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H11AV2X Isocom Components Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6 visit Digikey Buy

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Part : H11AV2XSM Supplier : Isocom Components Manufacturer : Newark element14 Stock : 406 Best Price : $0.2270 Price Each : $0.4590
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H11AV2 Datasheet

Part Manufacturer Description PDF Type
H11AV2 Fairchild Semiconductor Optoisolator Transistor Output Original
H11AV2 Isocom Components 6V, 60mA optically coupled isolator phototransistor output Original
H11AV2 Motorola 6-pin DIP Optoisolator Transistor Output Original
H11AV2 Opto 6 Pin, DIP, Phototransistor Detector w/ Base, CTR 50 min @ 10mA, 10V Optocoupler Original
H11AV2 General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-transistor. Scan
H11AV2 Isocom Components Optoelectronics Data Book 1996 Scan
H11AV2 Motorola Switchmode Datasheet Scan
H11AV2 Motorola Optoelectronics Device Data 1988 Scan
H11AV2 TRW Dual In-Line Package Isolators Scan
H11AV2A Fairchild Semiconductor Optoisolator Transistor Output Original
H11AV2A General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-transistor. Scan
H11AV2A Motorola Switchmode Datasheet Scan
H11AV2A Motorola Optoelectronics Device Data 1988 Scan
H11AV2AM Fairchild Semiconductor 6-Pin DIP High BVceo 0.4 Leadform Phototransistor Output Optocoupler Original
H11AV2A-M Fairchild Semiconductor PHOTOTRANSISTOR OPTOCOUPLERS Original
H11AV2A-M Fairchild Semiconductor 6-PIN DIP Optoisolator Transistor Output Original
H11AV2AM_NL Fairchild Semiconductor 6-Pin DIP High BVceo 0.4" Leadform Phototransistor Output Optocoupler Original
H11AV2AV Fairchild Semiconductor Optoisolator Transistor Output Original
H11AV2AVM Fairchild Semiconductor 6-Pin DIP High BVceo 0.4 Leadform Phototransistor Output Optocoupler Original
H11AV2AVM_NL Fairchild Semiconductor 6-Pin DIP High BVceo 0.4" Leadform Phototransistor Output Optocoupler Original
Showing first 20 results.

H11AV2

Catalog Datasheet MFG & Type PDF Document Tags

H11AV1A

Abstract: H11AV2A Production H11AV2FV-M H11AV2SR2-M H11AV2V-M H11AV2-M H11AV2S-M H11AV2F-M H11AV2FR2-M Full Production Full , H11AV2A-M - 6-Pin High BVceo 0.4" Leadform Phototransistor 6-PIN, DIP Product H11AV2A-M H11AV2AV-M , H11AV2, H11AV2A Collector­Emitter Saturation Voltage (IC = 2 mA, IF = 20 mA) Turn­On Time (IC = 2 mA, VCC , H11AV2A-M - 6-Pin High BVceo 0.4" Leadform Phototransistor 6-PIN, DIP Fairchild Semiconductor SEARCH , H11AV2A-M Products groups 6-Pin High BVceo 0.4" Leadform Analog and Mixed Phototransistor 6-PIN, DIP Signal
Fairchild Semiconductor
Original
H11AV1 H11AV1A H11AV2FR2V-M H11AV2SR2V-M H11AV2SV-M P01101866 CR/0117

1AV3A

Abstract: H11AV1A , H11AV2A and HI 1AV3A are lead-formed versions of the H11AV1, H11AV2 and H11AV3. These devices are also , |3fi750fll 001^707 1 J H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A_Optoelectronic Specifications T'M , TEMPERATURE 232 E SOLI» STATE 01 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A- DE|3fl750ûl GOnTOT S , '" A- â r"l A A 3 1* 1 {top viewi s 4 e 1 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State
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0730-2P 1AV3A 1av3 VDE0750TI VDE0804 ic 5304 1a H11AV

H11AV2A

Abstract: h11av2 Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator , ard 0730-2P. T h e H11AV1A, H11AV2A a n d HI1AV3A are lead-form ed versions o f th e H11AV1, H11AV2 a , Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A individual electrical characteristics (25° C , , H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A M OUNTING THE H11AV CURRENT INDUSTRIAL STANDARD VDE 0883 , MEASUREMENTS APE MADE FROM THE SEATING PLANE 4 FOUR PLACES H11AV1, H11AV2, H11AV3 SEATING PLANE P H O
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H11AV1A harris H11AV3T

