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HN1D03FU,LF Toshiba America Electronic Components DIODE ARRAY GP 80V 80MA US6 visit Digikey Buy
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HN1D03F Datasheet

Part Manufacturer Description PDF Type
HN1D03F Toshiba Application Specific Diode Array Original
HN1D03F Toshiba Silicon Epitaxial Planar Type Original
HN1D03FTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6 Original
HN1D03FU Toshiba Silicon epitaxial planar type diode for ultra high speed switching application Original
HN1D03FU Toshiba DIODE Scan
HN1D03FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 Original
HN1D03FU(TE85L,F) Toshiba HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R Original

HN1D03F

Catalog Datasheet MFG & Type PDF Document Tags

HN1D03F

Abstract: HN1D03F HN1D03F : mm 2 Unit 1 Q1Q2: VF (3) = 0.90V () Q1Q2: trr = 1.6ns () Q1Q2: CT = 0.9pF () Unit 2 Q3Q4 : VF (3) = 0.92V () Q3Q4 : trr = 1.6ns () Q3Q4 : CT = 2.2pF () Unit1Unit2 (Ta = 25) VRM 85 V , % (TOP VIEW) 1 2007-11-01 HN1D03F Unit1 (Q1, Q2 , Ta = 25) VF (1 , ( 1) V A 1. ( trr ) 2 2007-11-01 HN1D03F 3 2007-11-01 HN1D03F ·
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Original

HN1D03F

Abstract: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2 , 75% of the single diode one. Marking Pin Assignment (Top View) 1 2001-06-07 HN1D03F , Characteristic Forward voltage Reverse current Test Condition 2 V µA 2001-06-07 HN1D03F 3 2001-06-07 HN1D03F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
SC-74
Abstract: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in 2.8 - 0 . 3 ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 + 0.2 - . Built in Anode Common and Cathode Common. Unit 1 . Low Forward Voltage . Fast Reverse Recovery Time . Small Total Capacitance Unit 2 . Low Forward Voltage . Fast Reverse , P U L S E GENERATOR (HOUT = 5on) 1269 HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1.Q2 , VERSE CURRENT o o o o I R (/¿A) ^ HN1D03F HN1D03F Unit 2 Unit 2 FORWARD CURRENT Ip -
OCR Scan
Abstract: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total , Reliability Handbook. 2000-09-14 1/3 HN1D03F Fig.1 Reverse Recovery Time (trr) Test Circuit , The information contained herein is subject to change without notice. 2000-09-14 2/3 HN1D03F Toshiba
Original
961001EAA2
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm 2 .8 1.6 - · Built in Anode Common and Cathode Common. + 0.2 0.3 + 0.2 Unit 1 · · · Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Q , 1/3 TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 CO M M ON) (Ta = 25 , ith o u t notice. # 1997 08-18 - 2/3 TOSHIBA HN1D03F Unit 1 If - Vf Unit 2 -
OCR Scan
Abstract: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , commercial production 1992-05 1 2014-03-01 HN1D03F Fig.1 Reverse Recovery Time (trr) Test , Reverse current Test Condition 2 V μA 2014-03-01 HN1D03F 3 2014-03-01 HN1D03F Toshiba
Original
Abstract: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage z Small total capacitance Unit 2 z Low forward voltage z Small total capacitance Unit: mm Q1, Q2: VF (3) = 0.90V (typ , . Marking Pin Assignment (Top View) 1 2007-11-01 HN1D03F Fig.1 Reverse Recovery Time (trr , pF ns V Unit 2 2007-11-01 HN1D03F 3 2007-11-01 HN1D03F RESTRICTIONS ON PRODUCT Toshiba
Original

HN1D03F

Abstract: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , . Marking Pin Assignment (Top View) 1 2001-06-07 HN1D03F Fig.1 Reverse Recovery Time (trr , Condition 2 V µA 2001-06-07 HN1D03F 3 2001-06-07 HN1D03F RESTRICTIONS ON
Toshiba
Original
Abstract: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. â'¢ Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 â'¢ Low Forward Voltage Fast Reverse Recovery Time Q l, Q2 : tr r = , TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 CO M M ON) (Ta = 25°C) CHARACTERISTIC , to change w ith o u t notice. 1997 08-18 - 2/3 TOSHIBA HN1D03F Unit 1 If - Vf -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE HN1D03F m m H N1 n n 3F m 'm m mmr w SILICON EPITAXIAL PLANAR TYPE mm ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 Built in Anode Common and Cathode Common. Unit 1 · Low Forward Voltage · Fast Reverse Recovery Time · Small Total , Reliability Handbook. 1997 08-18 1/3 - TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 , 2/3 - TOSHIBA HN1D03F Unit 1 If - Vf Unit 2 If - Vf Unit 1 Ir - V r -
OCR Scan

