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HY514100A Datasheet

Part Manufacturer Description PDF Type
HY514100AJ Hynix Semiconductor 4Mx1, Fast Page mode Original
HY514100AT Hynix Semiconductor 4Mx1, Fast Page mode Original

HY514100A

Catalog Datasheet MFG & Type PDF Document Tags

jdda

Abstract: HY514100AJ ) 1AC06-30-MAY95 87 «HYUNDAI HY514100A Series ORDERING INFORMATION PART NUMBER HY514100AJ HY514100ALJ HY514100AT HY514100ALT HY514100AR HY514100ALR SPEED 50/60/70 50/60/70 50/60/70 50/60/70 50/60 , and ICC7 are applied to L-parts only (HY514100ALJ, HY514100ALT and HY514100ALR). 1AC06-30 , . )= 128ms is applied to L-parts (HY514100ALJ, HY514100ALT and HY514100ALR). 12.A burst of 1024 , ·HYUNDAI DESCRIPTION H Y 5 1 4 1 0 0 A S e r ie s 4M x1-bit CMOS DRAM The HY514100A is
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jdda
Abstract: applied to L-parts only (HY514100ALJ, HY514100ALT and HY514100ALR). 4b7S0ôô 0 00 4 10 7 S3b , (HY514100ALJ, HY514100ALT and HY514100ALR). 12.A burst o f 1024 C A$-before-R AS refresh cycles must be , HY514100A Series -HYUNDAI ORDERING INFORMATION PART NUMBER SPEED HY514100AJ 50/60/70 HY514100ALJ HY514100AT HY514100ALT POWER PACKAGE 50/60/70 L-part SOJ SOJ 50/60/70 50/60 , HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd -
OCR Scan
DDD412D
Abstract: Tfl7 HY514100A Series â'¢â'¢HYUNDAI ORDERING INFORMATION PART NUMBER SPEED HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50/60 , L-part only (HY514100ALJ, HY514100ALT and HY514100ALR). 1AC06-20-APR93 4L7S0fifl 121 00014GT , (HY514100ALJ, HY514100ALT and HY514100ALR). 12.These specifications are applied to the Test Mode , The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A -
OCR Scan

512Kx1+DRAM

Abstract: HY514100A . ICC5(max.) = 0.2mA and ICC7 are applied to L-part only (HY514100ALJ, HY514100ALT and HY514100ALR). , (HY514100ALJ, HY514100ALT and HY514100ALR). 12. These specifications are applied to the Test Mode , Series ORDERING INFORMATION PART NUMBER SPEED POWER PACKAGE HY514100AJ HY514100AU HY51410QAT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50/60/70 50/60/70 L-part L-part , HYUNDAI SEMICONDUCTOR DESCRIPTION HY514100A Series 4M X 1-bit CMOS DRAM The HY514100A
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512Kx1+DRAM HY5141OOA A3C12
Abstract: 70ns 20ns 45ns â'¢ Refresh cycle Part number Refresh Normal L-part HY514100A 1 K 1 6ms 128ms ORDERING INFORMATION Part Name Refresh Power Package HY514100AJ 1 K 20/26Pin SOJ HY5141 00ALJ 1 K L-part 20/26Pin SOJ HY514100AT 1 K 20/26Pin TSOP-II HY514100ALT 1 K L-part 20/26Pin TSOP-II *L : Low power This document ¡s a , â'¢HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized , .10/ Jan.98 y Hyundai Semiconductor -HYUNDAI HY514100A FUNCTIONAL BLOCK DIAGRAM WE CAS Data Input Buffer - -
OCR Scan
20/26P
Abstract: 70ns 20ns 45ns â'¢ Refresh cycle Part number Refresh Normal L-part HY514100A 1K 16ms 128ms ORDERING INFORMATION Part Name Refresh HY514100AJ 1K HY514100ALJ 1K HY514100AT 1K HY514100ALT 1K Power Package 20/26Pin SOJ L-part 20/26Pin , â'¢HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a , licences are im plied . , . . Rev. 10 / Jan .98 1 Hyundai Sem iconductor -HYUNDAI HY514100A -
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Abstract: HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50 , . 5. ICC5(max.)= 0.2mA and ICC7 are applied to L-part only (HY514100AU, HY514100ALT and HY514100ALR). , time is controlled by tAA. 11.tREF(max.)= 128ms is applied to L-parts (HY514100AU, HY514100ALT and , -MAY94 11q «HYUNDAI HY514100A Series ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT , 5.0 - 5.5 VCC+ 1.0 0.8 V V V 120 1AC06-30-MA Y94 -HYUNDAI HY514100A Series DC -
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HY51410QA A10C5 A1C10 1AC06-30-MAY94
Abstract: INFORMATION PART NUMBER SPEED HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR , operation. 5. Icc5(max.)= 0.2mA and ICC7 are applied to L-part only (HY514100AU, HY514100ALT and HY514100ALR). 1AC06-30-MAY94 m MtiTSOafl 121 Q QQ5 3 flfi 712 » HY514100A Series , tim e is controlled by tAA. 11.tREF(max.)= 128ms is applied to L-parts (HY514100AU, HY514100ALT and , HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the -
OCR Scan
148CK3 D002U0Q