H11AV2A

Abstract: H11AV3A H11AV2, H11AV2A H11AV3, H11AV3A Collector-Emitter Saturation Voltage (l£ - 2 mA, Ip - 20 mA) Turn-On Time , ? H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A - 6 0 - 4 0 V c e . C O L LE C T O R E M IT T E R V , »M0T7 H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A Im A ) if ; - 0 lB = 8 / iA 7pA , s is to r O u tp u t The H11AV1,A, H11AV2,A and H11AV3.A devices consist of a gallium arsenide , SC ( DIODES/OPTO ) L4E D L.3L.725S OOflbbMM 4S^ h o t ? H11AV1, H11AV1A, H11AV2
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diode b3l 730D-05

H11AV1A

Abstract: H11AV2A ? H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoelectronic Specifications individual , 0Cm70ö 3 | Optoelectronic Specifications- H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A , T V S T E M P E R A T U R E G E SOLID STATE H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Dl , and H 11AV3A are lead-formed versions of the HI 1AVI, H11AV2 and H11AV3. These devices are also available in Surface-Mount packaging. FEA TU R ES Photon Coupled Isolator H11AV1, H11AV2, H11AV3
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11AV2A

H11AV1A

Abstract: H11AV1 10 V) H11AV1, H11AV1A H11AV2, H11AV2A Collector­Emitter Saturation Voltage (IC = 2 mA, IF = 20 mA , H11AV1,A H11AV2,A GlobalOptoisolatorTM 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to , . 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE H11AV1,A H11AV2,A ELECTRICAL , ) H11AV1,A H11AV2,A 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 ­60 ­40 100
Fairchild Semiconductor
Original
h11av2 equivalent

H11AV2

Abstract: h11av2 equivalent Global Supplier of Optoelectronic Solutions H11AV2 ALL Product Lead Free, RoHs Compliant , : sales@optoinc.com Global Supplier of Optoelectronic Solutions H11AV2 ALL Product Lead Free, RoHs Compliant , : 972-886-0078 Email: sales@optoinc.com Global Supplier of Optoelectronic Solutions H11AV2 ALL Product , Optoelectronic Solutions ALL Product Lead Free, RoHs Compliant H11AV2 UL # E244343 G ©COPYRIGHT 2004 , Supplier of Optoelectronic Solutions ALL Product Lead Free, RoHs Compliant H11AV2 UL # E244343
Opto
Original
OPTO611 5300V 7500V

H11AV1A

Abstract: H11AV2 /N H11AV2-M - 6-Pin High BVceo Phototransistor 6-PIN, DIP H11AV2FR2V-M H11AV2V-M H11AV2SR2-M H11AV2FV-M H11AV2-M H11AV2FR2-M H11AV2F-M H11AV2S-M H11AV2SR2V-M H11AV2SV-M Full Production Full , -PIN, DIP H11AV2AV-M H11AV2A-M * 1,000 piece Budgetary Pricing Full Production Full Production , H11AV2, H11AV2A Collector­Emitter Saturation Voltage (IC = 2 mA, IF = 20 mA) Turn­On Time (IC = 2 mA, VCC , . www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation Product Folder - Fairchild P/N H11AV2A-M - 6
Fairchild Semiconductor
Original
E90700

H11AV1

Abstract: H11AV2 Collector Current (IF = 10 mA, VCE = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A IC (CTR)(2 , MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA H11AV1,A* H11AV2,A , % Min] *Motorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide , Data 1 H11AV1,A H11AV2,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1 , ) H11AV1,A H11AV2,A 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 ­60 ­40 100
Motorola
Original
8UA18 730A-04 H11AV1 Application

H11AV2A

Abstract: H11AV3A . n.c. 4. emitter 5. collector 6. base 6-33 H11 AVI, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A , Collector Current Of = 10 mA, Vce = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A H11AV3, H11AV3A ic 10 5 2 15 10 7 , Current Figure 2. Output Current versus Input Current 6-34 H11 AVI, H11AV1A, H11AV2, H11AV2A, H11AV3 , Switching Times 6-35 H11 AVI, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A 'f â â  0 IB = r
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VDE0160 VDE0832 VDE0833 AN978 E54915 IEC380/VDE0806 IEC435/VDE0805 IEC65/VDE0860 VDE0110 IEC204/VDE0113

H11AV2A

Abstract: H11AV3A s 4. 5 a n d 6 are c o m m o n . H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A ELECTRICAL , versus Input Current 6-34 H11AV1, H11A V I A, H11AV2, H11AV2A, H11AV3, H11AV3A g & 0.7 05 , es Figure 8. Turn-Off Sw itch in g Tim es 6-35 H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3 , pF COUPLED Output Collector Current (Ip = 10 m A, V q £ = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A H11AV3, H11AV3A c 10 5 2 15 10 7 0.15 5 4 0.2 mA 30 Collector-Emitter Saturation
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aiou ge h11a transistor BC 176 730D-02

