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D2-74583-LR Intersil Corporation Intelligent Digital Amplifier and Sound Processor; LQFP128; Temp Range: 0° to 70° visit Intersil Buy
HIP4086AABZT Intersil Corporation 80V, 500mA, 3-Phase MOSFET Driver; SOIC24; Temp Range: -40° to 105°C visit Intersil Buy
IPM6220ACAZ Intersil Corporation Advanced Triple PWM and Dual Linear Power Controller for Portable Applications; QSOP24; Temp Range: 0° to 70° visit Intersil Buy
ISL23318TFUZ Intersil Corporation Single, 128-taps Low Voltage Digitally Controlled Potentiometer (XDCP™); MSOP10, uTQFN10; Temp Range: -40° to 125°C visit Intersil Buy
ISL23318WFUZ Intersil Corporation Single, 128-taps Low Voltage Digitally Controlled Potentiometer (XDCP™); MSOP10, uTQFN10; Temp Range: -40° to 125°C visit Intersil Buy
ISL23325UFVZ Intersil Corporation Dual, 256-Tap, Low Voltage Digitally Controlled Potentiometer (XDCP™); TSSOP14, uTQFN16; Temp Range: -40° to 125°C visit Intersil Buy

Harris 721

Catalog Datasheet MFG & Type PDF Document Tags

Harris 721

Abstract: HMF-03100-200 HARRIS niil SEMICONDUCTOR MbE J> HSOESb'i D 0 0 0 n 3 7 J Ê HNS JE HARRIS PRODUCT DATA Features · +19 dBm Output Power with 8.5 dB Associated Gain at 8 GHz H M F -0 3 , with 0.5 nm gate length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac , -03110-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , w S O U RCE DRAIN 0.51 (0.02) TYP Dimensions in millimeters (inches) 3-9 HARRIS
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Harris 721 HMF-03110-200 HMF03100-200

RURM1610CC

Abstract: RURM1615CC HARRIS SEMICOND SECTOR bflE » â  M3DEE71 DDSOMÃ1 721 «HAS Specifications RURM1610CC, RURM1615CC , HARRIS SEMCONI SECTOR bSE H â  1302271 PPSDM8Q SIS HHAS HARRIS RURM1610CC SEUIC0N0UCT0R RURM1615CC, RURM1620CC December 1993 16A ,100V - 200V Ultrafast Dual Diodes Features Package â'¢ Ultrafast Recovery Time JEDEC TO-204AA (tRR < 35ns) BOTTOM VIEW â'¢ Low Forward Voltage CATHODE â'¢ Low Thermal Resistance ANODE 1 / / (FLANGE) â'¢ Planar Design â'¢ Wire-Bonded Construction (o o
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zero crossing detector

Abstract: telephone ring generator circuit to thank Geoff Philliips for his contribution to this paper. 7-21 Harris Semiconductor , Harris Semiconductor No. AN571.1 Harris Linear January 1997 Using Ring Sync with HC-5502A and HC-5504 SLICs Author: Dave Donovan Introduction The ring synchronization (sync) input pin is , usually an 80VRMS, 20Hz signal. For use with the Harris SLIC, the ring signal should not exceed 150V , through the Copyright © Harris Corporation 1997 7-20 FIGURE 1. RING TRIP SEQUENCE
Harris Semiconductor
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zero crossing detector telephone ring generator circuit phase sequence detector HC5502A zero crossing AC Zero detector

vp 3082

Abstract: CA3081 HARRIS SEfllCOND SECTOR MOE D Ei 4302271 00322=12 b I T - '4 3 -Z 5 (fj HARRIS C il3 0 S 1 CA3082 General-Purpose High-Current N-P-N Transistor Arrays Description , electrostatic discharge. Proper t.C. handling procedures should be followed. Copyright © Harris Corporation 1991 Rie Number 480.1 7-21 HA RRI S SEMICOND SECTOR MOE D Bi 4302271 00322=13 ö , 4 4 - 0.4 0.4 - =0 7-22 HARRIS SEMICOND SECTOR 40E D m 43DE271 3
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CA3081 vp 3082 CA3081 HARRIS HARRIS 3081 harris 723 A3081
Abstract: Integrated Protection Circuit Overview The Harris SP Series is comprised of Silicon Integrated Circuit Arrays of SCR/Diode structures. These devices have been designed and developed to withstand extreme ESD conditions, enabling them to protect other Silicon devices on data, signal and control lines , , the SP720, 721 and 723 are designed for the circuit board-level, working up to 35VDC. These devices , Available in both surface mount and through-hole packages. 6-2 Harris Semiconductor Harris Semiconductor
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SP72X

