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Part : TSHSM-107-S-02-F-H-AP Supplier : Major League Electronics Manufacturer : Future Electronics Stock : - Best Price : $0.4850 Price Each : $0.5950
Part : HSM107S-JTL Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 12,000 Best Price : $0.28 Price Each : $0.34
Part : HSM107S-JTL-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 30,000 Best Price : $0.10 Price Each : $0.13
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HSM107S Datasheet

Part Manufacturer Description PDF Type
HSM107S Hitachi Semiconductor Silicon Schottky Barrier Diode for System Protection Original
HSM107S Hitachi Semiconductor Silicon Schottky Barrier Diode for System Protection Original
HSM107S Kexin Silicon Schottky Barrier Diode Original
HSM107S Renesas Technology Diode, Schottky Diode, Dual Series, SOT-23, 3-Pin Original
HSM107S Renesas Technology Silicon Schottky Barrier Diode for System Protection Original
HSM107S TY Semiconductor Silicon Schottky Barrier Diode - SOT-23 Original
HSM107S N/A The Diode Data Book with Package Outlines 1993 Scan

HSM107S

Catalog Datasheet MFG & Type PDF Document Tags

ADE-208-058E

Abstract: Hitachi DSA00497 ADE-208-058E(Z) HSM107S Silicon Schottky Barrier Diode for System Protection Rev. 5 Aug. 1995 Features Pin Arrangement · Low VF and high efficiency. · HSM107S which is interconnected , Package Code HSM107S C5 MPAK 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum , =5V - - HSM107S 10-1 10 -2 -2 Reverse current I R (A) Forward current I F (A , voltage VF (V) 1.0 -6 10 40 10 HSM107S Example of application circuite SBD (EX
Hitachi Semiconductor
Original
SC-59A Hitachi DSA00497
Abstract: AD E-208-058E(Z) HSM107S Silicon Schottky Barrier Diode for System Protection HITACHI Features · Low Vp and high efficiency. · H S M 107S w h ich is in tercon n ected in series configuration , Type No. HSM107S Mark C5 Package Code MPAK 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute , itachi semiconductor ^ i HSM107S Forward current Ip (A) < ¡r c i- k _ QJ 1 3 o 0 , HSM107S Example of application circuite Package Dimensions Unit: mm Mark 0 . 4 ! g; 05 -
OCR Scan
Abstract: ADE-208-058E(Z) HSM107S Silicon Schottky Barrier Diode for System Protection HITACHI Features * Low VF and high efficiency. * HSM 107S which is interconnected in series configuration is , Information Type No. HSM107S Mark C5 Package Code MPAK Absolute Maximum Ratings (Ta = 25 °C , =5V < lF = 10 mA * C=200pF, Both forward and reverse direction 1 pulse HSM107S 10'1 10 -2 , . Reverse voltage HSM107S Example of application circuite Package Dimensions Unit: mm 0 . 1 6 -
OCR Scan
Abstract: HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z (Previous: ADE-208-058F) Rev.7.00 Jan.28.2004 Features · Low VF and high efficiency. · HSM107S which is interconnected in , assembly. Ordering Information Type No. HSM107S Laser Mark C5 Package Code MPAK Pin Arrangement 3 1 , HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Peak forward current Non-Repetitive , 5 V Rev.7.00, Jan.28.2004, page 2 of 5 HSM107S Main Characteristic 10­1 10­2 10­2 Renesas Technology
Original
Abstract: HSM107S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-058F(Z) Rev 6 Sep. 1998 Features â'¢ Low V Fand high efficiency. â'¢ HSM107S which is interconnected in , speed assembly. Ordering Information Type No. Laser M ark Package Code HSM107S C5 MPAK Outline TJz Qï (Top View) Cathode 2 Anode 1 Cathode 1 Anode 2 HSM107S , voltage Unit > Reverse current Max HSM107S Main Characteristic HITACHI 3 HSM107S -
OCR Scan

HSM107S

Abstract: SC-59A HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev. 6 Sep. 1998 Features · Low VF and high efficiency. · HSM107S which is interconnected in series configuration is , . Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Outline 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings , =5V Rev.6, Sep. 1998, page 2 of 6 HSM107S Main Characteristic 10-1 10 -2 -2 Forward
Hitachi Semiconductor
Original
Hitachi DSA0047 D-85622

diode hitachi schottky

Abstract: Hitachi DSA002711 HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev 6 Sep. 1998 Features · Low VF and high efficiency. · HSM107S which is interconnected in series configuration is , Information Type No. HSM107S Laser Mark C5 Package Code MPAK Outline 3 2 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 (Top View) HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Reverse , at VR=5V 2 HSM107S Main Characteristic -2 10-1 10 10 -2 Forward current IF
Hitachi Semiconductor
Original
diode hitachi schottky Hitachi DSA002711

