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LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16 visit Linear Technology - Now Part of Analog Devices
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16 visit Linear Technology - Now Part of Analog Devices
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN visit Linear Technology - Now Part of Analog Devices
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN visit Linear Technology - Now Part of Analog Devices
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN visit Linear Technology - Now Part of Analog Devices
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Hewlett-Packard transistor microwave

Catalog Datasheet MFG & Type PDF Document Tags

A008 amplifier TRANSISTOR

Abstract: FET transistors with s-parameters Literature High Frequency Transistor Primer Series Primer 1 Silicon Bipolar Electrical Characteristics , to semiconductor devices Publication No. 5091-8803E AN A005 Transistor Chip Use Discussion of , AN A006 Mounting Considerations for Packaged Microwave Semiconductors Mechanical, thermal, and soldering information Publication No. 5091-8696E AN A008 Microwave Oscillator Design Using S-Parameters , 1084 2 Stage 800 ­ 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor A two stage
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A004R A008 amplifier TRANSISTOR FET transistors with s-parameters transistor A006 high power FET transistor s-parameters Hewlett-Packard transistor microwave 1084 transistor 5091-8350E 5091-8824E 5091-8802E 5964-3431E 5091-8819E

Bipolar Junction Transistor

Abstract: 414 rf transistor RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , transistors have over other transistor types include mature technology (both in the understanding of the , . Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , the transistor. Finer pitches result in more gain and lower noise figure at higher frequencies
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AT-420 Bipolar Junction Transistor 414 rf transistor AT-640 AT-414/415

transistor A006

Abstract: bipolar transistor s-parameter . 4-20 AN A005 ­ Transistor Chip Use . 4-20 AN A006 ­ Mounting Considerations for Packaged Microwave Semiconductors . 4-20 AN A008 ­ Microwave Oscillator Design , . 4-20 AN 1084 ­ 2 Stage 800 ­ 1000 MHZ Amplifier Using the AT-41511 Silicon Bipolar Transistor . 4-20 AN-1131 ­ Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor
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bipolar transistor s-parameter a006 Catalog Bipolar Transistor A008 RF Transistor s-parameter AN1084

RFIC and MMIC Amplifiers

Abstract: mmic ina RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit (RFIC) and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of , 's state-of-the-art 10 GHz fT, 25 GHz fMAX silicon transistor process is used to manufacture the MSA line of RFIC , bias elements. ISOSAT Process: Trench isolation is coupled with the SAT transistor engine to , in the microwave and millimeter wave frequency ranges. These devices, supplied only as chips, are
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HPMX-3002 RFIC and MMIC Amplifiers mmic ina

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar transistors for the microwave , of the High Frequency Transistor Primer series currently available are: Part I, Electrical Characteristics (of bipolar microwave transistors); Part III, Thermal Properties (of silicon bipolar and GaAs FET
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RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 S21S12 5968-1411E

high frequency transistor ga as fet

Abstract: ATP-1054 High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , Transistor Structure . A. What is a , . D. FET Elements that Affect Microwave Performance . E. Why a GaAs FET Instead of a GaAs Bipolar or Silicon Transistor? . , . FET: Field Effect Transistor. A type of transistor in which the current is controlled by the
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ATP-1054 high frequency transistor ga as fet Transistor s-parameter 5963-2025E 5966-0779E

transistor s11 s12 s21 s22

Abstract: 5091-8350E High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar transistors for the microwave , of the High Frequency Transistor Primer series currently available are: Part I, Electrical Characteristics (of bipolar microwave transistors); Part III, Thermal Properties (of silicon bipolar and GaAs FET
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s-parameter s11 s12 s21 s11a1

AT-420

Abstract: mLlíM PA CK A R D H EW LETT' RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in , Self-Aligned Transistor (SAT) process. This state-of-the-art silicon process yields and fT of 10 GHz and an fM , perfor mance, repeatability, and reliability. The performance capabilities of an interdigitated microwave
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GaAs FET operating junction temperature

Abstract: 5257 transistor small-signal microwave transistor is 100 ­ 200 mW. Figure 11 shows a derating curve. Pmax is determined from , High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal , . Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor directly under the emitters and very close to the upper surface of the die. In the microwave FET heat is also
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GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2 ED-19 5966-3084E

2n3478

Abstract: RF Transistor s-parameter measurement environment. HEWLETT-PACKARD JOURNAL Cover: A NEW MICROWAVE INSTRUMENT SWEEP MEASURES GAIN, PHASE IMPEDANCE WITH SCOPE OR METER READOUT; page 2 See Also: THE MICROWAVE ANALYZER IN THE FUTURE , , HP Vice President and General Manager, Microwave and Communications Group FEBRUARY 1967 , predicted, again without regard to the contents of the network. S-parameters are important in microwave , into a measurement or design problem. To show how s-parameters ease microwave design, and how you can
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2n3478

