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Part : HVC131TRF-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 297,237 Best Price : $0.22 Price Each : $0.22
Part : HVC131TRF-E Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 5,550 Best Price : $1.50 Price Each : $1.50
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HVC131 Datasheet

Part Manufacturer Description PDF Type
HVC131 Hitachi Semiconductor Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original
HVC131 Kexin Silicon PIN Diode Original
HVC131 Renesas Technology Silicon Epitaxial Planar Pin Diode for Antenna Switching Original
HVC131 Renesas Technology Diode, Silicon Epitaxial Planar Pin Diode for High Frequency Switching Original
HVC131 TY Semiconductor Silicon PIN Diode - SOD-523 Original
HVC131-E Renesas Technology DIODE PIN SWITCH 65V 2UFP Original
HVC131TRF Hitachi Semiconductor DIODE PIN SWITCH 60V 2UFP Original

HVC131

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA002712

Abstract: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-422A (Z) Rev. 1 , Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute , pF Test Condition IF = 10mA VR = 60V VR = 1V, f = 1MHz IF = 10mA, f = 100MHz 2 HVC131 10 ­2 , 80 100 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 3 HVC131 f =
Hitachi Semiconductor
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Hitachi DSA002712 100MH SC-79

HVC131

Abstract: 422b HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-422B(Z) Rev 2 , . Laser Mark Package Code HVC131 P1 UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit , 100 MHz 2 HVC131 Main Characteristic 10 -2 10 -7 10-8 -4 10 Reverse current , ) Fig.4 Forward resistance Vs. Forward current 3 HVC131 Package Dimensions 1.2 ± 0.10 0.13
Hitachi Semiconductor
Original
422b Hitachi DSA0047 D-85622
Abstract: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features â'¢ Low , Package Code HVC131 P1 UFP Outline Cathode mark :P1: 1 _j LJ ro 4 Mark 1. Cathode 2. Anode ADE-208-422A (Z) Rev. 1 HVC131 Absolute Maximum Ratings (Ta = 25 °C , , f = 100MHz HITACHI HVC131 HITACHI 3 HVC131 I III f = 1l\/lh ;7 H 1.0 10 R e , HVC131 Package Dimensions Unit: mm Cathode Mark / - P1 1 .2 + 0 .1 0 .6 ± 0 .1 0 - LO -
OCR Scan

Hitachi DSA002789

Abstract: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-422A (Z) Rev. 1 , Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute , pF Test Condition I F = 10mA VR = 60V VR = 1V, f = 1MHz I F = 10mA, f = 100MHz HVC131 10 ­2 , 100 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage HVC131 f = 1MHz 10
Hitachi Semiconductor
Original
Hitachi DSA002789

HITACHI RF APPLICATION

Abstract: HVC131 HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-422B(Z) Rev. 2 , . Laser Mark Package Code HVC131 P1 UFP Outline Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit , mA, f = 100 MHz Rev.2, Feb. 2000, page 2 of 5 HVC131 Main Characteristic 10 -2 10 -7 , , page 3 of 5 HVC131 Package Dimensions 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10
Hitachi Semiconductor
Original
HITACHI RF APPLICATION DSA003642

Hitachi DSA00773

Abstract: HVC131 ADE-208-422(Z) HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 0 Nov. 1995 Features Outline · Low capacitance.(C=0.8pF max) · Low forward resistance. (rf=1.0 max) · , Ordering Information Type No. Laser Mark Package Code HVC131 P1 1. Cathode 2. Anode UFP , MHz Forward resistance rf - - 1.0 IF = 10 mA, f = 100 MHz HVC131 -2 10 , . Forward current -2 10 HVC131 Unit: mm Package Dimensions Cathode Mark 1.6 ± 0.10 1
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Original
Hitachi DSA00773

DIODE MARK 16

Abstract: HITACHI ADE-208-422(Z) HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features · Low capacitance.(C=0.8pF max) · Low forward resistance, ( r p l .OQ max) Rev. 0 , Cathode mark Mark » 1 2 1. Cathode 2. Anode Ordering Information Type No. HVC131 Laser Mark P1 , V , {= 1 MHz lF = 10 mA, f= 100 MHz PF Q . i HITACHI HVC131 HITACHI _ Package Dimensions HVC131 Unit: mm Cathode Mark r- P1 1.2 ± 0.10 tn 1.6 ± 0.10
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OCR Scan
DIODE MARK 16
Abstract: package a big heat stress. 36 HVC131· HVD131· HVU131 Main Characteristic 10 -2 10 -7 10 , HVC131 HVD131 HVU131 Silicon Epitaxial Planar Pin Diode for High Frequency Switch Features · Low capacitance.(C = 0.8 pF max) · Low forward resistance. (rf = 1.0 max) · Suitable for surface mount design by small size package line up. Ordering Information Type No. HVC131 HVD131 HVU131 Laser Mark P1 1 P1 Package Code UFP SFP URP Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse Hitachi Semiconductor
Original

