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Part : HGTP10N50E1 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 15,349 Best Price : $2.15 Price Each : $2.64
Part : HGTP10N50E1D Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 3,800 Best Price : $3.21 Price Each : $3.95
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HGTP10N50C1D Datasheet

Part Manufacturer Description PDF Type
HGTP10N50C1D Harris Semiconductor 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original
HGTP10N50C1D Intersil 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original
HGTP10N50C1D Intersil Obsolete Product Datasheet Scan

HGTP10N50C1D

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V , , HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs , HGTP10N40C1D TO-220AB 10N40C1D HGTP10N40E1D TO-220AB 10N40E1D HGTP10N50C1D TO , HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 File Number UNITS V V V A W W/oC oC 2405.5 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Harris Semiconductor
Original
10N50E1D 10n50c1d 10n40c 50C1D 10N50C1 10n50c 10N50C1D 25BVCES AN7254 AN7260
Abstract: r j n HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D , . 400 400 ±20 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 UNITS V V V A W W/°C °C 17.5 10 75 , , HGTP10N50C1D, HGTP10N50E1D E le c trica l S p e c ific a tio n s Tc = +25°C, Unless Otherwise Specified LIMITS , Voltage Collector Current HGTP10N50C1D, HGTP10N50E1D MIN 500 2.0 SYM BO L B V ces VGE(TH) icES , , HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves z o E1 0 0 5 Q . 8 0 \ \ +50 \ +75 -
OCR Scan
diode lt 823 100A-4V 948 LG DIODE Diode LT 443 gep 45 diode TD-220AB TP10N
Abstract: HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel , , HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors , , HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS LIMITS HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D , Manufacturer HARRIS SEMICON]) SECTOR bflE D m 43D2E71 OOSOSLb bS3 HGTP10N40C1D, HG TP 10N40E1D, HGTP10N50C1D -
OCR Scan
10N40E diode OA-75 ls25 diode M3D2271 00502L TQ-220AB 40C1/50C1 C105Q2 AN72S0
Abstract: M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V , C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel , to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 UNITS V V , , HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified LIMITS HGTP10N40C1D, HGTP10N40E1D PARAMETERS SYMBOL TEST CONDITIONS HGTP10N50C1D, HGTP10N50E1D MIN -
OCR Scan
005Q2 40E1/50 40E1/50E1 AN72S4
Abstract: , HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package , N-CHANNEL ENHANCEMENT MODE Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D , grated circuits. PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D , HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.5 10 75 0.6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 , , HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications Tc = +25°C, Unless Otherwise Specified -
OCR Scan
10N40C1 10N50E1 400v 5A 1Y 50E1D ultrafast diode 10a 300v T0-220AB
Abstract: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with , Protective Circuits C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are , HGTP10N40E1D TO-220AB 10N40E1D HGTP10N50C1D TO-220AB 10N50C1D HGTP10N50E1D TO , . http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-20 HGTP10N50C1D , 2405.5 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Intersil
Original
diode 10a 400v 10n40 REG IC 10A igbt 300V 10A datasheet 10n5 TC 9310 IC ISO9000
Abstract: HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D HGTP10N50F1D HGTP10N50E1D HGTP10N50C1D HGTH12N50E1D -
OCR Scan
TO218AC HGTG20N50 IGBT Guide TO-220AB 5-lead HGTP6N40E1D HGTP10N40F1D HGTH12N40E1D HGTH12N50C1D HGTH20N50E1D HGTH20N50C1D
Abstract: , HGTP10N50C1D, E1D HGTP10N40F1 D, HGTP10N50F1D HGTH12N40C1D, E1 D, HGTH12N50C1D, E1D HGTG12N60D1D HGTG20N50C1D -
OCR Scan
igbt 400V 20A igbt 500V 15A diode 500v 10A 20A 500v igbt igbt 1000v 10A igbt 1200V 20A HGTD6N40E1 HGTD6N50E1 HGTD10N40F1 HGTD10N50F1 HGTH12N40C1 HGTM12N40C1
Abstract: - MCT/IGBT/DIODES 3 PAGE 3-3 3-7 INSULATED GATE BIPOLAR TRANSISTORS SELECTION G U ID E . INSULATED GATE BIPOLAR TRANSISTOR DATA SHEETS HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D HGTP10N40F1 D, HGTP10N50F1D HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1 -
OCR Scan
TRANSISTOR BIPOLAR 400V 20A P-Channel IGBT igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT IGBT 40A HGTD10N50F1S HGTP12N60D1 HGTB12N60D1C HGTP14N40F3VL HGTP14N36G3VL HGT1S14N36G3VL
Abstract: HGTP10N40C1D HGTP10N40E1D HGTP10N40F1D HGTP10N50C1D HGTP10N50E1D HGTP10N50F1D HGTP6N40E1D HGTP6N50E1D -
OCR Scan
equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 74AC14 spice CX 2859 SMD 1-800-4HARRIS FAX24-H 1-800-4-HARRIS