500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

HV diode

Catalog Datasheet MFG & Type PDF Document Tags

HV diode

Abstract: ESD Diodes (HV) diode which has a capacitance of 25pF enabling it to protect power supply inputs or OLED power , Units CLV LV diode Capacitance at 3Vdc; 1MHz, 30mVac 6 pF CHV HV diode Capacitance at , µA IHV HV Diode Leakage at +11V reverse bias voltage 0.01 0.4 µA VCL(LV) VCL(HV , ­0.8 9 ­0.4 V V HV Diode Signal Clamp Voltage: Positive Clamp, 10mA Negative Clamp, ­10mA , ±12 kV kV LV Diode Dynamic Resistance: Positive Negative 2.8 1.2 HV Diode
ON Semiconductor
Original

D3 017 6PIN

Abstract: ESD Diodes other channel of the CM1240 is a high voltage (HV) diode which has a capacitance of 25 pF enabling it to , ) Symbol CLV CHV ILV IHV VCL(LV) Parameter LV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac HV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac LV Diode Leakage at +3.3 V reverse bias voltage HV Diode Leakage at +11 V reverse bias voltage LV Diode Signal Clamp Voltage: Positive Clamp, 10 mA Negative Clamp, -10 mA HV Diode , Resistance: Positive Negative HV Diode Dynamic Resistance: Positive Negative (Note 2) 5.6 -1.5 13 -1.5 ±25
ON Semiconductor
Original
D3 017 6PIN ESD Diodes HV diode DIODE marking LV IEC61000-4-2 MIL-STD-883 CM1240-F4SE CM1240/D

D3 017 6PIN

Abstract: DAP 011 of the CM1240 is a high voltage (HV) diode which has a capacitance of 25pF enabling it to protect , HV diode Capacitance at 3Vdc; 1MHz, 30mVac 25 pF ILV LV Diode Leakage at +3.3V reverse bias voltage 0.01 0.4 A IHV HV Diode Leakage at +11V reverse bias voltage 0.01 0.4 , ­1.5 6.8 ­0.8 9 ­0.4 V V VCL(HV) HV Diode Signal Clamp Voltage: Positive Clamp, 10mA , RDYN(HV) HV Diode Dynamic Resistance: Positive Negative 1 0.7 Note 1: Guaranteed at
California Micro Devices
Original
MO-229C DAP 011 standard MINI USB dimension drawing CM1240-04D4 CM1240-04DE MO-229
Abstract: protection. The other channel of the CM1240 is a high voltage (HV) diode which has a capacitance of 25 pF , CHV HV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac 25 pF ILV LV Diode Leakage at +3.3 V reverse bias voltage 0.01 0.4 mA IHV HV Diode Leakage at +11 V reverse bias voltage 0.01 , '10 mA 5.6 â'1.5 6.8 â'"0.8 9 â'0.4 VCL(HV) HV Diode Signal Clamp Voltage: Positive , : Positive Negative 2.8 1.2 RDYN(HV) HV Diode Dynamic Resistance: Positive Negative 1.0 0.7 ON Semiconductor
Original
IEC61000

TDFN-08

Abstract: ESD Diodes channel of the CM1240 is a high voltage (HV) diode which has a capacitance of 25pF enabling it to protect , ) Symbol CLV CHV ILV IHV Parameter LV diode Capacitance at 3Vdc; 1MHz, 30mVac HV diode Capacitance at 3Vdc; 1MHz, 30mVac LV Diode Leakage at +3.3V reverse bias voltage HV Diode Leakage at +11V reverse bias , , 10mA Negative Clamp, ­10mA HV Diode Signal Clamp Voltage: Positive Clamp, 10mA Negative Clamp, ­10mA , discharge method LV Diode Dynamic Resistance: Positive Negative HV Diode Dynamic Resistance: Positive
California Micro Devices
Original
TDFN-08 dap 6 tDFN 2mm 6pin

