| Abstract: : 1/5 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings · , >100 - HE8051S HSMC Product Specification HI-SINCERITY Spec. No. : HE6111 HE6111 Issued Date , Collector Current (mA) HE8051S 1000 1 10 100 Forward Voltage-VCE (V) HSMC Product , 100 0 0 50 100 150 200 o Ambient Temperature-Ta ( C) HE8051S HSMC Product ... |
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HE8051S HE6111 HE6111 abstract |
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| Abstract: : 1/4 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings TO-92 · , hFE2 HE8051S C 100-180 - C1 100-180 >100 D 160-300 - D1 160-300 >100 E , ) HE8051S 1000 1 10 100 Forward Voltage-VCE (V) HSMC Product Specification , 100 150 200 o Ambient Temperature-Ta ( C) HE8051S HSMC Product Specification ... |
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| Abstract: HI-SINCERITY Spec. No. : HE6119 HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 MICROELECTRONICS CORP. HE8551S HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S HE8551S is designed for general purpose amplifier applications. Features · High DC Current gain: 100-400 at IC=150mA · Complementary to HE8051S Absolute Maximum Ratings · Maximum Temperatures Storage Temperature ... |
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HE8551S HE8051S HE6119 HE6119 abstract |
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| Abstract: HI-SINCERITY Spec. No. : HE6119 HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S HE8551S is designed for general purpose amplifier applications. Features · High DC Current gain: 100-400 at IC=150mA · Complementary to HE8051S Absolute Maximum Ratings · Maximum Temperatures Storage Temperature ... |
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HE8551S HE8051S HE6119 HE6119 abstract |
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