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LTC1574CS-3.3#TR Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1574CS#PBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT3466EDD#TRPBF Linear Technology LT3466 - Dual Full Function White LED Step-Up Converter with Built-In Schottky Diodes; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1574CS-3.3#TRPBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1574CS-3.3#PBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1574CS#TR Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

HP STEP RECOVERY DIODES

Catalog Datasheet MFG & Type PDF Document Tags

HP 5082-0885

Abstract: HP STEP RECOVERY DIODES Environments Description/ Applications HP Step Recovery Diodes are constructed using modern epitaxial , Packaged Step Recovery Diodes SS88 5082-0300 Technical Data KSSg 5082-0800 5082-0830 5082-0835 , nonlinearity and efficiency for frequency multiplication. These step recovery diodes have the basic design , space systems. Mechanical Specifications Hewlett-Packard's Step Recovery Diodes are available in a , GHz. 10 12 14 16 18 20 f0 (GHz> Figure 3. Predicted power output curves for 03XX step recovery
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HMXR-5001

Abstract: HP 5082 7000 Step Recovery Diodes . . 301 Integrated Products , , Schottky Barrier Diodes, PIN and High Conductance Diodes, and Step Recovery Diodes. At the end of each , .â'¢.â'¢.â'¢.â'¢â'¢.â'¢.â'¢.â'¢â'¢.â'¢.â'¢ Step Recovery Diode Chip , Purpose Schottky Chip . 125 Step Recovery Diode , 5082-0090 5082-0094 5082-0097 5082-0112 5082-0113 Step Recovery Diode Chip
Hewlett-Packard
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DVB6723-04

Abstract: dvb6101 Step Recovery Diodes, Multichip SRD and SRD Chips â  05flS443 Gooiabb TIA «ALP â'" ALPHA , Reliability TD1-M Description Alpha Step Recovery Diodes (SRD) are oxide passi-vated, epitaxial silicon , . Applied Voltage for Square Root Law and A-Mode Multipliers and Step Recovery Diodes 4-68 Step Recovery , . Transition Time, Tt, Test Set-Up Figure 6. Typical SRD Multiplier Circuit 4-69 Step Recovery Diodes , multiplier factor where F0UTPUT = N times FINPUT. 4-70 Step Recovery Diodes, Multichip SRD and SRD Chips â
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HP STEP RECOVERY DIODES

Abstract: construction of varactor diode Voltage for Square Law and A-Mode Multipliers and Step Recovery Diodes 4-76 A-Mode Multiplier Diodes , The Alpha A-Mode diode combines the characteristics of the step recovery diode and the square law , forward conduction to use the charge storage characteristics of the step recovery diode, but it also uses , A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips 05A5443 0001374 0=14 â  ALP , Reliability Â¥ Description Alpha A-Mode diodes are oxide passivated, epitaxial silicon mesa designs
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HP STEP RECOVERY DIODES construction of varactor diode varactor diode application impulse generator microwave M92A CVA1116-06 CVA1116-12 CVA1116-18 CVA1116-24 CVA1116-30 CVA1116-36
Abstract: Step Recovery Diodes, Multichip SRD and SRD Chips â'" ALPHA IND/ S E M I C O N D U C T O R , â  High Cutoff Frequency â  High Reliability Description Alpha Step Recovery Diodes (SRD) are , . Capacitance vs. Applied Voltage for Square Root Law and A-Mode Multipliers and Step Recovery Diodes Step , (- , % Multiplier Factor* = 10 Step Recovery Diodes, Multichip SRD and SRD Chios â'" ALPHA IND -
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DVB6870-06 DVB6870-12 DVB6870-18 DVB6871 DVB6871-12 DVB6871-18

HP STEP RECOVERY DIODES

Abstract: Frequency Multipliers x5 to step recovery diodes (SRD). These diodes are available in the low-cost SOT-23 package. Several , elimination of the bias resistor. Unfortunately the step recovery diodes currently are too expensive to allow , epitaxial PIN switching diodes have characteristics which are very similar to those of a step recovery , oscillator. However, there is an alternative low-cost solution using HP's HSMP-3820 diodes. Low-Cost Multiplier A conventional step recovery diode multiplier consists of a diode, a biasing resistor, and
Hewlett-Packard
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HSMP-3822 MSA-08XX Frequency Multipliers x5 Frequency multiplier comb generator frequency multiplier 1 mhz 100MH 5091-4918E 5966-4998E

hp 5082 step recovery

Abstract: HP 5082-0113 HEWLETT^ PACKARD COMPONENTS 5082-0100 series STEP RECOVERY 5082-0200 series DIODES , Specifications Hewlett-Packard's step recovery diodes are available in a variety of packages. Special package , for 03XX step recovery diodes ¡in X3, X4, and X5 multiplier applications. These results were obtained , PACKAGES SPECIAL ELECTRICAL SELECTIONS AVAILABLE UPON REQUEST Description/Applications These diodes are manufactured using modern epitaxial growth techniques. The diodes are passivated with a thermal oxide for
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hp 5082 step recovery HP 5082-0113 5082-0151 1N5163 1N5164 1430C MIL-S-19500