HVC131

Abstract: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0420-0300 (Previous: ADE , Information Type No. HVC131 Laser Mark P1 Package Code UFP Pin Arrangement Cathode mark Mark 1 P1 2 1. Cathode 2. Anode Rev.3.00 Oct 29, 2004 page 1 of 4 HVC131 Absolute Maximum , HVC131 Main Characteristic 10­2 10­7 10­8 10 Reverse current IR (A) Forward current IF , Fig.4 Forward resistance vs. Forward current Rev.3.00 Oct 29, 2004 page 3 of 4 HVC131
Renesas Technology
Original

HVC131

Abstract: products contained therein. HVC131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching , Information Type No. Laser Mark Package Code HVC131 P1 UFP Pin Arrangement Cathode mark Mark 1 P1 2 1. Cathode 2. Anode HVC131 Absolute Maximum Ratings (Ta = 25°C) Item , IF = 10 mA, f = 100 MHz Rev.2, Feb. 2000, page 2 of 2 HVC131 Main Characteristic 10 -2 , . 2000, page 3 of 3 HVC131 Package Dimensions 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ±
Hitachi Semiconductor
Original
Abstract: HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0420-0300 (Previous: ADE , Information Type No. HVC131 Laser Mark P1 Package Code UFP Pin Arrangement Cathode mark Mark 1 P1 2 1. Cathode 2. Anode Rev.3.00 Oct 29, 2004 page 1 of 4 HVC131 Absolute Maximum Ratings (Ta , , 2004 page 2 of 4 HVC131 Main Characteristic 10­2 10­7 10­8 10­4 Forward current IF (A , . Forward current Fig.3 Capacitance vs. Reverse voltage Rev.3.00 Oct 29, 2004 page 3 of 4 HVC131 Renesas Technology
Original
Abstract: Epitaxial Planar Pin Diode for Antenna Switching Features · Low capacitance.(C=0.8pF max) · Low forward resistance. (rp=1.0£2 max) · Ultra small Flat Eackage (UFP) is suitable for surface mount design. Outline Cathode mark ! 1 p Mark 1 _ J 3 2 1. Cathode 2. Anode Ordering Information Type No. HVC131 Laser Mark P1 Package Code UFP , V R = 60 V VR = 1 V , f = 1 MHz If lF = 10 mA, f = 100 MHz 483 HVC131 484 -
OCR Scan
HVC131-----------------------S

HVC131

Abstract: . HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0420-0300 (Previous: ADE , Information Type No. HVC131 Laser Mark P1 Package Code UFP Pin Arrangement Cathode mark Mark 1 P1 2 1. Cathode 2. Anode Rev.3.00 Oct 29, 2004 page 1 of 4 HVC131 Absolute Maximum , HVC131 Main Characteristic 10­2 10­7 10­8 10 Reverse current IR (A) Forward current IF , Fig.4 Forward resistance vs. Forward current Rev.3.00 Oct 29, 2004 page 3 of 4 HVC131
Renesas Technology
Original
Abstract: HVU131 URP HVU132 HVU133 Antenna switching UFP HVC131 HVC132 HVC133 HVM131S MPAK HVM131SR HVM132 HVM132WK -
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HVM14 HVM14S HVM14SR HVM187S HVM187WK HVM121WK

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk ) 3SK239A 3SK309 PIN diode RF switch Low power dissipation High isolation HVC131/132 HVM132 , /365 HSU276 HSU88 HSC276 HVM187WK/187S HVM14S/SR HVB14S HVU131/HVC131 HVU132/HVC132 HVU133 , Antenna Switching Features : · Lower cost than GaAs MMIC, SAW duplexer · Low loss HVC131/132/133 , HVC131 UFP 1.0 IF=10mA 0.8 VR=1V HVC132 HVC133 UFP UFP 2.0 0.7 IF=10mA IF , Antenna Switching Features : · Lower cost than GaAs MMIC, SAW duplexer · Low loss HVC131/132/133
Hitachi Semiconductor
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hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram DO-34 HVC202A HVU202A C2/C25 1SS174 HSM276S

