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Part : HSU83-2TRF-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 4,000 Best Price : $0.07 Price Each : $0.09
Part : HSU83JTRF-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 9,000 Best Price : $0.19 Price Each : $0.24
Part : HSU83TRFE Supplier : Renesas Electronics Manufacturer : ComSIT Stock : 60,000 Best Price : - Price Each : -
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HSU83 Datasheet

Part Manufacturer Description PDF Type
HSU83 Hitachi Semiconductor Small Signal Diode Original
HSU83 Renesas Technology Silicon Epitaxial Planar Diode for High Voltage Switching Original
HSU83 Renesas Technology Silicon Epitaxial Planar Diode for High Voltage Switching Original
HSU83-E Renesas Technology DIODE FAST RECOVERY RECTIFIER 300V 0.1A 2URP Original

HSU83

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-307A(Z) Rev , suitabiefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 , 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage , =30 mA, Irr = 3mA HSU83 Main Characteristic 0 0.2 0.4 0.6 0.8 1.0 Reverse , voltage \ HSU83 Package Dimensions Unit : mm Cathode Mark % 1. Cathode 2. Anode Hitachi Code -
OCR Scan

MARK Z

Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI Features · High reverse voltage. (VR=250V) · Ultra small Resin Package (URP) is suitable for surface mount design. ADE , . HSU83 i[T Package Cod URP I ] 2 1. Cathode 2. Anode Laser Mark T Absolute Maximum , £ Hitachf ^ semiconductor ^ HSU83 Forward current l F (A) 0 0.2 0.4 0.6 , Vr (V) Fig.3 Capacitance Vs. Reverse voltage 2 HSU83 Package Dimensions Cathode Mark Unit
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MARK Z ADE-208-247
Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-307A(Z) Rev , Mark Package Code HSU83 T URP Outline Cathode mark Mark I1 I 1! 1 % I] 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value , = 1 MHz â'" 100 ns lF = lR=30 mA, lrr = 3m A HITACHI HSU83 Main Characteristic HITACHI 3 HSU83 Package Dimensions Unit mm Cathode Mark 1. Cathode 2. Anode Hitachi Code -
OCR Scan

Hitachi DSA002789

Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev 1 Features , surface mounting and high speed assembly. Ordering Information Type No. HSU83 Laser Mark T Package Code URP Outline Cathode mark Mark 1 T 2 1. Cathode 2. Anode HSU83 Absolute Maximum , 0V, f = 1 MHz I F = I R =30 mA, I rr = 3mA HSU83 Main Characteristic -2 -5 10 10 (A) 10 , HSU83 Package Dimensions Unit : mm Cathode Mark 1.25±0.15 0.3±0.15 T 1.7±0.15 2.5±0.15 1
Hitachi Semiconductor
Original
Hitachi DSA002789

HSU83

Abstract: DSA003641 HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev. 1 Jun , Package Code HSU83 T URP Outline 1 T Cathode mark Mark 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage , 100 ns IF = IR =30 mA, Irr = 3mA Rev.1, Jun. 1996, page 2 of 5 VR = 300V HSU83 Main , Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage Rev.1, Jun. 1996, page 3 of 5 HSU83
Hitachi Semiconductor
Original
DSA003641 D-85622
Abstract: Epitaxial Planar Diode for High Voltage Switching Features High reverse voltage. (VR=250V) Ultra small R esin Package (URP) is suitable for surface mount design. Outline Cathode mark Mark Ordering Information Type No. HSU83 Ü 2 1. Cathode 2. Anode Laser Mark Package Cod URP Absolute Maximum Ratings * (Ta = 25°C) Item Peak reverse voltage Reverse , =30mA,lrr=3mA,R|_=100i2 1 39 HSU83 Forward voltage VF (V) Reverse voltage Vr (V) Fig -
OCR Scan
HSU83------------------------S

HSU83

Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev 1 Jun , Package Code HSU83 T URP Outline 1 T Cathode mark Mark 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage , rr - - 100 ns I F = IR =30 mA, Irr = 3mA 2 VR = 300V HSU83 Main , Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSU83 Package Dimensions Unit
Hitachi Semiconductor
Original