IN 1004 diodes

Abstract: boonton 230A HEWLETT^ PACKARD COMPONENTS HIGH CONDUCTANCE DIODES 5082-1001 (in 4456) 5082-1002 5082-1003 , /Applications The 5082-1000 series of diodes feature planar silicon epitaxial construction to provide high , minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications , MILLIMETERS AND (INCHES) Mechanical Specifications The HP Outline 11 package has a glass hermetic seal with , ) Maximum Reverse Leakage Current ir oua) Maximum Total Capacitance Co (PF) Maximum Reverse Recovery Time
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IN 1004 diodes boonton 230A HP 5082-1003 diode 5082-1001 5082-1001 1N4456

HP STEP RECOVERY DIODES

Abstract: 141T in Chapter 11.08, Reference 4. SUMMARY The HP 5082-0335 Step Recovery Diodes are intended fo r , background material on step recovery diodes and m ultipliers is found in A/N 918, 983, 984, and 989 , \ m HEWLETT PACKARD APPLICATION NOTE 928 Ku-band Step Recovery Multipliers INTRODUCTION This Application Note shows the design of a practical X8 single-stage Step Recovery Diode m ultiplier with typical maximum output power of 75 mW at 16 GHz. The design is based on HP 5082-0335 Step
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141T HP141T Ku-band Step Recovery Multipliers iris hall 5082033 step recovery diodes

CI 4000

Abstract: MIL-STD-750 METHOD 2036 Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 (1N4456) Features â'¢ Fast Switching â , diodes feature planar silicon epitaxial construction to provide high conductance, low capacitance, and nanosecond turn-on and turn-off. Turn-on time and voltage overshoot are minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications such as core drivers, pulse , Specifications The HP Outline 11 package has a glass hermetic seal with dumet leads. The package will meet
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CI 4000 MIL-STD-750 METHOD 2036 175 WIV High Switching hp 1002 HP 5082-1006 MIL-STD-750

HP STEP RECOVERY DIODES

Abstract: comb generator the proper value of bias voltage, step recovery diodes work quite well with a zero ohm DC return which , Sinusoidal Current Figure 2. Distorted Forward Current in Step Recovery Diodes MEASUREMENTS A study , . Harold T. Friis, "Analysis of Harmonic Generator Circuits for Step Recovery Diodes", Proc. IEEE, Vol. 55 , Using Step Recovery Diodes" Microwave Journal, Vol. 10, No. 4, April, 1967, pp. 69-78. 3 , . Step recovery diode impulse generators include an inductance in series with the diode. The voltage
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33002B 33005D step recovery diode application step recovery diode zero bias diode Microwave Generator 33003B 33004B

diode cross reference

Abstract: 5082-0833 ASRD 700 SERIES GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: PACKAGE STYLE 01A The ASRD 700 Series of Step Recovery Diodes are Designed for General Purpose VCO and Sampler Applications. FEATURES INCLUDE: · Transition Time as Low as 70 pS · Hermetic Glass Package MAXIMUM RATINGS 50 mA , . REV. A 3/3 ASRD 700 SERIES GLASS PACKAGE STEP RECOVERY DIODE CROSS REFERENCE HP P/N ASI , 0.4 pF REV. A 1/3 ASRD 700 SERIES GLASS PACKAGE STEP RECOVERY DIODE DYNAMIC
Advanced Semiconductor
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diode cross reference 5082-0833 5082-0815 diode 725 IR 733 5082-0825

HP 5082-0180

Abstract: HP STEP RECOVERY DIODES Generation with Step Recovery Diodes I. INTRODUCTION Since its commercial introduction by HP, the Step Recovery Diode (SRD) has found many useful applications. One major area of applications is in pulse shaping , square yyave lag the input current by 90°. This is expected since ideally the step recovery diodes are , If t , These are fast silicon P-N junction switching diodes. If faster recovery times are required fo r extreme
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HP 5082-0180 SRD diode Analog Applications Journal