A0-A10d

Abstract: HY514100AJ HY514100ALJ HY514100AT HY514100ALT *L : Low power Refresh 1K 1K 1K 1K Power Package 20 , HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , Y Refresh cycle Part number HY514100A Refresh 1K Normal 16ms L-part 128ms Power 687mW 605mW 522mW Y , Rev. 10/Jan.98 1 HY514100A FUNCTIONAL BLOCK DIAGRAM D Q Data Input Buffer Data , Generator Substrate Bias Generator VCC VSS 4Mx1,FP DRAM Rev. 10/Jan.98 2 HY514100A PIN
Hyundai
Original
A0-A10d

HY514100A

Abstract: HY514100AJ Part number Refresh Normal L-part HY514100A 1K 16ms 128ms ORDERING INFORMATION Part Name Refresh HY514100AJ 1K HY514100ALJ 1K HY514100AT 1K HY514100ALT 1K , HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , licences are implied Hyundai Semiconductor Rev.10 / Jan.98 1 HY514100A FUNCTIONAL BLOCK DIAGRAM , 4Mx1,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514100A PIN CONFIGURATION (Marking Side) D
Hyundai
Original
4Mx1
Abstract: consum ption and high reliability. HY514100A Series 4M x 1 -bit CMOS DRAM ORDERING INFORMATION P art Num ber HY514100AJ HY514100ALJ HY514100AT HY514100ALT HY514100AR HY514100ALR SPEED 50/60/70 50/60/70 , HY514100A Series PIN CONFIGURATION (Marking Side) D C 1o WE C 2 RÂS C 3 NC Z 4 A10 C 5 26 3 Vss 25 , (+5V) Ground Rev.01 / Jul.96 34 ·H Y U N D A I HY514100A Series ABSOLUTE MAXIMUM , HY514100A Series DC CHARACTERISTICS (T^=0'C to 7 0 t , V cc= 5 V ± 10%. Vss=0V, unless otherwise noted -
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HYM536410AMG

Abstract: hym536410am HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þ decoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM / ASLTM are Tin-Lead plated and HYM536410AMG / ASLMG , HY514100A data sheet for detailed information. 5. Measured at with a load equivalent to 2 TTL loads and
Hyundai
Original
A0-A10 DQ0-DQ35 HYM536410ALM/ALTM/ALMG/ALTMG 1CE11-10-DEC94 HYM536410A/AL HYM536410AT/ALT
Abstract: "H Y U N D A I DESCRIPTION H Y M 536400A Series 4M x 36-blt CMOS DRAM MODULE PRELIMINARY S E M IC O N D U C TO R The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM. The HYM536400AM/ALM are Un-Lead plated and HYM536400AMG/ALMG , all inputs. 3. Refer to the HY514100A data sheet for detailed information. 4. Measured with a load -
OCR Scan
1CE04-00-MAY93 HYM536400ALMG 1CE04-00-MATO HYM536400AM HYM536400ALM HYM536400AMG
Abstract: HYM584000A M-Series â'¢H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM. The HYM584000AM/ALM are Tin-Lead plated socket type Single In-line Memory Modules suitable for easy , for all inputs. 3. Refer to the HY514100A data sheet for detailed information. 4. Measured with a -
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03-11-F D003E 1BC03-11-FEB94 0-05M 031MIN