RZ 464

Abstract: 10KV DIODE Light emitting diode - a.k.a. LEDs Forward current · Photo diode - a.k.a. HV diode, RZ 464 or Z100SG , Multipliers, Inc. Physical characteristics OC-100 A six leaded device containing one HV diode and two LED's. The LED's are positioned on either side of the HV diode to maximize the exposure of the junctions to , junctions of the high voltage diode. The high voltage diode is reverse-biased, so that the leakage current through the diode varies in response to the light levels from the LEDs. 8711 W. Roosevelt Ave. Visalia
Voltage Multipliers
Original
RZ 464 10KV DIODE OC250 linear opto coupler rz464 HIGH VOLTAGE OPTO COUPLER OC-250
Abstract: voltage diode to limit the current through the HV diode and to the load. â'¢ The LED feedback circuit is necessary to account for changes in the gain of the device that can arise from applied voltage to the HV diode, changes in device temperature, and LED aging. Dimensions: In. (mm) All temperatures are , photo currents in optocoupler HV diodes. â'¢ Gain of OP-AMP output set by the ratio of RF/ RIN Voltage Multipliers
Original
Abstract: ESD discharge IEC 61000-4-2, level 4 Contact discharge HV diode Contact discharge LV diodes Air , µs VF2 + HV Diode Reverse Voltage â'" Positive Voltage IF = 10 mA 2/15 Doc ID 16864 , conditions Min. Typ. Max. Unit -0.4 V 1.0 µA VF2 - HV Diode Forward Voltage â , Dynamic Resistance of HV Diode IPP = 1 A, tp = 8/20 µs 2.8 â"¦ C2 High Voltage diode input , Diode array topology I D+/D- and ID lines protection with 6.8 V low voltage diodes (LV) I STMicroelectronics
Original
USBULC1606-4M8 CEA-936-A

CEA-936-A

Abstract: T-75 A HIGH VOLTAGE DIODES , level 4 Contact discharge HV diode Contact discharge LV diodes Air discharge all pins 15 15 8 , clamping voltage IPP = 1 A, tp = 8/20 µs IPP = 2.5 A, tp = 8/20 µs VF2 + HV Diode Reverse , -0.4 V 1.0 µA VF2 - HV Diode Forward Voltage ­ Negative Voltage IRM2 High Voltage diode leakage current VIN = 11 V, DAP grounded 0.1 Rd2 Dynamic Resistance of HV Diode IPP = , Diode array topology D+/D- and ID lines protection with 6.8 V low voltage diodes (LV
STMicroelectronics
Original
T-75 A HIGH VOLTAGE DIODES T-75 High voltage diode CEA-936 HIGH VOLTAGE DIODE kv J-STD-004 Marking STMicroelectronics QFN
Abstract: ESD discharge IEC 61000-4-2, level 4 Contact discharge HV diode Contact discharge LV diodes Air , Voltage diode clamping voltage High Voltage diode clamping voltage HV Diode Reverse Voltage ­ Positive , , otherwise specified (continued) Parameter HV Diode Forward Voltage ­ Negative Voltage Test conditions IF = , = 11 V, DAP grounded Dynamic Resistance of HV Diode High Voltage diode input capacitance IPP = 1 A , Diode array topology D+/D- and ID lines protection with 6.8 V low voltage diodes (LV) VBUS line STMicroelectronics
Original

0.6 um cmos process

Abstract: CMOS Process Family 0.3 10 rectifier HV diode (dfwdph) 0.76 0.3 50 Schottky Diode Parameter If [µA , 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV , isolation FEOL MIDOX XT06 Trench Isolation Cross Section Mid-oxide module for MV/HV elements PMV Medium-voltage P-channel module NGD Extended MV n-channel module DEPL MV/HV depletion NMOS module HVS HV 40V PMOS, ext. HV 60V NMOS module HVE Ext. HV 20V NPN, 60V m-DMOS
X-FAB Semiconductor Foundries
Original
0.6 um cmos process CMOS Process Family hv 082 1P2M pmos depletion nmos

SMD DIODE 1N4007 DATASHEET

Abstract: PC817 SMD BZV55C3.0V STTH108A STPS1150A STPS20120D 1N4007 SMD universal diode zener diode SMD - SOD80 STMicroelectronics, SMD diode, high voltage ultrafast, 800V, 1A, SMA STMicroelectronics, SMD diode, power schottky, 150V, 1A, SMA STMicroelectronics, diode, power schottky, 120V, 20A, TO-220AB HV diode, 1000V, 1A, DO
-
Original
86H-6017C SMD DIODE 1N4007 DATASHEET PC817 SMD smd transistor t1A SMD resistors 2r2 transistor SMD 24 optocoupler PC817 STEVAL-ISA019V2 F/35V 1600VDC X7R/50V NPO/50V B32653A1682000

klystron

Abstract: SMD magnetron application for HV energy Capacitor's charger& discharger, various HV Loads, HV Snubber, HV dampping ,on HV diode, R-C tank,in Ion gun's termination,etc. * Resistance rating : 1k to 700M * Power Ratings up , ) · Electrophoresis * HV Capacitor Charging, Discharging ·CT, MRI · Image Intensifier ·
Willow Technologies
Original
HTE15 HTE19 HTE25 HTE24 klystron SMD magnetron hv 102 HTE39

DIODE marking LV

Abstract: 1 MHz, VN=0V, VIN=2.5V; Note 2 15 VF_HV HV Diode Forward Voltage Positive Voltage , diode protects supply rail No need for external by-pass capacitors Each I/O pin can withstand over , Channel 3 CH3 I/0 LV low-capacitance ESD Channel 4 VCC HV VDD HV ESD Channel 5 , V LV Diode Forward Voltage Positive Voltage Negative Voltage IF = 10mA; TA=25°C LV , pin and adjacent signal pin At 1 MHz, VN=0V, VIN=1.65V; Note 2 0.11 pF ILEAK_HV HV
California Micro Devices
Original
CM1241

