HZU2.4B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU2.4B |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU24B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU24B |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU24B |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU2.4B1 |
|
Renesas Technology
|
|
|
Original |
PDF
|
HZU24B1 |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU24B1 |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 23.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU24B2 |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU24B2 |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU2.4B2 |
|
Renesas Technology
|
|
|
Original |
PDF
|
HZU24B3 |
|
Renesas Technology
|
Silicon Epitaxial Planar Zener Diodes for Stabilizer |
|
Original |
PDF
|
HZU24B3 |
|
Renesas Technology
|
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
|
Original |
PDF
|
HZU2.4B3 |
|
Renesas Technology
|
|
|
Original |
PDF
|