HN1D03F

Abstract: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 3 F ULTRA HIGH SPEED SWITCHING APPLICATION. â'¢ Built in Anode Common and Cathode Common. Unit in mm Unit 1 â'¢ Low Forward Voltage â'¢ Fast Reverse Recovery Time â'¢ Small Total Capacitance Unit 2 â'¢ Low Forward Voltage â , Reliability Handbook. 1997-08-18 1/3 TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 COMMON) (Ta , contained herein is subject to change without notice. 1997-08-18 2/3 TOSHIBA HN1D03F Unit 1 IF - vf
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OCR Scan

4558 dd

Abstract: 5W393 F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300
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OCR Scan
5W393 TA75393 LM393 LM358 TA75558 4558 dd 4558 equivalent TA75S393 HN2D02FU TA75S393F TA75S01F TA75S558F TC75S51F TA75W393FU

1S1585

Abstract: 1SS239 1SS336 1SS337 1SS344 1SS348 1SS349 1SS374 1SS377 1SS379 HN1D01F HN1D02F HN1D03F HN2D01F High-speed
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OCR Scan
1S1585 1SS239 1SV99 1SS241 1SV103 1SV147 1S1585 equivalent 1ss193 equivalent 1SS SOT mark 107YP 1SS187 1SS190 1SS193 1SS196

high frequency diode

Abstract: 15536-1 -Lead Sm all Product (2125 Type) HN2D01FU 1SS308 HN1D01F I HN 1D02F HN1D03F 1SS308 w ST hi HN1D01FU HN1D02FU HN1D03FU 1SS309 Ell m f f i HN 1D01F HN 1D02F HN 1D03F 3 m 21 O Sm all Product (2125 Type) HN1D01FU HN 1D02FU HN1D03FU 1. Using Device Selection Flowchart 1.5
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OCR Scan
2SC4116 high frequency diode 15536-1 1SS1 A1873 flowchart RN1421 RN2421 2SC2873 2SA1213 2SC3074 2SC3072

2N3904 331 transistor

Abstract: C549 transistor . 1SV242 1SV245 1SV252 HN1D01F HN1D01FU HN1D02F HN1D02FU HN1D03F HN1D03FU HN2D01F HN2D01FU HN1V01H HN1V02H
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OCR Scan
02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

02CZ6

Abstract: 02CZ2 Lead Ultra Super M in i Type (US6) Type No. HN2D01FU HN1D01FU HN1D02FU HN1D03FU Vr (V) 80 80 80 , ) Type No. HN2D01P HN1D01F HN1D02F HN1D03F Vr (V) 80 80 80 80 Ifm (mA) 240 300 300 300 Io (mA
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OCR Scan
SS322 diode MARKING CODE A9 46/SMC 5/L4F1 DIODE s32 schottky diode SS181 SS184 SS187 SS190 1SS307

DF2S6.8UFS

Abstract: SCJ0004N 1SS190 HN1D03FU + 1SS336 1SS337 1SS250 1SS306 1SS311 , . (HN2D01F) 80 100 1.6 (80) Typ. HN1D03F 80 100 80 200 80
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

CRG09

Abstract: CRH02 (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU HN1D03F +
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU HN1D03F + (1SS306) 1SS399 HN2D03F 11 2011/1 SCJ0004R
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CMG06 CMG08 CMG03 AEC-Q101 CMC02 CMF03

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS272 HN1D03FU HN1D03F 1.6 typ. 1SS336 1SS337 6.0 typ. 1SS403 1SS370 1SS250 , .6FK 493 10 [ 1 ] DF8A6.2FK 495 HN1D03FU 520 , 511 HN2D03F 538 HN4D02JU 558 HN1D02FU 514 HN2S01F 541 HN1D03F 517 , A3 1SS184 ×2 ×2 HN1D03FU 200 80 * 300 * 100 0.5 80 1.2 100 , 80 1.2 100 3.0 0 4 A3 1SS184 ×2 ×2 HN1D03F 300 80 * 300
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C
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