CM1241

Abstract: CM1241-04D4 , VN=0V, VIN=2.5V 53 VF_HV HV Diode Breakdown Voltage Positive Voltage IF = 10mA; TA , High voltage zener diode protects supply rail No need for external bypass capacitors Each I/O pin can , Low-capacitance ESD Channel 4 VCC HV VDD HV ESD Channel 5 GND Ground 6 VN Negative , UNITS 6.8 8.2 9.2 V ­1.05 ­0.9 ­0.6 V LV Diode Reverse Voltage (Positive Voltage) IF = 10mA; TA= 25° C LV Diode Forward Voltage (Negative Voltage) IF = 10mA; TA= 25° C
ON Semiconductor
Original
CM1241-04D4 CM1241/D

CM1241

Abstract: Input Capacitance At 1 MHz, VN = 0 V, VIN = 2.5 V 53 VF_HV HV Diode Breakdown Voltage , Capacitance Change with Temperature and Voltage High Voltage Zener Diode Protects Supply Rail No Need for , 3 CH3 I/O LV Lowâ'capacitance ESD Channel 4 VCC HV VDD 5 GND 6 VN , Supply Rail DAP GND Bottom View (Pins Up View) 8 7 6 5 1 2 3 Pin 1 Marking HV ESD , Diode Reverse Voltage (Positive Voltage) IF = 10 mA; TA = 25°C 6.8 8.2 9.2 V LV
ON Semiconductor
Original
511BF 3000/T BRD8011/D

CM1241

Abstract: CM1241-04D4 HV Channel Leakage Current HV Channel Input Capacitance HV Diode Breakdown Voltage Positive Voltage , with Temperature and Voltage High Voltage Zener Diode Protects Supply Rail No Need for External Bypass , CH3 VCC GND VN VN VN GND Type I/O I/O I/O HV VDD Description LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel HV ESD Channel Ground Negative Voltage Supply Rail , CHARACTERISTICS (Note1) Symbol VF Parameter LV Diode Reverse Voltage (Positive Voltage) LV Diode Forward Voltage
ON Semiconductor
Original
WDFN8 change over circuit in hv

kvp 42 DIODE

Abstract: kvp 68A 1 -B O O -67B -O B 98 I I I 2 NEW E-MAIL ADDRESS EDI-SALES@INTERNETMCI.COM HV DIODE , SERIES HAB WAB YAB ZAB 3W EF, EG, EH XL10 EK EM EP ER HV VT PAGE 4 6 8 10 12 14 16 14 14 14 14 18 20 , FPI-W 58 HAB 4 HTD3 142 HTDR3 144 HTD5,15,30 140 HV 18 HVPF 88 HX 18 KHP 120 KMO 124 KVF 126 KVO 124 KVP
-
OCR Scan
14-32KV kvp 42 DIODE kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode TVR20 TVR30 100CYL LHC25 RHC25

Kvp 26A

Abstract: kvp 3a products. HV DIODE ASSEMBLIES CURRENT 2.25-3.00A 2.25-2.50A 0.75-1 A 0.7-0.9A 0.6-1 A 500mA 0.4-.5A , YAB ZAB HAB 3W EF, EG, EH XL10 EK EM EP ER HV VT PAGE 6 8 10 4 12 14 16 14 14 14 14 18 20 STANDARD , FPI-W HAB HTD3 HTDR3 HTD5,15,30 HV HVPF HX KHP KMO KVF KVO KVP LHC MPI PAGE 14 14 14 14 80 60 90 58 4
-
OCR Scan
Kvp 26A kvp 3a 100-200KV kvp 26A W DIODE kvp 26 DIODE 8ph ZENER 5-30KV 200CYL XLU12

P-Channel Depletion Mode FET

Abstract: 5155 transistor Universa!Semiconductor HV DIODE (USH5155) ELECTRICAL CHARACTERISTICS {TA = + 25°C ) PARAMETER Breakdown Voltage Leakage , BVr ( V o lt s ) The Universal HV diode is a diffused junction device that is dielectrically , DMOS FET P-channel enhancement mode DMOS FET insulated gate thyristor (IGT) thyristor diode CMOS , INPUT ^\ O F F ) [A -M < - 10% Universa!Semiconductor HV N-CHANNEL ENHANCEMENT MODE , USH5156 pinout 37 Universa!Semiconductor HV P-CHANNEL ENHANCEMENT MODE DMOS FET (USH5155 & USH5156
-
OCR Scan
P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A breadboard 400
Showing first 20 results.