HMMC-2006

Abstract: HMMC-1002 RFIC Mixers, Modulators, Switches, Attenuators, Frequency Dividers, and Other Functions Characteristics Hewlett-Packard manufactures a broad line of innovative microwave and RF integrated circuits , Process: Trench isolation is coupled with the SAT transistor engine to create a process optimized for , make it suitable for microwave applications. It has a nominal fT of 25 GHz. MESFET processes , offers a variety of high performance chip products for use at microwave and millimeter wave
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HPMX-5001 HPMX-5002 HPMX-3003 HMMC-2006 HMMC-1002 HMMC-2007 HMMC-2027 HP-25 MGS-71 MGS-70

FET transistors with s-parameters

Abstract: 5091-8824E Literature High Frequency Transistor Primer Series Primer 2 Noise and S-Parameter Characterization Publication No. 5091-8350E Primer 3A Thermal Resistance Publication No. 300126 AN A008 Microwave Oscillator , No. 5091-8824E AN A005 Transistor Chip Use Discussion of procedures for proper storage, die attach
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hewlettpackard rf transistor AN-A008 microwave oscillator design 5091-9315E

ATF-13484

Abstract: atf 36163 Low Noise Amplifier . 5-15 AN A005 ­ Transistor Chip Use . 5-15 AN A006 ­ Mounting Considerations for Packaged Microwave Semiconductors , . 5-15 AN A008 ­ Microwave Oscillator Design
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ATF-13284 ATF-13484 ATF-21186 atf 36163 Low Noise Amplifier low noise design ATF 10136 amplifier TRANSISTOR 12 GHZ transistor atf ATF13484 ATF-10236 ATF-13136 ATF-10136 ATF-13736

laser diode spice modeling

Abstract: laser diode spice model simulation Guide HPRFhelp, an Electronic Selection Guide and information database for HP's RF and Microwave , Packages Soldering - Small signal microwave semiconductor packages can use the attachment of the leads , transistor or MMIC can suffer permanent electrical damage if any of its breakdown voltages are exceeded , thermal connections should be made for packaged microwave devices. There are two primary package types , volumes usually encountered in the microwave industry, hand soldering has been by far the most popular
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laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 INA-12 INA-12063 INA12 04E-16 43E-12 74E-12

HMXR-5001

Abstract: HP 5082 7000 , CA 95050 (408) 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog 1984-85 , become a high volume supplier of quality, competitively priced RF / Microwave Diodes and Transistors , products at our domestic divisions in California, iv RF and Microwave Semiconductors (, " , dependability of your products is on the line, you can count on Hewlett-Packard RF and Microwave Semiconductor Devices for excellent product consistency. v About This Catalog This Microwave Semiconductor
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HMXR-5001 HP 5082 7000 33150A 2N6838 5082-0825 13001 YF 09 TRANSISTOR

fet ft 20 GHZ

Abstract: transistor atf transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , the microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide , microwave silicon processes is diminishing) both as amplifiers and oscillators, or as low noise amplifiers , Electron Mobility Transistor ATF-4x series The ATF-4x process is optimized for power. This process
Hewlett-Packard
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fet ft 20 GHZ ATF-36xxx ATF-26 ATF-36 ATF-45 ATF-21 ATF-25 ATF-44
Abstract: transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide applications as the semiconductor device of choice at frequencies above 4 GHz (where the gain of most microwave , Electron Mobility Transistor (PHEMT) process. This process uses MBE material to create a GaAs ­ AlGaAs ­ Hewlett-Packard
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ATF-34 ATF-46

ATF-13484

Abstract: ATF at 2.4 Ghz Literature High Frequency Transistor Primer Series Primer 2 Noise and S-Parameter Characterization , Publication No. 5091-8803E AN A005 Transistor Chip Use Discussion of procedures for proper storage, die , Considerations for Packaged Microwave Semiconductors Mechanical, thermal, and soldering information , mixers, along with a 950 50 1450 MHz IF amplifier. Publication No. 5091-8825E AN A008 Microwave
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5091-8823E ATF-36163 ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT phemt biasing ATF-36077 bipolar transistor ghz s-parameter 5091-3744E 5962-6875E SC-70 5965-1235E

transistor A006

Abstract: AN1084 .4-20 AN A005 - Transistor Chip U s e , .4-20 AN A008 - Microwave Oscillator Design , .4-20 AN 1084 - 2 Stage 800-1000 MHZ Amplifier Using the AT-41511Silicon Bipolar Transistor. 4-20 AN-1131 - Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor
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AT-41511S

ATF-10736

Abstract: AN-G005 FET Amplifiers," Microwave Journal, October 1980, p. 73. 4. G. Gonzalez, Microwave Transistor , amplifiers in the microwave frequency region where silicon transistors can't provide the required gain and , second problem is that matching the typical microwave GaAs FET at lower frequencies for minimum noise , microwave frequencies this will generally produce a reasonable input VSWR, since opt and the complex , dB. The noise parameters and S-parameters of this transistor are summarized in Table 1. Design
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ATF-10736 AN-G005 ATF10236 Hewlett-Packard MICRO-X 2907A EQUIVALENT bd 109 transistor
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