MIL-STD-750 METHOD 2036

Abstract: HP 5082-0180 Packaged Step Recovery Diodes Technical Data 5082-0112/13/14 5082-0151 5082-0153 5082-0180 5082-0833 , Description/ Applications These diodes are manufactured using modern epitaxial growth techniques. The diodes , of MIL-S-19500. These diodes are intended for medium and low power multipliers. Typical applications , Mechanical Specifications The HP Outline 15 package has a glass hermetic seal with plated Dumet leads which , typically 0.18 pF and 1.8 nH respectively. The HP Outline 11 package has a glass hermetic seal with plated
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hp 5082-0151 5082-0112 5082-0180 5082-0153 hp 5082 0180 5082-0840

HP 5082-0180

Abstract: HP 5082-0113 H E W L E T T P A C K A R D CLASS PACKAGED STEP RECOVERY DIODES 5082-0112 5082-0113 , diodes are m anufactured using modern epitaxial grow th techniques. The diodes are passivated w ith a , 0 . These diodes are intended for medium and low power m ultip liers. Typical applications are in , testing 5082-0151 and -0840. A pulse of 1.0A is used for all other diodes. The bias current is adjusted , . OUTPUT WAVE SHAPE If I \ jr PULSE G E N ER AT O R HP 80S2A r SAM PLING OSCILLO SCO PE
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5082-0114 HP 5082-0833 4447S T-07-11

2N2369 Spice

Abstract: HP355C OSCILLOSCOPE VIA HP-1120A FET PROBE TIME-CORRECTED INPUT STEP TO OSCILLOSCOPE VIA HP-1120A FET PROBE , 1µF ­ DELAY COMP TIME-CORRECTED INPUT STEP TO TEKTRONIX 661 OSCILLOSCOPE VIA ×10 HP , and high DC gain while operating at low supply current. Settling time is 30ns to 0.1% for a 5V step , amplifier output will step to ­ VIN when the input is driven. During slew, the settle node is bounded by the diodes, limiting voltage excursion. When settling occurs, the oscilloscope probe voltage should
Linear Technology
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2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 2N2369 avalanche HP1120A AN79-29 AN79-30 AN79-31 AN79-32

asymmetric thyristor

Abstract: 15 kV thyristor 13-kV Rectifiers: Studies on Diodes and Asymmetric Thyristors F.-J. Niedernostheidea), H.-J , applications where energy storage capacitors or inductors have to be discharged. High-voltage diodes are very , for the diode. Numerical studies demonstrate improved reverse recovery behavior by this type of , aluminum vacuum pre-depositions, each followed by a drive-in step. A boron implantation with a subsequent drive-in step was used to improve the contact resistance of the pbase shorts (not shown in Fig. 1) in the
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asymmetric thyristor 15 kV thyristor Emitter Turn-Off thyristor asymmetric thyristor datasheet 6" thyristor for HVDC D-81541 D-59581

HP STEP RECOVERY DIODES

Abstract: cibh-diode the end of reverse recovery 3 Measurements of Single Chips Diodes with reduced thickness and , step a 140x190mm2 high voltage module with 24 diodes in parallel and a rated current of 1500A is , -9500 Villach, Austria Abstract A new technology for the vertical architecture of free wheeling diodes (FWDs , . During reverse recovery the buried p-doped areas inject holes in the base region improving the ruggedness and softness of fast diodes. This effect is called Controlled Injection of Backside Holes [1].
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cibh-diode 3.3kv diode fz1500r33he3 A-9500 HIGH VOLTAGE DIODE 3.3kv Biermann D-85579

hp 5082 step recovery

Abstract: HP STEP RECOVERY DIODES High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 (1N4456) Features â'¢ Fast , of diodes feature planar silicon epitaxial construction to provide high conductance, low capacitance, and nanosecond turn-on and turn-off. Turn-on time and voltage overshoot are minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications such as core , . Mechanical Specifications The HP Outline 11 package has a glass hermetic seal with dumet leads. The package
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608C 5082-1006 FSJ 1002 5082-1002

single phase inverter design with irf830 for low

Abstract: mosfet rating for 3 phase 1 hp motor solution. External fast recovery freewheeling diodes are assumed around the IGBTs (HEXFETs already have a , ranging from one-quarter horsepower to 5 hp. The first section compares the characteristics and the , MOSFETs have been the choice of power electronic designers, especially at power levels below 5 hp because , have an internal reverse diode, designers can choose an external fast recovery diode to suit a specific , parasitic diode 5. 4-layer device 3-layer device absense of an inherent diode, whose recovery losses add
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single phase inverter design with irf830 for low mosfet rating for 3 phase 1 hp motor inverter irf840 irf840 pwm ac motor any circuit using irf830 IGBT inverter 12v 220v AIM-980 IRFWH450 AN-964
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