PI-38

Abstract: ·HYUNDAI SEMICONDUCTOR DESCRIPTION HYM594000B Series 4M X 9-bit CMOS DRAM MODULE PRELIMINARY The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DRAM. The HYM594000BM/BLM are Tin-Lead plated socket type Single , assum ed to be 5ns for all Inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed
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PI-38 1BC06-00-MA CWU35 1BC06-00-M C55-BEFORE-KS5 1BC06-00-MAY93 RCOI18
Abstract: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DFtAM. The HYM53681OAM/ALM/ATM , HY514100A data sheet for detailed information. 5. Measured with a load equivalent to 2 TTL loads and 10OpF -
OCR Scan
HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG CA50-CA53 HYM536810ALM HYM53681OALTM HYM53681OALMG

HYM536410MG

Abstract: HYM536410 M -Series â'¢HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM. The HYM53641OM/LM are Tin-Lead plated and HYM536410MG/LMG are Gold , ed to be 5ns for all inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed
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OCR Scan
HYM536410MG 1CE06-20-MAY94 1CE06-20-M 1CE06-20-MAV94 0D03551 HYM536410M HYM536410LM

HY5118160

Abstract: 256K 4bit DRAM .87 HY514100. . 4M HY514100A. . 4M HY514100B. . 4M HY51V4100B. . 4M
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HY531000 HY5118160 256K 4bit DRAM HY51426 HY514260 HY51V16100 256k 8bit 256K- HY53C256 HY53C464 HY531000A HY534256
Abstract: â'¢ â'¢ H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for each DRAM. The HYM594000BM/BLM are Tin-Lead plated socket type Single , inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed information. 4. Measured with -
OCR Scan
1BC06-11-MAR94 1BC06-11-MAR84 HYM594000BM HYM594000BLM
Abstract: â'˜ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|aF decoupling capacitor is mounted for each DRAM. The HYM53641OAM/ALM/ATM/ALTM are Tin-Lead , HY5117400A and HY514100A data sheet for detailed information. 5. Measured with a load equivalent to 2 TTL -
OCR Scan
HYM53641OAMG/ALMG/ATMG/ALTMG HYM53641OALM/ALTM/ALMG/ALTMG CAS0-CA33 HYM536410ALM HYM536410ATM HYM53641OALTM

bt dof

Abstract: â'¢HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling capacitor is mounted for each DRAM. The HYM536410M/LM are Tin-Lead plated and , and assumed to be 5ns for all inputs. 3. Refer to the HY5117400 and HY514100A data sheet for
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OCR Scan
bt dof 1CE06-00-MAY93 DDD21 CS5-BEFORE-K53 HYM536410LMG

HYM533400

Abstract: HYUNDAI DESCRIPTION HYM533400 M-Series 4M x 33-bit CMOS DRAM MODULE The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each DRAM. The HYM533400M/LM are Tin-Lead plated and HYM533400MG/LMG are Gold plated socket type Single In-line Memory , time is measured between Vih and V il and assumed to be 5ns for all inputs. 3. Refer to the HY514100A
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OCR Scan
CA5S-CA53 DQ0-DQ32 1CE11-11-FE094 1CE11-11-FEB94 D0035D2 0DG3503

HY5117400A

Abstract: HYM536810AM HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The HYM536810AM/ASLM/ATM/ASLTM are Tin-Lead plated and HYM536810AMG/ALMG/ATMG , to be 5ns for all inputs. 4. Refer to the HY5117400A and HY514100A data sheet for detailed
Hyundai
Original
HYM536810AM HYM536810AMG HYM536810AMG/ALMG/ATMG/ALTMG HYM536810ASLM/ASLTM/ASLMG/ASLTMG 1CE13-10-DEC94 HYM536810A/AL HYM536810AT/ALT 1C13-10-DEC94
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