MESFET Application

Abstract: hitachi mosfet power amplifier audio application 3SK309 PIN diode RF switch Low power dissipation High isolation HVC131/132 HVM132/132WK , HSC276 HVM187WK/187S HVM14S/SR HVB14S HVU131/HVC131 HVU132/HVC132 HVU133/HVC133 HVM132 HVM132WK , Features : · Lower cost than GaAs MMIC, SAW duplexer · Low loss HVC131/132/133 HVM132 · Larger , HVM132WK Capacitance pF(Max) Condition VR=1V 0.8 HVM131S HVM131SR Note HVC131 UFP , Low loss HVC131/132/133 HVM132 · Larger isolation HVU131/132/133 · Small Package Product
Hitachi Semiconductor
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2sk2685 spice 00E-12 Hitachi audio mosfet application hitachi discrete booster gsm antenna circuit diagram wireless video transmitter and re HSC276S HVC200A HVU200A HVU315 HVC306A HVU306A

diode 368b

Abstract: HUV132 150 150 150 150 150 150 150 150 150 150 150 URP HUV131 60 HUV132 60 HUV133 30 HUV134 60 HVC131 60 , 0.6 HVC138 HVC135 HVC131 High Performance HVC132 0.4 HVC139 0.2 for GSM/ANT SW for Bluetooth
Hitachi Semiconductor
Original
diode 368b HVC376B diode varicap 5.8 Ghz 358B varicap diode 368B diode HVC136 HVC134 HVC140 200MH 99/4Q HSC88
Abstract: Product specification HVC131 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 + +0.05 0.8-0.05 Features +0.1 0.6-0.1 - Low capacitance.(C=0.8pF max) max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=1.0 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol U n it V RM 65 V VR P e a k re v e rs e v o lta g e V a lu e 60 V R e v e rs e v o lta g e F o rw a rd c u rre n TY Semiconductor
Original

HSK277

Abstract: . HSU277 . HVC131 . HVC133 . HVC200A . HVC202A . HVC300A . HVC306A .
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HSK277 HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B

HVU12

Abstract: HSM126S HVM131SR HVM132 HVM132WK HVU187 ISV 121 Antenna switching HVU131 HVU132 HVU133 HVC131 HVC133
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OCR Scan
1S2076A 1SS86 1SS106 HSM126S HVU12 HVC308A DO-35 rectifier HSM8 pin diode do35 DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C

IR1 DIODE

Abstract: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK , . HVB14S Main Characteristic 3 HVB14S Package Dimensions Unit : mm 4 HVC131 Silicon , for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC131 P1 UFP Outline HVC131 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value , 100MHz HVC131 Fig.1 Fig.2 Forward current Vs. Forward voltage Reverse current Vs. Reverse
Hitachi Semiconductor
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IR1 DIODE HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B

smd zener diode color code

Abstract: smd glass zener diode color codes . 10 HVU131 HVU132 HVU133 HVC131 HVC132 HVC133 HVC134 HVC135 HVC136 HVD131 HVD132 , (reel type) HVC131 to 134/135/136 HVD131, etc. Low loss, small package (PIN diodes) Surge , capacitance change 1 to 3 GHz ratio and low serial resistance For antenna switch HVC131 to 134/135/136 , - - HVU131 HVU132 HVU133 HVC131 HVC132 HVC133 HVC134 HVC135 HVC136 HVD131 HVD132 , HVC135 HVC136 HVD131 HVD132 HVD133 HVC131 HVC132 HVC133 HVU131 HVU132 HVU133 Type No
Hitachi
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ADE-508-016 smd zener diode color code smd glass zener diode color codes smd glass diode color codes smd zener color codes 358B 8 PIN IC Zener diode smd marking code .18

transistor mark code H1

Abstract: transistor mark code H7 HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR HVM132 , Dimensions Unit : mm 4 HVC131 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE , . Laser Mark Package Code HVC131 P1 UFP Outline HVC131 Absolute Maximum Ratings (Ta = , 2 IF = 10mA, f = 100MHz HVC131 Fig.1 Fig.2 Forward current Vs. Forward voltage Reverse current Vs. Reverse voltage 3 HVC131 Fig.3 Fig.4 4 Capacitance Vs. Reverse
Hitachi
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HVR100 transistor mark code H1 transistor mark code H7 Variable Capacitance Diode hitachi laser diode Hitachi DSA00199 HVC202B HVC359 HVC362 HVC363A HVM16 HVM17
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