1AV3A

Abstract: Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs ,   Optolsolator specifications ÚTY H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A , H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A TYPICAL CHARACTERISTICS 2. INPUT , _Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A MOUNTING THE H11AV CURRENT , machine applications per VDE standard 0730-2P. T he H11AV1A, H11AV2A and H I 1AV3A are lead-formed
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0QD417R

H11AV2A

Abstract: H11AV1A harris , H11AV2A, H11AV3A 1 G E SOLID STATE 01E H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A , 3875081 G E SOLID STATE 01E H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A HARRI S , optoelectronic speculations- T -H Ã-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r , H11AV1, H11AV2, H11AV3 â'¢Derate 1.33 mW/°C above 25°C ambient. P H O T O -T R A N S IS T O R P
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43G2271 92CS-42662 92CS-429S1

H11AV3A

Abstract: H11AV1A 4-30 H11AV1, H11AVI A, H11AV2, H11AV2A, H11AV3, H11AV3A ELECT RIC A L C H A R A C T E R IS T IC S , H11AV2, H11AV2A H11AV3, H11AV3A Collector-Emitter Saturation Voltage (lc = 2 mA, Ip = 20 mA) Turn-On Time , Figure 2. Output Current versus Input Current 4-31 H11AVI, H11AV1A, H11AV2, H11AV2A, H11AV3 , 4-32 H11AV1, H11AVI A, H11AV2, H11AV2A, H11AV3, H11AV3A - 0 r r f r f O 2 4 6 8 10 12 14 16 , * H11AV2,A H11AV3,A [CTR = 1 0 0 % Min) [C TR * 5 0 % Min] [CTR = 2 0 % Min] `Motorola Preferred Devices
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OCR Scan

H11AV2A

Abstract: H11AV1A utput Collector C urrent (Ip - 10 mA, V c e - 1 0 V) H11AV1, H11AV1A H11AV2, H11AV2A C o lle ctor-E m , V I,A H11AV2.A NOI MALIZED TO Ta - 2 5 'c : -60 -40 -20 0 20 40 60 80 , Is a test option. H11AV1.A* H11AV2,A [CTR X100% Min) [CTR » 60% Min] ' Motorola Preferred Devices , Times Motorola Optoelectronics Device Data 5-35 H11AV1.A H11AV2,A if >0 IB - 8 |iA 7
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AV2A

eh11a

Abstract: 1AV Series Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator , . T h e H11AV1A, H11AV2A a n d H11AV3A are lead-form ed versions o f th e H11AV1, H11AV2 a n d H11AV3 , # Optolsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A individual , , H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A TYPICAL CHARACTERISTICS 2. INPUT CHARACTERISTICS 3. DARK , 232 Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A MOUNTING THE
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eh11a 1AV Series 11AV2

E91231

Abstract: H11AV H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead forms : l - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01.22 Semko - , Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20 Collector-emitter Saturation
ISOCOM Components
Original
DB92055-AAS/A1

SMD 6 PIN IC

Abstract: h11av2 equivalent H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01.22 Semko - , Current (ICEO) 50 Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20
ISOCOM Components
Original
SMD 6 PIN IC DB92055

smd transistor 662

Abstract: h11av2 equivalent H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form 2.54 1 2 6 5 3 7.0 6.0 4 1.2 - SMD approved to CECC 00802 Certified to EN60950 by Nemko - Certificate No , ) Collector-emitter Dark Current (ICEO) 50 Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20
ISOCOM Components
Original
smd transistor 662 P01102464

transistor c1684

Abstract: h11av2 equivalent QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A , diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A, H11AV2A and , H11AV2 H11AV3 Saturation voltage VcEISAT) SYMBOL CTR U n le s s Oth e rw is e Spit - J te d ) MIN. 100 , % H11AVI A H11AV2A s R be > . r TV i I io% V ! kn I -Z I / I C1296A Fig. 9. Switching Time Test Circuit and Waveform H11AV1 H11AV2 H11AV3 1-92
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transistor c1684 OPTOCOUPLER 636 CL685 113t 380/VDE C1285 C1679 C1680 C1681 C1683

ISTS201

Abstract: IS1020 Number H11AV1 H11AV2 H11AV3 H24A1 H24A2 IS1100 IS1050 IS1020 IS1100G IS1050G IS1020G Features Current , H11AA1 H11AV1 H11AV2 H11AV3 H11B1 H11C4 H11C5 H11C6 H1101 H11D2 H11D3 o t/l Page Part H1104
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M003040 ISTS823A ISTS201 ISTS2001 MOC 4N35 ists824 H21A IQ4000 MOC3030 MOC3031 MOC3032 MOC3041 MOC3042

H11AV1

Abstract: olt V ( B R ) C E O M inim um H11AV1,A* H11AV2,A [C TR = 100% Min] [C TR = 50% Min] 'M o to ro la , e = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A C o lle cto r-E m itte r Saturation Voltage (I q = 2 mA
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Showing first 20 results.