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Part : HGTP10N50E1 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 15,349 Best Price : $2.15 Price Each : $2.64
Part : HGTP10N50E1D Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 3,800 Best Price : $3.21 Price Each : $3.95
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HGTP10N50C1D Datasheet

Part Manufacturer Description PDF Type
HGTP10N50C1D Harris Semiconductor 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original
HGTP10N50C1D Intersil 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original
HGTP10N50C1D Intersil Obsolete Product Datasheet Scan

HGTP10N50C1D

Catalog Datasheet MFG & Type PDF Document Tags

10n50c1d

Abstract: 10N50E1D HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V , , HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs , HGTP10N40C1D TO-220AB 10N40C1D HGTP10N40E1D TO-220AB 10N40E1D HGTP10N50C1D TO , HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 File Number UNITS V V V A W W/oC oC 2405.5 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Harris Semiconductor
Original
10N50E1D 10n50c1d 10n40c 10n50c 50C1D 10N50C1 10N50C1D 25BVCES AN7254 AN7260

diode lt 823

Abstract: 948 LG DIODE r j n HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D , . 400 400 ±20 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 UNITS V V V A W W/°C °C 17.5 10 75 , , HGTP10N50C1D, HGTP10N50E1D E le c trica l S p e c ific a tio n s Tc = +25°C, Unless Otherwise Specified LIMITS , Voltage Collector Current HGTP10N50C1D, HGTP10N50E1D MIN 500 2.0 SYM BO L B V ces VGE(TH) icES , , HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves z o E1 0 0 5 Q . 8 0 \ \ +50 \ +75
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OCR Scan
diode lt 823 948 LG DIODE gep 45 diode Diode LT 443 100A-4V TD-220AB TP10N

10N40E

Abstract: 10n40e1d HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel , , HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors , , HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS LIMITS HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D , Manufacturer HARRIS SEMICON]) SECTOR bflE D m 43D2E71 OOSOSLb bS3 HGTP10N40C1D, HG TP 10N40E1D, HGTP10N50C1D
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OCR Scan
10N40E diode OA-75 ls25 diode M3D2271 00502L TQ-220AB 40C1/50C1 C105Q2 AN72S0
Abstract: M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V , C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel , to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 UNITS V V , , HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified LIMITS HGTP10N40C1D, HGTP10N40E1D PARAMETERS SYMBOL TEST CONDITIONS HGTP10N50C1D, HGTP10N50E1D MIN -
OCR Scan
005Q2 40E1/50 40E1/50E1 AN72S4

10n50c1d

Abstract: 10N50E1D , HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package , N-CHANNEL ENHANCEMENT MODE Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D , grated circuits. PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D , HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.5 10 75 0.6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 , , HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified
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OCR Scan
10N50E1 ultrafast diode 10a 300v 10N40C1 50E1D 400v 5A 1Y T0-220AB

10n50c1d

Abstract: 10N50E1D HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with , Protective Circuits C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are , HGTP10N40E1D TO-220AB 10N40E1D HGTP10N50C1D TO-220AB 10N50C1D HGTP10N50E1D TO , . http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-20 HGTP10N50C1D , 2405.5 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical
Intersil
Original
10n40 diode 10a 400v 10n5 igbt 300V 10A datasheet REG IC 10A TC 9310 IC ISO9000

HGTH20N40E1D

Abstract: TO218AC HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D HGTP10N50F1D HGTP10N50E1D HGTP10N50C1D HGTH12N50E1D
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OCR Scan
TO218AC IGBT Guide HGTG20N50 TO-220AB 5-lead HGTP6N40E1D HGTP10N40F1D HGTH12N40E1D HGTH12N50C1D HGTH20N50E1D HGTH20N50C1D

igbt 400V 20A

Abstract: igbt 500V 15A , HGTP10N50C1D, E1D HGTP10N40F1 D, HGTP10N50F1D HGTH12N40C1D, E1 D, HGTH12N50C1D, E1D HGTG12N60D1D HGTG20N50C1D
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OCR Scan
igbt 400V 20A igbt 500V 15A diode 500v 10A igbt 1000v 10A 20A 500v igbt igbt 1200V 20A HGTD6N40E1 HGTD6N50E1 HGTD10N40F1 HGTD10N50F1 HGTH12N40C1 HGTM12N40C1

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A - MCT/IGBT/DIODES 3 PAGE 3-3 3-7 INSULATED GATE BIPOLAR TRANSISTORS SELECTION G U ID E . INSULATED GATE BIPOLAR TRANSISTOR DATA SHEETS HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D HGTP10N40F1 D, HGTP10N50F1D HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1
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OCR Scan
TRANSISTOR BIPOLAR 400V 20A P-Channel IGBT igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A HGTD10N50F1S HGTP12N60D1 HGTB12N60D1C HGTP14N40F3VL HGTP14N36G3VL HGT1S14N36G3VL

equivalent data book of 10N60 mosfet

Abstract: MC14016CP HGTP10N40C1D HGTP10N40E1D HGTP10N40F1D HGTP10N50C1D HGTP10N50E1D HGTP10N50F1D HGTP6N40E1D HGTP6N50E1D
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OCR Scan
equivalent data book of 10N60 mosfet MC14016CP GD4511 CX 2859 SMD an-6466 74AC14 spice 1-800-4HARRIS FAX24-H 1-800-4-HARRIS