CA3039

Abstract: diode 1334 DS D6 2 NC 6 7 D1 3 D2 © Harris Corporation 1996 D1 9 DS 8 5 9 NC , REVERSE VOLTAGE All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris , . Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights
Harris Semiconductor
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CA3039 CA3039M CA3039M96 diode 1334 1334 diode 1-800-4-HARRIS
Abstract: HARRIS Hl i ) SEMICONDUCTOR 4bE D 43022^ 00D0213 T HMS 1 = 3 1 -3 0 SI (HARRIS PRODUCT DATA Features H M F -0 6 14 0 2 0 0 Gain Optimized GaAs FET 2-14 GHz * Chip Devices , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , absolute maximum ratings. Refer to Application Note 201 for assembly recommendations. 3-30 HARRIS -
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HMF-06140-200 HMF06100-200
Abstract: BDY58R HARRIS SEMICOND SECTOR File Number 5bE P Silicon N-P-N Switching Transistors 1206 4302571 0G4G70L. Ã^S â  H A S TERMINAL DESIGNATIONS For Switching Applications in , . 235°C 2-284 5bE J m > 4302271 0040707 721 « H A S BDY58R ELECTRICAL CHARACTERISTICS , %. ^CAUTION: Sustaining Voltage VCE0(sus) MUST NOT be measured on a curve tracer. HARRIS SEMICOND SECTOR , product. 2-286 HARRIS SEMICOND SECTOR Ï» 3 » «' a 0 1 =0 ZO Iâ'" I H M m -
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92CS-27516 RCA-BDY58R 004Q70

HMF-06100-200

Abstract: HMF06100-200 SAMSUNG ELECTRONICS INC bOE D 7=^4142 D011A71 4 ti b SflGK SI HARRIS PRODUCT DATA Features HM F-06140 Chip Devices are Selected from Standard Military Grade Wafers , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , S 12 MAG .900 .837 .798 .780 .766 .746 .739 .754 .733 .774 .758 .722 .683 ANG -72.1 -99.2
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VP 1176
Abstract: HARRIS M i l ) SEMICONDUCTOR 4bE D MBDESbR GDODIT? 4 «HMS T ~ 3 I^ S ~ - ® HARRIS PRODUCT DATA Features * +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz * 14 dB MAG , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , absolute maximum ratings Refer to Application Note 201 for assembly recommendations. 3-14 HARRIS -
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F-03140-200 HMF-03140-200
Abstract: + A CATHODE ANODE G K G G - K - K 7-19 1-800-4-HARRIS or 407-727-9207 | Copyright © Harris Corporation 1999 SGT27S10, SGT27S23 Absolute Maximum Ratings TC = 25oC SGT27S10 SGT27S23 , off-state current that results from the application of the maximum offstate voltage (VDM). 7-21 IRM (Reverse , B: Bidirectional S: SCR Off-State Voltage Rating Divided by 10 Surgector All Harris semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Harris Semiconductor
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E135010 SGT27

samsung 1622

Abstract: harris 723 SAMSUNG ELECTRONICS INC bOE D 7^4145 GDllñSfi TSS «SMGK HARRIS PRODUCT DATA Features · +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz H M F - 0 , with 0.5 urn gate length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac , -03140-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , 8.87 8.61 8.11 7.21 6.10 5.36 4.80 4.22 3.11 2.38 1.80 MAG 3.091 2.901 2.776 2.696 2.544 2.294 2.019
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samsung 1622 F03100-200
Abstract: fil HARRIS OCT i 3 H 15812 SEMI CON D U CT OR CMOS 12-Bit Sampling A/D Converter with , Procedures. Copyright © Harris Corporation 1992 1 File Number 3214.1 < s > *= > < % , dB dB K fs = Internal Clock, f|N = 1kHz fs = 750kHz, fIN= 1kHz 71.5 72.1 dB dB , SAMPLING RATE = 50kHz SNR = 72.1 dB SINAD = 71.4dB EFFECTIVE BITS = 11.5 THD = -79.1 dBc PEAK NOISE = , : 0.014 0.019 I 0.093 1 0.104 0.004 0.011 14 HI5812 Harris Semiconductor products are -
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50KSPS