HSU83

Abstract: PTSP0002ZA-A HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0300 Rev.3.00 Feb 16 , Mark Renesas Code Previous Code HSU83 T PTSP0002ZA-A URP Pin Arrangement 1 T Cathode mark Mark 2 1. Cathode 2. Anode Rev.3.00 Feb 16, 2005 page 1 of 4 HSU83 Absolute , = 100 mA HSU83 Main Characteristics 10­5 10­2 10­4 Reverse current IR (A , ) Fig.3 Capacitance vs. Reverse voltage Rev.3.00 Feb 16, 2005 page 3 of 4 HSU83 Package
Renesas Technology
Original

Hitachi DSA00773

Abstract: HSU83 HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev 1 June , Package Code HSU83 T URP Outline 1 T Cathode mark Mark 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage , ns IF = IR =30 mA, Irr = 3mA VR = 300V HSU83 Main Characteristic -2 10 10 10 10 , .2 Reverse current Vs. Reverse voltage HSU83 Package Dimensions Unit : mm 1.7±0.15 2.5±0.15
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Original
Hitachi DSA00773
Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0200Z (Previous: ADE , Type No. HSU83 Laser Mark T Package Code URP Pin Arrangement Cathode mark Mark 1 T 2 1. Cathode 2. Anode Rev.2.00, Mar.22.2004, page 1 of 4 HSU83 Absolute Maximum Ratings (Ta = 25 , mA, Irr = 3 mA Rev.2.00, Mar.22.2004, page 2 of 4 HSU83 Main Characteristics 10­2 10­3 , ) 10 Fig.3 Capacitance vs. Reverse voltage Rev.2.00, Mar.22.2004, page 3 of 4 HSU83 Renesas Technology
Original

HSU83

Abstract: PTSP0002ZA-A . HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0300 Rev.3.00 Feb 16 , Mark Renesas Code Previous Code HSU83 T PTSP0002ZA-A URP Pin Arrangement 1 T Cathode mark Mark 2 1. Cathode 2. Anode Rev.3.00 Feb 16, 2005 page 1 of 4 HSU83 Absolute , = 100 mA HSU83 Main Characteristics 10­5 10­2 10­4 Reverse current IR (A , ) Fig.3 Capacitance vs. Reverse voltage Rev.3.00 Feb 16, 2005 page 3 of 4 HSU83 Package
Renesas Technology
Original
Abstract: HSU83 Spice parameter * Model generated on Oct 2, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSU83 D +IS=2.011079E-8 +BV=250 +VJ=0.5163272 +KF=0 +XTI=3 +TT=50E-9 +RS=2.1422903 +IBV=5.37971E-9 +M=0.1692533 +AF=1 +EG=1.17 +N=2.0884515 +CJO=1.098E-12 +FC=0.5 * END of HSU83 (Small signal diode) * IS: Saturation current, Unit:A * BV: Rev.breakdown voltage, Unit:V * VJ: Junction potential, Unit:V * KF: Flicker noise coefficient * XTI: Isat temperature exp. * TT: Transit time, Unit: sec Hitachi Semiconductor
Original

HSU83

Abstract: products contained therein. HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE , Type No. Laser Mark Package Code HSU83 T URP Pin Arrangement 1 T Cathode mark Mark 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , , page 2 of 5 VR = 300V HSU83 Main Characteristic -2 10 -3 Reverse current I R (A , voltage Rev.1, Jun. 1996, page 3 of 5 HSU83 Package Dimensions Unit: mm 1.7±0.15 2.5±0.15
Hitachi Semiconductor
Original
Abstract: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0300 Rev.3.00 Feb 16 , for high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 , 2 1. Cathode 2. Anode Rev.3.00 Feb 16, 2005 page 1 of 4 HSU83 Absolute Maximum Ratings , IR = 30 mA, Irr = 3 mA Rev.3.00 Feb 16, 2005 page 2 of 4 HSU83 Main Characteristics 10­2 , VR (V) 10 Fig.3 Capacitance vs. Reverse voltage Rev.3.00 Feb 16, 2005 page 3 of 4 HSU83 Renesas Technology
Original

HSK277

Abstract: .115 HSS104.117 HSU83 .139 HSU88 . HSU276
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HSK277 HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B