SC-59A

Abstract: Hitachi DSA00304 HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev 6 Sep. 1998 Features · Low VF and high efficiency. · HSM107S which is interconnected in series configuration is , . Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Outline 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings , HSM107S Main Characteristic 10-1 10 -2 -2 Forward current IF (A) Reverse current I R
Hitachi Semiconductor
Original
Hitachi DSA00304 IC safety circuite heating

HSM107S

Abstract: HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z (Previous: ADE-208-058F) Rev.7.00 Jan.28.2004 Features · Low VF and high efficiency. · HSM107S which is interconnected in , assembly. Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Pin , . Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit , .28.2004, page 2 of 5 HSM107S Main Characteristic 10­2 10­1 Reverse current IR (A) Forward
Renesas Technology
Original

HSM107S

Abstract: SC-59A products contained therein. HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F (Z) Rev. 6 Sep. 1998 Features · Low VF and high efficiency. · HSM107S which is interconnected in , assembly. Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Pin Arrangement 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute , 60µA at VR=5V Rev.6, Sep. 1998, page 2 of 6 HSM107S Main Characteristic 10-1 10 -2 -2
Hitachi Semiconductor
Original
Abstract: HSM107S Silicon Schottky Barrier Diode for System Protection Features · Low Vp and high efficiency. · HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also missoperation on electric systems. · MPAK package is suitable , Type No._ Mark_ Package Code HSM107S C5 MPAK (Top View) Cathode 2 Anode 1 Cathode 1 , Criterion ; Ir > 60(iA at Vr =5V 275 HSM107S 276 HSM107S Example of application circuite -
OCR Scan

HSM107S

Abstract: . HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z (Previous: ADE-208-058F) Rev.7.00 Jan.28.2004 Features · Low VF and high efficiency. · HSM107S which is interconnected in , assembly. Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Pin , . Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit , .28.2004, page 2 of 5 HSM107S Main Characteristic 10­2 10­1 Reverse current IR (A) Forward
Renesas Technology
Original

marking C5

Abstract: HSM107S Diodes SMD Type Silicon Schottky Barrier Diode HSM107S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 HSM107S which is interconnected in series configuration is designed 0.55 Low VF and high efficiency. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 for protection from not only external excessive voltage but also +0.05 0.1-0.01 +0.1 0.97-0.1 miss-operation on electric systems. 0-0.1 Absolute Maximum Ratings Ta =
Kexin
Original
marking C5 C5 marking diode
Abstract: Product specification HSM107S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 HSM107S which is interconnected in series configuration is designed 0.55 Low VF and high efficiency. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 for protection from not only external excessive voltage but also +0.05 0.1-0.01 +0.1 0.97-0.1 miss-operation on electric systems. 0-0.1 Absolute Maximum Ratings Ta = 25 Symbol Value Parameter TY Semiconductor
Original

HSK277

Abstract: . 254 HSM88WA . 256 HSM88WK . 258
-
OCR Scan
HSK277 HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B

HVU12

Abstract: HSM126S Plastic SMD1 Application MPAK Schottky & PN junction type HSM107S HSM126S Rectifier Diode Plastic SMD1
-
OCR Scan
1S2076A 1SS86 1SS106 1SS174 HVU12 HVC308A DO-35 rectifier HSM8 pin diode do35 pn junction diode application DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C

HZM6.8FA

Abstract: Surge, Noise HSM107S HSM126S Vr (V) max 8 20 lo (mA) max 50 200 If s m (A) max 0.5 2
-
OCR Scan
HZM6.8FA HSM109WK HSM112WK HSM113WK HSM125WK HZM27WA HZM27FA

1ss283

Abstract: 1SS281 10 15 10 0. 58 0. 2 2 0. 85 0 (tV-KW). AVF
-
OCR Scan
1SS239 1SS246 1SS271 1SS276 1SS281 1SS282 1ss283 1SS237 HSR276 HSR277 1SS2371 855MH 800MH 1SSZ42

1SS276

Abstract: 1SS281 10 15 10 0. 58 0. 2 2 0. 85 0 (tV-KW). AVF
-
OCR Scan
1SS285 1SS286 p150n 1SS28K1 SS281 1SS293 1SS315

1ss283

Abstract: 495h 10 15 10 0. 58 0. 2 2 0. 85 0 (tV-KW). AVF
-
OCR Scan
495h HM 1211 ISS319 1SS284 3AVF HM55 HRW0203A HSK151 HSM276S 100MH EI494

marking code 62z

Abstract: philips surface mount zener diode v6 HSM107S HSM124S HSM126S HSM198S HSM276AS HSM276ASR HSM276S HSM276SR HSM2692 HSM2693A HSM2694 HSS81 HSS82 , Package Application System protection Code MPAK Type No. HSM107S HSM126S [VRRM] (V) 8 [20] IO (mA) 50 200 , HRW0302A HRW0502A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM107S HSM124S HSM126S
Hitachi Semiconductor
Original
marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 HVD141/142 HVD141 HVD142 1S2074 HZM24N HZM10N
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