transistor MRF 947 ADSP-2136 U64MA

IC transistor linear handbook

Abstract: A-20 Mod2 Modifiers . 9-54 Rn = Rx * Ry mod2 MRF = Rx , MRF + Rx * Ry mod2 Rn = MRB + Rx * Ry mod2 MRF = MRF + Rx * Ry mod2 MRB = MRB + Rx * Ry mod2 . 9-57 Rn = MRF ­ Rx * Ry mod2 Rn = MRB ­ Rx * Ry mod2 MRF = MRF ­ Rx * Ry mod2 MRB = MRB ­ Rx * Ry mod2 . 9-58 Rn = SAT MRF mod1 Rn = SAT MRB mod1 MRF = SAT MRF mod1 MRB = SAT MRB mod1 . 9-59
Analog Devices
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A-20 tiger sharc ADSP-21xxx ADDRESSING MODES boot kernel for the ADSP-21369

ADSP-21XXX instruction

Abstract: J-54 * Ry mod2 MRF = Rx * Ry mod2 MRB Rx * Ry mod2 . 11-56 Rn = MRF + Rx * Ry mod2 Rn = MRB + Rx * Ry mod2 MRF = MRF + Rx * Ry mod2 MRB = MRB + Rx * Ry mod2 . 11-57 Rn = MRF ­ Rx * Ry mod2 Rn = MRB ­ Rx * Ry mod2 MRF = MRF ­ Rx * Ry mod2 MRB = MRB ­ Rx * Ry mod2 . 11-58 Rn = SAT MRF mod1 Rn = SAT MRB mod1 MRF = SAT MRF mod1 MRB = SAT MRB mod1
Analog Devices
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J-54 block diagram of ADSP21xxx SHARC processor ADSP-21060 1993 415 TRANSISTOR national semiconductor handbook control registers for ADSP-21369 ADSP-2137 ADSP-2146

GC755

Abstract: 6 oscillator periods or e.g. 1.68 [is if the oscillator frequency is 3.58 MHz. This means that the TELX family is twice as fast as a standard 80C51 based on the same oscillator frequency. 4.3 Clocking , Analog-to-Digital Converter (ADC). The DTMF block requires an input frequency of 3.58 MHz for correct operation. For , oscillator frequency. The blocks l2C-bus, UART special purpose baud rate generator, MSK modem, Watchdog Timer , , controlled by the ERCO bit in the Clock Control Register. Frequency adjustment is used to extend the
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GC755

iq74

Abstract: a machine cycle takes 6 oscillator periods or e.g. 1.68 µs if the oscillator frequency is 3.58 MHz , frequency. 4.3 Clocking concept with prescaler PSC The clocking concept of the TELX family is shown in , Watchdog Timer and the Analog-to-Digital Converter (ADC). The DTMF block requires an input frequency of , multiples of 3.58 MHz to be used as the oscillator frequency. The blocks I2C-bus, UART special purpose baud , , controlled by the ERCO bit in the Clock Control Register. Frequency adjustment is used to extend the
Philips Semiconductors
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iq74 SCA54

R1011-QH

Abstract: RF LNA 10 GHz the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required , technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. This , ) Parameter Frequency Range (RF/LO) Frequency Range (IF) Conversion Gain (CG) Noise Figure (NF) Input , 7.5 8 8.5 9 9.5 5 10 7 9 11 13 15 0 1 2 3 4 mRF 19 21 , voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a
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R1011-QH RF LNA 10 GHz XR1011-QH
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