HVU12

Abstract: HSM126S Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK SMD2 URP Glass Insertion Type DO-35 MHD SMD LLD Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C 1N4148 1 S 2 0 7 4 © '1 1S2075® *1 1S2076 1S2076A 1SS84 1SS118 HSU83 15581 15582 15583 HSS104 155119 155120 1SS270 1SS270A HSK120 High voltage switching HSM83 HSS81 HSS82 HSS83 HSK83 HSK122 ' 1 High reliability diode Zener Diode Plastic SMD1 Application MPAK LRP SMD2 URP Glass
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OCR Scan
1SS86 1SS106 1SS174 HSM126S HVU12 HVC308A DO-35 rectifier HSM8 pin diode do35 DO-41 1N4728A 1N5223B HZM27WA HZT33 HSB88WS

iss86

Abstract: 1SS119 MHD OD M PAK URP CM PAK HSS82 HSS83 HSK83 HSK122 HSM83 HSM122 HSU83 HSB83J - - - Ok Oir
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OCR Scan
1SS119 iss86 1SS108 1SS196 1SS199 HSR101 ISS86 1SS165

1SS106

Abstract: 1SS172 HSM2694 HSM2S36C HSM2838C HSR101 HSS81 HSS82 HSS83 HSS104 HSU83 U Q tlfiO P*9® Package ootte Type
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OCR Scan
1SS172 1S1146 1S2074 1SS81 1SS82 1SS83 1SS85

74ls111

Abstract: 2SA872 spice HSS104 HSS81 HSS82 HSS83 HSU119 HSU83 Diodes\Presentation di0999 Diodes\Rectifiers\Schottky Barrier , HSU276 HSU83 HSU88 Diodes\Simulation Model Data\HV Series hvb27wk hvc200a hvc202a hvc300a hvc306a hvc308a
Hitachi Semiconductor
Original
74ls111 2SA872 spice 74LS122 spice model 74ls221 Spice BC240 hitachi mosfet audio application note 2SB715 2SB738 2SB740 2SB831 2SC1213 2SC1344

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent HSM276SR HSM2694 HSM2836C HSM2838C HSN278WK HSS81 HSS82 HSS83 HSS104 HSU83 HSU88 HSU119 HSU227 , 1SS82 switching 1SS83 MHD HSS81 HSS82 HSS83 LLD HSK83 HSK122 MPAK HSM83 URP HSU83 CMPAK , HSB124S HSB83YP HSU83 HSU119 HSC119 1SS353,1SS355 1SS400,1SS380 ·Zener Diodes Classification , HSD278 HSU83 HSU88 HSU119/HSC119 HSU227 HSU276/HSC276 HSU276A HSU277/HSC277 HVC142 HVC145/HVD145
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1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent HZU10 HZU11 HZU12 HZU13 HZU15 HZU16

marking code 62z

Abstract: philips surface mount zener diode v6 HSS83 HSS104 HSU83 HSU88 HSU119 HSU227 HSU276 HSU276A HSU277 HVB14S HVB27WK HVB387BWK HVC131 HVC132 , MHD HSS81 HSS82 HSS83 LLD HSK83 HSK122 MPAK HSM83 URP HSU83 CMPAK HSB83 CMPAK-4 HSB83YP Note: (H) and , No. HRU0103A/HRC0103A HRC0203B HRU0302A HSC88 HSU83 HSU88 HSU119/HSC119 HSU227 HSU276/HSC276 HSU276A
Hitachi Semiconductor
Original
marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 HVD141/142 HVD141 HVD142 HZM24N HZM10N HZM16N

marking code V6 33 surface mount diode

Abstract: philips surface mount zener diode v6 HSM276SR HSM2694 HSM2836C HSM2838C HSN278WK HSS81 HSS82 HSS83 HSS104 HSU83 HSU88 HSU119 HSU226 , switching 1SS83 MHD HSS81 HSS82 HSS83 LLD HSK83 HSK122 MPAK HSM83 URP HSU83 CMPAK HSB83 CMPAK , DAN217U DA228U DA204U IPS300 IPS301 IPS302 HSB2836 HSB2838 HSB123 HSB124S HSU83 HSU119
Renesas Technology
Original
marking code V6 33 surface mount diode zener diode application 04BZ 1w402 1w379 semiconductor 1SS82 HZC10 HZC11 HZC12 HZC13 HZC15 HZC16
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