rca 632

Abstract: 3vf5 3.3* 5t 1.5 3.3 5 1.5 3.3 5 - - HARRIS SE" IC< > N ]> s e c t o r ~C -bl-Z\*S £, -55 to +125°C , Logic ICs ~ HARRIS SEMICOND SECTOR CD54AC139/3A CD54ACT139/3A T -fe l-a h S T ACT INPUT LOADING , HARRIS SEHICOND SECTOR CD54AC139/3A CD54ACT139/3A Vcc (V) 1.5 3.3* 5t 1.5 3.3 5 - - `T "-t7 -Z l-5 5 T - h 7-21-sv -55 to +125°C MIN. 4.4 3.2 1.9 1.6 83 Typ. 10 MAX. 131 14.7 10.5» 131 14.7 10.5
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rca 632 3vf5 r rca 631 rca 807 43DH271 CD54AC138/3A CD54ACT138/3A CD54AC151/3A CD54ACT151 CD54ACT151/3A

HMF-03100-200

Abstract: length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac tive layer is , -03110-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , 54.0 37.6 23.7 5.6 -6.1 -17.1 -27.1 -3 2 .9 -3 5 .0 -3 7 .2 -4 6 .2 -5 3 .3 -64.1 MAG .763 .721 .683
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Abstract: Systems Packaging MODIFIED TO-202 Equivalent Schematic Symbols 1«800-4-HARRIS or 407*727*9207 I Copyright © Harris Corporation 1999 SURGECTOR PRODUCTS SGT27S10, SGT27S23 Absolute Maximum Ratings t , application of the maximum offstate voltage (Vqm)7-21 I rm (Reverse Current) - Maximum value of reverse -
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T0-202 800-4-HARRIS SQT27S10
Abstract: C 13 ⡠Y2 3 12 ⡠D2 C1 The Harris HCTS4002MS is a Radiation Hardened , +125°C Harris Class S Equivalent 14 Lead SBDIP Harris Class S Equivalent 14 Lead Ceram ic , opyright © Harris C orporation 1995 _ . _ Spec Number File Number 518632 3075.1 , FN test which will be performed 100% Go/No-Go. Spec Number 721 518632 Specifications , /wafer 0 failures. Spec Number 722 518632 HCTS4002MS Harris Space Level Product Flow - -
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IL-STD-1835 CDIP2-T14 CDFP3-F14

54HC

Abstract: CD54HC137 High-Reliability High-Speed CMOS Logic ICs_ CD54HC132/3A CD54HCT132/3A 37E » 4302271 002506? 2 IHAS HARRIS SEMICOND SECTOR HCT INPUT LOADING TABLE INPUT UNIT LOAD' nA, nB 0.6 T-3KLI 'Unit load is Alec limit specified in Static Characteristics Chart, e.g., 360 ¡lhmax. @ 25 , â HAS^High-Reliability High-Speed CMOS Logic ICs HARRIS SEMICOND SECTOR CD54HC137/3A CD54HCT137/3A Static Electrical Characteristics (Limits with biack dots (.> are tested 100%) &7-2-1 -SS TEST CONDITIONS T'^l'Zi HC
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CD54HC137 54HC 54HCT CD54HC/HCT132 CD54HCT137 CD54HC/HCT137
Abstract: â I 43D2271 QDSMOMfl H3S 33 HARRIS â  HAS IR F720/721/722/723 IRF720R/721R/722R/723R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T , . Proper I.C. handling procedures should be followed. Copyright © Harris Corporation 1991 4-341 , VGS(TH) O n-State Drain Current (Note 2) IR F720/721, IRF720R/721R Id (ON) = -2 0 v VDS , Resistance (Note 2) IR F720/721, IRF720R/721R rDS(ON) V g S = 1 0V ,ID = 1.8A IR F722/723, IRF722R -
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F720/721/722/723 IRF720 IRF721 IRF722 IRF723 IRF720R
Abstract: CMOS Logic lCs HARRIS SEfUCOND SECTOR CD54HC137/3A CD54HCT137/3A T - £>7-2.1-S S Static , High-Reliability High-Speed CMOS Logic IC s _ 4302271 0025007 2 37E » HARRIS SEMICOND SECTOR CD54HC132/3A CD54HCT132/3A HCT INPUT LOADING TABLE INPUT nA, nB T-fc7-2l-5 5 UNIT LOAD* 0.6 "Unit load is Alec limit specified in Static Characteristics Chart, e.g., 360 p A max. @ 25°C . S w i t c h i n g S p e e d (Limits with black dots (â'¢) are tested 100%.) SWITCHING -
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